会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • METHOD FOR MANUFACTURING PERPENDICULAR MAGNETIC RECORDING MEDIUM AND PERPENDICULAR MAGNETIC RECORDING MEDIUM
    • 制造全能磁记录介质和全磁记录介质的方法
    • US20110111262A1
    • 2011-05-12
    • US12934975
    • 2009-03-25
    • Teiichiro UmezawaMasafumi IshiyamaTokichiro SatoKenji AyamaTakahiro OnoueJunichi Horikawa
    • Teiichiro UmezawaMasafumi IshiyamaTokichiro SatoKenji AyamaTakahiro OnoueJunichi Horikawa
    • G11B5/66B05D5/12G11B5/667G11B5/72G11B5/85G11B5/851
    • G11B5/65G11B5/84
    • An object of the present invention is to provide a method of manufacturing a perpendicular magnetic recording medium (100) in which both of a coercive force Hc and reliability can be achieved at a higher level even with heating at the time of forming a medium protective layer (126) and to provide the perpendicular magnetic recording medium (100). Thus, in a typical structure of the present invention, in the method of manufacturing the perpendicular magnetic recording medium (100) including at least a magnetic recording layer (122b), which is a ferromagnetic layer of a granular structure in which a non-magnetic grain boundary part is formed between crystal grains each grown in a columnar shape, and a medium protective layer (126) with carbon hydride as a main component in this order on a disk base (110), the method includes a magnetic recording layer forming step of forming the magnetic recording layer (122b) so that the grain boundary part contains oxides of a plurality of types and a medium protective layer forming step of forming the medium protective layer (126) in a state where the disk base (110) having the magnetic recording layer (122b) formed thereon is heated at 160 to 200 degrees Celsius.
    • 本发明的目的是提供一种制造垂直磁记录介质(100)的方法,其中即使在形成介质保护层时加热也可以在更高的水平上实现矫顽力Hc和可靠性 (126)并提供垂直磁记录介质(100)。 因此,在本发明的典型结构中,在制造至少包括磁记录层(122b)的垂直磁记录介质(100)的制造方法中,所述磁记录层是粒状结构的铁磁层,其中非磁性 在圆盘基体(110)上依次形成以圆柱状生长的晶粒和碳氢化合物作为主要成分的介质保护层(126)之间的晶界部分,该方法包括磁记录层形成步骤 形成磁记录层(122b),使得晶界部分包含多种类型的氧化物和形成介质保护层(126)的介质保护层形成步骤,所述介质保护层形成步骤处于具有 在其上形成的磁记录层(122b)在160至200摄氏度下被加热。
    • 2. 发明授权
    • Method of manufacturing perpendicular magnetic recording medium and perpendicular magnetic recording medium
    • 制造垂直磁记录介质和垂直磁记录介质的方法
    • US08623528B2
    • 2014-01-07
    • US12934975
    • 2009-03-25
    • Teiichiro UmezawaMasafumi IshiyamaTokichiro SatoKenji AyamaTakahiro OnoueJunichi Horikawa
    • Teiichiro UmezawaMasafumi IshiyamaTokichiro SatoKenji AyamaTakahiro OnoueJunichi Horikawa
    • G11B5/66
    • G11B5/65G11B5/84
    • An object of the present invention is to provide a method of manufacturing a perpendicular magnetic recording medium (100) in which both of a coercive force Hc and reliability can be achieved at a higher level even with heating at the time of forming a medium protective layer (126) and to provide the perpendicular magnetic recording medium (100). Thus, in a typical structure of the present invention, in the method of manufacturing the perpendicular magnetic recording medium (100) including at least a magnetic recording layer (122b), which is a ferromagnetic layer of a granular structure in which a non-magnetic grain boundary part is formed between crystal grains each grown in a columnar shape, and a medium protective layer (126) with carbon hydride as a main component in this order on a disk base (110), the method includes a magnetic recording layer forming step of forming the magnetic recording layer (122b) so that the grain boundary part contains oxides of a plurality of types and a medium protective layer forming step of forming the medium protective layer (126) in a state where the disk base (110) having the magnetic recording layer (122b) formed thereon is heated at 160 to 200 degrees Celsius.
