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    • 7. 发明授权
    • Auto generation of suggested links in a search system
    • 在搜索系统中自动生成建议的链接
    • US08005816B2
    • 2011-08-23
    • US11680510
    • 2007-02-28
    • Muralidhar KrishnaprasadThomas Chang
    • Muralidhar KrishnaprasadThomas Chang
    • G06F17/30
    • G06F17/30286G06F17/30864
    • A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
    • 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部(和外部)搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种源,而不管这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性,例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询,其提供比静态查询可获得的更多当前结果列表。
    • 8. 发明授权
    • Single-side corrugated cylindrical capacitor structure of high density
DRAMs
    • 单侧波纹圆柱形电容器结构的高密度DRAM
    • US5909621A
    • 1999-06-01
    • US795789
    • 1997-02-05
    • Liang-Choo HsiaThomas Chang
    • Liang-Choo HsiaThomas Chang
    • H01L21/02H01L21/8242
    • H01L27/10852H01L28/87H01L28/91
    • A method of fabricating single-side corrugated cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells. The corrugated capacitor shape is achieved by depositing the thermal chemical vapor deposition (CVD) oxide and the plasma-enhanced CVD (PECVD) oxide alternating layers. Then, the thermal CVD oxide and the PECVD oxide layers are lateral etched by hydrofluoric acid (HF). Because hydrofluoric acid (HF) etches the thermal CVD oxide at a slower rate than etches the PECVD oxide, a cavity (undercut) is formed in each PECVD oxide layer. Therefore, the single-side corrugated shape capacitor surface is created that increases the surface area of the capacitor considerably. The cylindrical capacitor storage node of the DRAM capacitor of this method has much greater surface area so as to increase the capacitance value of the DRAM capacitor, that can achieve high packing density of the integrated circuit devices.
    • 一种制造高密度动态随机存取存储器(DRAM)单元的单面波纹圆柱形电容器的方法。 通过沉积热化学气相沉积(CVD)氧化物和等离子体增强CVD(PECVD)氧化物交替层来实现波纹电容器形状。 然后,通过氢氟酸(HF)横向蚀刻热CVD氧化物和PECVD氧化物层。 因为氢氟酸(HF)以比蚀刻PECVD氧化物更慢的速度蚀刻热CVD氧化物,所以在每个PECVD氧化物层中形成空穴(底切)。 因此,产生单侧波纹状电容器表面,从而显着地增加电容器的表面积。 该方法的DRAM电容器的圆柱形电容器存储节点具有大得多的表面积,从而增加DRAM电容器的电容值,从而可以实现集成电路器件的高封装密度。