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1. 发明授权

US5818398A Surface mounting type antenna system 失效
标题翻译：表面安装型天线系统
公开(公告)号：US5818398A
公开(公告)日：1998-10-06
申请号：US823828
申请日：1997-03-25
申请人： Teruhisa Tsuru , Haruhumi Mandai , Koji Shiroki , Kenji Asakura
发明人： Teruhisa Tsuru , Haruhumi Mandai , Koji Shiroki , Kenji Asakura
IPC分类号： H01Q1/36 , H01Q11/08 , H01Q1/24
CPC分类号： H01Q1/362 , H01Q11/08
摘要： A surface mounting type antenna system 10 is formed by spirally winding a conductor 14 made of copper or copper alloy, with a power supply member 12 provided at one end of the conductor 14, the other end thereof being a free end 13, on the edge faces of a rectangular parallelepiped as a dielectric substrate 11 by printing, deposition, pasting or plating. The dielectric substrate 11 is prepared by stacking a plurality of layers of ceramics, resin or a combination of ceramics and resin. On the underside 111 of the dielectric substrate 11 lies a power supply terminal 15 to which the power supply member 12 of the conductor 14 is connected. The power supply terminal 15 is simultaneously used as a fixing terminal for securing the surface mounting type antenna system 10 to, for example, a mounting board. Moreover, the conductor 14 squarely intersecting the axis C of the conductor winding is rectangular in transverse cross section having a width of w and a length of l.
摘要翻译：表面安装型天线系统10通过螺旋地缠绕由铜或铜合金制成的导体14而形成，电源构件12设置在导体14的一端，另一端为自由端13，在边缘通过印刷，沉积，糊化或电镀作为电介质基板11的长方体的表面。电介质基板11通过层叠多层陶瓷，树脂或陶瓷和树脂的组合来制备。电介质基板11的下侧111位于与导体14的电源部件12连接的电源端子15上。电源端子15同时用作用于将表面安装型天线系统10固定到例如安装板的固定端子。此外，与导体绕组的轴线C正交地交叉的导体14在宽度为w且长度为l的横截面中为矩形。

2. 发明授权

US4766409A Thermistor having a positive temperature coefficient of resistance 失效
标题翻译：具有正温度系数的热敏电阻
公开(公告)号：US4766409A
公开(公告)日：1988-08-23
申请号：US801679
申请日：1985-11-25
申请人： Haruhumi Mandai
发明人： Haruhumi Mandai
IPC分类号： H01C1/14 , H01C7/02 , H01C7/10
CPC分类号： H01C7/021 , H01C1/1406 , Y10T29/49085
摘要： A thermistor which includes a ceramic sintered body formed of a plurality of inner electrodes alternating with a corresponding plurality of ceramic layers, outer electrodes being connected to specific ones of the inner electrodes. Each ceramic layer a positive temperature coefficient of resistance. The inner electrode layers are obtained by injecting molten base metal having a low melting point such as lead, tin or lead-tin alloy into gap layers previously defined in the sintered body between the laminated ceramic layers from the outside under pressure and hardening the same.
摘要翻译：一种热敏电阻，其包括由与相应的多个陶瓷层交替的多个内部电极形成的陶瓷烧结体，外部电极与特定的内部电极连接。每个陶瓷层的正温度系数为电阻。内部电极层通过在压力下从外部将层状陶瓷层中预先限定在烧结体中的熔融基底金属如铅，锡或铅锡合金注入到熔融基底中而获得，并将其硬化。

