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1. 发明申请

US20150161321A1 POLYGON-BASED OPTICAL PROXIMITY CORRECTION 有权
标题翻译：基于POLYGON的光学近似校正
公开(公告)号：US20150161321A1
公开(公告)日：2015-06-11
申请号：US14102350
申请日：2013-12-10
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Wen-Li Cheng , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Cheng-Lung Tsai , Sheng-Wen Lin , Kuei-Liang Lu , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36
摘要： Methods and systems for design of integrated circuits including performing OPC are discussed. In one embodiment, design data having a geometric feature is provided. A base feature is formed from the geometric feature, which has a substantially linear edge. A pseudo dissection point is determined on the base feature. Add or trim a polygon from the base feature to form a modified feature. An OPC process is performed on the modified feature to generate an output design. The output design is used to fabricate a semiconductor device on a semiconductor substrate.
摘要翻译：讨论了包括执行OPC在内的集成电路设计的方法和系统。在一个实施例中，提供具有几何特征的设计数据。基本特征由具有基本线性边缘的几何特征形成。在基本特征上确定伪解剖点。从基本特征添加或修剪多边形以形成修改的特征。对修改的特征进行OPC处理以产生输出设计。输出设计用于在半导体衬底上制造半导体器件。

2. 发明授权

US09390217B2 Methodology of optical proximity correction optimization 有权
标题翻译：光学邻近校正优化方法
公开(公告)号：US09390217B2
公开(公告)日：2016-07-12
申请号：US14143677
申请日：2013-12-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50 , G03F1/36 , G03F1/70
CPC分类号： G06F17/5081 , G03F1/36 , G03F1/70
摘要： A method for performing optical proximity correction (OPC) and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first OPC modification to a mask feature of the design database is made by performing a first OPC process. The OPC process includes: dividing the mask feature into child shapes and adjusting an attribute of a child shape based on an edge placement error (EPE) factor. A first lithography simulation is performed utilizing a first set of performance indexes after making the first OPC modification, and a second OPC modification to the mask feature is made based on a result of the first lithography simulation. A second lithography simulation of the mask feature is performed utilizing a second set of performance indexes to verify the first and second OPC modifications, and the design database is provided for manufacturing.
摘要翻译：公开了一种执行光学邻近校正（OPC）和评估OPC解决方案的方法。一种示例性方法包括接收对应于IC电路掩码的设计数据库。通过执行第一个OPC过程来对设计数据库的掩码特征进行第一个OPC修改。 OPC过程包括：基于边缘放置误差（EPE）因子将掩模特征划分为子形状并调整子形状的属性。在进行第一OPC修改之后，利用第一组性能指标执行第一光刻模拟，并且基于第一光刻模拟的结果对掩模特征进行第二OPC修改。使用第二组性能指标来执行掩模特征的第二光刻仿真以验证第一和第二OPC修改，并且为设计数据库提供制造。

3. 发明申请

US20150143304A1 Target Point Generation for Optical Proximity Correction 有权
标题翻译：光学邻近校正的目标点生成
公开(公告)号：US20150143304A1
公开(公告)日：2015-05-21
申请号：US14081521
申请日：2013-11-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Hui Chih , Wen-Li Cheng , Yu-Po Tang , Ping-Chieh Wu , Chia-Ping Chiang , Yong-Cheng Lin , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G03F7/70441
摘要： A method performed by a computer processing system includes receiving a design pattern for an integrated circuit, applying a function to the design pattern to generate a model contour, generating a plurality of Optical Proximity Correction (OPC) target points along the model contour, adjusting the design pattern to create an adjusted pattern, and performing a simulation on the adjusted pattern to create a simulated contour.
摘要翻译：由计算机处理系统执行的方法包括：接收集成电路的设计模式，向设计模式应用功能以产生模型轮廓，沿着模型轮廓生成多个光学邻近校正（OPC）目标点，调整设计图案，以创建调整图案，并对经调整的图案进行模拟以创建模拟轮廓。

4. 发明申请

US20140109026A1 Novel Methodology of Optical Proximity Correction Optimization 有权
标题翻译：光学接近校正优化的新方法
公开(公告)号：US20140109026A1
公开(公告)日：2014-04-17
申请号：US14143677
申请日：2013-12-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F1/70
摘要： A method for performing optical proximity correction (OPC) and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first OPC modification to a mask feature of the design database is made by performing a first OPC process. The OPC process includes: dividing the mask feature into child shapes and adjusting an attribute of a child shape based on an edge placement error (EPE) factor. A first lithography simulation is performed utilizing a first set of performance indexes after making the first OPC modification, and a second OPC modification to the mask feature is made based on a result of the first lithography simulation. A second lithography simulation of the mask feature is performed utilizing a second set of performance indexes to verify the first and second OPC modifications, and the design database is provided for manufacturing.
摘要翻译：公开了一种执行光学邻近校正（OPC）和评估OPC解决方案的方法。一种示例性方法包括接收对应于IC电路掩码的设计数据库。通过执行第一个OPC过程来对设计数据库的掩码特征进行第一个OPC修改。 OPC过程包括：基于边缘放置误差（EPE）因子将掩模特征划分为子形状并调整子形状的属性。在进行第一OPC修改之后，利用第一组性能指标执行第一光刻模拟，并且基于第一光刻模拟的结果对掩模特征进行第二OPC修改。使用第二组性能指标来执行掩模特征的第二光刻仿真以验证第一和第二OPC修改，并且为设计数据库提供制造。

