会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明申请
    • METHOD FOR PRODUCING A STACKED PHOTOVOLTAIC DEVICE
    • 用于生产堆叠的光伏器件的方法
    • US20110020974A1
    • 2011-01-27
    • US12900399
    • 2010-10-07
    • Masaki SHIMA
    • Masaki SHIMA
    • H01L31/02
    • H01L31/0725H01L31/03685H01L31/076Y02E10/545Y02E10/548
    • A stacked photovoltaic device which includes a first photovoltaic unit having an amorphous silicon layer 8 as a photoelectric conversion layer, and a second photovoltaic unit having a microcrystalline silicon layer 5 as a photoelectric conversion layer and succeeding backwardly from the first photovoltaic unit closer to a light incidence plane. The microcrystalline silicon layer 5 serving as the photoelectric conversion layer in the second photovoltaic unit has a ratio α2 (═I(Si—O)/I(Si—H)) greater than a ratio α1 (═I(Si—O)/I(Si—H)) of the amorphous silicon layer 8 serving as the photoelectric conversion layer in the first photovoltaic unit, where I(Si—O) is a peak area for the Si—O stretching mode of each silicon layer and I(Si—H) is a peak area for the Si—H stretching mode of each silicon layer when the amorphous and microcrystalline silicon layers 8 and 5 are measured by infrared absorption spectroscopy. Also, a short-circuit current Isc2 of the second photovoltaic unit is greater than a short-circuit current Isc1 of the first photovoltaic unit.
    • 一种堆叠的光伏器件,其包括具有作为光电转换层的非晶硅层8的第一光伏单元和具有微晶硅层5作为光电转换层的第二光伏单元,并且从第一光电单元向后靠近光 入射飞机 在第二光电单元中作为光电转换层的微晶硅层5的比α2(═I(Si-O)/ I(Si-H))大于比α1(═I(Si-O)/ 在第一光电单元中用作光电转换层的非晶硅层8的I(Si-H)),其中I(Si-O)是每个硅层的Si-O拉伸模式的峰面积和I( Si-H)是当通过红外吸收光谱测量非晶态和微晶硅层8和5时,每个硅层的Si-H拉伸模式的峰面积。 此外,第二光伏单元的短路电流Isc2大于第一光伏单元的短路电流Isc1。