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1. 发明申请

US20070284539A1 Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus 有权
标题翻译：快原子轰击源，快原子束发射法和表面改性装置
公开(公告)号：US20070284539A1
公开(公告)日：2007-12-13
申请号：US11790611
申请日：2007-04-26
申请人： Takashi Omura , Shinji Ishitani , Naoki Suzuki
发明人： Takashi Omura , Shinji Ishitani , Naoki Suzuki
IPC分类号： H01J27/02
CPC分类号： H05H3/02 , G21K5/02 , G21K5/04
摘要： A positive electrode drive unit enables a positive electrode to be repeatedly rotated about the center of the positive electrode to vary a distance between the positive electrode and an atom emission unit. A control unit receives input data which is set to obtain a desired atom density distribution by displacement of the positive electrode, and the control unit outputs a drive control signal for displacing the positive electrode to the positive electrode drive unit. The positive electrode drive unit is stopped during running by the control unit, or a drive speed of the positive electrode drive unit is changed by the control unit. Therefore, a residence time of each attitude is changed in the positive electrode to vary the atom density per unit time.
摘要翻译：正极驱动单元能够使正极围绕正极的中心反复旋转，以改变正极和原子发射单元之间的距离。控制单元接收输入数据，其被设置为通过正极的位移获得期望的原子密度分布，并且控制单元输出用于将正电极移位到正电极驱动单元的驱动控制信号。正极驱动单元在由控制单元运行期间停止，或者通过控制单元改变正极驱动单元的驱动速度。因此，在正极中改变每个姿态的停留时间，以改变每单位时间的原子密度。

2. 发明授权

US07550715B2 Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus 有权
标题翻译：快原子轰击源，快原子束发射法和表面改性装置
公开(公告)号：US07550715B2
公开(公告)日：2009-06-23
申请号：US11790611
申请日：2007-04-26
申请人： Takashi Omura , Shinji Ishitani , Naoki Suzuki
发明人： Takashi Omura , Shinji Ishitani , Naoki Suzuki
IPC分类号： H05H3/02
CPC分类号： H05H3/02 , G21K5/02 , G21K5/04
摘要： A positive electrode drive unit enables a positive electrode to be repeatedly rotated about the center of the positive electrode to vary a distance between the positive electrode and an atom emission unit. A control unit receives input data which is set to obtain a desired atom density distribution by displacement of the positive electrode, and the control unit outputs a drive control signal for displacing the positive electrode to the positive electrode drive unit. The positive electrode drive unit is stopped during running by the control unit, or a drive speed of the positive electrode drive unit is changed by the control unit. Therefore, a residence time of each attitude is changed in the positive electrode to vary the atom density per unit time.
摘要翻译：正极驱动单元能够使正极围绕正极的中心反复旋转，以改变正极和原子发射单元之间的距离。控制单元接收输入数据，其被设置为通过正极的位移获得期望的原子密度分布，并且控制单元输出用于将正电极移位到正电极驱动单元的驱动控制信号。正极驱动单元在由控制单元运行期间停止，或者通过控制单元改变正极驱动单元的驱动速度。因此，在正极中改变每个姿态的停留时间，以改变每单位时间的原子密度。

