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1. 发明授权

US06300558B1 Lattice matched solar cell and method for manufacturing the same 有权
标题翻译：晶格匹配的太阳能电池及其制造方法
公开(公告)号：US06300558B1
公开(公告)日：2001-10-09
申请号：US09553495
申请日：2000-04-20
申请人： Tatsuya Takamoto , Hiroshi Kurita , Takaaki Agui , Eiji Ikeda
发明人： Tatsuya Takamoto , Hiroshi Kurita , Takaaki Agui , Eiji Ikeda
IPC分类号： H01L31068
CPC分类号： H01L31/0735 , Y02E10/544 , Y02P70/521
摘要： A solar cell comprises at least a germanium (Ge) substrate, buffer layers formed on the germanium substrate, a first InxGa1-xAs layer of first conductivity type formed on the buffer layers, and a second InxGa1-xAs layer of second conductivity type formed on the first InxGa1-xAs layer to form pn junction. Because the composition x of In contained in the first InxGa1-xAs layer and the second InxGa1-xAs layer is in a range of 0.005≦x≦0.015, the inexpensive and high conversion efficiency solar cell can be achieved.
摘要翻译：太阳能电池至少包括锗（Ge）衬底，形成在锗衬底上的缓冲层，形成在缓冲层上的第一导电类型的第一In x Ga 1-x As层和形成在第二导电类型上的第二导电类型的第二In x Ga 1-x As层第一个In x Ga 1-x As层形成pn结。因为包含在第一In x Ga 1-x As层和第二In x Ga 1-x As层中的In的组成x在0.005 <= x <= 0.015的范围内，所以可以实现廉价且高转换效率的太阳能电池。

2. 发明授权

US07488890B2 Compound solar battery and manufacturing method thereof 有权
标题翻译：复合太阳能电池及其制造方法
公开(公告)号：US07488890B2
公开(公告)日：2009-02-10
申请号：US10805419
申请日：2004-03-22
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1892 , H01L31/03046 , H01L31/0687 , H01L31/078 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.
摘要翻译：在GaAs衬底的表面上，通过外延生长形成作为顶部电池的层。在顶部单元上，形成作为底部单元的层。此后，在底部电池的表面上形成背面电极。此后，通过蜡将玻璃板粘附到背面电极。然后，将由玻璃板支撑的GaAs衬底浸入碱溶液中，从而去除GaAs衬底。此后，在顶部电池上形成表面电极。最后，玻璃板与背面电极分离。以这种方式，可以获得提高转换成电能的效率的复合太阳能电池。

3. 发明申请

US20060180198A1 Solar cell, solar cell string and method of manufacturing solar cell string 审中-公开
标题翻译：太阳能电池，太阳能电池串和制造太阳能电池串的方法
公开(公告)号：US20060180198A1
公开(公告)日：2006-08-17
申请号：US11351253
申请日：2006-02-10
申请人： Tatsuya Takamoto , Takaaki Agui , Hidetoshi Washio , Naoki Takahashi
发明人： Tatsuya Takamoto , Takaaki Agui , Hidetoshi Washio , Naoki Takahashi
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/02008 , H01L31/0504 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a first compound semiconductor stacked body with an n-type compound semiconductor layer and a p-type compound semiconductor layer in contact with each other, the first compound semiconductor stacked body has a first electrode of a first polarity and a second electrode of a second polarity, and surfaces of the first electrode and the second electrode are exposed to the same side. A solar cell string using the solar cells and a method of manufacturing the solar cell string are further provided.
摘要翻译：太阳能电池包括具有相互接触的n型化合物半导体层和p型化合物半导体层的第一化合物半导体层叠体，第一化合物半导体层叠体具有第一极性的第一电极和第二电极第二极性的第一电极和第二电极的表面暴露于同一侧。还提供了使用太阳能电池的太阳能电池串和制造太阳能电池串的方法。

4. 发明申请

US20060054900A1 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 审中-公开
公开(公告)号：US20060054900A1
公开(公告)日：2006-03-16
申请号：US11220908
申请日：2005-09-08
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L33/00
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.

