专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09170587B2 Current control semiconductor element and control device using the same 有权
标题翻译：电流控制半导体元件及使用其的控制装置
公开(公告)号：US09170587B2
公开(公告)日：2015-10-27
申请号：US13818107
申请日：2011-08-01
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G05F1/46 , G05F1/10 , H02P3/22 , H02P6/24
CPC分类号： G05F1/10 , H02P3/22 , H02P6/24
摘要： This invention provides a current control semiconductor element that can detect a current with high accuracy in a single IC chip by dynamically correcting changes in a gain a and an offset b, and a control device that uses the current control semiconductor element, the current control semiconductor element has a transistor 4, a current-to-voltage conversion circuit 22 and an AD converter 23 on the same semiconductor chip. A reference current generation circuit 6 superimposes a current pulse Ic on a current of a load 2 and changes a voltage digital value to be output from the AD converter. A gain/offset corrector 8 executes signal processing on change in the voltage digital value caused by the reference current generation circuit 6 to dynamically acquire the gain a and the offset b that are used in an equation that indicates a linear relationship between the voltage digital value output from the AD converter 23 and the current digital value of the load. A current digital value calculator 12 uses the gain and the offset acquired by the gain/offset corrector 8 to correct the voltage value output from the AD converter.
摘要翻译：本发明提供了一种电流控制半导体元件，其可以通过动态地校正增益a和偏移b的变化，以及使用电流控制半导体元件的控制装置，电流控制半导体，可以在单个IC芯片中以高精度检测电流元件在相同的半导体芯片上具有晶体管4，电流 - 电压转换电路22和AD转换器23。参考电流产生电路6将电流脉冲Ic叠加在负载2的电流上，并改变要从AD转换器输出的电压数字值。增益/偏移校正器8对由参考电流产生电路6引起的电压数字值的变化执行信号处理，以动态地获取在表示电压数字值之间的线性关系的方程式中使用的增益a和偏移量b AD转换器23的输出和负载的当前数字值。当前数字值计算器12使用由增益/偏移校正器8获取的增益和偏移来校正从AD转换器输出的电压值。

2. 发明申请

US20130147453A1 Current Control Semiconductor Element and Control Device Using the Same 有权
标题翻译：电流控制半导体元件及其使用方法
公开(公告)号：US20130147453A1
公开(公告)日：2013-06-13
申请号：US13818107
申请日：2011-08-01
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G05F1/10
CPC分类号： G05F1/10 , H02P3/22 , H02P6/24
摘要： This invention provides a current control semiconductor element that can detect a current with high accuracy in a single IC chip by dynamically correcting changes in a gain a and an offset b, and a control device that uses the current control semiconductor element.The current control semiconductor element has a transistor 4, a current-to-voltage conversion circuit 22 and an AD converter 23 on the same semiconductor chip. A reference current generation circuit 6 superimposes a current pulse Ic on a current of a load 2 and changes a voltage digital value to be output from the AD converter. A gain/offset corrector 8 executes signal processing on change in the voltage digital value caused by the reference current generation circuit 6 to dynamically acquire the gain a and the offset b that are used in an equation that indicates a linear relationship between the voltage digital value output from the AD converter 23 and the current digital value of the load. A current digital value calculator 12 uses the gain and the offset acquired by the gain/offset corrector 8 to correct the voltage value output from the AD converter.
摘要翻译：本发明提供一种电流控制半导体元件，其通过动态地校正增益a和偏移量b的变化，以及使用电流控制半导体元件的控制装置，可以在单个IC芯片中以高精度检测电流。电流控制半导体元件在相同的半导体芯片上具有晶体管4，电流 - 电压转换电路22和AD转换器23。参考电流产生电路6将电流脉冲Ic叠加在负载2的电流上，并改变要从AD转换器输出的电压数字值。增益/偏移校正器8对由参考电流产生电路6引起的电压数字值的变化执行信号处理，以动态地获取在表示电压数字值之间的线性关系的方程式中使用的增益a和偏移量b AD转换器23的输出和负载的当前数字值。当前数字值计算器12使用由增益/偏移校正器8获取的增益和偏移来校正从AD转换器输出的电压值。

