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1. 发明授权

US5443662A Method of forming a nitride or carbonitride layer 失效
标题翻译：形成氮化物或碳氮化物层的方法
公开(公告)号：US5443662A
公开(公告)日：1995-08-22
申请号：US84322
申请日：1993-06-30
申请人： Tohru Arai , Kazuyuki Nakanishi , Hiromasa Takeda , Hideo Tachikawa
发明人： Tohru Arai , Kazuyuki Nakanishi , Hiromasa Takeda , Hideo Tachikawa
IPC分类号： C23C8/06 , C23C8/24 , C23C8/30 , C23C16/442 , C23C16/44 , B05D1/22
CPC分类号： C23C16/442
摘要： A nitride or carbonitride layer is formed on the surface of a metal material as follows: A treating agent composed of a refractory powder of alumina or the like and a powder of a metal for forming a nitride or a carbide or an alloy thereof is disposed in a fluidized bed furnace; the treating agent is fluidized to form a fluidized bed by introducing an inert gas; the fluidized bed furnace is heated to a temperature of not higher than 700.degree. C.; an activator of a halogenated ammonium salt is intermittently supplied into the fluidized bed at a rate of 0.001 to 5 wt %/hour based on the total amount of the treating agent; and the metal material to be treated is disposed in the fluidized bed during or after any of the above steps. For example, a nitride layer composed of only a metal for forming a nitride which contains almost no Fe--N is formed on the surface of iron steel even at a temperature as low as not higher than 700.degree. C. The layer is very hard and efficient in wear resistance, and the toughness of the base metal is hardly lowered.
摘要翻译：在金属材料的表面上如下形成氮化物或碳氮化物层：由氧化铝等的耐火材料粉末和用于形成氮化物的金属粉末或其合金构成的处理剂设置在流化床炉; 通过引入惰性气体使处理剂流化形成流化床; 将流化床炉加热至不高于700℃的温度; 基于处理剂的总量，以0.001至5重量％/小时的速率将卤化铵盐的活化剂间歇地供给到流化床中; 并且在任何上述步骤期间或之后将要处理的金属材料设置在流化床中。例如，即使在700℃以下的温度下，也在铁钢的表面上形成仅由形成几乎不含Fe-N的氮化物的金属构成的氮化物层。该层非常硬，耐磨损性高，贱金属的韧性几乎不降低。

2. 发明授权

US5620521A Method for surface treatment 失效
标题翻译：表面处理方法
公开(公告)号：US5620521A
公开(公告)日：1997-04-15
申请号：US386230
申请日：1995-02-10
申请人： Hideo Tachikawa , Hiromasa Takeda , Kazuyuki Nakanishi
发明人： Hideo Tachikawa , Hiromasa Takeda , Kazuyuki Nakanishi
IPC分类号： C23C10/34 , B01J8/32 , C23C16/442 , F27B15/00 , C23C16/00
CPC分类号： F27B15/00 , B01J8/32 , C23C16/442 , B22F2998/00 , Y10S118/05
摘要： A method for surface treatment in which a fluidizable powder mixture consisting of a powder of a refractory material, and a surface layer-forming powder of a metal, or alloy or both is fluidized by a fluidizing gas supplied through a gas distributor to form above the gas distributor a fluidized bed in which a surface layer is formed on the material to be treated under heating in the presence of a halide. A layer of coarse particles is disposed between the fluidized bed and the gas distributor, and the coarse particles have a mean diameter, D(m), as defined below:(1650V.mu./PG).sup.1/2
摘要翻译：一种表面处理方法，其中由耐火材料粉末和金属或合金的表面层形成粉末组成的可流化粉末混合物通过气体分配器供应的流化气体流化，形成在气体分配器是在卤化物存在下在加热下在待处理材料上形成表面层的流化床。在流化床和气体分配器之间设置一层粗颗粒，粗颗粒具有如下定义的平均直径D（m）：（1650V / PG）+ E，fra 1/2 + EE < D <6.5d其中V：流化气体的速度（m / s）; mu：流化气体的粘度系数（kg / mxs）; P：粗颗粒的平均密度（kg / m3）; G：重力加速度（9.8 m / s2）; d：表面层形成粉末的平均粒径（μm）。粗颗粒层可以防止流化床粉末的聚集，并保护气体分布器免受高反应性粉末和气体的暴露。

