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1. 发明授权

US07455790B2 Emission spectroscopic processing apparatus and plasma processing method using it 失效
标题翻译：发射光谱处理装置及其等离子体处理方法
公开(公告)号：US07455790B2
公开(公告)日：2008-11-25
申请号：US11075803
申请日：2005-03-10
申请人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
发明人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
IPC分类号： H01L21/302
CPC分类号： H01J37/32972 , G01L21/30 , G01N21/73 , H01J37/32935
摘要： A plasma processing method using a spectroscopic processing unit which includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition step, and terminating the predetermined plasma process.
摘要翻译：一种使用分光处理单元的等离子体处理方法，其包括将从真空处理室发射的光谱等离子体辐射分离成分量光谱，将分量光谱转换为以预定周期由不同波长分量组成的模拟电信号的时间序列，将模拟不同波长分量的信号，在预定周期的基础上将多个相加的信号转换为数字量，在多信号的基础上将多个相加和转换的信号多次数字地相加多个，分别确定终点基于由数字添加步骤产生的信号，并终止预定等离子体处理的预定等离子体处理。

2. 发明授权

US06716300B2 Emission spectroscopic processing apparatus 失效
标题翻译：发射光谱处理装置
公开(公告)号：US06716300B2
公开(公告)日：2004-04-06
申请号：US10090759
申请日：2002-03-06
申请人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
发明人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
IPC分类号： H05H100
CPC分类号： H01J37/32972 , G01L21/30 , G01N21/73 , H01J37/32935
摘要： An emission spectroscopic processing apparatus includes a spectroscope for spectrally separating input light emitted from a process unit into component spectra, a light receiving unit including a series of light receiving elements for detecting light quantities of the component spectra on a wavelength basis, a first signal hold unit for holding sequentially each of detection signals outputted from a subset of adjacent light receiving elements contained in series of light receiving elements during a first period, an adder unit for adding together the detection signals of adjacent light receiving elements of the light receiving unit inclusive of the held detection signals of the subset of adjacent light receiving elements, a second signal hold unit for holding sequentially sum outputs of the adder unit, and a signal processing unit for determining a state of the process unit on the basis of the output of the second signal hold unit.
摘要翻译：发射光谱处理装置包括用于将从处理单元发射的输入光谱分解成分量光谱的分光镜，包括用于基于波长检测分量光谱的光量的一系列光接收元件的光接收单元，第一信号保持单元，用于在第一时段期间顺序地保持从包含在一系列光接收元件中的相邻光接收元件的子集输出的每个检测信号;加法器单元，用于将光接收单元的相邻光接收元件的检测信号相加包括相邻光接收元件的子集的保持的检测信号，用于保持加法器单元的顺序和输出的第二信号保持单元，以及用于基于第二信号的输出来确定处理单元的状态的信号处理单元信号保持单元。

3. 发明申请

US20050155952A1 Emission spectroscopic processing apparatus and plasma processing method using it 失效
标题翻译：发射光谱处理装置及其等离子体处理方法
公开(公告)号：US20050155952A1
公开(公告)日：2005-07-21
申请号：US11075803
申请日：2005-03-10
申请人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
发明人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
IPC分类号： G01L21/30 , G01N21/73 , H01J37/32 , B44C1/22
CPC分类号： H01J37/32972 , G01L21/30 , G01N21/73 , H01J37/32935
摘要： A plasma processing method using a spectroscopic processing unit which includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition step, and terminating the predetermined plasma process.
摘要翻译：一种使用分光处理单元的等离子体处理方法，其包括将从真空处理室发射的光谱等离子体辐射分离成分量光谱，将分量光谱转换为以预定周期由不同波长分量组成的模拟电信号的时间序列，将模拟不同波长分量的信号，在预定周期的基础上将多个相加的信号转换为数字量，在多信号的基础上将多个相加和转换的信号多次数字地相加多个，分别确定终点基于由数字添加步骤产生的信号，并终止预定等离子体处理的预定等离子体处理。

