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    • 7. 发明授权
    • Method of manufacturing device
    • 制造装置的方法
    • US07696067B2
    • 2010-04-13
    • US12354542
    • 2009-01-15
    • Masaru NakamuraHirokazu Matsumoto
    • Masaru NakamuraHirokazu Matsumoto
    • H01L21/30
    • H01L21/67092B23K26/0853B23K26/364B23K26/40B23K2101/40B23K2103/50H01L21/3065H01L21/67132H01L21/78
    • A method of manufacturing a device includes: a laser beam-machined groove forming step of irradiating a wafer with a laser beam from the back side of the wafer along planned dividing lines so as to form laser beam-machined grooves along the planned dividing lines; an etching step of etching a back-side surface of the wafer having been subjected to the laser beam-machined groove forming step, so as to remove denatured layers formed at processed surfaces of the laser beam-machined grooves; an adhesive film attaching step of attaching an adhesive film to the back-side surface of the wafer having been subjected to the etching step, and adhering the adhesive film side of the wafer to a surface of a dicing tape; and an adhesive film rupturing step of expanding the dicing tape so as to rupture the adhesive film along individual devices.
    • 一种制造装置的方法包括:激光束加工槽形成步骤,沿着预定分割线从晶片的背面用激光束照射晶片,以沿着预定的分割线形成激光束加工的凹槽; 蚀刻步骤,蚀刻已经经过激光加工槽形成步骤的晶片的背面,以去除在激光加工槽的加工表面形成的变性层; 粘合剂膜附着工序,将粘接膜附着在已经进行了蚀刻工序的晶片的背面,并将晶片的粘合膜侧粘接在切割带的表面上; 以及将切割带扩张以使粘合膜沿着各个装置破裂的粘合膜破裂步骤。