3. 发明授权

US4892759A Method for surface treatment 失效
标题翻译：表面处理方法
公开(公告)号：US4892759A
公开(公告)日：1990-01-09
申请号：US228423
申请日：1988-08-05
申请人： Tohru Arai , Hiromasa Takeda , Hiroyuki Kawaura
发明人： Tohru Arai , Hiromasa Takeda , Hiroyuki Kawaura
IPC分类号： C23C10/28 , C04B35/56 , C04B35/58 , C23C8/06 , C23C12/02 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/442 , C23C16/448 , H01G13/00 , H01G17/00 , H01L21/56
CPC分类号： C23C16/36 , C23C16/32 , C23C16/34 , C23C16/442 , C23C16/4481 , C23C16/4488
摘要： Particles of a layer-forming agent containing at least one element for forming a surface layer of e.g. a carbide on the material to be treated are disposed in a furnace below and/or at the side of the material to be treated. A fluidizing gas is introduced into the furnace below the layer-forming agent for fluidizing a powder of alumina or other refractory material to form a fluidized bed above the layer-forming agent, while the agent is not fluidized. The furnace is heated and a solid halide is supplied into the furnace below the layer-forming agent. The halide is sublimable to produce a gas which activates the element, so that it may combine with a particular element which the material to be treated contains, whereby the surface layer is formed thereon. An apparatus for forming such a surface layer is also provided.
摘要翻译：含有形成表面层的至少一种元素的成层剂的颗粒。将要处理的材料上的碳化物设置在待处理材料的下方和/或侧面的炉中。流化气体被引入成层剂下方的炉中，用于使氧化铝或其它耐火材料的粉末流化，以在成型剂上形成流化床，同时试剂不流化。加热炉，并将固体卤化物供给到成层剂下面的炉中。卤化物可升华以产生激活元件的气体，使得其可与要处理的材料所含的特定元件结合，由此在其上形成表面层。还提供了一种用于形成这种表面层的装置。

4. 发明授权

US4786526A Surface treating method and apparatus 失效
标题翻译：表面处理方法和装置
公开(公告)号：US4786526A
公开(公告)日：1988-11-22
申请号：US66483
申请日：1987-05-29
申请人： Tohru Arai , Junji Endo , Hiromasa Takeda
发明人： Tohru Arai , Junji Endo , Hiromasa Takeda
IPC分类号： C23C8/20 , C23C8/06 , C23C8/24 , C23C10/08 , C23C10/14 , C23C16/32 , C23C16/34 , C23C16/448 , B05D1/22
CPC分类号： C23C16/34 , C23C16/32 , C23C16/4488 , C23C8/06 , Y10S118/05
摘要： A method and apparatus for forming a layer of a carbide or nitride of, for example, titanium or vanadium on the surface of material to be treated in a fluidized bed furnace. A refractory powder for forming a fluidized bed, a vessel or vessels filed with powder of a treating agent, and the material to be treated are placed in the furnace. The treating agent includes powder of at least one carbide or nitride forming metal or alloy and powder of at least one compound selected from the group consisting of chlorides, fluorides, bromides, iodides and boro-fluorides of alkali and alkaline earth metals and/or at least one of an ammonium halide and a metal halide. A fluidizing gas is introduced into the furnace under heat to form a fluidized bed in which the surface of the material to be treated is treated. The vessel or vessels are placed in the furnace in a spaced-apart relation from the material to be treated, so that no powder of the treating agent may adhere to the surface of the material to be treated.
摘要翻译： PCT No.PCT / JP86 / 00360 Sec。 371日期1987年5月29日 102（e）日期1987年5月29日PCT提交1986年7月14日PCT公布。公开号WO87 / 0207300 日期：1987年4月9日。一种用于在流化床炉中在待处理材料的表面上形成例如钛或钒的碳化物或氮化物层的方法和装置。将用于形成流化床的耐火材料粉末，装有处理剂粉末的容器和容器以及被处理材料放入炉中。处理剂包括至少一种碳化物或氮化物形成金属或合金的粉末和至少一种选自碱金属和碱土金属的氯化物，氟化物，溴化物，碘化物和硼氟化物的化合物和/或在卤化铵和金属卤化物中的至少一种。在加热下将流化气体引入炉中以形成待处理材料的表面的流化床。容器或容器以与待处理材料间隔开的关系放置在炉中，使得处理剂的粉末不会粘附到待处理材料的表面。