4. 发明授权

US06890771B2 Plasma processing method using spectroscopic processing unit 失效
标题翻译：使用光谱处理单元的等离子体处理方法
公开(公告)号：US06890771B2
公开(公告)日：2005-05-10
申请号：US10659394
申请日：2003-09-11
申请人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
发明人： Tetsunori Kaji , Shizuaki Kimura , Tatehito Usui , Takashi Fujii
IPC分类号： G01L21/30 , G01N21/73 , H01J37/32 , H01L21/00 , C23F1/00 , H05H1/00
CPC分类号： H01J37/32972 , G01L21/30 , G01N21/73 , H01J37/32935
摘要： A plasma processing method using a spectroscopic processing unit. The method includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition, and terminating the predetermined plasma process.
摘要翻译：一种使用光谱处理单元的等离子体处理方法。该方法包括将从真空处理室发射的光谱等离子体辐射分离为分量光谱，将分量光谱转换为以预定周期由不同波长分量组成的模拟电信号的时间序列，将不同波长分量的模拟信号相加，转换在预定周期的基础上将多个相加的信号转换为数字量，在多信号的基础上将多个相加和转换的信号多次数字地相加在一起，从而基于判断性地确定预定等离子体处理的终点由数字加法产生的信号，并终止预定的等离子体处理。

5. 发明授权

US07230720B2 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
标题翻译：使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法
公开(公告)号：US07230720B2
公开(公告)日：2007-06-12
申请号：US11256967
申请日：2005-10-25
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B9/02 , G01B11/02 , G01J3/45 , G01R31/26
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译：干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。标准图案使用波长作为参数。然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案强度。实际图案也使用波长作为参数。然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。

6. 发明授权

US06903826B2 Method and apparatus for determining endpoint of semiconductor element fabricating process 有权
标题翻译：用于确定半导体元件制造工艺的端点的方法和装置
公开(公告)号：US06903826B2
公开(公告)日：2005-06-07
申请号：US09946504
申请日：2001-09-06
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
IPC分类号： G01B11/06 , G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译：对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。这些标准模式使用波长作为参数。然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。

7. 发明申请

US20050018207A1 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
标题翻译：使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法
公开(公告)号：US20050018207A1
公开(公告)日：2005-01-27
申请号：US10918367
申请日：2004-08-16
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B11/06 , H01L21/00 , H01L21/66 , G01B9/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译：干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。标准图案使用波长作为参数。然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案强度。实际图案也使用波长作为参数。然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。

8. 发明授权

US07411684B2 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
标题翻译：使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法
公开(公告)号：US07411684B2
公开(公告)日：2008-08-12
申请号：US11759536
申请日：2007-06-07
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B11/02 , G01B9/02 , G01J3/45
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译：一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案，相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。

9. 发明申请

US20070229845A1 FILM THICKNESS MEASURING METHOD OF MEMBER TO BE PROCESSED USING EMISSION SPECTROSCOPY AND PROCESSING METHOD OF THE MEMBER USING THE MEASURING METHOD 有权
标题翻译：使用发射光谱处理的成员的薄膜厚度测量方法和使用测量方法的成员的处理方法
公开(公告)号：US20070229845A1
公开(公告)日：2007-10-04
申请号：US11759536
申请日：2007-06-07
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B9/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.
摘要翻译：一种系统，包括：用于测量待处理部件的膜厚度的膜厚度测量装置，包括：差分波形图案数据库，用于保持由多个波长中的每一个的干涉光的时间差分值组成的标准图案，相对于要处理的第一构件的膜厚度; 用于测量待处理的第二构件的多个波长中的每一个的干涉光的强度的单元; 用于获得由测量的干涉光强度的时间差值组成的实际图案的单元; 以及通过使用多个波长的接收干涉光中的第二波长的接收干涉光的强度的差分值的零交叉点的图案来确定胶片的处理量的单元。

10. 发明授权

US06961131B2 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
公开(公告)号：US06961131B2
公开(公告)日：2005-11-01
申请号：US10918367
申请日：2004-08-16
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B11/06 , H01L21/00 , H01L21/66 , G01B9/02 , G01R31/26
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

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