专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6009828A Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method 失效
标题翻译：用于形成薄半导体膜的方法和用于该方法的等离子体CVD装置
公开(公告)号：US6009828A
公开(公告)日：2000-01-04
申请号：US783283
申请日：1997-01-10
申请人： Takashi Tomita , Katsuhiko Nomoto , Yoshihiro Yamamoto , Hitoshi Sannomiya , Sae Takagi
发明人： Takashi Tomita , Katsuhiko Nomoto , Yoshihiro Yamamoto , Hitoshi Sannomiya , Sae Takagi
IPC分类号： C23C16/515 , H01L31/20 , C23C16/00
CPC分类号： C23C16/515 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.
摘要翻译：根据本发明的薄半导体膜的制造方法包括以下步骤：将IV族化合物或其衍生物置于等离子体状态; 将IV族化合物或其衍生物分解成活性物质; 并且将活性物质沉积在基板上，其中用于产生等离子体的能量间歇地以供给时间间隔供给，所述供给时间间隔等于或小于{（除了长时间活性物质以外的活性物质反应的源气体的二次反应速率常数）血浆中的生命活性物质）x（源气体分子数）}。

2. 发明授权

US5618758A Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method 失效
标题翻译：用于形成薄半导体膜的方法和用于该方法的等离子体CVD装置
公开(公告)号：US5618758A
公开(公告)日：1997-04-08
申请号：US601990
申请日：1996-02-15
申请人： Takashi Tomita , Katsuhiko Nomoto , Yoshihiro Yamamoto , Hitoshi Sannomiya , Sae Takagi
发明人： Takashi Tomita , Katsuhiko Nomoto , Yoshihiro Yamamoto , Hitoshi Sannomiya , Sae Takagi
IPC分类号： C23C16/515 , H01L31/20 , H01L21/302
CPC分类号： C23C16/515 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.
摘要翻译：根据本发明的薄半导体膜的制造方法包括以下步骤：将IV族化合物或其衍生物置于等离子体状态; 将IV族化合物或其衍生物分解成活性物质; 并且将活性物质沉积在基板上，其中用于产生等离子体的能量间歇地以供给时间间隔供给，所述供给时间间隔等于或小于{（除了长时间活性物质以外的活性物质反应的源气体的二次反应速率常数）血浆中的生命活性物质）x（源气体分子数）}。

3. 发明授权

US06242686B1 Photovoltaic device and process for producing the same 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US06242686B1
公开(公告)日：2001-06-05
申请号：US09330165
申请日：1999-06-11
申请人： Katsushi Kishimoto , Takanori Nakano , Hitoshi Sannomiya , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Takanori Nakano , Hitoshi Sannomiya , Katsuhiko Nomoto
IPC分类号： H01L31075
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity.
摘要翻译：光电器件具有p层，i层和n层的pin结，其中p层包括第一p层和其间的第二p层，第一p层具有厚度 5nm以下，均匀掺杂有p型杂质，第2p层是通过分解不含p型杂质的气体形成的。

