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1. 发明授权

US5977414A 2,3-Dihalogeno-6-trifluoromethylbenzene derivatives and processes for the preparation thereof 失效
标题翻译： 2,3-二卤代-6-三氟甲苯衍生物及其制备方法
公开(公告)号：US5977414A
公开(公告)日：1999-11-02
申请号：US43894
申请日：1998-03-30
申请人： Takashi Okabe , Isamu Kasahara , Tatsumi Suzuki
发明人： Takashi Okabe , Isamu Kasahara , Tatsumi Suzuki
IPC分类号： C07C45/00 , C07C45/63 , C07C47/55 , C07C249/08 , C07C251/48 , C07C259/18 , C07C45/42
CPC分类号： C07C259/18 , C07C249/08 , C07C251/48 , C07C45/00 , C07C45/63 , C07C47/55
摘要： 2,3-Dihalogeno-6-trifluoromethylbenzaldehydes of general formula (I) useful as intermediates for the preparation of fungicides for agricultural and horticultural use;a process for the preparation of the same; and process for preparing 2,3-dihalogeno-6-trifluoromethylbenzamidoximes of general formula (IV) from the above compounds, wherein X.sup.1 and X.sup.2 are each independently fluoro, chloro or bromo. ##STR1##
摘要翻译： PCT No.PCT / JP97 / 02613 371日期1998年3月30日 102（e）1998年3月30日PCT PCT 1997年7月29日PCT公布。公开号WO98 / 04509 日期：2月5日，19982,3-二卤代-6-三氟甲基苯甲醛，其通式（I）可用作制备用于农业和园艺用途的杀真菌剂的中间体;其制备方法; 和由上述化合物制备通式（Ⅳ）的2,3-二卤代-6-三氟甲基苯甲酰氨基肟的方法，其中X 1和X 2各自独立地为氟，氯或溴。

2. 发明授权

US4994478A Oxadiazole derivative 失效
标题翻译：恶二唑衍生物
公开(公告)号：US4994478A
公开(公告)日：1991-02-19
申请号：US357623
申请日：1989-05-18
申请人： Takashi Kishimoto , Takashi Okabe , Tomio Yamada , Michihiko Matsuda , Yukio Kitagawa
发明人： Takashi Kishimoto , Takashi Okabe , Tomio Yamada , Michihiko Matsuda , Yukio Kitagawa
IPC分类号： A01N43/82 , A01N43/836 , A01N47/06 , A01N47/12 , A01N47/22 , A01N47/24 , C07D271/06 , C07D271/07 , C07D285/08 , C07D413/04 , C07D413/12 , C07D417/06
CPC分类号： C07D271/06 , A01N43/82 , A01N47/06 , A01N47/12 , A01N47/22 , A01N47/24 , C07D271/07 , C07D285/08 , C07D413/04 , C07D417/06
摘要： The present invention relates to a compound having the formula ##STR1## (wherein R.sub.1 denotes a phenyl radical (which may be substituted by halogen atoms, C.sub.1-6 alkyl radicals, C.sub.1-6 alkoxy radicals (which may be substituted by C.sub.1-6 alkoxy radicals,) C.sub.2-6 alkynyloxy radicals, amino radicals, nitro radicals, phenyl radicals, phenoxy radicals or C.sub.1-6 alkylthio radicals), a five or six membered heterocyclic radical (which may be substituted by halogen atoms or C.sub.1-6 alkyl radicals), a C.sub.1-6 alkyl radical (which may be substituted by aryl radicals) or ##STR2## wherein each or r.sup.1 and r.sup.2 denotes a C.sub.1-6 alkyl radical or a phenyl radical)X denotes oxygen atom or sulfur atom;A denotes ##STR3## B denotes ##STR4## D denotes ##STR5## n, m and l denote 0 or 1, (wherein r.sup.3, r.sup.4, r.sup.6, r.sup.7, r.sup.9 and r.sup.10, respectively, denotes hydrogen atom, halogen atom, C.sub.1-6 alkyl radical, the radical expressed by the formula --Y-- r.sup.12 (wherein r.sup.12 denotes hydrogen atom, cyano radical, C.sub.1-6 alkyl radical (which may be substituted by C.sub.1-6 alkoxycarbonyl radicals,) cycloalkyl radical, C.sub.1-6 alkoxycarbonyl radical, C.sub.1-6 alkylcarbamoyl radical, C.sub.1-6 alkylthiocarbamoyl radical, phenylcarbamoyl radical (which may be substituted by halogen atom), phenylthiocarbamoyl radical (which may be substituted by halogen atoms), or C.sub.1-6 alkylcarbonyl radical (which may be substituted by halogen atoms); Y denotes oxygen atom, sulfur atom, --SO--, --SO.sub.2 --, or the radical expressed by the formula ##STR6## (r.sup.13 : hydrogen atom, C.sub.1-6 alkyl radical)), or oxo-radicals or the radical expressed by the formula NOr.sup.14 where r.sup.3 or r.sup.4 ; r.sup.6 and r.sup.7 or r.sup.9 and r.sup.10 are combined (wherein r.sup.14 denotes hydrogen atom, C.sub.1-6 alkyl radical, C.sub.1-6 alkylcarbonyl radical, or C.sub.1-6 alkylcarbamoyl radical), provided, however, that r.sup.6 may form a double bond in combination with r.sup.3 or r.sup.9 ; k, k' and k" denote 0, 1 or 2, respectively;r.sup.5, r.sup.8 and r.sup.11 each denote hydrogen atom or C.sub.1-6 alkyl radical;When A is ##STR7## however, m denotes 1. Further, A and B, or B and D do not simultaneously denote oxygen atoms or sulfur atoms.)R.sub.2 denotes a phenyl radical (which may be substituted by --Z--r.sup.15 (wherein r.sup.15 denotes hydrogen atom, C.sub.1-6 alkyl radical (which may be substituted by C.sub.1-6 alkoxycarbonyl radicals or halogen atoms), phenyl radicals, cycloalkyl radicals, the pyridyl radicals (which may be substituted by halogen atoms or C.sub.1-6 haloalkyl radicals), C.sub.1-6 alkylcarbamoyl radicals, or C.sub.1-6 alkylcarbonyl radicals; Z denotes oxygen atom, sulfur atom or the radicals expressed by the formula ##STR8## (wherein r.sup.14 denotes hydrogen atom or C.sub.1-6 alkyl radical), C.sub.1-6 alkyl radicals, halogen atoms or nitro radicals), a cycloalkyl radical, a naphthyl radical, a benzthiazolyl radical (which may be substituted by C.sub.1-6 alkoxy radicals or C.sub.1-6 alkylamino radicals or halophenylamino radicals), or a C.sub.1-6 alkyl radical which may be substituted by halogen atoms);its producing processes and an acaricidal composition comprising its compound as active ingredient(s).