    • 本发明的目的是提供一种制造垂直磁记录介质(100)的方法,其中即使在形成介质保护层时加热也可以在更高的水平上实现矫顽力Hc和可靠性 (126)并提供垂直磁记录介质(100)。 因此,在本发明的典型结构中,在制造至少包括磁记录层(122b)的垂直磁记录介质(100)的制造方法中,所述磁记录层是粒状结构的铁磁层,其中非磁性 在圆盘基体(110)上依次形成以圆柱状生长的晶粒和碳氢化合物作为主要成分的介质保护层(126)之间的晶界部分,该方法包括磁记录层形成步骤 形成磁记录层(122b),使得晶界部分包含多种类型的氧化物和形成介质保护层(126)的介质保护层形成步骤,所述介质保护层形成步骤处于具有 在其上形成的磁记录层(122b)在160至200摄氏度下被加热。
    • 5. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US08142916B2
    • 2012-03-27
    • US12594043
    • 2008-03-28
    • Teiichiro UmezawaMasafumi IshiyamaKenji AyamaTokichiro Sato
    • Teiichiro UmezawaMasafumi IshiyamaKenji AyamaTokichiro Sato
    • G11B5/66
    • G11B5/7325G11B5/66
    • Provided is a magnetic recording medium which maintains high S/N ratio and coercive force (Hc) and has high recording density, even with fine magnetic particles, by further improving crystal orientation of a magnetic recording layer. The magnetic recording medium is provided with an orientation control layer (16), a nonmagnetic under layer (18), and a magnetic recording layer (22) on a substrate. The orientation control layer (16) has an fcc structure and a (111) plane parallel to the substrate. The under layer (18) has an hcp structure and a (0001) plane parallel to the substrate. An atomic distance of the (111) plane of the orientation control layer (16) is −0.2 Å to +0.15 Å to a lattice spacing of the under layer (18).
    • 提供了通过进一步改善磁记录层的晶体取向,即使使用细小的磁性颗粒,仍然保持高S / N比和矫顽力(Hc)并且具有高记录密度的磁记录介质。 磁记录介质在基板上设置有取向控制层(16),非磁性底层(18)和磁记录层(22)。 取向控制层(16)具有fcc结构和平行于基板的(111)平面。 底层(18)具有hcp结构和平行于衬底的(0001)平面。 取向控制层(16)的(111)面的原子距离相对于下层(18)的晶格间距为-0.2到+0.15。
    • 10. 发明申请
    • MAGNETIC RECORDING MEDIUM
    • 磁记录介质
    • US20100119878A1
    • 2010-05-13
    • US12594043
    • 2008-03-28
    • Teiichiro UmezawaMasafumi IshiyamaKenji AyamaTokichiro Sato
    • Teiichiro UmezawaMasafumi IshiyamaKenji AyamaTokichiro Sato
    • G11B5/706
    • G11B5/7325G11B5/66
    • Provided is a magnetic recording medium which maintains high S/N ratio and coercive force (Hc) and has high recording density, even with fine magnetic particles, by further improving crystal orientation of a magnetic recording layer. The magnetic recording medium is provided with an orientation control layer (16), a nonmagnetic under layer (18), and a magnetic recording layer (22) on a substrate. The orientation control layer (16) has an fcc structure and a (111) plane parallel to the substrate. The under layer (18) has an hcp structure and a (0001) plane parallel to the substrate. An atomic distance of the (111) plane of the orientation control layer (16) is −0.2 Å to +0.15 Å to a lattice spacing of the under layer (18).
    • 提供了通过进一步改善磁记录层的晶体取向,即使使用细小的磁性颗粒,仍然保持高S / N比和矫顽力(Hc)并且具有高记录密度的磁记录介质。 磁记录介质在基板上设置有取向控制层(16),非磁性底层(18)和磁记录层(22)。 取向控制层(16)具有fcc结构和平行于基板的(111)平面。 底层(18)具有hcp结构和平行于衬底的(0001)平面。 取向控制层(16)的(111)面的原子距离相对于下层(18)的晶格间距为-0.2到+0.15。