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1. 发明申请

US20070177139A1 Nanowire heterostructures and methods of forming the same 有权
标题翻译：纳米线异质结构及其形成方法
公开(公告)号：US20070177139A1
公开(公告)日：2007-08-02
申请号：US11341705
申请日：2006-01-27
申请人： Theodore Kamins , Alexandre Bratkovski , Shashank Sharma
发明人： Theodore Kamins , Alexandre Bratkovski , Shashank Sharma
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658 , B82Y15/00 , B82Y20/00 , G02B6/107
摘要： A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.
摘要翻译：公开了包含至少一个异质结构纳米线的NERS活性结构。所述至少一个异质结构纳米线可以包括在轴向上的NERS非活性材料和NERS-活性材料的交替的段。或者，交替的区段可以是NERS-非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。在另一个替代方案中，异质结构纳米线可以包括在径向方向上具有NERS非活性材料和NERS-活性材料的交替涂层的芯。还公开了包括NERS-活性结构的NERS系统。还公开了形成NERS-活性结构的方法和用NERS-活性结构进行NERS的方法。

2. 发明申请

US20060209300A1 Ordered array of nanoparticles for efficient nanoenhanced Raman scattering detection and methods of forming the same 有权
标题翻译：有序的纳米粒子阵列用于高效纳米增强拉曼散射检测及其形成方法
公开(公告)号：US20060209300A1
公开(公告)日：2006-09-21
申请号：US11084833
申请日：2005-03-17
申请人： Theodore Kamins , Alexandre Bratkovski , Shashank Sharma
发明人： Theodore Kamins , Alexandre Bratkovski , Shashank Sharma
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658
摘要： Methods of forming NERS-active structures are disclosed that include ordered arrays of nanoparticles. Nanoparticles covered with an outer shell may be arranged in an ordered array on a substrate using Langmuir-Blodgett techniques. A portion of the outer shell may be removed, and the exposed nanoparticles may be used in a system to perform nanoenhanced Raman spectroscopy. An ordered array of nanoparticles may be used as a mask for forming islands of NERS-active material on a substrate. NERS-active structures and an NERS system that includes an NERS-active structure are also disclosed. Also disclosed are methods for performing NERS with NERS-active structures.
摘要翻译：公开了形成NERS-活性结构的方法，其包括有序的纳米颗粒阵列。覆盖有外壳的纳米颗粒可以使用Langmuir-Blodgett技术以有序阵列布置在基底上。可以去除外壳的一部分，并且暴露的纳米颗粒可用于进行纳米增强拉曼光谱的系统中。可以使用有序的纳米颗粒阵列作为在衬底上形成NERS活性材料岛的掩模。还公开了NERS-活性结构和包括NERS-活性结构的NERS系统。还公开了用NERS活性结构进行NERS的方法。

3. 发明申请

US20070252979A1 BINARY ARRAYS OF NANOPARTICLES FOR NANO-ENHANCED RAMAN SCATTERING MOLECULAR SENSORS 有权
标题翻译：纳米增强纳米增强拉曼散射分子传感器的二元阵列
公开(公告)号：US20070252979A1
公开(公告)日：2007-11-01
申请号：US11090352
申请日：2005-03-25
申请人： Alexandre Bratkovski , Theodore Kamins
发明人： Alexandre Bratkovski , Theodore Kamins
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658
摘要： A nano-enhanced Raman scattering (NERS)-active structure includes a substrate, a monolayer of nanoparticles disposed on a surface of the substrate, and a spacer material surrounding each nanoparticle in the monolayer of nanoparticles. The monolayer of nanoparticles includes a first plurality of nanoparticles and a second plurality of nanoparticles. The nanoparticles of the second plurality are interspersed among the first plurality and exhibit a plasmon frequency that differs from any plasmon frequency exhibited by the first plurality. Also described are a method for forming such a NERS-active structure and a NERS system that includes a NERS-active structure, an excitation radiation source, and a detector for detecting Raman scattered radiation.
摘要翻译：纳米增强拉曼散射（NERS）活性结构包括底物，设置在基底表面上的单层纳米颗粒，以及围绕纳米颗粒单层中的每个纳米颗粒的间隔物。纳米颗粒的单层包括第一多个纳米颗粒和第二多个纳米颗粒。第二多个纳米颗粒散布在第一多个中，并且表现出与第一多个表现出的任何等离子体频率不同的等离子体激元频率。还描述了形成这样的NERS-活性结构的方法和包括NERS-活性结构，激发辐射源和用于检测拉曼散射辐射的检测器的NERS系统。