3. 发明授权

US6091859A Image data enlarging/smoothing processor 失效
标题翻译：图像数据放大/平滑处理器
公开(公告)号：US6091859A
公开(公告)日：2000-07-18
申请号：US194279
申请日：1994-02-10
申请人： Kenichi Sonobe , Toshifumi Nakamura , Takashi Okabe , Takenori Obara
发明人： Kenichi Sonobe , Toshifumi Nakamura , Takashi Okabe , Takenori Obara
IPC分类号： B41J2/485 , G06T3/40 , H04N1/393 , H04N1/409 , G06K9/32
CPC分类号： G06T3/4007
摘要： Input image data is stored in a register matrix of 7.times.7 in a successive manner. A pattern detecting section detects a black- or white-pixel connective pattern of the reference pixels of a marked pixel. When the reference pixel pattern is a black-pixel connective pattern of 1:n (n=1, 2, 3, . . . ), an enlarging/smoothing processor section interpolates a part of the enlarged marked pixel with black pixels. When it is a white-pixel connective pattern of 1:n (n=1, 2, 3, . . . ), the enlarging/smoothing processor erases a part of the enlarged marked pixel. As a result, the oblique line can be smoothed. The line that is made thick by the smoothing process can be shaped into a thin line. Thus, a high-quality image can be produced.
摘要翻译：输入图像数据以连续的方式存储在7×7的寄存器矩阵中。图案检测部分检测标记像素的参考像素的黑色或白色像素连接图案。当参考像素图案是1：n（n = 1,2,3，...）的黑色像素连接图案时，放大/平滑处理器部分用黑色像素内插放大的标记像素的一部分。当它是1：n（n = 1,2,3，...）的白色像素连接图案时，放大/平滑处理器将擦除放大的标记像素的一部分。结果，斜线可以平滑。通过平滑处理制成厚度的线可以成形为细线。因此，可以产生高质量的图像。