3. 发明申请

US20110101959A1 CURRENT-CONTROLLED SEMICONDUCTOR DEVICE AND CONTROL UNIT USING THE SAME 有权
标题翻译：电流控制的半导体器件和使用它的控制单元
公开(公告)号：US20110101959A1
公开(公告)日：2011-05-05
申请号：US12868236
申请日：2010-08-25
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G01R19/00
CPC分类号： G01R19/0092 , H03K17/0822
摘要： The present invention aims to provide a current-controlled semiconductor device which corrects fluctuations of both gain and offset of a current detection circuit to thereby enable high-accuracy current detection within a single-chip IC, and a control unit using the same.The current-controlled semiconductor device 100 is provided on the same semiconductor chip with a MOSFET 110H, two constant current sources, and a current detection circuit 120 which detects a current of the MOSFET and currents of the constant current sources. Further, the constant current sources are equipped with an external connecting terminal T5 for measuring their current values. A correction measured-value holding register 145 holds therein the current values of the constant current sources, which have been measured from outside.
摘要翻译：本发明的目的在于提供一种校正电流检测电路的增益和偏移波动的电流控制半导体器件，从而能够实现单芯片IC内的高精度电流检测，以及使用该半导体装置的控制单元。电流控制半导体器件100设置在具有MOSFET 110H，两个恒定电流源的同一半导体芯片上，以及电流检测电路120，其检测MOSFET的电流和恒流源的电流。此外，恒流源配备有用于测量其电流值的外部连接端子T5。校正测量值保持寄存器145在其中保存已经从外部测量的恒定电流源的当前值。

4. 发明授权

US08653601B2 Current control semiconductor element and control device using the same 有权
标题翻译：电流控制半导体元件及使用其的控制装置
公开(公告)号：US08653601B2
公开(公告)日：2014-02-18
申请号：US13807278
申请日：2011-06-02
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： H01L21/8234 , H01L29/76 , H02M3/24
CPC分类号： H01L27/088 , H01L27/0211 , H01L27/0266 , H01L29/41758 , H01L29/4238 , H03K17/145
摘要： This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor element 1 includes a main MOSFET 7 that drives a current and a sense MOSFET 8 that is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the center of the multi-finger MOSFET 7 and a channel located farthest from the center of the multi-finger MOSFET 7 is indicated by L, a channel that is located closest to a position distant by a distance of (L/(√3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET 8.
摘要翻译：本发明提供了一种电流控制半导体元件，其中消除了感测比对温度分布的依赖性，并且可以提高使用感测MOSFET的电流检测的精度，并提供使用电流控制半导体元件的控制装置。电流控制半导体元件1包括驱动电流的主MOSFET 7和并联连接到主MOSFET的感测MOSFET 8，并且检测从主MOSFET的电流分流的电流。主MOSFET使用具有多个通道并排列成一排的多指MOSFET形成。当多指MOSFET 7的中心与距离多指MOSFET 7的中心最远的通道之间的距离由L表示时，位于最靠近距离为（L / （√3））从多指MOSFET的中心用作感测MOSFET 8的通道。

5. 发明申请

US20130105913A1 Current Control Semiconductor Element and Control Device Using the Same 有权
标题翻译：电流控制半导体元件及其使用方法
公开(公告)号：US20130105913A1
公开(公告)日：2013-05-02
申请号：US13807278
申请日：2011-06-02
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L27/0211 , H01L27/0266 , H01L29/41758 , H01L29/4238 , H03K17/145
摘要： This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor element 1 includes a main MOSFET 7 that drives a current and a sense MOSFET 8 that is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the center of the multi-finger MOSFET 7 and a channel located farthest from the center of the multi-finger MOSFET 7 is indicated by L, a channel that is located closest to a position distant by a distance of (L/(√3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET 8.
摘要翻译：本发明提供了一种电流控制半导体元件，其中消除了感测比对温度分布的依赖性，并且可以提高使用感测MOSFET的电流检测的精度，并提供使用电流控制半导体元件的控制装置。电流控制半导体元件1包括驱动电流的主MOSFET 7和并联连接到主MOSFET的感测MOSFET 8，并且检测从主MOSFET的电流分流的电流。主MOSFET使用具有多个通道并排列成一排的多指MOSFET形成。当多指MOSFET 7的中心与距离多指MOSFET 7的中心最远的通道之间的距离由L表示时，位于最靠近距离为（L / （√3））从多指MOSFET的中心用作感测MOSFET 8的通道。