4. 发明申请

US20060146323A1 Nanowires for surface-enhanced raman scattering molecular sensors 有权
标题翻译：纳米线用于表面增强的拉曼散射分子传感器
公开(公告)号：US20060146323A1
公开(公告)日：2006-07-06
申请号：US11030733
申请日：2005-01-06
申请人： Alexandre Bratkovski , M. Islam , Theodore Kamins , Zhiyong Li , Shih-Yuan Wang
发明人： Alexandre Bratkovski , M. Islam , Theodore Kamins , Zhiyong Li , Shih-Yuan Wang
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658
摘要： A SERS-active structure is disclosed that includes a substrate and at least two nanowires disposed on the substrate. Each of the at least two nanowires has a first end and a second end, the first end being attached to the substrate and the second end having a SERS-active tip. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.
摘要翻译：公开了一种SERS-活性结构，其包括衬底和设置在衬底上的至少两个纳米线。所述至少两个纳米线中的每一个具有第一端和第二端，所述第一端附接到所述基底，所述第二端具有SERS活性末端。还公开了包括SERS活性结构的SERS系统。还公开了形成SERS活性结构的方法和用SERS活性结构进行SERS的方法。

5. 发明申请

US20070228583A1 Methods of bridging lateral nanowires and device using same 审中-公开
公开(公告)号：US20070228583A1
公开(公告)日：2007-10-04
申请号：US11710283
申请日：2007-02-23
申请人： M. Islam , Theodore Kamins , Shashank Sharma
发明人： M. Islam , Theodore Kamins , Shashank Sharma
IPC分类号： H01L23/48
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

6. 发明申请

US20050133476A1 Methods of bridging lateral nanowires and device using same 失效
标题翻译：桥接横向纳米线的方法及其使用方法
公开(公告)号：US20050133476A1
公开(公告)日：2005-06-23
申请号：US10738176
申请日：2003-12-17
申请人： M. Islam , Theodore Kamins , Shashank Sharma
发明人： M. Islam , Theodore Kamins , Shashank Sharma
IPC分类号： D01F9/127 , H01L21/768 , H01L23/532 , H01L51/30 , C23F1/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.
摘要翻译：半导体纳米线横向生长。生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。自组装纳米线的方法在激活的电极对之间桥接纳米线。控制纳米线生长的方法在垂直表面形成表面不规则性。电子设备包括横向生长的纳米级互连。

7. 发明申请

US20070105356A1 Method of controlling nanowire growth and device with controlled-growth nanowire 审中-公开
标题翻译：控制纳米线生长和器件的方法
公开(公告)号：US20070105356A1
公开(公告)日：2007-05-10
申请号：US11272347
申请日：2005-11-10
申请人： Wei Wu , Theodore Kamins , Shashank Sharma , R. Williams
发明人： Wei Wu , Theodore Kamins , Shashank Sharma , R. Williams
IPC分类号： H01L21/20 , H01L21/44 , C30B11/00
CPC分类号： H01L21/76879 , H01L21/28525 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： Nanowire growth in situ on a planar surface, which is one of a crystalline surface having any crystal orientation, a polycrystalline surface and a non-crystalline surface, is controlled by guiding catalyzed growth of the nanowire from the planar surface in a nano-throughhole of a patterned layer formed on the planar surface, such that the nanowire grows in situ perpendicular to the planar surface. An electronic device includes first and second regions of electronic circuitry vertically spaced by the patterned layer. The nano-throughhole of the patterned layer extends perpendicularly between the regions. The first region has the planar surface. The device further includes a nanowire extending perpendicular from a catalyst location on the planar surface of the first region in the nano-throughhole. The nanowire forms a component of a nano-scale circuit that connects the regions.
摘要翻译：在具有任何晶体取向，多晶表面和非结晶表面的晶体表面之一的平坦表面上原位生长的纳米线通过在纳米通孔的纳米通孔中引导纳米线从平坦表面的催化生长来控制形成在平坦表面上的图案层，使得纳米线垂直于平面表面原位生长。电子设备包括由图案化层垂直间隔开的电子电路的第一和第二区域。图案化层的纳米通孔在区域之间垂直延伸。第一区具有平面。该装置还包括从纳米通孔中的第一区域的平坦表面上的催化剂位置垂直延伸的纳米线。纳米线形成连接这些区域的纳米级电路的组件。