5. 发明授权

US4871401A Fluidized bed method of forming a nitride or carbonitride layer 失效
标题翻译：形成氮化物或碳氮化物层的流化床方法
公开(公告)号：US4871401A
公开(公告)日：1989-10-03
申请号：US123662
申请日：1987-11-13
申请人： Tohru Arai , Junji Endo , Hiromasa Takeda
发明人： Tohru Arai , Junji Endo , Hiromasa Takeda
IPC分类号： C23C12/02
CPC分类号： C23C12/02
摘要： A method of forming a nitride or carbonitride layer on the surface of an iron or iron alloy article, which comprises the steps of: (a) disposing in a fluidized bed furnace a treating agent comprising a refractory powder, a metal powder of at least one selected from the group consisting of chromium, vanadium, titanium and a metal containing at least one of the chromium, vanadium and titanium, and a halide powder; (b) introducing a nitrogen-containing gas into the fluidizied bed furnace; (c) heating the fluidized bed furnace; and (d) disposing the article in the fluidized bed furnace during or after the steps (a) to (c). In this method, the article is preferably treated at a temperature not higher than 650.degree. C. The step (c) may precede the step (b). The halide powder may be supplied to the fluidized bed furnace from outside in the form of green compact or a gas.
摘要翻译：一种在铁或铁合金制品的表面上形成氮化物或碳氮化物层的方法，包括以下步骤：（a）在流化床炉中设置包括耐火粉末，至少一种选自铬，钒，钛和含有铬，钒和钛中的至少一种的金属和卤化物粉末; （b）将含氮气体引入流化床炉; （c）加热流化床炉; 和（d）在步骤（a）至（c）期间或之后将制品置于流化床炉中。在该方法中，优选在不高于650℃的温度下进行处理。步骤（c）可以在步骤（b）之前。卤化物粉末可以从生坯或气体的形式从外部供应到流化床炉。

6. 发明授权

US4844949A Method of surface treatment and apparatus used therefor 失效
标题翻译：表面处理方法及其使用的设备
公开(公告)号：US4844949A
公开(公告)日：1989-07-04
申请号：US249251
申请日：1988-09-23
申请人： Tohru Arai , Junji Endo , Hiromasa Takeda
发明人： Tohru Arai , Junji Endo , Hiromasa Takeda
IPC分类号： C23C10/36 , C23C10/52 , C23C12/00 , C23C12/02 , C23C16/06 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/442 , C23C16/448 , F27B15/10
CPC分类号： C23C16/32 , C23C16/34 , C23C16/36 , C23C16/442 , C23C16/4488 , Y10S118/05
摘要： A method of forming a surface layer of carbide, nitride, carbonitride, or solid-solution on the surface of a material to be treated, which comprises disposing in a fluidized bed furnace a treating agent comprising a powder of a refractory material, and a powder of a metal for forming a carbide, nitride, carbonitride or solid-solution or a powder of an alloy thereof, introducing a fluidizing gas into the fluidized bed furnace to fluidize the treating agent and form a fluidized layer, disposing the material to be treated in the fluidized layer, and introducing a predetermined amount of halide into the fluidized layer, and an apparatus for forming the surface layer on the material to be treated, comprising a furnace body for forming the surface layer in the fluidized layer of the treating agent, a heating furnace for heating the fluidized layer, a halide supply pipe in communication with the outside of the furnace body, and a halide gas jetting pipe disposed within the furnace body, which is connected to the halide supply pipe and has a plurality of apertures opened into the fluidized layer.
摘要翻译：在待处理材料的表面上形成碳化物，氮化物，碳氮化物或固溶体的表面层的方法，其包括在流化床炉中设置包含耐火材料粉末和粉末的处理剂用于形成碳化物，氮化物，碳氮化物或固溶体的金属或其合金粉末，将流化气体引入流化床炉中以使处理剂流化并形成流化层，将待处理的材料置于流化层，并将预定量的卤化物引入到流化层中，以及用于在待处理材料上形成表面层的装置，包括在处理剂的流化层中形成表面层的炉体，用于加热流化层的加热炉，与炉体外部连通的卤化物供给管和设置在炉体内的卤化物气体喷射管，其中连接到卤化物供给管，并且具有通向流化层的多个孔。

