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1. 发明授权

US09170587B2 Current control semiconductor element and control device using the same 有权
标题翻译：电流控制半导体元件及使用其的控制装置
公开(公告)号：US09170587B2
公开(公告)日：2015-10-27
申请号：US13818107
申请日：2011-08-01
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G05F1/46 , G05F1/10 , H02P3/22 , H02P6/24
CPC分类号： G05F1/10 , H02P3/22 , H02P6/24
摘要： This invention provides a current control semiconductor element that can detect a current with high accuracy in a single IC chip by dynamically correcting changes in a gain a and an offset b, and a control device that uses the current control semiconductor element, the current control semiconductor element has a transistor 4, a current-to-voltage conversion circuit 22 and an AD converter 23 on the same semiconductor chip. A reference current generation circuit 6 superimposes a current pulse Ic on a current of a load 2 and changes a voltage digital value to be output from the AD converter. A gain/offset corrector 8 executes signal processing on change in the voltage digital value caused by the reference current generation circuit 6 to dynamically acquire the gain a and the offset b that are used in an equation that indicates a linear relationship between the voltage digital value output from the AD converter 23 and the current digital value of the load. A current digital value calculator 12 uses the gain and the offset acquired by the gain/offset corrector 8 to correct the voltage value output from the AD converter.
摘要翻译：本发明提供了一种电流控制半导体元件，其可以通过动态地校正增益a和偏移b的变化，以及使用电流控制半导体元件的控制装置，电流控制半导体，可以在单个IC芯片中以高精度检测电流元件在相同的半导体芯片上具有晶体管4，电流 - 电压转换电路22和AD转换器23。参考电流产生电路6将电流脉冲Ic叠加在负载2的电流上，并改变要从AD转换器输出的电压数字值。增益/偏移校正器8对由参考电流产生电路6引起的电压数字值的变化执行信号处理，以动态地获取在表示电压数字值之间的线性关系的方程式中使用的增益a和偏移量b AD转换器23的输出和负载的当前数字值。当前数字值计算器12使用由增益/偏移校正器8获取的增益和偏移来校正从AD转换器输出的电压值。

2. 发明申请

US20130147453A1 Current Control Semiconductor Element and Control Device Using the Same 有权
标题翻译：电流控制半导体元件及其使用方法
公开(公告)号：US20130147453A1
公开(公告)日：2013-06-13
申请号：US13818107
申请日：2011-08-01
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G05F1/10
CPC分类号： G05F1/10 , H02P3/22 , H02P6/24
摘要： This invention provides a current control semiconductor element that can detect a current with high accuracy in a single IC chip by dynamically correcting changes in a gain a and an offset b, and a control device that uses the current control semiconductor element.The current control semiconductor element has a transistor 4, a current-to-voltage conversion circuit 22 and an AD converter 23 on the same semiconductor chip. A reference current generation circuit 6 superimposes a current pulse Ic on a current of a load 2 and changes a voltage digital value to be output from the AD converter. A gain/offset corrector 8 executes signal processing on change in the voltage digital value caused by the reference current generation circuit 6 to dynamically acquire the gain a and the offset b that are used in an equation that indicates a linear relationship between the voltage digital value output from the AD converter 23 and the current digital value of the load. A current digital value calculator 12 uses the gain and the offset acquired by the gain/offset corrector 8 to correct the voltage value output from the AD converter.
摘要翻译：本发明提供一种电流控制半导体元件，其通过动态地校正增益a和偏移量b的变化，以及使用电流控制半导体元件的控制装置，可以在单个IC芯片中以高精度检测电流。电流控制半导体元件在相同的半导体芯片上具有晶体管4，电流 - 电压转换电路22和AD转换器23。参考电流产生电路6将电流脉冲Ic叠加在负载2的电流上，并改变要从AD转换器输出的电压数字值。增益/偏移校正器8对由参考电流产生电路6引起的电压数字值的变化执行信号处理，以动态地获取在表示电压数字值之间的线性关系的方程式中使用的增益a和偏移量b AD转换器23的输出和负载的当前数字值。当前数字值计算器12使用由增益/偏移校正器8获取的增益和偏移来校正从AD转换器输出的电压值。

