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    • 2. 发明授权
    • Method and structure for routing power for optimum cell utilization with
two and three level metal in a partially predesigned integrated circuit
    • 用于在部分预先设计的集成电路中利用两个和三个金属级别来优化单元利用的路由功率的方法和结构
    • US5436801A
    • 1995-07-25
    • US120148
    • 1993-09-09
    • Tushar GheewalaRustam MehtaTimothy Saxe
    • Tushar GheewalaRustam MehtaTimothy Saxe
    • H01L23/528H01R9/00
    • H01L23/5286H01L2924/0002
    • An integrated circuit structure which employs at least two metal levels overlying an array of circuit elements. Each metal level contains signal routing resources which can be used for supplying power and interconnecting circuit elements. The metal levels include a first metal level directly overlying the array of circuit elements, intermediate metal levels (if there are more than two metal levels), and a top metal level overlying all other metal levels. Power carrying tracks are disposed in the top metal level. Power antennae are disposed in the first metal level, but only where necessary to provide power to the circuit elements. The power antennae are for connecting the power carrying tracks to the circuit elements. Power bridges are disposed in intermediate metal levels between the first metal level and the top metal level. The power bridges are for connecting the power carrying tracks to the power antennae. Contacts to the first metal level are used as a means by which the power antennae are connected to the circuit elements. Vias to the metal levels overlying the first metal level are used as a means by which the power carrying tracks are connected to the power bridges and the power antennae, and by which the power bridges are connected to other power bridges and the power antennae.
    • 一种集成电路结构,其采用覆盖电路元件阵列的至少两个金属电平。 每个金属层包含可用于供电和互连电路元件的信号路由资源。 金属水平包括直接覆盖电路元件阵列的第一金属水平,中间金属水平(如果存在多于两个金属水平)以及覆盖所有其它金属水平的顶部金属水平。 电力承载轨道设置在顶部金属水平面上。 功率天线设置在第一金属级,但仅在必要时向电路元件供电。 功率天线用于将电力承载轨道连接到电路元件。 功率桥被布置在第一金属层与顶层金属层之间的中间金属层。 电源桥用于将电力传输轨道连接到电源天线。 与第一金属电平的接触被用作电力天线连接到电路元件的手段。 使用覆盖在第一金属层上的金属层的通路用作电力承载轨道连接到电力桥和功率天线的装置,并且电力桥连接到其它电力桥和功率天线。
    • 3. 发明授权
    • Method of reducing test time for NVM cell-based FPGA
    • 降低NVM单元FPGA测试时间的方法
    • US06272655B1
    • 2001-08-07
    • US09096142
    • 1998-06-11
    • Volker HechtTimothy Saxe
    • Volker HechtTimothy Saxe
    • G01R3128
    • G01R31/318519
    • The present invention provides for a method of testing an FPGA using NVM memory cells for programmable interconnects. The NVM memory cells are arranged as a memory array of rows and columns. User-configurable logic elements and interconnections, which are programmed by the stored states of the memory cells, are organized into identical and/or differing tiles. The tiles are organized into an array of rows and columns superimposed upon the memory array. The testing method includes: selecting test circuit configurations by which identical tiles are identically programmed as much as possible; and simultaneously programming and simultaneously erasing pluralities of the memory rows corresponding to the tiles into the test circuit configurations. Additionally, the test circuit configurations programmed into the FPGA are tested at a lower supply voltage than that of normal operation. Programming is performed at reduced programming and erasing pulse voltages and times by substantially ignoring retention and disturb effect margin amounts for the NVM memory cells. In this manner, the time for testing the FPGA is considerably reduced.
    • 本发明提供了一种使用用于可编程互连的NVM存储器单元测试FPGA的方法。 NVM存储单元被排列成行和列的存储器阵列。 由存储器单元的存储状态编程的用户可配置的逻辑元件和互连被组织成相同和/或不同的瓦片。 瓦片被组织成叠加在存储器阵列上的行和列阵列。 测试方法包括:选择测试电路配置,通过该配置尽可能相同地编程相同的瓦片; 并且同时编辑并同时擦除对应于瓦片的多个存储器行到测试电路配置中。 此外,编程到FPGA中的测试电路配置在比正常操作更低的电源电压下进行测试。 通过基本上忽略NVM存储器单元的保留和干扰效应余量来减少编程和擦除脉冲电压和时间的编程。 以这种方式,大大减少了测试FPGA的时间。