专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06819700B2 Method of manufacturing an external cavity semiconductor laser, external cavity semiconductor laser, and wavelength multiplex transmission system 失效
标题翻译：外腔半导体激光器，外腔半导体激光器和波长复用传输系统的制造方法
公开(公告)号：US06819700B2
公开(公告)日：2004-11-16
申请号：US10215259
申请日：2002-08-09
申请人： Takashi Kato , Jun-ichi Hashimoto , Naoyuki Yamabayashi
发明人： Takashi Kato , Jun-ichi Hashimoto , Naoyuki Yamabayashi
IPC分类号： H01S308
CPC分类号： H01S5/146 , H01L2224/48091 , H01S5/02212 , H01S5/02252 , H01S5/02284 , H01S5/0683 , H01S5/141 , H01S5/147 , H01L2924/00014
摘要： An external cavity semiconductor laser comprises a grating fiber and a semiconductor optical amplification element. The grating fiber has a Bragg grating and an optical waveguide. The Bragg grating has a frequency fFG and exhibits a maximum reflectivity thereat. The Bragg grating is optically coupled to the optical waveguide. In the external cavity semiconductor laser. The grating fiber is determined such that an oscillation frequency fLD satisfies 0
摘要翻译：外腔半导体激光器包括光栅光纤和半导体光放大元件。光栅光纤具有布拉格光栅和光波导。布拉格光栅具有频率fFG并且在其上表现出最大的反射率。布拉格光栅光耦合到光波导。在外腔半导体激光器中。确定光栅光纤使得振荡频率fLD满足根据外腔半导体激光器的结构，在由表达式（1）定义的频率范围内，模式跳变的发生被减少。

2. 发明授权

US06805492B2 Ferrule product, method of making the same, and optical module 失效
标题翻译：套圈产品，制造方法和光学模块
公开(公告)号：US06805492B2
公开(公告)日：2004-10-19
申请号：US10097129
申请日：2002-03-14
申请人： Jun-ichi Hashimoto , Takashi Kato , Manabu Shiozaki , Naoki Karikomi
发明人： Jun-ichi Hashimoto , Takashi Kato , Manabu Shiozaki , Naoki Karikomi
IPC分类号： G02B636
CPC分类号： G02B6/4201 , G02B6/0218 , G02B6/3845 , G02B6/4207 , G02B6/4237 , G02B6/4263 , G02B6/4265 , G02B6/4267 , G02B6/4286
摘要： A ferrule product 30b is utilized in an optical module 5 comprising a semiconductor optical amplifier 55 having a pair of end facets. The ferrule product 30b comprises an optical fiber 51 and a ferrule 52. The optical fiber 51 has one end part, optically coupled with one of the pair of end facets, a first part including a grating 511 disposed at a predetermined position separated from one end part, and a second part different from the first part. The ferrule 52 has a capillary part 521 for holding the optical fiber 51 and a flange part 522 for holding the capillary part. The flange part 522 is disposed on the second part.
摘要翻译：套圈产品30b用于包括具有一对端面的半导体光放大器55的光学模块5中。套圈产品30b包括光纤51和套圈52.光纤51具有一个端部，与一对端面中的一个光学耦合，第一部分包括设置在与一端分离的预定位置的光栅511 部分，第二部分与第一部分不同。套圈52具有用于保持光纤51的毛细管部521和用于保持毛细管部的凸缘部522。凸缘部522设置在第二部分上。

3. 发明授权

US07838893B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07838893B2
公开(公告)日：2010-11-23
申请号：US11232242
申请日：2005-09-22
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01L29/00
CPC分类号： H01S5/18308 , H01L33/02 , H01L33/105 , H01S5/18341 , H01S5/18358 , H01S5/3211 , H01S5/3235 , H01S2301/173
摘要： A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer. The second region of the first semiconductor portion of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. A bandgap energy of the potential adjusting semiconductor layer is different from bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region.
摘要翻译：半导体光学器件包括第一导电类型半导体区域，设置在第一导电类型半导体区域的第二半导体部分上的有源层，在有源层的侧面和顶部上的第二导电类型半导体区域，第二导电类型半导体区域半导体部分和第一导电类型半导体区域的第一半导体部分的第二区域，设置在第一导电类型半导体区域的第二半导体部分和有源层之间的电位调节半导体层，以及第一和第二分布布拉格反射器设置有第一导电型半导体区域，有源层和第二导电型半导体区域的部分。第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。第一导电型半导体区域和第二导电型半导体区域的第一半导体部分的第二区域构成pn结。电位调整用半导体层的带隙能不同于第一导电型半导体区域和第二导电型半导体区域的带隙能量。