5. 发明申请

US20110290312A1 COMPOUND SEMICONDUCTOR SOLAR BATTERY AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SOLAR BATTERY 审中-公开
标题翻译：化合物半导体太阳能电池及制造化合物半导体太阳能电池的方法
公开(公告)号：US20110290312A1
公开(公告)日：2011-12-01
申请号：US13148270
申请日：2010-02-02
申请人： Takaaki Agui , Tatsuya Takamoto
发明人： Takaaki Agui , Tatsuya Takamoto
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/06875 , H01L31/0693 , H01L31/0735 , H01L31/1844 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor solar battery including a first compound semiconductor photoelectric conversion cell, a second compound semiconductor photoelectric conversion cell provided on the first compound semiconductor photoelectric conversion cell, and a compound semiconductor buffer layer provided between the first compound semiconductor photoelectric conversion cell and the second compound semiconductor photoelectric conversion cell, the first compound semiconductor photoelectric conversion cell and the compound semiconductor buffer layer being provided adjacent to each other, and a ratio of a difference in lattice constant between the first compound semiconductor photoelectric conversion cell and a compound semiconductor layer provided in a position closest to the first compound semiconductor photoelectric conversion cell among compound semiconductor layers constituting the compound semiconductor buffer layer being not less than 0.15% and not more than 0.74%, and a method for manufacturing the same are provided.
摘要翻译：一种复合半导体太阳能电池，包括第一化合物半导体光电转换单元，设置在第一化合物半导体光电转换单元上的第二化合物半导体光电转换单元和设置在第一化合物半导体光电转换单元与第二化合物之间的化合物半导体缓冲层半导体光电转换单元，第一化合物半导体光电转换单元和化合物半导体缓冲层彼此相邻地设置，并且第一化合物半导体光电转换单元和设置在第一化合物半导体光电转换单元中的化合物半导体层之间的晶格常数差构成化合物半导体缓冲层的化合物半导体层中最靠近第一化合物半导体光电转换元件的位置为0.15％以上且0.74％以下的制造方法，以及制造方法提供了相同的操作。

6. 发明授权

US5916375A Method of producing photoelectric conversion device 失效
标题翻译：光电转换装置的制造方法
公开(公告)号：US5916375A
公开(公告)日：1999-06-29
申请号：US906541
申请日：1998-04-06
申请人： Takaaki Agui , Tatsuya Takamoto
发明人： Takaaki Agui , Tatsuya Takamoto
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/18 , H01L21/477
CPC分类号： H01L31/073 , H01L31/022466 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： The present invention is directed to a method of manufacturing a photovoltaic cell with high conversion efficiency, wherein a polycrystal CdTe layer with a large grain size can be formed by forming an indium oxide film (20) on a transparent conductive substrate having a transparent conductive film (2) as its surface layer, then forming an n-type CdS layer (3) and a p-type CdTe layer (4) thereon, then attaching cadmium chloride (CdCl.sub.2) on the p-type CdTe layer, and then annealing. The indium oxide film (20) is capable of relaxing strain caused at an interface between the transparent conductive film (2) and the n-type CdS layer (3), so that a good CdS/CdTe junction interface can be formed. The indium oxide film (20) can be formed by forming an indium film on the transparent conductive substrate and then annealing in oxygen containing atmosphere.
摘要翻译： PCT No.PCT / JP96 / 03428 Sec。 371日期：1998年4月6日 102（e）1998年4月6日PCT PCT 1996年11月22日PCT公布。公开号WO97 / 21252 日期：1997年6月12日本发明涉及一种制造具有高转换效率的光伏电池的方法，其中通过在透明导电基板上形成氧化铟膜（20）可以形成具有大晶粒尺寸的多晶CdTe层具有透明导电膜（2）作为其表面层，然后在其上形成n型CdS层（3）和p型CdTe层（4），然后将氯化镉（CdCl 2）附着在p型CdTe层上，然后退火。氧化铟膜（20）能够缓和在透明导电膜（2）和n型CdS层（3）之间的界面处产生的应变，从而可以形成良好的CdS / CdTe结界面。氧化铟膜（20）可以通过在透明导电性基板上形成铟膜，然后在含氧气氛中退火而形成。