3. 发明申请

US20050104173A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050104173A1
公开(公告)日：2005-05-19
申请号：US10946372
申请日：2004-09-21
申请人： Kazushi Higashi , Kouichi Yoshida , Shinji Ishitani , Daido Komyoji
发明人： Kazushi Higashi , Kouichi Yoshida , Shinji Ishitani , Daido Komyoji
IPC分类号： H01L21/56 , H01L21/60 , H01L23/498 , H01L29/06 , H01L21/44 , H01L21/48
CPC分类号： H01L23/4985 , H01L21/563 , H01L24/28 , H01L24/81 , H01L29/0657 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81136 , H01L2224/81203 , H01L2224/81208 , H01L2224/81801 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/16152 , H01L2924/181 , H01L2924/18161 , H01L2924/3025 , H01L2924/3511 , H01L2924/00 , H01L2924/3512
摘要： In a semiconductor device of the present invention, in order that the contact of electrodes formed on a film substrate with edge parts of a semiconductor element at the time such as when the semiconductor element is mounted thereon may be reliably prevented, in the semiconductor element mounted on at least one surface of the film substrate having the electrodes, an insulating protection part is formed at a desired position of the surface opposed to the electrodes, and the distance between the semiconductor element and the film substrate is set at not less than 10 μm.
摘要翻译：在本发明的半导体器件中，为了能够可靠地防止在半导体元件安装时在膜基板上形成的半导体元件的边缘部分与半导体元件的边缘部分的接触，在具有电极的膜基板的至少一个表面上，在与电极相对的表面的期望位置处形成绝缘保护部，并且将半导体元件和膜基板之间的距离设定为不小于10um 。

4. 发明授权

US07554126B2 Semiconductor light-emitting element, manufacturing method and mounting method of the same and light-emitting device 有权
标题翻译：半导体发光元件及其制造方法和安装方法以及发光装置
公开(公告)号：US07554126B2
公开(公告)日：2009-06-30
申请号：US11662547
申请日：2005-09-22
申请人： Kazushi Higashi , Shinji Ishitani
发明人： Kazushi Higashi , Shinji Ishitani
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2933/0016
摘要： An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.
摘要翻译：本发明的LED芯片具有在元件基板的下表面上依次形成n型半导体层和p型半导体层的结构，p型半导体层形成在除了用于n电极的区域。在n电极的区域上形成第一n电极，在p型半导体层上形成第一p电极。具有开口并形成在第一n电极和第一p电极上的第一绝缘层，以及具有实际相同尺寸的第二n电极和第二p电极形成在第一绝缘层上。通过这种布置，可以使n型半导体层上的电极更大，从而可以通过以低成本使用焊料来执行LED芯片到电路板上的安装过程。

5. 发明申请

US20080137270A1 ELECTRONIC ELEMENT PACKAGE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电子元件包装及其制造方法
公开(公告)号：US20080137270A1
公开(公告)日：2008-06-12
申请号：US11952173
申请日：2007-12-07
申请人： Kazushi Higashi , Shinji Ishitani
发明人： Kazushi Higashi , Shinji Ishitani
IPC分类号： H05K7/14 , B23P17/04
CPC分类号： G01P1/023 , B81B7/007 , B81B2201/025 , H01L24/45 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , Y10T29/49 , H01L2924/00014 , H01L2924/00
摘要： An electronic element package includes a plate-like sensor substrate with a detector formed thereon, and a plate-like first cover substrate and a plate-like second cover substrate joined directly or indirectly to a top surface and a bottom surface, respectively, of the sensor substrate so that the sensor substrate is located between the first and second cover substrates, the sensor substrate including, a frame surrounding the detector via a space, beams joining the detector to the frame, and an electrode disposed on the frame and electrically connected to the detector, one of the first cover substrate and the second cover substrate having a through-hole which contacts an electrode. The electronic element package enables a reduction in thickness and offers improved reliability.
摘要翻译：电子元件封装包括其上形成有检测器的板状传感器基板，以及板状第一盖基板和板状第二盖基板，其分别直接或间接地连接到上表面和下表面传感器基板，使得传感器基板位于第一和第二盖基板之间，传感器基板包括经由空间围绕检测器的框架，将检测器连接到框架的梁和设置在框架上的电极，并电连接到所述检测器，所述第一覆盖基板和所述第二盖板基板中的一个具有与电极接触的通孔。电子元件封装能够减小厚度并提供改进的可靠性。

