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1. 发明授权

US11527406B2 Trench etching process for photoresist line roughness improvement 有权
公开(公告)号：US11527406B2
公开(公告)日：2022-12-13
申请号：US16742433
申请日：2020-01-14
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
发明人： Sheng-Lin Hsieh , I-Chih Chen , Ching-Pei Hsieh , Kuan Jung Chen
IPC分类号： H01L21/027 , H01L21/033 , H01L21/768
摘要： A method of forming a semiconductor device structure is provided. The method includes forming a resist structure over a substrate. The resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer. The hydrogen plasma treatment is configured to smooth sidewalls of the trench without etching the ARC layer. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.

2. 发明授权

US10158069B2 Memory cell having resistance variable film and method of making the same 有权
公开(公告)号：US10158069B2
公开(公告)日：2018-12-18
申请号：US15817916
申请日：2017-11-20
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Pei Hsieh , Chia-Shiung Tsai , Chern-Yow Hsu , Fu-Ting Sung , Shih-Chang Liu
IPC分类号： H01L45/00
摘要： A manufacture includes a first electrode having an upper surface and a side surface, a resistance variable film over the first electrode, and a second electrode over the resistance variable film. The resistance variable film extends along the upper surface and the side surface of the first electrode. The second electrode has a side surface. A portion of the side surface of the first electrode and a portion of the side surface of the second electrode sandwich a portion of the resistance variable film.

3. 发明申请

US20160351803A1 Resistance Variable Memory Structure and Method of Forming the Same 审中-公开
公开(公告)号：US20160351803A1
公开(公告)日：2016-12-01
申请号：US15237387
申请日：2016-08-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Fu-Ting Sung , Ching-Pei Hsieh , Chia-Shiung Tsai , Chern-Yow Hsu , Shih-Chang Liu
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1666 , H01L45/1683
摘要： A memory structure includes a first dielectric layer, having a first top surface, over a conductive structure. A first opening in the first dielectric layer exposes an area of the conductive structure, and has an interior sidewall. A first electrode structure, having a first portion and a second portion, is over the exposed area of the conductive structure. The second portion extends upwardly along the interior sidewall. A resistance variable layer is disposed over the first electrode. A second electrode structure, having a third portion and a fourth portion, is over the resistance variable layer. The third portion has a second top surface below the first top surface of the first dielectric layer. The fourth portion extends upwardly along the resistance variable layer. A second opening is defined by the second electrode structure. At least a part of a second dielectric layer is disposed in the second opening.

4. 发明申请

US20180090680A1 Memory Cell Having Resistance Variable Film and Method of Making the Same 审中-公开
公开(公告)号：US20180090680A1
公开(公告)日：2018-03-29
申请号：US15817916
申请日：2017-11-20
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Pei Hsieh , Chia-Shiung Tsai , Chern-Yow Hsu , Fu-Ting Sung , Shih-Chang Liu
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1226 , H01L45/146 , H01L45/16
摘要： A manufacture includes a first electrode having an upper surface and a side surface, a resistance variable film over the first electrode, and a second electrode over the resistance variable film. The resistance variable film extends along the upper surface and the side surface of the first electrode. The second electrode has a side surface. A portion of the side surface of the first electrode and a portion of the side surface of the second electrode sandwich a portion of the resistance variable film.

5. 发明授权

US09837606B2 Resistance variable memory structure and method of forming the same 有权
公开(公告)号：US09837606B2
公开(公告)日：2017-12-05
申请号：US15237387
申请日：2016-08-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Fu-Ting Sung , Ching-Pei Hsieh , Chia-Shiung Tsai , Chern-Yow Hsu , Shih-Chang Liu
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1666 , H01L45/1683
摘要： A memory structure includes a first dielectric layer, having a first top surface, over a conductive structure. A first opening in the first dielectric layer exposes an area of the conductive structure, and has an interior sidewall. A first electrode structure, having a first portion and a second portion, is over the exposed area of the conductive structure. The second portion extends upwardly along the interior sidewall. A resistance variable layer is disposed over the first electrode. A second electrode structure, having a third portion and a fourth portion, is over the resistance variable layer. The third portion has a second top surface below the first top surface of the first dielectric layer. The fourth portion extends upwardly along the resistance variable layer. A second opening is defined by the second electrode structure. At least a part of a second dielectric layer is disposed in the second opening.