3. 发明申请

US20110101959A1 CURRENT-CONTROLLED SEMICONDUCTOR DEVICE AND CONTROL UNIT USING THE SAME 有权
标题翻译：电流控制的半导体器件和使用它的控制单元
公开(公告)号：US20110101959A1
公开(公告)日：2011-05-05
申请号：US12868236
申请日：2010-08-25
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G01R19/00
CPC分类号： G01R19/0092 , H03K17/0822
摘要： The present invention aims to provide a current-controlled semiconductor device which corrects fluctuations of both gain and offset of a current detection circuit to thereby enable high-accuracy current detection within a single-chip IC, and a control unit using the same.The current-controlled semiconductor device 100 is provided on the same semiconductor chip with a MOSFET 110H, two constant current sources, and a current detection circuit 120 which detects a current of the MOSFET and currents of the constant current sources. Further, the constant current sources are equipped with an external connecting terminal T5 for measuring their current values. A correction measured-value holding register 145 holds therein the current values of the constant current sources, which have been measured from outside.
摘要翻译：本发明的目的在于提供一种校正电流检测电路的增益和偏移波动的电流控制半导体器件，从而能够实现单芯片IC内的高精度电流检测，以及使用该半导体装置的控制单元。电流控制半导体器件100设置在具有MOSFET 110H，两个恒定电流源的同一半导体芯片上，以及电流检测电路120，其检测MOSFET的电流和恒流源的电流。此外，恒流源配备有用于测量其电流值的外部连接端子T5。校正测量值保持寄存器145在其中保存已经从外部测量的恒定电流源的当前值。

4. 发明申请

US20130105913A1 Current Control Semiconductor Element and Control Device Using the Same 有权
标题翻译：电流控制半导体元件及其使用方法
公开(公告)号：US20130105913A1
公开(公告)日：2013-05-02
申请号：US13807278
申请日：2011-06-02
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L27/0211 , H01L27/0266 , H01L29/41758 , H01L29/4238 , H03K17/145
摘要： This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor element 1 includes a main MOSFET 7 that drives a current and a sense MOSFET 8 that is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the center of the multi-finger MOSFET 7 and a channel located farthest from the center of the multi-finger MOSFET 7 is indicated by L, a channel that is located closest to a position distant by a distance of (L/(√3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET 8.
摘要翻译：本发明提供了一种电流控制半导体元件，其中消除了感测比对温度分布的依赖性，并且可以提高使用感测MOSFET的电流检测的精度，并提供使用电流控制半导体元件的控制装置。电流控制半导体元件1包括驱动电流的主MOSFET 7和并联连接到主MOSFET的感测MOSFET 8，并且检测从主MOSFET的电流分流的电流。主MOSFET使用具有多个通道并排列成一排的多指MOSFET形成。当多指MOSFET 7的中心与距离多指MOSFET 7的中心最远的通道之间的距离由L表示时，位于最靠近距离为（L / （√3））从多指MOSFET的中心用作感测MOSFET 8的通道。

5. 发明授权

US08653601B2 Current control semiconductor element and control device using the same 有权
标题翻译：电流控制半导体元件及使用其的控制装置
公开(公告)号：US08653601B2
公开(公告)日：2014-02-18
申请号：US13807278
申请日：2011-06-02
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： H01L21/8234 , H01L29/76 , H02M3/24
CPC分类号： H01L27/088 , H01L27/0211 , H01L27/0266 , H01L29/41758 , H01L29/4238 , H03K17/145
摘要： This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor element 1 includes a main MOSFET 7 that drives a current and a sense MOSFET 8 that is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the center of the multi-finger MOSFET 7 and a channel located farthest from the center of the multi-finger MOSFET 7 is indicated by L, a channel that is located closest to a position distant by a distance of (L/(√3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET 8.
摘要翻译：本发明提供了一种电流控制半导体元件，其中消除了感测比对温度分布的依赖性，并且可以提高使用感测MOSFET的电流检测的精度，并提供使用电流控制半导体元件的控制装置。电流控制半导体元件1包括驱动电流的主MOSFET 7和并联连接到主MOSFET的感测MOSFET 8，并且检测从主MOSFET的电流分流的电流。主MOSFET使用具有多个通道并排列成一排的多指MOSFET形成。当多指MOSFET 7的中心与距离多指MOSFET 7的中心最远的通道之间的距离由L表示时，位于最靠近距离为（L / （√3））从多指MOSFET的中心用作感测MOSFET 8的通道。