6. 发明申请

US20070262338A1 Semiconductor Light-Emitting Element, Manufacturing Method and Mounting Method of the Same and Light-Emitting Device 有权
标题翻译：半导体发光元件及其制造方法及其安装方法及发光装置
公开(公告)号：US20070262338A1
公开(公告)日：2007-11-15
申请号：US11662547
申请日：2005-09-22
申请人： Kazushi Higashi , Shinji Ishitani
发明人： Kazushi Higashi , Shinji Ishitani
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2933/0016
摘要： An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.
摘要翻译：本发明的LED芯片具有在元件基板的下表面上依次形成n型半导体层和p型半导体层的结构，p型半导体层形成在除了用于n电极的区域。在n电极的区域上形成第一n电极，在p型半导体层上形成第一p电极。具有开口并形成在第一n电极和第一p电极上的第一绝缘层，以及具有实际相同尺寸的第二n电极和第二p电极形成在第一绝缘层上。通过这种布置，可以使n型半导体层上的电极更大，从而可以通过以低成本使用焊料来执行LED芯片到电路板上的安装过程。

7. 发明授权

US08240539B2 Joining apparatus with UV cleaning 有权
标题翻译：带紫外线清洗的接头装置
公开(公告)号：US08240539B2
公开(公告)日：2012-08-14
申请号：US11136433
申请日：2005-05-25
申请人： Kazushi Higashi , Tatsuo Sasaoka , Shinji Ishitani
发明人： Kazushi Higashi , Tatsuo Sasaoka , Shinji Ishitani
IPC分类号： B23K1/06 , B23K1/00 , B23K37/00 , B23K37/04
CPC分类号： H05K3/328 , B23K20/10 , B23K2101/40 , H01L2224/75 , H05K3/3489 , H05K2203/0285
摘要： The joining apparatus includes a suction nozzle for holding an electronic component, a board stage for holding a circuit board in opposition to the electronic component, and an excimer ultraviolet lamp placed at an irradiation position between the positioned electronic component and circuit board. In such a joining apparatus, ultraviolet irradiation to Au bumps of the electronic component and ultraviolet irradiation to board electrodes of the circuit board are performed concurrently by the excimer ultraviolet lamp to execute a cleaning process of the two metallic portions. Thereafter, ultrasonic vibrations are imparted to the two metallic portions while those metallic portions are kept in contact with each other, by which metal joining between the two metallic portions is fulfilled.
摘要翻译：接合装置包括用于保持电子部件的吸嘴，用于保持与电子部件相对的电路板的板台，以及放置在定位的电子部件和电路板之间的照射位置处的准分子紫外线灯。在这种接合装置中，由准分子紫外线灯同时进行对电子部件的Au凸块的紫外线照射和电路基板的电极板的紫外线照射，以进行两个金属部的清洗处理。此后，对这两个金属部分施加超声波振动，同时使这些金属部分彼此保持接触，由此满足两个金属部分之间的金属接合。

8. 发明授权

US07692292B2 Packaged electronic element and method of producing electronic element package 失效
标题翻译：封装电子元件和电子元件封装的制造方法
公开(公告)号：US07692292B2
公开(公告)日：2010-04-06
申请号：US10581792
申请日：2004-12-02
申请人： Kazushi Higashi , Shinji Ishitani
发明人： Kazushi Higashi , Shinji Ishitani
IPC分类号： H01L23/10
CPC分类号： H01L25/165 , H01L23/04 , H01L23/055 , H01L23/10 , H01L23/26 , H01L25/04 , H01L25/065 , H01L2224/16 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15153 , H01L2924/15165 , H01L2924/1579 , H01L2924/16152 , H01L2924/1617 , H01L2924/16195 , H01L2924/19106 , H01L2924/19107 , H03H9/0547 , H03H9/059 , H03H9/1071
摘要： A first container member (9, 109, 212) mounting an electronic device (71, 171, 261) thereon and a second container member (2, 102, 202) are bonded with an adhesive (3, 103) or a metal layer (103, 251). Thus an inner space (90, 190, 211) is formed and the electronic device can be closed in the inner space at a low temperature. In the case the adhesive is used, an exposed surface of the adhesive is coated with a metal film (4) to improve the closeness of the inner space. Further, an electronic device (261, 272) may be mounted on the second container member so as to increase the electronic device arrangement density in a packaged electronic device.
摘要翻译：在其上安装电子设备（71,171,261）的第一容器构件（9,109,212）和第二容器构件（2,102,202）用粘合剂（3,103）或金属层（ 103,251）。因此，形成内部空间（90,190,211），并且电子设备可以在低温度的内部空间中封闭。在使用粘合剂的情况下，粘合剂的暴露表面涂覆有金属膜（4）以改善内部空间的接近度。此外，可以将电子设备（261,272）安装在第二容器构件上，以增加封装的电子设备中的电子设备配置密度。