7. 发明申请

US20100279456A1 Compound solar and manufacturing method thereof 审中-公开
标题翻译：复合太阳能及其制造方法
公开(公告)号：US20100279456A1
公开(公告)日：2010-11-04
申请号：US12232294
申请日：2008-09-15
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L31/0248
CPC分类号： H01L31/1892 , H01L31/03046 , H01L31/0687 , H01L31/078 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.
摘要翻译：在GaAs衬底的表面上，通过外延生长形成作为顶部电池的层。在顶部单元上，形成作为底部单元的层。此后，在底部电池的表面上形成背面电极。此后，通过蜡将玻璃板粘附到背面电极。然后，将由玻璃板支撑的GaAs衬底浸入碱溶液中，从而去除GaAs衬底。此后，在顶部电池上形成表面电极。最后，玻璃板与背面电极分离。以这种方式，可以获得提高转换成电能的效率的复合太阳能电池。

8. 发明申请

US20080070388A1 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 有权
标题翻译：复合半导体器件外延生长衬底，半导体器件及其制造方法
公开(公告)号：US20080070388A1
公开(公告)日：2008-03-20
申请号：US11976863
申请日：2007-10-29
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L21/20
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.
摘要翻译：一种化合物半导体器件外延生长衬底，其中半导体衬底，由与衬底的材料不同的材料制成的衬底保护层，可能使半导体衬底分离的中间层和可能的化合物半导体器件层，以及通过外延生长形成的化合物半导体器件层依次层叠; 以及使用通过从该化合物半导体器件外延生长衬底分离半导体衬底，衬底保护层和中间层而获得的化合物半导体器件层的半导体器件; 以及这些的制造方法。

9. 发明授权

US07635638B2 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 有权
标题翻译：复合半导体器件外延生长衬底，半导体器件及其制造方法
公开(公告)号：US07635638B2
公开(公告)日：2009-12-22
申请号：US11976863
申请日：2007-10-29
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L21/46
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.
摘要翻译：一种化合物半导体器件外延生长衬底，其中半导体衬底，由与衬底的材料不同的材料制成的衬底保护层，可能使半导体衬底分离的中间层和可能的化合物半导体器件层，以及通过外延生长形成的化合物半导体器件层依次层叠; 以及使用通过从该化合物半导体器件外延生长衬底分离半导体衬底，衬底保护层和中间层而获得的化合物半导体器件层的半导体器件; 以及这些的制造方法。

10. 发明申请

US20120247547A1 MULTIJUNCTION COMPOUND SEMICONDUCTOR SOLAR CELL 有权
标题翻译：多功能化合物半导体太阳能电池
公开(公告)号：US20120247547A1
公开(公告)日：2012-10-04
申请号：US13518563
申请日：2010-12-27
申请人： Kazuaki Sasaki , Takaaki Agui
发明人： Kazuaki Sasaki , Takaaki Agui
IPC分类号： H01L31/0725
CPC分类号： H01L31/03046 , H01L31/06875 , H01L31/1844 , Y02E10/544
摘要： Disclosed is a multijunction compound semiconductor solar cell having a buffer layer between a first cell and a second cell. In the buffer layer, a plurality of semiconductor layers is arranged such that lattice constants thereof have larger values in order from the first cell side to the second cell side. Of the plurality of semiconductor layers, two layers having the largest difference in lattice constant among each two adjacent layers are disposed closer to the first cell than the center in the thickness direction of the buffer layer.
摘要翻译：公开了一种在第一单元和第二单元之间具有缓冲层的多结型化合物半导体太阳能电池。在缓冲层中，配置多个半导体层，使得其晶格常数从第一单元侧到第二单元侧的顺序依次较大。在多个半导体层中，在两个相邻层之间具有最大的晶格常数差的两个层比缓冲层的厚度方向上的中心更靠近第一单元。

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