6. 发明申请

US20100327979A1 Current Detection Apparatus and Control System Using the Same 审中-公开
标题翻译：电流检测装置及其使用的控制系统
公开(公告)号：US20100327979A1
公开(公告)日：2010-12-30
申请号：US12826429
申请日：2010-06-29
申请人： Nobuyasu KANEKAWA , Teppei Hirotsu , Takayuki Hashimoto , Itaru Tanabe
发明人： Nobuyasu KANEKAWA , Teppei Hirotsu , Takayuki Hashimoto , Itaru Tanabe
IPC分类号： H03F3/04
CPC分类号： H03F3/45475 , H03F2200/261 , H03F2203/45528 , H03F2203/45594 , H03F2203/45604
摘要： A highly accurate current detection apparatus is realized in a one-chip LSI. An end of a current detector is connected to an analog power supply (VACC) or a virtual analog ground potential (VAG) of a voltage amplifier and an A/D converter, and a predetermined voltage is supplied between the voltage amplifier and the virtual ground potential (VAG) by a power supply.
摘要翻译：在单片LSI中实现了高精度的电流检测装置。电流检测器的端部连接到电压放大器和A / D转换器的模拟电源（VACC）或虚拟模拟地电位（VAG），并且在电压放大器和虚拟地之间提供预定电压电位（VAG）。

7. 发明授权

US08421441B2 Current-controlled semiconductor device and control unit using the same 有权
标题翻译：电流控制半导体器件和使用其的控制单元
公开(公告)号：US08421441B2
公开(公告)日：2013-04-16
申请号：US12868236
申请日：2010-08-25
申请人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
发明人： Teppei Hirotsu , Nobuyasu Kanekawa , Itaru Tanabe
IPC分类号： G01R19/00
CPC分类号： G01R19/0092 , H03K17/0822
摘要： A current-controlled semiconductor device is provided which corrects fluctuations of both gain and offset of a current detection circuit to thereby enable high-accuracy current detection within a single-chip IC. The current-controlled semiconductor device is provided on the same semiconductor chip with a MOSFET, two constant current sources, and a current detection circuit which detects a current of the MOSFET and currents of the constant current sources. Further, the constant current sources are equipped with an external connecting terminal for measuring their current values. A correction measured-value holding register holds therein the current values of the constant current sources, which have been measured from outside.
摘要翻译：提供一种电流控制半导体器件，其校正电流检测电路的增益和偏移的波动，从而使得能够在单芯片IC内进行高精度电流检测。电流控制半导体器件设置在具有MOSFET，两个恒定电流源的同一半导体芯片上，以及检测MOSFET的电流和恒流源的电流的电流检测电路。此外，恒流源配备有用于测量其电流值的外部连接端子。校正测量值保持寄存器保持从外部测量的恒流源的当前值。

8. 发明授权

US07269492B2 Control system 有权
标题翻译：控制系统
公开(公告)号：US07269492B2
公开(公告)日：2007-09-11
申请号：US10857906
申请日：2004-06-02
申请人： Itaru Tanabe
发明人： Itaru Tanabe
IPC分类号： G06F19/00
CPC分类号： G06F11/0796 , G06F11/0736 , G06F11/0739 , G06F11/1441
摘要： To offer a control system that is not only equipped with a high fail-safe function but also capable of avoiding erroneous failure detection.The CPU 110 outputs a drive signal DC for driving the load L according to the input signals from sensors S1 and S2 by means of the load drive element 120. The monitor IC 150 detects abnormal condition of equipment and outputs the first reset signal RES 1 for resetting the CPU 110 and also outputs the second reset signal RES2 when the first reset signal RES1 has been outputted for a specified number of times. The compulsory turn-off circuit 160 stops the output to the load L according to the second reset signal RES2 outputted from the monitor IC 150.
摘要翻译：提供不仅具有高故障保护功能，而且能够避免错误故障检测的控制系统。根据来自传感器S1和S2的输入信号，CPU 110通过负载驱动元件120输出用于驱动负载L的驱动信号DC。监视器IC150检测设备的异常状况，并输出用于复位CPU110的第一复位信号RES 1，并且当第一复位信号RES 1输出指定次数时也输出第二复位信号RES 2。强制关断电路160根据从监视器IC 150输出的第二复位信号RES 2将输出停止到负载L。

