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1. 发明授权

US08664632B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08664632B2
公开(公告)日：2014-03-04
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

2. 发明申请

US20130228736A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20130228736A1
公开(公告)日：2013-09-05
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

3. 发明授权

US09472756B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09472756B2
公开(公告)日：2016-10-18
申请号：US13714946
申请日：2012-12-14
申请人： Takayuki Ishikawa , Yoshifumi Nishi , Shosuke Fujii
发明人： Takayuki Ishikawa , Yoshifumi Nishi , Shosuke Fujii
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/165 , H01L45/1658
摘要： According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, a variable resistance layer. The variable resistance layer is provided between the first electrode and the second electrode. The variable resistance layer contains impurity of a nonmetallic element. The impurity is at least one selected from the group consisting of S, Se, Te, F, Cl, Br, and I.
摘要翻译：根据一个实施例，非易失性存储器件包括第一电极，第二电极，可变电阻层。可变电阻层设置在第一电极和第二电极之间。可变电阻层含有非金属元素的杂质。杂质是选自S，Se，Te，F，Cl，Br和I中的至少一种。

4. 发明授权

US08698277B2 Nonvolatile variable resistance device having metal halogen or metal sulfide layer 有权
标题翻译：具有金属卤素或金属硫化物层的非挥发性可变电阻器件
公开(公告)号：US08698277B2
公开(公告)日：2014-04-15
申请号：US13233623
申请日：2011-09-15
申请人： Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
发明人： Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
IPC分类号： H01L23/52 , H01L29/00 , H01L47/00 , H01L29/02 , H01L29/04 , H01L29/06 , G11C11/00
CPC分类号： H01L45/1253 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/148 , H01L45/1616 , H01L45/1641
摘要： According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.
摘要翻译：根据一个实施例，非易失性可变电阻器件包括第一电极，第二电极，第一层和第二层。第二电极包括金属元件。第一层布置在第一电极和第二电极之间，并且包括半导体元件。第二层插入在第二电极和第一层之间并且包括半导体元件。未终止的半导体元件的百分比在第二层比在第一层中高。

5. 发明申请

US20130175490A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20130175490A1
公开(公告)日：2013-07-11
申请号：US13547645
申请日：2012-07-12
申请人： Haruka KUSAI , Kiwamu Sakuma , Shosuke Fujii , Masumi Saitoh , Masahiro Kiyotoshi
发明人： Haruka KUSAI , Kiwamu Sakuma , Shosuke Fujii , Masumi Saitoh , Masahiro Kiyotoshi
IPC分类号： H01L27/088 , H01L27/24 , H01L21/3205 , H01L21/768 , H01L21/265 , H01L21/02
CPC分类号： H01L27/088 , G11C16/04 , G11C16/10 , H01L21/02367 , H01L21/265 , H01L21/32051 , H01L21/76877 , H01L27/11519 , H01L27/11524 , H01L27/11551 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L27/24 , H01L29/66825 , H01L29/66833 , H01L29/685 , H01L29/788 , H01L29/792 , H01L29/82
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括具有存储单元的鳍式堆叠层结构和连接到该结构的端部的光束。结构和梁中的每一个包括沿垂直方向堆叠的半导体层。梁包括设置在梁的一端的接触部分和设置在接触部分和结构的端部之间的低电阻部分。

6. 发明申请

US20130015519A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20130015519A1
公开(公告)日：2013-01-17
申请号：US13622612
申请日：2012-09-19
申请人： Shosuke Fujii , Kiwamu Sakuma , Jun Fujiki , Atsuhiro Kinoshita
发明人： Shosuke Fujii , Kiwamu Sakuma , Jun Fujiki , Atsuhiro Kinoshita
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L27/11551 , H01L27/11519 , H01L27/11521 , H01L27/11565 , H01L27/11578
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes first to n-th semiconductor layers which are stacked in a first direction perpendicular to a surface of a semiconductor substrate and which extend in a second direction parallel to the surface of the semiconductor substrate, an electrode which extends in the first direction along side surfaces of the first to n-th semiconductor layers, the side surfaces of the first to n-th semiconductor layers exposing in a third direction perpendicular to the first and second directions, and first to n-th charge storage layers located between the first to n-th semiconductor layers and the electrode respectively. The first to n-th charge storage layers are separated from each other in areas between the first to n-th semiconductor layers.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一至第n半导体层，它们沿垂直于半导体衬底的表面的第一方向堆叠并且沿与半导体衬底的表面平行的第二方向延伸，电极，其沿第一方向沿着第一至第n半导体层的侧表面延伸，第一至第n半导体层的侧表面在垂直于第一和第二方向的第三方向上暴露，以及第一至第n- 分别位于第一至第n半导体层之间的电荷存储层和电极。第一至第n电荷存储层在第一至第n半导体层之间的区域中彼此分离。