6. 发明授权

US08421441B2 Current-controlled semiconductor device and control unit using the same 有权
标题翻译：电流控制半导体器件和使用其的控制单元
公开(公告)号：US08421441B2
公开(公告)日：2013-04-16
申请号：US12868236
申请日：2010-08-25
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G01R19/00
CPC分类号： G01R19/0092 , H03K17/0822
摘要： A current-controlled semiconductor device is provided which corrects fluctuations of both gain and offset of a current detection circuit to thereby enable high-accuracy current detection within a single-chip IC. The current-controlled semiconductor device is provided on the same semiconductor chip with a MOSFET, two constant current sources, and a current detection circuit which detects a current of the MOSFET and currents of the constant current sources. Further, the constant current sources are equipped with an external connecting terminal for measuring their current values. A correction measured-value holding register holds therein the current values of the constant current sources, which have been measured from outside.
摘要翻译：提供一种电流控制半导体器件，其校正电流检测电路的增益和偏移的波动，从而使得能够在单芯片IC内进行高精度电流检测。电流控制半导体器件设置在具有MOSFET，两个恒定电流源的同一半导体芯片上，以及检测MOSFET的电流和恒流源的电流的电流检测电路。此外，恒流源配备有用于测量其电流值的外部连接端子。校正测量值保持寄存器保持从外部测量的恒流源的当前值。

7. 发明申请

US20130057245A1 Current Regulator 审中-公开
标题翻译：电流调节器
公开(公告)号：US20130057245A1
公开(公告)日：2013-03-07
申请号：US13557793
申请日：2012-07-25
申请人： Teppei HIROTSU , Nobuyasu Kanekawa , Ryosuke Ishida , Tsutomu Yamada , Chihiro Sato
发明人： Teppei HIROTSU , Nobuyasu Kanekawa , Ryosuke Ishida , Tsutomu Yamada , Chihiro Sato
IPC分类号： G05F3/02
CPC分类号： H02M7/53803 , H02M3/1588 , H02M7/5395 , H02M2001/0009 , Y02B70/1466
摘要： A current regulator has a current regulating semiconductor device and a microcontroller which outputs a PWM pulse for driving a load to the current regulating semiconductor device and receives outputs of a high-side current detection circuit and a low-side current detection circuit from the current regulating semiconductor device. An output mixer of the current regulating semiconductor device switches, in synchronization with the PWM pulse, between the output of the high-side current detection circuit and the output of the low-side current detection circuit on one signal line to output the output to the microcontroller.
摘要翻译：电流调节器具有电流调节半导体器件和微控制器，其输出用于将负载驱动到电流调节半导体器件的PWM脉冲，并且从电流调节器接收高侧电流检测电路和低侧电流检测电路的输出半导体器件。电流调节半导体装置的输出混频器与PWM脉冲同步地在高边电流检测电路的输出和低端电流检测电路的输出之间切换，以将输出输出到微控制器

8. 发明授权

US09146567B2 Current control device 有权
标题翻译：电流控制装置
公开(公告)号：US09146567B2
公开(公告)日：2015-09-29
申请号：US13985627
申请日：2012-02-21
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
IPC分类号： H02M3/157 , G05F1/10 , H02P29/02 , H02M7/538 , H01F7/18 , H02M1/32
CPC分类号： G05F1/10 , H01F2007/1888 , H02M1/32 , H02M7/53803 , H02P29/0241 , H02P29/0243 , H02P29/032
摘要： A current control device capable of performing widely applicable failure detection without a motor rotation speed sensor is provided. A current control semiconductor element includes, on a same semiconductor chip, a transistor that drives load, a current detection circuit that detects current of the load, a compensator that calculates an on-duty of the transistor from a current command value and a current value output from the current detection circuit, and a PWM timer that generates a pulse turning on the transistor on the basis of the on-duty. A microcontroller sends the current command value to the current control semiconductor element, receives the current value output from the current detection circuit and the on-duty output from the compensator from the current control semiconductor element, and detects failure of the current control semiconductor element on the basis of the received current value and on-duty.
摘要翻译：提供一种能够在没有马达转速传感器的情况下执行广泛应用的故障检测的电流控制装置。电流控制半导体元件在相同的半导体芯片上包括驱动负载的晶体管，检测负载电流的电流检测电路，从电流指令值和电流值计算晶体管的占空比的补偿器来自电流检测电路的输出;以及PWM定时器，其基于占空比产生导通晶体管的脉冲。微控制器将电流指令值发送到电流控制半导体元件，从电流控制半导体元件接收从电流检测电路输出的电流值和来自补偿器的占空比输出，并检测电流控制半导体元件的故障所接受的现值和值班的依据。