4. 发明授权

US5487786A Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder 失效
标题翻译：能够抑制聚硅烷粉末产生的等离子体化学气相沉积装置
公开(公告)号：US5487786A
公开(公告)日：1996-01-30
申请号：US363226
申请日：1994-12-22
申请人： Atsushi Chida , Hitoshio Sannomiya , Katsuhiko Nomoto , Hiroshi Okamoto , Yoshihiro Yamamoto
发明人： Atsushi Chida , Hitoshio Sannomiya , Katsuhiko Nomoto , Hiroshi Okamoto , Yoshihiro Yamamoto
IPC分类号： H01L21/205 , C23C16/44 , C23C16/509 , H01L31/04 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/32724
摘要： There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode and a high frequency application electrode arranged opposite to and parallel to a substrate held by the substrate holding electrode. A material gas introduced between the substrate holding electrode and the high frequency application electrode is decomposed by glow discharge, so that a thin film is deposited on the heated substrate. A first electrode heater for heating a peripheral portion of the high frequency application electrode is installed along the peripheral portion of the high frequency application electrode. A second electrode heater for heating the peripheral portion of the high frequency application electrode and a surface of the high frequency application electrode opposite to its surface facing the substrate is composed of a bottom portion and a side portion provided uprightly along a peripheral edge of the bottom portion and formed in a concave shape to surround the high frequency application electrode with a spacing therebetween.
摘要翻译：提供了能够以高速率沉积高质量的a-Si：H或其它膜的等离子体CVD装置，并且可以显着提高其生产效率。 CVD装置具有基板保持电极和与由基板保持电极保持的基板相对并平行的高频施加电极。在基板保持电极和高频施加电极之间引入的原料气体通过辉光放电分解，使得在被加热的基板上沉积薄膜。用于加热高频施加电极的周边部分的第一电极加热器沿着高频施加电极的周边部分安装。用于加热高频施加电极的周边部分的第二电极加热器和与其面向基板的表面相对的高频施加电极的表面由底部和沿着底部的周边垂直设置的侧部分组成并且形成为凹形，以围绕高频施加电极间隔开。

5. 发明申请

US20050022864A1 Manufacturing method of silicon thin film solar cell 审中-公开
标题翻译：硅薄膜太阳能电池的制造方法
公开(公告)号：US20050022864A1
公开(公告)日：2005-02-03
申请号：US10874365
申请日：2004-06-24
申请人： Yasushi Fujioka , Akira Shimizu , Hiroyuki Fukuda , Katsuhiko Nomoto
发明人： Yasushi Fujioka , Akira Shimizu , Hiroyuki Fukuda , Katsuhiko Nomoto
IPC分类号： C23C16/24 , C23C16/515 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/18 , H01L31/00
CPC分类号： H01L31/076 , C23C16/24 , C23C16/515 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： To uniformly form a silicon thin film for a solar cell, having an i layer formed with crystalline silicon, on a substrate of a large area to provide a high power solar cell, in a manufacturing method of a silicon thin film solar cell, a silicon thin film, having a structure such that an i layer is sandwiched between a p layer and an n layer, is formed on a substrate with a high frequency plasma CVD method, wherein i layer is formed with crystalline silicon using plasma with pulse-modulated high frequency power, one cycle of pulse modulation includes an ON state for outputting high frequency power and an OFF state for not outputting, an output waveform is modulated to be rectangular, a time of the ON state is 1-100 microseconds, and a time of the OFF state is 5 microseconds or longer.
摘要翻译：为了在硅薄膜太阳能电池的制造方法中均匀地形成具有由晶体硅形成的i层的太阳能电池用硅薄膜，在大面积的基板上提供高功率太阳能电池，硅在具有高频等离子体CVD法的基板上形成具有使i层夹在p层和n层之间的结构的薄膜，其中i层使用具有脉冲调制高频的等离子体形成晶体硅电源中，脉冲调制的一个周期包括用于输出高频电源的ON状态和不输出的OFF状态，输出波形被调制为矩形，ON状态的时间为1-100微秒，时间为 OFF状态为5微秒以上。

6. 发明授权

US06979589B2 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof 失效
标题翻译：硅系薄膜光电转换装置及其制造方法
公开(公告)号：US06979589B2
公开(公告)日：2005-12-27
申请号：US10942958
申请日：2004-09-17
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
IPC分类号： H01L31/04 , H01L21/00 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.
摘要翻译：以低成本简单高效地制造出优异的硅系薄膜光电转换元件。具体而言，包括通过等离子体CVD沉积的p型半导体层，i型微晶硅系光电转换层和n型半导体层的硅基薄膜光电转换装置的制造方法包括以下步骤：：在相同的等离子体CVD膜沉积室内的基板上依次沉积p型半导体层，i型微晶硅基光电转换层和n型半导体层; 将所述衬底转移到所述成膜室内; 并且随后沉积p型半导体层，i型微晶硅基光电转换层和n型半导体层的步骤，消除了残留的n型杂质对阴极和/或膜内的影响沉积室。

