专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5211794A Wafer etching apparatus 失效
标题翻译： WAFER ETCHING APPARATUS
公开(公告)号：US5211794A
公开(公告)日：1993-05-18
申请号：US776787
申请日：1991-10-16
申请人： Tatsuo Enomoto , Michito Sato , Shigeyoshi Nezu
发明人： Tatsuo Enomoto , Michito Sato , Shigeyoshi Nezu
IPC分类号： C23F1/08 , C30B33/00 , H01L21/00 , H01L21/306 , H01L21/68
CPC分类号： H01L21/67086 , C30B33/00
摘要： A wafer etching apparatus for etching wafers provided with an orientation flat, composed of a casing, at least five horizontal, parallel and rotative rollers having annular engagement grooves arranged at regular intervals in the axial direction to receive and support wafers vertically, and a press rod means, wherein the rotative rollers are arranged such that the rollers cooperate to circumscribe the wafers, and that when the orientation flat faces any one of the rollers the rest of the rollers cooperate to hold the wafer so as to prevent the orientation flat from coming in contact with the facing roller.

2. 发明授权

US09050698B2 Manufacturing method of carrier for double-side polishing apparatus, carrier for double-side polishing apparatus, and double-side polishing method of wafer 有权
标题翻译：双面抛光装置的载体的制造方法，双面研磨装置的载体和晶片的双面研磨方法
公开(公告)号：US09050698B2
公开(公告)日：2015-06-09
申请号：US13379482
申请日：2010-06-18
申请人： Taichi Yasuda , Tatsuo Enomoto
发明人： Taichi Yasuda , Tatsuo Enomoto
IPC分类号： B24B37/28
CPC分类号： B24B37/28 , Y10T29/49826
摘要： A manufacturing method of a carrier for a double-side polishing apparatus for polishing surfaces of a wafer, the carrier having: a carrier body arranged between upper and lower turn tables, the carrier body having a holding hole for holding the wafer; and a ring-shaped resin insert arranged along an inner circumference of the holding hole, the resin insert having an inner circumferential surface to be brought into contact with a peripheral portion of the wafer to be held, the method having the steps of attaching, to the holding hole of the carrier body, a base material for the resin insert not having the inner circumferential surface to be brought into contact with the wafer to be held, and performing inner-circumferential-surface-forming processing on the base material for the resin insert to form the inner circumferential surface to be brought into contact with the peripheral portion of the wafer to be held.
摘要翻译：一种用于抛光晶片表面的双面抛光装置的载体的制造方法，所述载体具有：设置在上下转台之间的载体，所述载体具有用于保持所述晶片的保持孔; 以及环形树脂插入件，其沿着保持孔的内周布置，所述树脂插入件具有与要保持的晶片的周边部分接触的内周面，该方法具有以下步骤：承载体的保持孔，不具有与要保持的晶片接触的内周面的树脂插入件的基材，并且对于树脂的基材进行内周面形成处理插入以形成与要保持的晶片的周边部分接触的内周面。

3. 发明申请

US20120100788A1 MANUFACTURING METHOD OF CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS, CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS, AND DOUBLE-SIDE POLISHING METHOD OF WAFER 有权
标题翻译：用于双面抛光装置的载体的制造方法，双面抛光装置的载体和双面抛光方法
公开(公告)号：US20120100788A1
公开(公告)日：2012-04-26
申请号：US13379482
申请日：2010-06-18
申请人： Taichi Yasuda , Tatsuo Enomoto
发明人： Taichi Yasuda , Tatsuo Enomoto
IPC分类号： B24B41/06 , B23P11/00
CPC分类号： B24B37/28 , Y10T29/49826
摘要： A manufacturing method of a carrier for a double-side polishing apparatus for polishing surfaces of a wafer, the carrier having: a carrier body arranged between upper and lower turn tables, the carrier body having a holding hole for holding the wafer; and a ring-shaped resin insert arranged along an inner circumference of the holding hole, the resin insert having an inner circumferential surface to be brought into contact with a peripheral portion of the wafer to be held, the method having the steps of attaching, to the holding hole of the carrier body, a base material for the resin insert not having the inner circumferential surface to be brought into contact with the wafer to be held, and performing inner-circumferential-surface-forming processing on the base material for the resin insert to form the inner circumferential surface to be brought into contact with the peripheral portion of the wafer to be held.
摘要翻译：一种用于抛光晶片表面的双面抛光装置的载体的制造方法，所述载体具有：设置在上下转台之间的载体，所述载体具有用于保持所述晶片的保持孔; 以及环形树脂插入件，其沿着保持孔的内周布置，所述树脂插入件具有与要保持的晶片的周边部分接触的内周面，该方法具有以下步骤：承载体的保持孔，不具有与要保持的晶片接触的内周面的树脂插入件的基材，并且对于树脂的基材进行内周面形成处理插入以形成与要保持的晶片的周边部分接触的内周面。

4. 发明申请

US20080128851A1 Method Of Manufacturing Soi Wafer And Thus-Manufactured Soi Wafer 有权
标题翻译：制造硅晶片和如此制造的硅晶片的方法
公开(公告)号：US20080128851A1
公开(公告)日：2008-06-05
申请号：US11662285
申请日：2005-09-09
申请人： Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
发明人： Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
IPC分类号： H01L29/00 , H01L21/30
CPC分类号： H01L21/76254 , H01L21/3226
摘要： A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ
摘要翻译：一种制造SOI晶片的方法包括接合步骤，薄化和接合退火步骤。假设SiO 2的折射率n 1为1.5，Si的折射率n 2为3.5，氧化硅膜2和SOI层15的光学厚度t OP 在红外波长区域中，作为t OP = N 1×t 1 + n 2×t 2，氧化硅膜2的厚度t 1和SOI层的厚度t 2满足关系并且使得（t 1×n 1）/（t 2×n 2）落在0.2-3范围内。通过在键合退火之前进行的核激光退火在接合退火之后将基底晶片中的氧沉淀形成密度调节到小于1×10 9 / cm 3以上。该结构成功地提供了制造具有薄氧化硅膜和SOI层的SOI晶片的方法，并且不太可能引起翘曲。

5. 发明授权

US07902042B2 Method of manufacturing SOI wafer and thus-manufactured SOI wafer 有权
标题翻译：制造SOI晶片和如此制造的SOI晶片的方法
公开(公告)号：US07902042B2
公开(公告)日：2011-03-08
申请号：US11662285
申请日：2005-09-09
申请人： Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
发明人： Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/3226
摘要： A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ
摘要翻译：一种制造SOI晶片的方法包括接合步骤，薄化和接合退火步骤。假设SiO 2的折射率n1为1.5，Si的折射率n2为3.5，红外波长区域中的氧化硅膜2和SOI层15的光学厚度tOP为tOP = n1×t1 + n2×t2，厚度氧化硅膜2的t1和SOI层的厚度t2以满足0.1λ

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式