9. 发明申请

US20130320948A1 Current Control Device 有权
标题翻译：电流控制装置
公开(公告)号：US20130320948A1
公开(公告)日：2013-12-05
申请号：US13985627
申请日：2012-02-21
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Ryosuke Ishida
IPC分类号： G05F1/10
CPC分类号： G05F1/10 , H01F2007/1888 , H02M1/32 , H02M7/53803 , H02P29/0241 , H02P29/0243 , H02P29/032
摘要： A current control device capable of performing widely applicable failure detection without a motor rotation speed sensor is provided. A current control semiconductor element includes, on a same semiconductor chip, a transistor that drives load, a current detection circuit that detects current of the load, a compensator that calculates an on-duty of the transistor from a current command value and a current value output from the current detection circuit, and a PWM timer that generates a pulse turning on the transistor on the basis of the on-duty. A microcontroller sends the current command value to the current control semiconductor element, receives the current value output from the current detection circuit and the on-duty output from the compensator from the current control semiconductor element, and detects failure of the current control semiconductor element on the basis of the received current value and on-duty.
摘要翻译：提供一种能够在没有马达转速传感器的情况下执行广泛应用的故障检测的电流控制装置。电流控制半导体元件在相同的半导体芯片上包括驱动负载的晶体管，检测负载电流的电流检测电路，从电流指令值和电流值计算晶体管的占空比的补偿器来自电流检测电路的输出;以及PWM定时器，其基于占空比产生导通晶体管的脉冲。微控制器将电流指令值发送到电流控制半导体元件，从电流控制半导体元件接收从电流检测电路输出的电流值和来自补偿器的占空比输出，并检测电流控制半导体元件的故障所接受的现值和值班的依据。

10. 发明授权

US09323595B2 Microcontroller, control device and determination method 有权
标题翻译：微控制器，控制装置及测定方法
公开(公告)号：US09323595B2
公开(公告)日：2016-04-26
申请号：US13555123
申请日：2012-07-21
申请人： Hiromichi Yamada , Teruaki Sakata , Nobuyasu Kanekawa , Yuichi Ishiguro , Takashi Yasumasu , Kazuyoshi Fukuda , Kesami Hagiwara
发明人： Hiromichi Yamada , Teruaki Sakata , Nobuyasu Kanekawa , Yuichi Ishiguro , Takashi Yasumasu , Kazuyoshi Fukuda , Kesami Hagiwara
IPC分类号： G05B19/29 , G06F11/07
CPC分类号： G06F11/0754 , G06F11/0739 , G06F13/00 , Y02D10/14
摘要： A microcontroller includes a central processing unit, a PWM signal generation unit which generates a PWM signal according to a generation condition of a PWM signal set by the central processing unit, and a diagnostic unit which inputs the generated PWM signal therein and detects a pulse period and a pulse width, based on the input signal and which determines whether the detected pulse period and pulse width respectively coincide with a pulse period and a pulse width corresponding to the generation condition.
摘要翻译：微控制器包括中央处理单元，根据由中央处理单元设置的PWM信号的生成条件产生PWM信号的PWM信号生成单元，以及在其中输入生成的PWM信号并检测脉冲周期的诊断单元以及基于输入信号的脉冲宽度，并且确定检测到的脉冲周期和脉冲宽度是否与脉冲周期和对应于生成条件的脉冲宽度一致。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式