7. 发明授权

US07565880B2 Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same 失效
标题翻译：等离子体CVD装置，以及用于形成膜的方法以及使用其形成半导体装置的方法
公开(公告)号：US07565880B2
公开(公告)日：2009-07-28
申请号：US11700895
申请日：2007-02-01
申请人： Akira Shimizu , Yuhsuke Fukuoka , Yasushi Fujioka , Katsushi Kishimoto , Katsuhiko Nomoto
发明人： Akira Shimizu , Yuhsuke Fukuoka , Yasushi Fujioka , Katsushi Kishimoto , Katsuhiko Nomoto
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , C23C16/4583 , C23C16/5096
摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.
摘要翻译：等离子体CVD装置包括阳极电极和阴极电极，用于通过在阳极电极和阴极电极之间执行等离子体放电来在衬底上形成薄膜，其包括：设置在阳极电极和阴极之间的衬底保持器 ; 以及设置在所述基板保持件和所述阳极电极或所述阴极电极的一个电极之间的一个导电部件，其中，所述基板保持器支撑所述基板，所述一个导电部件设置在所述一个电极和所述基板保持件之间，一个电极和衬底保持器之间的整个空间，并且一个导电构件电连接到一个电极和衬底保持器。

8. 发明授权

US07195673B2 Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same 有权
公开(公告)号：US07195673B2
公开(公告)日：2007-03-27
申请号：US10735621
申请日：2003-12-16
申请人： Akira Shimizu , Yuhsuke Fukuoka , Yasushi Fujioka , Katsushi Kishimoto , Katsuhiko Nomoto
发明人： Akira Shimizu , Yuhsuke Fukuoka , Yasushi Fujioka , Katsushi Kishimoto , Katsuhiko Nomoto
IPC分类号： C23C16/00
CPC分类号： H01J37/32532 , C23C16/4583 , C23C16/5096
摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.

9. 发明申请

US20050085003A1 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof 失效
公开(公告)号：US20050085003A1
公开(公告)日：2005-04-21
申请号：US10942958
申请日：2004-09-17
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
IPC分类号： H01L31/04 , H01L21/00 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

10. 发明授权

US07722738B2 Semiconductor device manufacturing unit and semiconductor device manufacturing method 有权
标题翻译：半导体器件制造单元和半导体器件制造方法
公开(公告)号：US07722738B2
公开(公告)日：2010-05-25
申请号：US10704129
申请日：2003-11-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Yasushi Fujioka , Hiroyuki Fukuda , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Yasushi Fujioka , Hiroyuki Fukuda , Katsuhiko Nomoto
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/5096 , C23C16/24 , H01J37/32568 , H01J2237/2001 , H01L21/67069 , Y10T29/49108
摘要： A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided.A chamber 11 is formed so that the inside thereof can be controlled at a vacuum of an arbitrary degree. Anode supports 6 for supporting an anode 4 are placed at the bottom of the internal structure 8. The anode 4 is made of a material having a high electrical conductivity and a high heat resistance. The temperature of the anode 4 is controlled by a heater 24 so as to be in a range of from room temperature to 600° C. A cathode 2 is placed on a cathode support 5 so as to face the anode 4. The cathode support 5 is attached to an internal structure 8 made of a frame in a rectangular prism form provided within the chamber 11.
摘要翻译：提供一种半导体器件制造单元，其中可以以简单的结构放置阴极和阳极; 其中可以获得优异的成膜和膜厚分布; 并且其中不需要设置冷却装置。形成室11，使得其内部能够被任意程度的真空度控制。阳极支撑6用于支撑阳极4放置在内部结构8的底部。阳极4由具有高导电性和高耐热性的材料制成。阳极4的温度由加热器24控制在室温至600℃的范围内。阴极2被放置在阴极支撑件5上以面对阳极4.阴极支撑件5 附接到由设置在室11内的矩形棱镜形式的框架构成的内部结构8。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式