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1. 发明授权

US07215179B2 Booster circuit 失效
标题翻译：增压电路
公开(公告)号：US07215179B2
公开(公告)日：2007-05-08
申请号：US10535102
申请日：2003-09-26
申请人： Takanori Yamazoe , Takeo Kanai
发明人： Takanori Yamazoe , Takeo Kanai
IPC分类号： G05F1/10
CPC分类号： G11C5/146 , G11C5/145 , H02M3/073 , H02M2001/009 , H02M2003/071 , H02M2003/075 , H02M2003/076
摘要： The present invention relates to a booster circuit of a non-volatile memory requiring a plus or minus high voltage equal to or higher than a power-supply voltage. The present invention can generate a high voltage of approximately 12 V even at a low power-supply voltage equal to or lower than 3 V and generate not only a plus high voltage but also a minus high voltage by the same circuit. Also, by combining a body-controlled type parallel charge pump, which is a booster circuit according to the present invention, with a serial-type charge pump, two types of high voltages can be efficiently generated and a reduction in chip areas can be achieved.
摘要翻译：本发明涉及一种非易失性存储器的升压电路，其需要等于或高于电源电压的正或负高电压。本发明即使在等于或低于3V的低电源电压下也可产生大约12V的高电压，并且不仅通过相同电路产生正高电压而且产生负高电压。此外，通过将根据本发明的升压电路的身体控制型并联电荷泵与串联型电荷泵组合，可以有效地产生两种类型的高电压，并且可以实现芯片面积的减少。

2. 发明授权

US06271708B1 Gate circuit 有权
标题翻译：门电路
公开(公告)号：US06271708B1
公开(公告)日：2001-08-07
申请号：US09368162
申请日：1999-08-05
申请人： Kimihiro Hoshi , Takeo Kanai
发明人： Kimihiro Hoshi , Takeo Kanai
IPC分类号： H03K1704
CPC分类号： H03K17/164 , H03K17/168 , H03K17/567
摘要： In a gate circuit having a turn-off gate circuit composed of: OFF gate power source Eoff of which one terminal is connected to the emitter of semiconductor switching element 81, and switch SWoff that connects the other terminal of OFF gate power source Eoff and the gate of semiconductor switching element S1 via resistor Rg, the gate circuit is provided with second switch SWoff2 that connects the other terminal of OFF gate power source Eoff and the gate of semiconductor switching element S1. By closing second switch SWoff2 at the timing at which the turn-off operation is completed, it will connect to OFF gate power source Eoff without passing through a resistor.
摘要翻译：在具有截止门电路的门电路中，包括：一个端子连接到半导体开关元件81的发射极的OFF栅极电源Eoff和将OFF栅极电源Eoff的另一个端子和通过电阻器Rg的半导体开关元件S1的栅极，栅极电路设置有连接关闭栅极电源Eoff的另一端子和半导体开关元件S1的栅极的第二开关SWoff2。通过在关断操作完成的定时关闭第二开关SWoff2，它将连接到OFF栅极电源Eoff而不通过电阻器。

3. 发明授权

US5631378A Protected aminothiazolylacetic acid derivatives 失效
公开(公告)号：US5631378A
公开(公告)日：1997-05-20
申请号：US591022
申请日：1996-01-25
申请人： Yoshio Urawa , Akihiko Shimotani , Takeo Kanai , Masahiko Tsujii
发明人： Yoshio Urawa , Akihiko Shimotani , Takeo Kanai , Masahiko Tsujii
IPC分类号： C07D277/20 , C07D277/38 , C07D277/40 , C07D277/42 , C07D499/08 , C07D501/00 , C07D501/06 , C07D501/34
CPC分类号： C07D277/587 , C07D277/20 , C07D277/42 , C07D501/00 , Y02P20/55
摘要： Described is a protected aminothiazolylacetic acid derivative represented by the following formula (I): ##STR1## wherein A represents a nitrogen atom or a methine group, R.sup.1 and R.sup.2 may be the same or different and individually represent a hydrogen atom, a lower alkyl group or a substituted or unsubstituted aryl group, R.sup.3 represents a lower alkoxy group, a halogenated lower alkoxy group, a triphenylmethoxy group, a lower alkyl group or an acyloxy group, and R.sup.4 represents a halogen atom, a hydroxy group, a lower alkoxy group or a substituted or unsubstituted amino group; and salts thereof; as well as processes for the preparation thereof. The protected aminothaizolylacetic acid derivative according to the present invention is an useful intermediate for introducing a 2-(2-aminothiazol-4-yl)-2-alkoxyiminoacetyl group or a 2-(2-aminotiazol-4-yl)-2-alkenoyl group into a cephem skeleton.