7. 发明授权

US09159663B2 Semiconductor device with respective electrode pad rows and respective external electrodes electrically connected and arranged in the respective end portions of the substrate 有权
标题翻译：具有各自的电极焊盘列和各个外部电极的半导体器件电连接并布置在衬底的各个端部中
公开(公告)号：US09159663B2
公开(公告)日：2015-10-13
申请号：US13113560
申请日：2011-05-23
申请人： Satoshi Isa , Hiromasa Takeda , Kouji Sato
发明人： Satoshi Isa , Hiromasa Takeda , Kouji Sato
IPC分类号： A63F9/02 , A63B71/14 , H01L23/498 , H01L21/683 , H01L23/13 , H01L25/065 , H01L23/31 , H01L23/00
CPC分类号： H01L23/49838 , H01L21/6836 , H01L23/13 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2224/04042 , H01L2224/05554 , H01L2224/06156 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2224/97 , H01L2225/0651 , H01L2225/06558 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/10161 , H01L2924/15311 , H01L2924/181 , H01L2224/83 , H01L2924/00 , H01L2224/78 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, pluralities of first and second external electrodes formed in two end portions of one surface of the substrate, a first semiconductor chip mounted on the other surface of the substrate, the first semiconductor chip having an electrode pad row formed in one end portion of one surface of the first semiconductor chip and electrically connected to the first external electrodes, the first semiconductor chip being disposed so that the one end portion of the first semiconductor chip is positioned on an end portion on which the first external electrodes of the substrate are formed, and a second semiconductor chip mounted on the first semiconductor chip, the second semiconductor chip having an electrode pad row formed in one end portion of one surface of the second semiconductor chip and electrically connected to the second external electrode, the second semiconductor chip being disposed so that the one end portion of the second semiconductor chip is positioned on an end portion on which the second external electrodes of the substrate are formed.
摘要翻译：半导体器件包括：衬底，形成在衬底的一个表面的两个端部中的多个第一和第二外部电极，安装在衬底的另一个表面上的第一半导体芯片，第一半导体芯片，其形成有电极焊盘排第一半导体芯片的一个表面的一个端部电连接到第一外部电极，第一半导体芯片被布置成使得第一半导体芯片的一个端部位于第一半导体芯片的第一外部电极形成基板，并且安装在第一半导体芯片上的第二半导体芯片，第二半导体芯片具有形成在第二半导体芯片的一个表面的一个端部中并电连接到第二外部电极的电极焊盘列，第二半导体芯片半导体芯片被布置成使得第二半导体芯片i的一个端部 s位于其上形成有基板的第二外部电极的端部。

8. 发明授权

US08922053B2 Semiconductor chip and semiconductor device including the same 有权
标题翻译：半导体芯片与半导体器件相同
公开(公告)号：US08922053B2
公开(公告)日：2014-12-30
申请号：US13278755
申请日：2011-10-21
申请人： Hiromasa Takeda , Hiroki Fujisawa
发明人： Hiromasa Takeda , Hiroki Fujisawa
IPC分类号： H02J3/38 , G11C7/10 , H01L23/528 , H01L23/00 , H01L23/498
CPC分类号： H01L24/14 , G11C7/1057 , H01L23/49838 , H01L23/5286 , H01L2224/1412 , H01L2224/16225 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/15311 , Y10T307/305 , Y10T307/50 , Y10T307/696 , Y10T307/707 , H01L2924/00
摘要： A semiconductor chip includes: a data output buffer that outputs a data signal; a first power-supply pad that supplies a first power-supply potential to the data output buffer; a power-supply wiring that is connected to the first power-supply pad; a strobe output buffer that outputs a strobe signal; and a second power-supply pad that supplies a second power-supply potential to the strobe output buffer. The power-supply wiring and the second power-supply pad are electrically independent of each other. Therefore, the power-supply noise associated with the switching of the data output buffer does not spread to the strobe output buffer. Thus, it is possible to improve the quality of the strobe signal.
摘要翻译：半导体芯片包括：输出数据信号的数据输出缓冲器; 第一电源焊盘，其向所述数据输出缓冲器提供第一电源电位; 连接到所述第一电源焊盘的电源配线; 输出选通信号的选通输出缓冲器; 以及向所述选通输出缓冲器提供第二电源电位的第二电源焊盘。电源布线和第二电源垫彼此电独立。因此，与数据输出缓冲器的切换相关联的电源噪声不会扩展到选通输出缓冲器。因此，可以提高选通信号的质量。