7. 发明申请

US20120261742A1 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20120261742A1
公开(公告)日：2012-10-18
申请号：US13457054
申请日：2012-04-26
申请人： Izumi Hirano , Shosuke Fujii , Yuichiro Mitani , Naoki Yasuda
发明人： Izumi Hirano , Shosuke Fujii , Yuichiro Mitani , Naoki Yasuda
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/513
摘要： A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of Al2O3, HfO2, ZrO2, TiO2, and MgO, the material is stoichiometric composition, and the charge trapping film includes material different from the material of the metal oxide.
摘要翻译：根据实施例的非易失性半导体存储装置包括：半导体层; 形成在所述半导体层上的第一绝缘膜，所述第一绝缘膜是含有氧化硅或氮氧化硅的单层膜; 形成在第一绝缘膜上的电荷捕获膜; 形成在电荷捕获膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。金属氧化物存在于第一绝缘膜和电荷捕获膜之间的界面中，金属氧化物包括选自Al 2 O 3，HfO 2，ZrO 2，TiO 2和MgO的材料，该材料为化学计量组成，并且电荷捕获膜包括与金属氧化物的材料不同的材料。

8. 发明授权

US09087715B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US09087715B2
公开(公告)日：2015-07-21
申请号：US13547645
申请日：2012-07-12
申请人： Haruka Kusai , Kiwamu Sakuma , Shosuke Fujii , Masumi Saitoh , Masahiro Kiyotoshi
发明人： Haruka Kusai , Kiwamu Sakuma , Shosuke Fujii , Masumi Saitoh , Masahiro Kiyotoshi
IPC分类号： H01L27/115 , H01L27/088 , H01L21/265 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L27/24 , G11C16/04 , H01L29/66 , H01L29/68 , H01L29/788 , H01L29/792 , G11C16/10 , H01L29/82
CPC分类号： H01L27/088 , G11C16/04 , G11C16/10 , H01L21/02367 , H01L21/265 , H01L21/32051 , H01L21/76877 , H01L27/11519 , H01L27/11524 , H01L27/11551 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L27/24 , H01L29/66825 , H01L29/66833 , H01L29/685 , H01L29/788 , H01L29/792 , H01L29/82
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括具有存储单元的鳍式堆叠层结构和连接到该结构的端部的光束。结构和梁中的每一个包括沿垂直方向堆叠的半导体层。梁包括设置在梁的一端的接触部分和设置在接触部分和结构的端部之间的低电阻部分。

9. 发明授权

US08610101B2 Nonvolatile variable resistance element having a variable resistive layer disposed between first and second electrodes 有权
标题翻译：具有设置在第一和第二电极之间的可变电阻层的非易失性可变电阻元件
公开(公告)号：US08610101B2
公开(公告)日：2013-12-17
申请号：US13359880
申请日：2012-01-27
申请人： Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
发明人： Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
IPC分类号： H01L29/02
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/1266 , H01L45/148
摘要： According to one embodiment, there are provided a first electrode, a second electrode containing a 1B group element having an Al element added thereto, and a variable resistive layer disposed between the first electrode and the second electrode and having a silicon element.
摘要翻译：根据一个实施例，提供了第一电极，包含添加有Al元素的1B族元素的第二电极和设置在第一电极和第二电极之间并具有硅元素的可变电阻层。

10. 发明授权

US08569823B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08569823B2
公开(公告)日：2013-10-29
申请号：US13235970
申请日：2011-09-19
申请人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
发明人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11568 , H01L29/517 , H01L29/66833 , H01L29/792
摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
摘要翻译：根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

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