9. 发明申请

US20070108634A1 Packaged electronic element and method of producing electronic element package 失效
标题翻译：封装电子元件和电子元件封装的制造方法
公开(公告)号：US20070108634A1
公开(公告)日：2007-05-17
申请号：US10581792
申请日：2004-12-02
申请人： Kazushi Higashi , Shinji Ishitani
发明人： Kazushi Higashi , Shinji Ishitani
IPC分类号： H01L23/28
CPC分类号： H01L25/165 , H01L23/04 , H01L23/055 , H01L23/10 , H01L23/26 , H01L25/04 , H01L25/065 , H01L2224/16 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15153 , H01L2924/15165 , H01L2924/1579 , H01L2924/16152 , H01L2924/1617 , H01L2924/16195 , H01L2924/19106 , H01L2924/19107 , H03H9/0547 , H03H9/059 , H03H9/1071
摘要： A first container member (9, 109, 212) mounting an electronic device (71, 171, 261) thereon and a second container member (2, 102, 202) are bonded with an adhesive (3, 103) or a metal layer (103, 251). Thus an inner space (90, 190, 211) is formed and the electronic device can be closed in the inner space at a low temperature. In the case the adhesive is used, an exposed surface of the adhesive is coated with a metal film (4) to improve the closeness of the inner space. Further, an electronic device (261, 272) may be mounted on the second container member so as to increase the electronic device arrangement density in a packaged electronic device.
摘要翻译：在其上安装电子设备（71,171,261）的第一容器构件（9,109,212）和第二容器构件（2,102,202）用粘合剂（3,103）或金属层（ 103,251）。因此，形成内部空间（90,190,211），并且电子设备可以在低温度的内部空间中封闭。在使用粘合剂的情况下，粘合剂的暴露表面涂覆有金属膜（4）以改善内部空间的接近度。此外，可以将电子设备（261,272）安装在第二容器构件上，以增加封装的电子设备中的电子设备配置密度。

10. 发明授权

US08129739B2 Semiconductor light emitting device and semiconductor light emitting device mounted board 有权
标题翻译：半导体发光器件和半导体发光器件安装板
公开(公告)号：US08129739B2
公开(公告)日：2012-03-06
申请号：US11919558
申请日：2006-07-12
申请人： Kazushi Higashi , Shinji Ishitani
发明人： Kazushi Higashi , Shinji Ishitani
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L24/17 , H01L33/38 , H01L33/62 , H01L2224/05166 , H01L2224/05568 , H01L2224/05573 , H01L2224/0558 , H01L2224/05644 , H01L2224/16 , H01L2924/01004 , H01L2924/01079 , H01L2924/12041 , H01L2924/00 , H01L2924/00014
摘要： In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, the occurrence of a faulty junction after mounting can be suppressed by placement of the n-bump at center of the bump array, because the position at the center is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.
摘要翻译：在具有由形成在n电极层上形成的一个n凸点和在p电极层上形成的大量p凸块组成的多个凸起的矩阵的半导体发光器件中，发生在p电极层之后的错误接合可以通过将凸块放置在凸块阵列的中心处来抑制安装，因为在安装之后，中心处的位置最能抵抗应力的发生。使用这种凸起阵列的构造增加了其安装的可靠性，同时提高了具有增加的尺寸的半导体发光器件的发光强度的均匀性。

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