4. 发明授权

US08050085B2 Semiconductor processing device and IC card 有权
标题翻译：半导体处理装置和IC卡
公开(公告)号：US08050085B2
公开(公告)日：2011-11-01
申请号：US10521553
申请日：2002-08-29
申请人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
发明人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
IPC分类号： G11C7/10 , G11C11/40
CPC分类号： G07F7/1008 , G06Q20/341 , G06Q20/40975 , G07F7/084 , G11C11/005 , G11C16/0425 , G11C16/0433 , G11C16/16
摘要： A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately. Therefore, the stored information can efficiently be erased before the execution of a processing of writing the program, and the stored information can be erased corresponding to the data length of a necessary processing unit in the write of the encryption key to be utilized in the calculation processing of the CPU.
摘要翻译：根据本发明的半导体处理装置包括用于擦除第一数据长度单元上存储的信息的第一非易失性存储器（21），用于擦除第二数据长度单元上存储的信息的第二非易失性存储器（22），以及中央处理单元（2），能够从/向外部输入/输出加密数据。第一非易失性存储器用于存储要用于加密数据的加密密钥。第二非易失性存储器用于存储要由中央处理单元处理的程序。用于存储程序和用于存储加密密钥的非易失性存储器彼此分离，并且存储在非易失性存储器中的信息的擦除单元的数据长度被分开地定义。因此，在执行写入程序的处理之前可以有效地擦除存储的信息，并且可以根据在计算中要使用的加密密钥的写入中的必要处理单元的数据长度来擦除存储的信息处理CPU。

5. 发明申请

US20090213649A1 Semiconductor processing device and IC card 有权
标题翻译：半导体处理装置和IC卡
公开(公告)号：US20090213649A1
公开(公告)日：2009-08-27
申请号：US10521553
申请日：2002-08-29
申请人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
发明人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
IPC分类号： G11C11/34 , G11C16/04 , G11C5/14 , G06F12/14
CPC分类号： G07F7/1008 , G06Q20/341 , G06Q20/40975 , G07F7/084 , G11C11/005 , G11C16/0425 , G11C16/0433 , G11C16/16
摘要： A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately. Therefore, the stored information can efficiently be erased before the execution of a processing of writing the program, and the stored information can be erased corresponding to the data length of a necessary processing unit in the write of the encryption key to be utilized in the calculation processing of the CPU.
摘要翻译：根据本发明的半导体处理装置包括用于擦除第一数据长度单元上存储的信息的第一非易失性存储器（21），用于擦除第二数据长度单元上存储的信息的第二非易失性存储器（22），以及中央处理单元（2），能够从/向外部输入/输出加密数据。第一非易失性存储器用于存储要用于加密数据的加密密钥。第二非易失性存储器用于存储要由中央处理单元处理的程序。用于存储程序和用于存储加密密钥的非易失性存储器彼此分离，并且存储在非易失性存储器中的信息的擦除单元的数据长度被分开地定义。因此，在执行写入程序的处理之前可以有效地擦除存储的信息，并且可以根据在计算中要使用的加密密钥的写入中的必要处理单元的数据长度来擦除存储的信息处理CPU。