9. 发明申请

US20060171662A1 Control apparatus and method of operating same 审中-公开
标题翻译：控制装置及其运行方法
公开(公告)号：US20060171662A1
公开(公告)日：2006-08-03
申请号：US11205037
申请日：2005-08-17
申请人： Yasuhiko Nagata , Itaru Tanabe
发明人： Yasuhiko Nagata , Itaru Tanabe
IPC分类号： H04N7/00
CPC分类号： G06F11/0796 , G06F1/206 , Y02D10/16
摘要： In a conventional control apparatus, the control apparatus cannot be correctly set into a fail safe mode upon failure of a temperature sensor itself mounted in the control apparatus. Also, when the control apparatus has a plurality of elements having a concern of heat generation, a plurality of temperature sensors are required corresponding to the elements having a concern of heat generation. The requirement of the plurality of temperature sensors causes an increase in the cost and mounting area. The present invention measures an instructed current value from a CPU to an element mounted in a control apparatus and having a concern of heat generation (typically, a current control element), calculates power consumption from the measured current value and a monitored source voltage, and predicts a temperature rise of the control apparatus by multiplying the power consumption by a thermal resistance parameter of the control apparatus. The control apparatus can be set into a fail safe mode for protection when it is estimated that the control apparatus could be heated beyond an upper limit of a guaranteed operation temperature range defined therefore.
摘要翻译：在传统的控制装置中，当安装在控制装置中的温度传感器本身故障时，控制装置不能正确地设置为故障安全模式。此外，当控制装置具有关于发热的多个元件时，需要与具有发热关注的元件相对应的多个温度传感器。多个温度传感器的要求导致成本和安装面积的增加。本发明测量从CPU到安装在控制装置中的元件的指示的电流值，并且具有发热的关注（通常为电流控制元件），根据测量的电流值和监视的源电压来计算功耗，以及通过将功耗乘以控制装置的热阻参数来预测控制装置的温度上升。当估计控制装置可以被加热超过由此限定的保证工作温度范围的上限时，控制装置可以被设置为用于保护的故障安全模式。

10. 发明授权

US07329967B2 Electronic control unit for car 失效
标题翻译：汽车电子控制单元
公开(公告)号：US07329967B2
公开(公告)日：2008-02-12
申请号：US10729907
申请日：2003-12-09
申请人： Kazunori Nozawa , Itaru Tanabe
发明人： Kazunori Nozawa , Itaru Tanabe
IPC分类号： H02H7/18
CPC分类号： H02J7/0032 , B60R16/03
摘要： A control unit stops the supply of constant voltage into a vehicle electronic control unit in an abnormal state even though the ignition is off. A delay circuit for delaying an ignition OFF signal is installed outside the central processing unit. By controlling the power source to OFF by an output signal of the delay circuit or by the delay circuit for delaying by a longer time than that of a shut-off signal from the CPU due to the ignition OFF signal, and by the AND circuit of the output signal of the delay circuit and the shut-off signal from the CPU, and by an output signal of the AND circuit which is changed from high to low, the power supply from the power source IC is stopped.
摘要翻译：即使点火关闭，控制单元在异常状态下停止向车辆电子控制单元供给恒定电压。用于延迟点火OFF信号的延迟电路安装在中央处理单元的外部。通过由延迟电路的输出信号或延迟电路将电源控制为关闭的延迟时间比由于点火OFF信号的来自CPU的截止信号延迟更长的时间，以及由AND电路延迟电路的输出信号和来自CPU的关断信号，以及AND电路的输出信号从高电平变为低电平，停止从电源IC的电源。

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