4. 发明授权

US5168030A Positive type o-quinone diazide photo-resist containing antistatic agent selected from hydrazones, ethylcarbazole and bis(dimethylamino)benzene 失效
标题翻译：含有选自腙，乙基咔唑和双（二甲基氨基）苯的抗静电剂的正型邻 - 醌二叠氮光致抗蚀剂
公开(公告)号：US5168030A
公开(公告)日：1992-12-01
申请号：US742513
申请日：1991-08-05
申请人： Konoe Miura , Tameichi Ochiai , Yasuhiro Kameyama , Tooru Koyama , Takashi Okabe , Tomoharu Mametani
发明人： Konoe Miura , Tameichi Ochiai , Yasuhiro Kameyama , Tooru Koyama , Takashi Okabe , Tomoharu Mametani
IPC分类号： G03F7/004 , G03F7/022
CPC分类号： G03F7/0226 , G03F7/004
摘要： Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.
摘要翻译：本文公开了含有抗静电剂的抗静电光致抗蚀剂。由于根据本发明的抗静电光刻胶几乎不充电，因此可以适当地用作将离子注入到半导体衬底中的掩模。

5. 发明申请

US20130008311A1 EXHAUST GAS TREATMENT SYSTEM 失效
标题翻译：排气处理系统
公开(公告)号：US20130008311A1
公开(公告)日：2013-01-10
申请号：US13610131
申请日：2012-09-11
申请人： Tai Ohuchi , Takashi Okabe , Tsuyoshi Asano
发明人： Tai Ohuchi , Takashi Okabe , Tsuyoshi Asano
IPC分类号： B01D53/22
CPC分类号： C01B3/501 , B01D53/22 , B01D2256/16 , B01D2257/553 , B01D2258/0216 , C01B3/503 , C01B33/043 , C01B2203/0405 , C01B2203/0465 , C23C16/4412 , C23C16/52 , F23J15/006 , F23J2215/30 , H01J37/32844 , Y02C20/30 , Y02E60/324
摘要： An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.
摘要翻译：废气处理系统处理从半导体制造设备排出的至少含有氢和甲硅烷的混合气体。排气处理系统包括排出从半导体制造装置排出的混合气体的泵单元，压缩由泵单元排出的混合气体并将混合气体送入后段的压缩机，收集和容纳压缩混合气体，流量控制单元，其控制从气体调节单元供应的混合气体的流量;以及膜分离单元，其使氢气选择性渗透通过其中，从混合气体中分离出甲硅烷和氢气加油站。因此，废气处理系统可以在从半导体制造装置排出的混合气体的压力变化得到缓解的状态下稳定地运行。

6. 发明授权

US4008067A Oxacyclohexane derivatives 失效
标题翻译：氧环己烷衍生物
公开(公告)号：US4008067A
公开(公告)日：1977-02-15
申请号：US581705
申请日：1975-05-28
申请人： Yoshihiko Hirono , Hisao Ishikawa , Isao Iwataki , Mikio Sawaki , Takashi Okabe , Daigaku Takiguchi , Kuniyasu Maeda
发明人： Yoshihiko Hirono , Hisao Ishikawa , Isao Iwataki , Mikio Sawaki , Takashi Okabe , Daigaku Takiguchi , Kuniyasu Maeda
IPC分类号： A01N43/14 , A01N43/16 , A01N43/32 , A01P13/00 , C07D309/32 , C07D309/36 , C07D319/06 , C07D319/04 , A01N9/20
CPC分类号： C07D319/06 , C07D309/32 , C07D309/36
摘要： A compound of the general formula ##STR1## wherein R.sub.1 is lower alkyl,R.sub.2 is selected from the group consisting of lower alkyl, lower alkenyl and lower alkynyl,A is a formula which is selected from the formula consisting of: ##STR2## where R.sub.3 is selected from the group consisting of hydrogen and lower alkyl,R.sub.4 is selected from the group consisting of lower alkyl and phenyl, andR.sub.3 forms cyclo-alkylene of 4 to 5 carbon atoms by combining with R.sub.4 ; ##STR3## where R.sub.5 and R.sub.7 are selected from the group consisting of hydrogen and lower alkyl andR.sub.6 is lower alkyl; and ##STR4## where R.sub.8 is selected from the group consisting of hydrogen and lower alkyl andR.sub.9 is lower alkyl;Or a metal salt of the compound defined herein above is useful as herbicide.
摘要翻译：一种通式为“IMAGE”的化合物，其中R 1为低级烷基，R 2选自低级烷基，低级烯基和低级炔基，A为选自下式的式：）其中R3选自氢和低级烷基，R4选自低级烷基和苯基，R3与R4结合形成4至5个碳原子的环亚烷基; （2）其中R5和R7选自氢和低级烷基，R6是低级烷基; 和（3）其中R8选自氢和低级烷基，R9为低级烷基; 或此处定义的化合物的金属盐有用于除草剂。