6. 发明授权

US08872149B1 RRAM structure and process using composite spacer 有权
标题翻译： RRAM结构和使用复合间隔的工艺
公开(公告)号：US08872149B1
公开(公告)日：2014-10-28
申请号：US13954430
申请日：2013-07-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Pei Hsieh , Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L45/146 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/1675
摘要： A memory cell and method includes a first electrode formed in an opening in a first dielectric layer, the first dielectric layer being formed on a substrate including a metal layer, the opening being configured to allow physical contact between the first electrode and the metal layer, the first electrode having a first width W1 and extending a distance beyond a region defined by the opening, a resistive layer formed on the first electrode and having substantially the first width W1, a capping layer, having a second width W2 less than the first width W1, formed on the resistive layer, a second electrode formed on the capping layer and having substantially the second width W2, a first composite spacer region having at least two different dielectric layers formed on the resistive layer between the first width W1 and the second width W2, and a via coupled to the second electrode.
摘要翻译：存储单元和方法包括形成在第一电介质层的开口中的第一电极，所述第一介电层形成在包括金属层的基板上，所述开口被配置为允许所述第一电极和所述金属层之间的物理接触，所述第一电极具有第一宽度W1并且延伸超过由所述开口限定的区域的距离;形成在所述第一电极上并且具有基本上第一宽度W1的电阻层，覆盖层，具有小于所述第一宽度的第二宽度W2 W1，形成在电阻层上，形成在覆盖层上并具有基本上第二宽度W2的第二电极，第一复合间隔区，其具有形成在电阻层上的第一宽度W1和第二宽度之间的至少两个不同电介质层 W2和连接到第二电极的通孔。

7. 发明授权

US11018299B2 Memory cell having resistance variable film and method of making the same 有权
公开(公告)号：US11018299B2
公开(公告)日：2021-05-25
申请号：US16713731
申请日：2019-12-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Pei Hsieh , Chia-Shiung Tsai , Chern-Yow Hsu , Fu-Ting Sung , Shih-Chang Liu
IPC分类号： H01L45/00
摘要： A manufacture includes a first electrode having an upper surface and a side surface, a resistance variable film over the first electrode, and a second electrode over the resistance variable film. The resistance variable film extends along the upper surface and the side surface of the first electrode. The second electrode has a side surface. A portion of the side surface of the first electrode and a portion of the side surface of the second electrode sandwich a portion of the resistance variable film.

8. 发明授权

US09466794B2 Low form voltage resistive random access memory (RRAM) 有权
标题翻译：低电阻电阻随机存取存储器（RRAM）
公开(公告)号：US09466794B2
公开(公告)日：2016-10-11
申请号：US14987621
申请日：2016-01-04
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chin-Chieh Yang , Wen-Ting Chu , Yu-Wen Liao , Chih-Yang Chang , Hsia-Wei Chen , Kuo-Chi Tu , Ching-Pei Hsieh
IPC分类号： H01L21/20 , H01L21/311 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.
摘要翻译：本公开提供了一种电阻随机存取存储器（RRAM）单元及其制造方法。 RRAM单元包括晶体管和RRAM结构。 RRAM结构包括具有通孔部分和非平面部分的底部电极，保形地覆盖底部电极的非平面部分的电阻材料层; 以及电阻材料层上的顶部电极。底部电极的通孔部分嵌入第一RRAM停止层。底部电极的非平面部分具有顶点并且在通孔部分上方居中。

9. 发明申请

US20160118584A1 Low Form Voltage Resistive Random Access Memory (RRAM) 审中-公开
标题翻译：低压电阻随机存取存储器（RRAM）
公开(公告)号：US20160118584A1
公开(公告)日：2016-04-28
申请号：US14987621
申请日：2016-01-04
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chin-Chieh Yang , Wen-Ting Chu , Yu-Wen Liao , Chih-Yang Chang , Hsia-Wei Chen , Kuo-Chi Tu , Ching-Pei Hsieh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.
摘要翻译：本公开提供了一种电阻随机存取存储器（RRAM）单元及其制造方法。 RRAM单元包括晶体管和RRAM结构。 RRAM结构包括具有通孔部分和非平面部分的底部电极，保形地覆盖底部电极的非平面部分的电阻材料层; 以及电阻材料层上的顶部电极。底部电极的通孔部分嵌入第一RRAM停止层。底部电极的非平面部分具有顶点并且在通孔部分上方居中。

10. 发明申请

US20150147864A1 ONE TRANSISTOR AND ONE RESISTIVE (1T1R) RANDOM ACCESS MEMORY (RAM) STRUCTURE WITH DUAL SPACERS 审中-公开
标题翻译：一个晶体管和一个电阻（1T1R）随机访问存储器（RAM）结构与双重间隔
公开(公告)号：US20150147864A1
公开(公告)日：2015-05-28
申请号：US14607955
申请日：2015-01-28
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yu-Wen Liao , Wen-Ting Chung-Shi , Kuo-Chi Tu , Chih-Yang Chang , Chin-Chieh Yang , Hsia-Wei Chen , Ching-Pei Hsieh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1675
摘要： The present disclosure provides methods of making resistive random access memory (RRAM) cells. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode, a first spacer surrounding the capping layer and a top electrode, a second spacer surround the top portion of the bottom electrode and the first spacer, and the top electrode. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.
摘要翻译：本公开提供了制造电阻随机存取存储器（RRAM）单元的方法。 RRAM单元包括晶体管和RRAM结构。 RRAM结构包括具有通孔部分和顶部部分的底部电极，底部电极上的电阻材料层具有与底部电极的顶部部分的宽度相同的宽度; 覆盖在所述底部电极上的覆盖层，围绕所述覆盖层的第一间隔物和顶部电极，围绕所述底部电极和所述第一间隔物的顶部以及所述顶部电极的第二间隔物。 RRAM单元还包括将RRAM结构的顶部电极连接到金属层的导电材料。

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