4. 发明申请

US20090323749A1 LIGHT-EMITTING DEVICE WITH DOUBLE INTERMEDIATE LAYERS BETWEEN MESA STRIPE AND IRON-DOPED CURRENT BLOCKING LAYER 有权
标题翻译：具有MESA条纹和铁电流阻塞层之间的双重中间层的发光装置
公开(公告)号：US20090323749A1
公开(公告)日：2009-12-31
申请号：US12488029
申请日：2009-06-19
申请人： Jun-ichi Hashimoto
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2004 , H01S5/222 , H01S5/2222 , H01S5/2224 , H01S5/2275 , H01S5/3072 , H01S5/34306
摘要： A light-emitting device that reduces the leak current flowing along the sides of the mesa stripe is disclosed. The device provides the mesa stripe, the current blocking layer, and two intermediate layers put between the mesa stripe and the current blocking layer. One of intermediate layers has the p-type conduction and comes in directly contact with the mesa stripe, while, the other intermediate layer has the n-type conduction and put between the former intermediate layer and the current blocking layer. The double intermediate layers prevent impurities in the current blocking layer and in the mesa stripe from inter-diffusing each other.
摘要翻译：公开了一种减少沿着台面条的侧面流动的漏电流的发光装置。该设备提供台面条带，当前阻挡层和放置在台面条和当前阻挡层之间的两个中间层。中间层之一具有p型导电并与台面条直接接触，而另一个中间层具有n型导电并放置在前一中间层和电流阻挡层之间。双重中间层防止了电流阻挡层和台面条中的杂质相互扩散。

5. 发明授权

US07305017B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07305017B2
公开(公告)日：2007-12-04
申请号：US11363265
申请日：2006-02-28
申请人： Jun-ichi Hashimoto
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/24 , H01S5/0207 , H01S5/1053 , H01S5/3202 , H01S5/3404 , H01S2301/14
摘要： In a semiconductor optical device, the semiconductor substrate has a primary surface intersecting with a predetermined axis. The lower cladding region of the first conductive type is provided on the primary surface thereof. The lower cladding region includes ridge regions and a base region. The base region has first portions and second portions. The first portions and the second portions are alternately arranged along a predetermined plane perpendicular to the predetermined axis. Each first portion extends in an optical propagating direction. Each second portion extends in the optical propagating direction. Each ridge region is located on each second portion. Each ridge region has a side and a top, and each first portion has a top. The upper cladding layer of the second conductive type is provided on the primary surface of the semiconductor substrate. The bulk active layer is provided between the upper cladding layer and the lower cladding region. The bulk active layer includes first portions, second portions and third portions. Each first portion of the bulk active layer is located on each first portion of the base region of the lower cladding region. Each second portion of the bulk active layer is located on the top of each ridge region and each third portion of the bulk active layer is located on the side of the ridge region.
摘要翻译：在半导体光学器件中，半导体衬底具有与预定轴线相交的主表面。第一导电类型的下包层区域设置在其主表面上。下包层区域包括脊区域和基底区域。基部区域具有第一部分和第二部分。第一部分和第二部分沿着垂直于预定轴线的预定平面交替布置。每个第一部分在光学传播方向上延伸。每个第二部分在光学传播方向上延伸。每个脊区域位于每个第二部分上。每个脊区域具有侧面和顶部，并且每个第一部分具有顶部。第二导电类型的上包层设置在半导体衬底的主表面上。本体有源层设置在上包层和下包层区域之间。本体活性层包括第一部分，第二部分和第三部分。体积活性层的每个第一部分位于下部包层区域的基底区域的每个第一部分上。本体有源层的每个第二部分位于每个脊区域的顶部，并且大体活性层的每个第三部分位于脊区域的一侧。

6. 发明申请

US20070215904A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20070215904A1
公开(公告)日：2007-09-20
申请号：US11716682
申请日：2007-03-12
申请人： Jun-ichi Hashimoto
发明人： Jun-ichi Hashimoto
IPC分类号： H01L31/00
CPC分类号： H01S5/3235 , B82Y20/00 , H01S5/3211 , H01S5/3213 , H01S5/32366 , H01S5/34306
摘要： A semiconductor optical device includes a GaAs substrate of a first conductivity type; a III-V compound semiconductor layer provided on the GaAs substrate; an active layer provided on the III-V compound semiconductor layer; and a cladding layer of a second conductivity type provided on the active layer, wherein the band gap energy of the III-V compound semiconductor layer is larger than the band gap energy of the GaAs substrate, wherein the band gap energy of the active layer is smaller than the band gap energy of the GaAs substrate, and wherein the thickness of the III-V compound semiconductor layer is not more than 0.2 μm.
摘要翻译：半导体光学器件包括第一导电类型的GaAs衬底; 设置在GaAs衬底上的III-V族化合物半导体层; 设置在III-V族化合物半导体层上的有源层; 以及设置在所述有源层上的第二导电类型的覆层，其中所述III-V族化合物半导体层的带隙能量大于所述GaAs衬底的带隙能量，其中所述有源层的带隙能量为小于GaAs衬底的带隙能量，并且其中III-V族化合物半导体层的厚度不大于0.2μm。