3. 发明授权

US4612140A Non-linear electrical resistor having varistor characteristics 失效
标题翻译：具有变阻器特性的非线性电阻器
公开(公告)号：US4612140A
公开(公告)日：1986-09-16
申请号：US597359
申请日：1984-04-06
申请人： Haruhumi Mandai , Kazutaka Nakamura , Yasuyuki Naito , Kiyoshi Iwai
发明人： Haruhumi Mandai , Kazutaka Nakamura , Yasuyuki Naito , Kiyoshi Iwai
IPC分类号： H01C7/10 , C04B35/46 , C04B35/47 , H01C7/115 , H01B1/06
CPC分类号： H01C7/115 , C04B35/47
摘要： A ceramic composition for use in production of non-linear resistors. This composition comprises strontium titanate (or a mixture containing strontium titanate as a major ingredient) and 0.1 to 1.0 mol % of Er.sub.2 O.sub.3, Ho.sub.2 O.sub.3 or mixtures thereof. In a preferred composition 0.02 to 0.2 mol % of at least one of MnO.sub.2, Co.sub.2 O.sub.3 or mixtures thereof are included. Non-linear resistors produced using the composition are comparable to those produced from conventional ceramic compositions in the threshold level voltage and non-linear factor but have greatly improved flexural strength.
摘要翻译：用于生产非线性电阻器的陶瓷组合物。该组合物包含钛酸锶（或以钛酸锶为主要成分的混合物）和0.1〜1.0摩尔％的Er2O3，Ho2O3或其混合物。在优选的组合物中，包括0.02〜0.2摩尔％的MnO 2，Co 2 O 3或其混合物中的至少一种。使用该组合物制造的非线性电阻器与在阈值电压和非线性因子中由常规陶瓷组合物制造的非线性电阻器相当，但是具有大大提高的弯曲强度。

4. 发明授权

US4698605A Monolithic LC feed-through filter having a ferrite body with a re-oxidized capacitive layer 失效
标题翻译：具有具有再氧化电容层的铁氧体的单片LC馈通滤波器
公开(公告)号：US4698605A
公开(公告)日：1987-10-06
申请号：US830909
申请日：1986-02-18
申请人： Eiji Imamura , Takashi Kumokawa , Fumio Nakayama , Haruhumi Mandai , Iwao Fukutani , Kunisaburo Tomono
发明人： Eiji Imamura , Takashi Kumokawa , Fumio Nakayama , Haruhumi Mandai , Iwao Fukutani , Kunisaburo Tomono
IPC分类号： H03H7/075 , H01F27/00 , H01G4/35 , H01G4/40 , H03H1/00 , H03H5/02 , H03H7/01
CPC分类号： H03H1/0007
摘要： This disclosure is directed to an improved LC filter which includes a cylindrical ferrite member of a semi-conductor material formed with an inner bore which axially extends through its central portion, and having its grain boundary and/or at least its outer peripheral surface formed into an insulating layer, an electrode provided at least on the outer peripheral surface of the cylindrical ferrite member, and a through-conductor inserted into the inner bore of the cylindrical ferrite member.
摘要翻译：本公开涉及一种改进的LC滤波器，其包括半导体材料的圆柱形铁氧体元件，所述圆柱形铁氧体元件形成有内孔，所述内孔轴向延伸穿过其中心部分，并且具有其晶界和/或至少其外周表面形成绝缘层，至少设置在圆筒形铁氧体构件的外周面上的电极和插入圆筒形铁氧体构件的内孔中的通孔导体。