6. 发明授权

US07009890B2 Non-volatile semiconductor memory array and method of reading the same memory array 失效
公开(公告)号：US07009890B2
公开(公告)日：2006-03-07
申请号：US10317087
申请日：2002-12-12
申请人： Takanori Yamazoe , Hiroshi Yoshigi , Takeo Kanai
发明人： Takanori Yamazoe , Hiroshi Yoshigi , Takeo Kanai
IPC分类号： G11C16/00
CPC分类号： G11C16/26 , G11C16/32
摘要： A non-volatile semiconductor memory EEPROM is usually deteriorated depending on the number of times of program and erase operations and application years thereof. A read operation rate of the EEPROM is generally specified to the operation rate considering deterioration of memory and even in the case where the number of times of program and erase operations is rather small and application years are also rather small, the read operation has been conducted at the read operation rate specified considering deterioration of memory. Moreover, when deterioration of memory is advanced exceeding the specified deterioration, the read operation is now disabled in the worst case. In order to overcome such problem, the reference memories are allocated for every erase and program unit block in the EEPROM memory array, the reference memories are also programmed and erased whenever the memories in the block are erased and programmed and the read timing of memory is generated from the read timing of these reference memories. Moreover, the read timing of the reference memories is outputted as an external interface.

7. 发明授权

US4433142A Process for the preparation of 7-(2-amino-2-phenylacetamido) cephem derivatives 失效
标题翻译： 7-（2-氨基-2-苯乙酰氨基）头孢烯衍生物的制备方法
公开(公告)号：US4433142A
公开(公告)日：1984-02-21
申请号：US376214
申请日：1982-05-07
申请人： Keizo Takayanagi , Yasuhide Tanaka , Tasuke Kawabata , Fujio Nakamura , Yukio Morita , Shigeto Negi , Takeo Kanai , Eiichi Morita
发明人： Keizo Takayanagi , Yasuhide Tanaka , Tasuke Kawabata , Fujio Nakamura , Yukio Morita , Shigeto Negi , Takeo Kanai , Eiichi Morita
IPC分类号： C07D501/06 , A61K31/545 , C07D501/04 , C07D501/36
CPC分类号： C07D501/36
摘要： Improved process for the preparation of 7-(2-amino-2-phenyl-acetamido)cephem derivatives of the general formula (I): ##STR1## wherein R.sub.1 is a hydrogwn atom or hydroxyl group, n stands for 0, 1 or 2, and A denotes a nitrogen-containing heterocyclic group or a direct bond coupling directly the sulfur atom and the --(CH.sub.2).sub.n COOH group together, as well as pharmaceutically acceptable salts thereof. The process is not only simple and easy to carry out, but also provides as crystalline precipitate the intended products with a high yield. The 7-(2-amino-2-phenyl-acetamido)cephem derivatives are useful as intermediates for syntheses of antibacterial agents.
摘要翻译：用于制备通式（I）的7-（2-氨基-2-苯基 - 乙酰氨基）头孢烯衍生物的改进方法：其中R1是氢原子或羟基，n代表0,1或2 ，A表示含氮杂环基团或直接与硫原子和 - （CH 2）n COOH基团偶联的直接键，以及其药学上可接受的盐。该方法不仅简单易操作，而且可以以高产率提供目标产物的结晶沉淀。 7-（2-氨基-2-苯基 - 乙酰氨基）头孢烯衍生物可用作合成抗菌剂的中间体。

8. 发明申请

US20070061844A1 Cellular television broadcast system 审中-公开
标题翻译：蜂窝电视广播系统
公开(公告)号：US20070061844A1
公开(公告)日：2007-03-15
申请号：US11442661
申请日：2006-05-26
申请人： Shigeaki Hakusui , Takeo Kanai
发明人： Shigeaki Hakusui , Takeo Kanai
IPC分类号： H04N7/16 , H04N7/20
CPC分类号： H04N21/435 , H04N7/16 , H04N21/235 , H04N21/2362 , H04N21/41407 , H04N21/47202 , H04N21/6131 , H04N21/64322 , H04W4/029 , H04W4/06 , H04W36/0007 , H04W36/0009 , H04W36/06 , H04W72/005
摘要： Information services are provided via an over-the-air television broadcasting system that is segmented into a plurality of cells. Each cell includes one or more transmitting facilities for transmitting service information and mapping information. The mapping information includes adjacent cell information enabling mobile receiver units to transition between cells in order to continue receipt of service information without requiring communication from the receiver unit to the service provider. The transmitting facilities of adjacent cells may operate on the same television channel and/or on different television channels, typically chosen from a frequency set allocated to a given service provider. The service information may include different content in different cells, such as local content specific to each cell. The service information may be provided from one or more content servers in communication with the transmitting facilities.
摘要翻译：通过分割成多个小区的空中电视广播系统提供信息服务。每个小区包括用于发送服务信息和映射信息的一个或多个发送设备。映射信息包括使得移动接收机单元能够在小区之间转换的相邻小区信息，以便继续接收服务信息，而不需要从接收机单元到服务提供商的通信。相邻小区的发射设备可以在通常从分配给给定服务提供商的频率集中选择的相同电视频道和/或不同的电视频道上操作。服务信息可以包括不同小区中的不同内容，例如每个小区特有的本地内容。可以从与发送设备通信的一个或多个内容服务器提供服务信息。

