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1. 发明申请

US20060246699A1 Process for electroless copper deposition on a ruthenium seed 审中-公开
标题翻译：在钌种子上沉积无电镀铜的方法
公开(公告)号：US20060246699A1
公开(公告)日：2006-11-02
申请号：US11385038
申请日：2006-03-20
申请人： Timothy Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert Chu , Frederick Wu , Kavita Shah
发明人： Timothy Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert Chu , Frederick Wu , Kavita Shah
IPC分类号： H01L21/44
CPC分类号： C23C18/40 , C23C18/1608 , C23C18/165 , H01L21/288 , H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
摘要翻译：本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

2. 发明申请

US20120315756A1 PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED 审中-公开
标题翻译：电镀铜沉积方法
公开(公告)号：US20120315756A1
公开(公告)日：2012-12-13
申请号：US13421434
申请日：2012-03-15
申请人： Timothy W. Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert S. Chu , Frederick C. Wu , Kavita Shah
发明人： Timothy W. Weidman , Arulkumar Shanmugasundram , Kapila Wijekoon , Schubert S. Chu , Frederick C. Wu , Kavita Shah
IPC分类号： H01L21/768
CPC分类号： C23C18/40 , C23C18/1608 , C23C18/165 , H01L21/288 , H01L21/76802 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
摘要翻译：本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

3. 发明申请

US20070235059A1 Method of recovering valuable material from exhaust gas stream of a reaction chamber 有权
标题翻译：从反应室的废气流中回收有价物质的方法
公开(公告)号：US20070235059A1
公开(公告)日：2007-10-11
申请号：US11400663
申请日：2006-04-07
申请人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
发明人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
IPC分类号： B08B6/00 , C25F1/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , Y02C20/30 , Y10S438/905
摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
摘要翻译：通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

4. 发明申请

US20070128863A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 失效
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070128863A1
公开(公告)日：2007-06-07
申请号：US11556758
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道。在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

5. 发明申请

US20070119371A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070119371A1
公开(公告)日：2007-05-31
申请号：US11556752
申请日：2006-11-06
申请人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The lid assembly comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, the lid assembly comprises a grounded gas manifold assembly positioned above electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，盖组件被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。盖组件包括能够被电绝缘，电接地或RF通电的部件。在一个示例中，盖组件包括位于电绝缘部件上方的接地气体歧管组件，例如绝缘帽，等离子体屏幕插入件和隔离环。一个喷头，等离子体挡板和水箱位于绝缘部件之间，当被等离子体发生器激活时变为RF热。本发明的其它实施例提供沉积工艺以在处理室内形成材料层。

6. 发明申请

US20070119370A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070119370A1
公开(公告)日：2007-05-31
申请号：US11556745
申请日：2006-11-06
申请人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，处理室被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。处理室包括能够被电绝缘，电接地或RF通电的部件。在一个示例中，室主体和气体歧管组件由诸如绝缘盖，等离子体屏幕插件和隔离环之类的电绝缘部件接地并分离。一个喷头，等离子体挡板和水箱位于绝缘部件之间，当被等离子体发生器激活时变为RF热。本发明的其它实施例提供沉积工艺以在处理室内形成材料层。

7. 发明申请

US20070077750A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS 审中-公开
标题翻译：原子材料的原子层沉积工艺
公开(公告)号：US20070077750A1
公开(公告)日：2007-04-05
申请号：US11470473
申请日：2006-09-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/18 , C23C16/45553 , H01L21/76843 , H01L21/76873 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.
摘要翻译：本发明的实施方案提供了一种通过诸如原子层沉积（ALD）和等离子体增强型ALD（PE-ALD）之类的各种气相沉积工艺在基片上沉积钌材料的方法。在一个方面，该方法很少或没有引发延迟并且在形成钌材料时保持快速的沉积速率。钌材料可以以良好的阶梯覆盖，强粘附性沉积，并且包含低碳浓度用于高电导率。用于在基底上沉积钌材料的方法通常包括在ALD工艺期间将衬底顺序地暴露于吡咯基钌前体和试剂。吡咯钌前体含有钌和至少一个吡咯基配体。在一些实例中，在PE-ALD工艺期间，试剂可以含有氨，氮或氢的等离子体。在其他实例中，在热ALD工艺期间可以使用还原气体。

8. 发明申请

US20070128862A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070128862A1
公开(公告)日：2007-06-07
申请号：US11556756
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/44 , H01L23/34
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，喷头组件包括用于在等离子体增强的气相沉积室内分散工艺气体的喷头和等离子体挡板。喷头板包括配置成将等离子体挡板定位在其中的内部区域和具有用于发射处理气体的多个孔的外部区域。等离子体挡板包括设置在上表面上以接收另一工艺气体的锥形鼻，用于发射处理气体的下表面和被配置为将工艺气体从上表面上流动到工艺区域中的多个开口。开口优选地以预定角度定位以用于以圆形流动图案发射处理气体的槽。

9. 发明授权

US07691442B2 Ruthenium or cobalt as an underlayer for tungsten film deposition 有权
标题翻译：钌或钴作为钨膜沉积的底层
公开(公告)号：US07691442B2
公开(公告)日：2010-04-06
申请号：US12197049
申请日：2008-08-22
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： B32B15/00 , B32B15/01 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.
摘要翻译：本发明的实施例提供了一种在衬底上沉积材料的方法。在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

10. 发明授权

US07678298B2 Tantalum carbide nitride materials by vapor deposition processes 有权
标题翻译：通过气相沉积工艺生产氮化钽材料
公开(公告)号：US07678298B2
公开(公告)日：2010-03-16
申请号：US11860952
申请日：2007-09-25
申请人： Kavita Shah , Haichun Yang , Schubert S. Chu
发明人： Kavita Shah , Haichun Yang , Schubert S. Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/36 , C04B35/58007 , C04B35/6325 , H01L21/28202 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L29/518 , H01L29/78
摘要： Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.
摘要翻译：本发明的实施方案通常提供碳化钽氮化物材料的组合物。在一个实施方案中，提供了包含化学式TaC x N y的化合物碳氮化物材料的组合物，其中x在约0.20至约0.50的范围内，y在约0.20至约0.55的范围内，间隙/ 元素碳原子比为约2或更大，以及晶体结构。在一些实例中，组合物提供x在约0.25至约0.40，优选约0.30至约0.40的范围内，y在约0.30至约0.50，优选约0.35至约0.50的范围内。间隙/元素碳原子比可以是约3，约4或更大。该组合物还可以具有在约1×10 4Ω·cm-1至约1×10 6Ω·cm·cm 2的范围内的薄层电阻。

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