5. 发明授权

US4403236A Boundary layer type semiconducting ceramic capacitors with high capacitance 失效
标题翻译：具有高电容的边界层型半导体陶瓷电容器
公开(公告)号：US4403236A
公开(公告)日：1983-09-06
申请号：US193400
申请日：1980-10-02
申请人： Haruhumi Mandai , Kunitaro Nishimura , Masami Yamaguchi
发明人： Haruhumi Mandai , Kunitaro Nishimura , Masami Yamaguchi
IPC分类号： H01G4/12 , H01L29/12
CPC分类号： C04B35/4682 , C04B35/47 , C04B35/49 , C04B35/62695 , C04B41/009 , C04B41/52 , C04B41/90 , H01G4/1281 , C04B2111/00844 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3236 , C04B2235/3248 , C04B2235/3251 , C04B2235/3258 , C04B2235/3262 , C04B2235/3281 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/652 , C04B2235/6582 , C04B2235/661 , C04B2235/78 , C04B2235/786 , C04B2235/85
摘要： A boundary layer type semiconducting ceramic capacitor with high capacitance is disclosed. The capacitor comprises a semiconducting ceramic body in which grain boundaries on crystal grains of the semiconducting ceramic body are insulated, characterized in that said semiconducting ceramic body has a composition consisting essentially of 98.1 to 99.88 mole % of a main component (Sr.sub.1-x Ba.sub.x)Tio.sub.3 or (Sr.sub.1-x Ba.sub.x)TiO.sub.3 modified with a titanete and/or a zirconate, wherein x is a mole fraction of Ba and takes a value ranging from 0.30 to 0.50, and 0.1 to 1.0 mole % of at least one semiconductorizing agent selected from the group consisting of rare earth elements, Nb, Ta and W, and that said grain boundaries of the crystal grains are insulated by at least one insulating agent selected from the group consisting of Mn, Bi, Cu, Pb, B and Si, and that the maximum crystal grain present in the semiconducting ceramic body has a grain size ranging from 100 to 250.mu.. The composition contains 0.02 to 0.2 mole % of Mn as a mineralizing agent or insulating agent. The composition may further contain at least one of 0.05 to 0.5 mole % of SiO.sub.2 and 0.02 to 0.2 mole % of Al.sub.2 O.sub.3.
摘要翻译：公开了一种具有高电容的边界层型半导体陶瓷电容器。电容器包括半导体陶瓷体，其中半导体陶瓷体的晶粒上的晶界被绝缘，其特征在于，所述半导体陶瓷体具有基本上由主成分（Sr1-xBax）Tio3的98.1至99.88摩尔％或用钛酸盐和/或锆酸盐改性的（Sr1-xBax）TiO3，其中x是Ba的摩尔分数，其值为0.30〜0.50，0.1〜1.0摩尔％的至少一种选自由稀土元素Nb，Ta和W组成的组，并且晶粒的所述晶界被选自Mn，Bi，Cu，Pb，B和Si中的至少一种绝缘剂绝缘，并且存在于半导体陶瓷体中的最大晶粒的晶粒尺寸为100-250μm。该组合物含有0.02〜0.2摩尔％的Mn作为矿化剂或绝缘剂。组合物还可以含有0.05〜0.5摩尔％的SiO 2和0.02〜0.2摩尔％的Al 2 O 3中的至少一种。

6. 发明授权

US4380559A Method for producing boundary layer semiconductor ceramic capacitors 失效
标题翻译：边界层半导体陶瓷电容器的制造方法
公开(公告)号：US4380559A
公开(公告)日：1983-04-19
申请号：US190711
申请日：1980-09-25
申请人： Haruhumi Mandai , Kunitaro Nishimura , Yoshiaki Kohno , Masami Yamaguchi
发明人： Haruhumi Mandai , Kunitaro Nishimura , Yoshiaki Kohno , Masami Yamaguchi
IPC分类号： H01G4/12 , H01G4/10
CPC分类号： H01G4/1281
摘要： A method for producing boundary layer semiconductor ceramic capacitors comprises firing shaped bodies of a semiconductor ceramic material in a neutral or reducing atmosphere, heat-treating the resultant semiconductor ceramic bodies to insulatorize crystal grain boundaries of the semiconductor ceramics, and providing opposite electrodes on surfaces of the heat-treated semiconductor ceramic bodies and is characterized in that said heat-treating is carried out by heating the semiconductor ceramic bodies together with power of an insulatorizing agent with stirring in a neutral or oxidizing atmosphere at a temperature ranging from 950.degree. to 1300.degree. C. As a semiconductor ceramic material, there may be used semiconductor ceramics of a barium titanate system, or of a strontium titanate system, or a complex semiconductor ceramic mainly comprising barium titanate or calcium titanate and strontium titanate. This method enables one to produce boundary layer semiconductor ceramics as good quality with small standard deviation and high yield.
摘要翻译：制造边界层半导体陶瓷电容器的方法包括在中性或还原性气氛中烧成半导体陶瓷材料的成形体，热处理所得到的半导体陶瓷体，使半导体陶瓷的晶界绝缘，并且在所述热处理半导体陶瓷体的特征在于，所述热处理是通过在中性或氧化性气氛中在950〜1300℃的温度下搅拌将半导体陶瓷体与绝缘体的功率一起加热而进行的 C.作为半导体陶瓷材料，可以使用钛酸钡体系或钛酸锶系的半导体陶瓷，或主要包含钛酸钡或钛酸钙和钛酸锶的复合半导体陶瓷。这种方法使得能够以小的标准偏差和高产率生产边界层半导体陶瓷，质量好。

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