7. 发明授权

US08591633B2 Exhaust gas treatment system 失效
标题翻译：废气处理系统
公开(公告)号：US08591633B2
公开(公告)日：2013-11-26
申请号：US13610131
申请日：2012-09-11
申请人： Tai Ohuchi , Takashi Okabe , Tsuyoshi Asano
发明人： Tai Ohuchi , Takashi Okabe , Tsuyoshi Asano
IPC分类号： B01D53/22
CPC分类号： C01B3/501 , B01D53/22 , B01D2256/16 , B01D2257/553 , B01D2258/0216 , C01B3/503 , C01B33/043 , C01B2203/0405 , C01B2203/0465 , C23C16/4412 , C23C16/52 , F23J15/006 , F23J2215/30 , H01J37/32844 , Y02C20/30 , Y02E60/324
摘要： An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.
摘要翻译：废气处理系统处理从半导体制造设备排出的至少含有氢和甲硅烷的混合气体。排气处理系统包括排出从半导体制造装置排出的混合气体的泵单元，压缩由泵单元排出的混合气体并将混合气体送入后段的压缩机，收集和容纳压缩混合气体，流量控制单元，其控制从气体调节单元供应的混合气体的流量;以及膜分离单元，其使氢气选择性渗透通过其中，从混合气体中分离出甲硅烷和氢气加油站。因此，废气处理系统可以在从半导体制造装置排出的混合气体的压力变化得到缓解的状态下稳定地运行。

8. 发明申请

US20120210873A1 EXHAUST GAS PROCESSING APPARATUS AND METHOD FOR PROCESSING EXHAUST GAS 审中-公开
标题翻译：排气处理装置和处理排气的方法
公开(公告)号：US20120210873A1
公开(公告)日：2012-08-23
申请号：US13256026
申请日：2010-03-11
申请人： Ken Samura , Tai Ohuchi , Tsuyoshi Asano , Takashi Okabe
发明人： Ken Samura , Tai Ohuchi , Tsuyoshi Asano , Takashi Okabe
IPC分类号： B01D53/02
CPC分类号： C01B33/04 , B01D53/0462 , B01D53/047 , B01D53/46 , B01D2253/102 , B01D2253/104 , B01D2253/108 , B01D2253/112 , B01D2255/20761 , B01D2256/16 , B01D2257/553 , B01D2258/0216 , B01D2259/40056 , B01D2259/403 , C23C16/4412 , Y02C20/30
摘要： An exhaust gas processing apparatus for processing a mixed gas discharged from a semiconductor manufacturing apparatus is provided with: an adsorption separation unit for separating a monosilane gas that requires abatement and a hydrogen gas that does not require abatement by allowing the mixed gas to pass through and then by mainly adsorbing the monosilane gas among a plurality of types of gases contained in the mixed gas; a heating unit for desorbing the monosilane adsorbed onto the adsorption separation unit; a silane gas abatement unit for abating a monosilane gas desorbed from the adsorption separation unit; and a hydrogen gas discharge unit for discharging a hydrogen gas separated from the mixed gas by the adsorption separation unit.
摘要翻译：一种用于处理从半导体制造装置排出的混合气体的排气处理装置具备：吸附分离部，其通过使混合气体通过而分离需要减少的单硅烷气体和不需要减少的氢气，然后主要在混合气体中所含的多种气体中吸附甲硅烷气体; 用于解吸吸附在吸附分离单元上的单硅烷的加热单元; 用于减轻从吸附分离单元解吸的单硅烷气体的硅烷气体消除单元; 以及用于排出由吸附分离单元从混合气体分离的氢气的氢气排出单元。

9. 发明授权

US4933257A Positive quinone diazide photo-resist composition with antistatic agent 失效
标题翻译：具有抗静电剂的正醌二叠氮光致抗蚀剂组合物
公开(公告)号：US4933257A
公开(公告)日：1990-06-12
申请号：US408956
申请日：1989-09-18
申请人： Konoe Miura , Tameichi Ochiai , Yasuhiro Kameyama , Tooru Koyama , Takashi Okabe , Tomoharu Mametani
发明人： Konoe Miura , Tameichi Ochiai , Yasuhiro Kameyama , Tooru Koyama , Takashi Okabe , Tomoharu Mametani
IPC分类号： G03C1/00 , G03F7/004 , G03F7/022 , H01L21/027
CPC分类号： G03F7/0226 , G03F7/004
摘要： Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.
摘要翻译：本文公开了含有抗静电剂的抗静电光致抗蚀剂。由于根据本发明的抗静电光刻胶几乎不充电，因此可以适当地用作将离子注入到半导体衬底中的掩模。

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