9. 发明授权

US07154804B2 Semiconductor integrated circuit and IC card 失效
标题翻译：半导体集成电路和IC卡
公开(公告)号：US07154804B2
公开(公告)日：2006-12-26
申请号：US11377348
申请日：2006-03-17
申请人： Yoshio Takazawa , Toshio Yamada , Shinichi Ozawa , Takeo Kanai , Minoru Katoh , Koudou Yamauchi , Toshihiro Araki
发明人： Yoshio Takazawa , Toshio Yamada , Shinichi Ozawa , Takeo Kanai , Minoru Katoh , Koudou Yamauchi , Toshihiro Araki
IPC分类号： G11C7/00
CPC分类号： G11C5/14 , G11C7/12 , G11C7/22 , G11C17/12 , G11C2207/2227
摘要： A semiconductor integrated circuit has a memory which can enter active state or standby state, and the memory has voltage generation circuits for bit lines and source lines with which memory cells are connected. The voltage generation circuits make the potential of the bit lines and the potential of the source lines equal to each other in response to an instruction to transition from active state to standby state. The voltage generation circuits produce a potential difference between the bit lines and the source lines in response to an instruction to transition from standby state to active state. In standby state, the potential of the bit lines and that of the source lines are equal to each other. Therefore, sub-threshold leakage does not occur between the source and drain of each memory cell. In active state, the source line potential is not varied.
摘要翻译：半导体集成电路具有可以进入活动状态或待机状态的存储器，并且存储器具有用于存储单元连接的位线和源极线的电压产生电路。响应于从活动状态转换到待机状态的指令，电压产生电路使位线的电位和源极线的电位彼此相等。响应于从待机状态转换到活动状态的指令，电压产生电路产生位线和源极线之间的电位差。在待机状态下，位线的电位和源极线的电位彼此相等。因此，每个存储单元的源极和漏极之间不会发生次阈值泄漏。在活动状态下，源极线电位不变。

10. 发明授权

US4331606A N-(Substituted chromone-3-carbonyl)-phenylglycine derivatives 失效
标题翻译： N-（取代的色酮-3-羰基） - 苯基甘氨酸衍生物
公开(公告)号：US4331606A
公开(公告)日：1982-05-25
申请号：US218404
申请日：1980-12-19
申请人： Seiichiro Nomoto , Hironori Ikuta , Yoshimasa Machida , Shigeto Negi , Isao Sugiyama , Hiroshi Yamauchi , Takeo Kanai , Isao Saito
发明人： Seiichiro Nomoto , Hironori Ikuta , Yoshimasa Machida , Shigeto Negi , Isao Sugiyama , Hiroshi Yamauchi , Takeo Kanai , Isao Saito
IPC分类号： C07D311/22 , C07D501/36 , C07D311/24
CPC分类号： C07D311/22
摘要： N-(Substituted chromone-3-carbonyl)phenylglycine derivatives. These derivatives are useful intermediates for cephem compounds which are excellent as antibacterial agents.
摘要翻译： N-（取代的色酮-3-羰基）苯基甘氨酸衍生物。这些衍生物是作为抗菌剂优异的头孢烯化合物的有用的中间体。

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