7. 发明申请

US20060043408A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20060043408A1
公开(公告)日：2006-03-02
申请号：US11210110
申请日：2005-08-24
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01S5/227
摘要： In a semiconductor optical device, a first conductive type semiconductor region includes first and second semiconductor portions. The first and second semiconductor portions are made of nitride mixed semiconductor crystal. This first semiconductor portion has a first region and a second region. The second semiconductor portion is provided on the first region of the first semiconductor portion. A second conductive type semiconductor region is made of nitride mixed semiconductor crystal. The second conductive type semiconductor region includes a first region and a second region. This second region of the first semiconductor portion of the first conductive type semiconductor region and the second region of the second conductive type semiconductor region constitute a pn junction. The sides of the second semiconductor portion of the first conductive type semiconductor region and the second region of the second conductive type semiconductor region constitute a pn junction. An active layer is made of nitride mixed semiconductor crystal. The active layer is provided between the second semiconductor portion of the first conductive type semiconductor region and the first region of the second conductive type semiconductor region. The bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region are greater than that of the active layer.
摘要翻译：在半导体光学器件中，第一导电型半导体区域包括第一和第二半导体部分。第一和第二半导体部分由氮化物混合半导体晶体制成。该第一半导体部分具有第一区域和第二区域。第二半导体部分设置在第一半导体部分的第一区域上。第二导电型半导体区域由氮化物混合半导体晶体制成。第二导电型半导体区域包括第一区域和第二区域。第一导电型半导体区域的第一半导体部分的第二区域和第二导电型半导体区域的第二区域构成pn结。第一导电型半导体区域的第二半导体部分和第二导电类型半导体区域的第二区域的侧面构成pn结。有源层由氮化物混合半导体晶体制成。有源层设置在第一导电型半导体区域的第二半导体部分和第二导电类型半导体区域的第一区域之间。第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。

8. 发明申请

US20050220392A1 Optical integrated device 审中-公开
标题翻译：光学集成器件
公开(公告)号：US20050220392A1
公开(公告)日：2005-10-06
申请号：US11091719
申请日：2005-03-29
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama , Kenji Koyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama , Kenji Koyama
IPC分类号： H01S5/026 , G02B6/12 , H01S5/223 , H01S5/227 , H01S5/343
CPC分类号： H01S5/026 , B82Y20/00 , G02B6/12004 , H01S5/0265 , H01S5/2206 , H01S5/2272 , H01S5/32358 , H01S5/32366 , H01S5/34306 , H01S5/3434 , H01S5/50
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers, these layers are disposed on the GaAs substrate. The GaAs substrate provides first to third regions. The active layer includes first to third active layers disposed on respective regions of the substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the third active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译：本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。本发明的光集成器件包括GaAs衬底，第一和第二覆层以及由第一和第二覆层夹持的有源层，这些层设置在GaAs衬底上。 GaAs衬底提供第一至第三区域。有源层包括设置在衬底的相应区域上的第一至第三有源层。第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第三有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。

9. 发明申请

US20050135450A1 Semiconductor surface emitting device 有权
标题翻译：半导体表面发射器件
公开(公告)号：US20050135450A1
公开(公告)日：2005-06-23
申请号：US10822142
申请日：2004-04-12
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/323
CPC分类号： H01S5/18308 , H01S5/2209 , H01S5/222 , H01S5/3211 , H01S5/32366
摘要： This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.
摘要翻译：该表面发射半导体器件1包括第一导电类型半导体区域，有源层，第二导电类型半导体层和电流块半导体区域。第一导电型半导体区域设置在由GaAs半导体制成的表面上。有源层设置在第一导电类型半导体区域上。活性层具有侧表面。第二导电类型半导体层设置在有源层上。第二导电型半导体层具有侧面。当前块半导体区域设置在有源层的侧表面和第二导电类型半导体层的侧表面上。有源层由至少包含氮元素作为V族元素的III-V族化合物半导体制成。

10. 发明授权

US6067310A Semiconductor laser and method of making the same 失效
标题翻译：半导体激光器及其制作方法
公开(公告)号：US6067310A
公开(公告)日：2000-05-23
申请号：US924502
申请日：1997-09-05
申请人： Jun-ichi Hashimoto , Michio Murata , Nobuyuki Ikoma , Jiro Fukui
发明人： Jun-ichi Hashimoto , Michio Murata , Nobuyuki Ikoma , Jiro Fukui
IPC分类号： H01S5/00 , H01S5/16 , H01S5/323 , H01S5/343 , H01S3/19 , H01L21/20
CPC分类号： H01S5/164 , H01S5/162
摘要： In the present method, at the time when a semiconductor laser is being made, nitrogen or phosphorus element is introduced into an active layer comprising a GaAs based compound from an end face thereof, thereby changing the region of the active layer in the vicinity of the end face into a GaN or GaP based compound. Accordingly, the energy band gap of this region is made wider than the energy band gap within the active layer, and thus substituted region is changed into a layer transparent to the laser light generated within the active layer. Thus, the end face can be prevented from deteriorating upon the temperature rise caused by laser light absorption at the end face.
摘要翻译：在本方法中，在制造半导体激光器的时候，将氮或磷元素从其端面引入到包含GaAs基化合物的有源层中，从而改变有源层的附近的区域端面形成GaN或GaP基化合物。因此，该区域的能带隙比活性层内的能带隙宽，因此，取代区域变为对有源层内产生的激光透明的层。因此，可以防止由于端面处的激光吸收引起的温度上升而导致端面劣化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式