9. 发明申请

US20110291295A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110291295A1
公开(公告)日：2011-12-01
申请号：US13113560
申请日：2011-05-23
申请人： Satoshi ISA , Hiromasa Takeda , Kouji Sato
发明人： Satoshi ISA , Hiromasa Takeda , Kouji Sato
IPC分类号： H01L23/48
CPC分类号： H01L23/49838 , H01L21/6836 , H01L23/13 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2224/04042 , H01L2224/05554 , H01L2224/06156 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2224/97 , H01L2225/0651 , H01L2225/06558 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/10161 , H01L2924/15311 , H01L2924/181 , H01L2224/83 , H01L2924/00 , H01L2224/78 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, pluralities of first and second external electrodes formed in two end portions of one surface of the substrate, a first semiconductor chip mounted on the other surface of the substrate, the first semiconductor chip having an electrode pad row formed in one end portion of one surface of the first semiconductor chip and electrically connected to the first external electrodes, the first semiconductor chip being disposed so that the one end portion of the first semiconductor chip is positioned on an end portion on which the first external electrodes of the substrate are formed, and a second semiconductor chip mounted on the first semiconductor chip, the second semiconductor chip having an electrode pad row formed in one end portion of one surface of the second semiconductor chip and electrically connected to the second external electrode, the second semiconductor chip being disposed so that the one end portion of the second semiconductor chip is positioned on an end portion on which the second external electrodes of the substrate are formed.
摘要翻译：半导体器件包括：衬底，形成在衬底的一个表面的两个端部中的多个第一和第二外部电极，安装在衬底的另一个表面上的第一半导体芯片，第一半导体芯片，其形成有电极焊盘排第一半导体芯片的一个表面的一个端部电连接到第一外部电极，第一半导体芯片被布置成使得第一半导体芯片的一个端部位于第一半导体芯片的第一外部电极形成基板，并且安装在第一半导体芯片上的第二半导体芯片，第二半导体芯片具有形成在第二半导体芯片的一个表面的一个端部中并电连接到第二外部电极的电极焊盘列，第二半导体芯片半导体芯片被布置成使得第二半导体芯片i的一个端部 s位于其上形成有基板的第二外部电极的端部。

10. 发明申请

US20100289141A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100289141A1
公开(公告)日：2010-11-18
申请号：US12776070
申请日：2010-05-07
申请人： Hiromasa Takeda , Satoshi Isa , Mitsuaki Katagiri , Dai Sasaki
发明人： Hiromasa Takeda , Satoshi Isa , Mitsuaki Katagiri , Dai Sasaki
IPC分类号： H01L23/498
CPC分类号： H01L24/85 , H01L23/13 , H01L23/49838 , H01L23/50 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05554 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/4824 , H01L2224/49173 , H01L2224/73215 , H01L2224/85 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01033 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/00012 , H01L2224/49171 , H01L2224/45099 , H01L2924/00 , H01L2224/05599
摘要： Provided is a semiconductor device with a semiconductor chip mounted on a small-sized package substrate that has a large number of external connection terminals. The package substrate includes a slot, the external connection terminals, and bonding fingers. The bonding fingers are connected to the external connection terminals. The bonding fingers constitute a bonding finger arrangement in a central section and end sections of a bonding finger area along each longer side of the slot. The bonding finger arrangement includes a first bonding finger array, which is located at a close distance from the each longer side of the slot, and a second bonding finger array, which is located at a distance farther than the distance of the first bonding finger array from the each longer side of the slot. The central section of the bonding finger area includes at least the second bonding finger array, and the end sections of the bonding finger area includes the first bonding finger array.
摘要翻译：提供一种具有安装在具有大量外部连接端子的小尺寸封装基板上的半导体芯片的半导体器件。封装基板包括槽，外部连接端子和接合指。接合指状物连接到外部连接端子。接合手指构成沿着槽的每个较长侧的中心部分和接合手指区域的端部部分的接合手指装置。接合手指装置包括位于距离槽的每个较长侧较近的距离处的第一粘结手指阵列和位于比第一粘结手指阵列的距离更远的距离处的第二粘结手指阵列从插槽的每个更长的一边。接合手指区域的中心部分至少包括第二结合手指阵列，并且键合区域的端部部分包括第一粘结手指阵列。

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