8. 发明申请

US20070252132A1 Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles 有权
标题翻译：纳米线器件和系统，发光纳米线和精确定位纳米粒子的方法
公开(公告)号：US20070252132A1
公开(公告)日：2007-11-01
申请号：US11413375
申请日：2006-04-28
申请人： Theodore Kamins , Philip Kuekes , Stanley Williams
发明人： Theodore Kamins , Philip Kuekes , Stanley Williams
IPC分类号： H01L29/06
CPC分类号： H01L33/18 , B82Y20/00 , G02F2001/0152 , G02F2001/0156 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L33/06 , H01L33/08 , H01S3/0903 , H01S5/02236 , H01S5/0424 , H01S5/10 , H01S5/2045 , H01S5/3219 , H01S5/341 , H01S5/3424 , H01S5/34386 , Y10S977/752 , Y10S977/762 , Y10S977/949 , Y10S977/95
摘要： A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.
摘要翻译：辐射发射器件包括结构和电耦合到第一电极和第二电极的纳米线。纳米线包括双电极结构半导体器件，其被配置为当在电极之间施加电压时发射电磁辐射。一种器件包括具有主动纵向段的纳米线，该有源纵向段选择性地设置在谐振腔内的预定位置处，该谐振腔被配置为在从约300纳米到约2,000纳米的范围内共振由该区段发射的电磁辐射的至少一个波长。活性纳米颗粒通过在已知生长速率下生长段纳米线以选定的时间量精确地定位在谐振腔中。

9. 发明申请

US20060164634A1 Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same 有权
标题翻译：纳米增强拉曼光谱 - 包括细长组分的活性纳米结构及其制备方法
公开(公告)号：US20060164634A1
公开(公告)日：2006-07-27
申请号：US11044105
申请日：2005-01-27
申请人： Theodore Kamins , R. Stanley Williams
发明人： Theodore Kamins , R. Stanley Williams
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658
摘要： An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.
摘要翻译：公开了一种包括衬底和设置在衬底上的至少一个细长部件的NERS-活性结构。所述至少一个细长部件可以包括两个导电条，包括NERS-活性材料和位于两个导电条之间的绝缘条。或者，至少一个细长部件可以包括均匀的部件。还公开了包括NERS活性结构的NERS系统。还公开了形成NERS活性结构的方法和用NERS活性结构进行NERS的方法。

10. 发明申请

US20070228459A1 Integrated semiconductor circuits and methods of making integrated semiconductor circuits 有权
标题翻译：集成半导体电路和制造集成半导体电路的方法
公开(公告)号：US20070228459A1
公开(公告)日：2007-10-04
申请号：US11393845
申请日：2006-03-31
申请人： Theodore Kamins
发明人： Theodore Kamins
IPC分类号： H01L29/94
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L31/101 , H01L33/005 , H01L33/02
摘要： An integrated semiconductor circuit includes a substrate having a surface of a first semiconductor material, at least one separating material formed on the surface and defining a through hole, and a guide region formed in the hole. The guide region comprises at least one second semiconductor material. The guide region comprises at least a first region and a second region having a larger cross-section than the first region. The first region contacts the surface of the substrate over a small contact region. Methods of making the integrated semiconductor circuit are also disclosed.
摘要翻译：集成半导体电路包括具有第一半导体材料的表面的基板，形成在表面上并限定通孔的至少一个分离材料和形成在孔中的引导区域。引导区域包括至少一个第二半导体材料。引导区域至少包括具有比第一区域更大的横截面的第一区域和第二区域。第一区域在小的接触区域上接触衬底的表面。还公开了制造集成半导体电路的方法。

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