5. 发明授权

US09189588B2 Polygon-based optical proximity correction 有权
标题翻译：基于多边形的光学邻近校正
公开(公告)号：US09189588B2
公开(公告)日：2015-11-17
申请号：US14102350
申请日：2013-12-10
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Wen-Li Cheng , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Cheng-Lung Tsai , Sheng-Wen Lin , Kuei-Liang Lu , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36
摘要： Methods and systems for design of integrated circuits including performing OPC are discussed. In one embodiment, design data having a geometric feature is provided. A base feature is formed from the geometric feature, which has a substantially linear edge. A pseudo dissection point is determined on the base feature. Add or trim a polygon from the base feature to form a modified feature. An OPC process is performed on the modified feature to generate an output design. The output design is used to fabricate a semiconductor device on a semiconductor substrate.
摘要翻译：讨论了包括执行OPC在内的集成电路设计的方法和系统。在一个实施例中，提供具有几何特征的设计数据。基本特征由具有基本线性边缘的几何特征形成。在基本特征上确定伪解剖点。从基本功能添加或修剪多边形以形成修改的功能。对修改的特征进行OPC处理以产生输出设计。输出设计用于在半导体衬底上制造半导体器件。

6. 发明授权

US09165095B2 Target point generation for optical proximity correction 有权
标题翻译：光学邻近校正的目标点生成
公开(公告)号：US09165095B2
公开(公告)日：2015-10-20
申请号：US14081521
申请日：2013-11-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Hui Chih , Wen-Li Cheng , Yu-Po Tang , Ping-Chieh Wu , Chia-Ping Chiang , Yong-Cheng Lin , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G03F7/70441
摘要： A method performed by a computer processing system includes receiving a design pattern for an integrated circuit, applying a function to the design pattern to generate a model contour, generating a plurality of Optical Proximity Correction (OPC) target points along the model contour, adjusting the design pattern to create an adjusted pattern, and performing a simulation on the adjusted pattern to create a simulated contour.
摘要翻译：由计算机处理系统执行的方法包括：接收集成电路的设计模式，向设计模式应用功能以产生模型轮廓，沿着模型轮廓生成多个光学邻近校正（OPC）目标点，调整设计图案，以创建调整图案，并对经调整的图案进行模拟以创建模拟轮廓。

7. 发明授权

US09026957B2 Method of defining an intensity selective exposure photomask 有权
标题翻译：定义强度选择性曝光光掩模的方法
公开(公告)号：US09026957B2
公开(公告)日：2015-05-05
申请号：US14188953
申请日：2014-02-25
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Chu Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G06F17/50 , G03F1/00 , G03F1/68
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.
摘要翻译：提供了一种确定光掩模图案的前馈方法的实施例。该方法包括提供与集成电路装置相关联的设计数据。基于设计数据预测用于制造集成电路器件的涂层的厚度。该预测用于生成渐变图案。形成具有渐变图案的光掩模。

8. 发明授权

US10866397B2 Microscope apparatus 有权
公开(公告)号：US10866397B2
公开(公告)日：2020-12-15
申请号：US16395101
申请日：2019-04-25
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Fu-Sheng Chu , Chih-Shiang Chou , Yu-Po Tang , Yan-Ying He
IPC分类号： G02B21/14 , G02B21/36 , G02B26/06
CPC分类号： G02B21/14 , G02B21/36 , G02B26/06
摘要： A microscope apparatus including an electromagnetic wave source configured to generate an illuminating electromagnetic wave. The microscope apparatus includes a first beam splitter configured to split the illuminating electromagnetic wave into a first component along a first path and a second component along a second path. The microscope apparatus includes a movable reflector module configured to adjust the second path. The microscope apparatus includes a second beam splitter configured to recombine the first component and the second component. The microscope apparatus includes an observing device arranged along the first path and configured to receive the recombined first component and second component. The microscope apparatus is configured to acquire, from the observing device, a phase image based on positioning of the movable reflector module and representative of an electric field distribution near an object located along the first path between the first beam splitter and the second beam splitter.

9. 发明授权

US10295813B2 Microscope apparatus and method for phase image acquisition 有权
公开(公告)号：US10295813B2
公开(公告)日：2019-05-21
申请号：US14559492
申请日：2014-12-03
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Fu-Sheng Chu , Chih-Shiang Chou , Yu-Po Tang , Yan-Ying He
IPC分类号： G02B21/14 , G02B21/36 , G02B26/06
摘要： A microscope apparatus includes an electromagnetic wave source configured to generate an illuminating electromagnetic wave, a first beam splitter configured to split the illuminating electromagnetic wave into a first component along a first path and a second component along a second path, a movable reflector module configured to adjust a portion of the second path, and a second beam splitter configured to recombine the first component and the second component. An observing device is configured to receive the recombined first component and second component and the microscope apparatus is configured acquire a phase image from the observing device based on positioning of the movable reflector module and representative of an electric field distribution near an object located along the first path between the first beam splitter and the second beam splitter.

10. 发明授权

US08806392B2 Distinguishable IC patterns with encoded information 有权
标题翻译：具有编码信息的不可区分的IC模式
公开(公告)号：US08806392B2
公开(公告)日：2014-08-12
申请号：US13692845
申请日：2012-12-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Shih-Ming Chang , Tzu-Chin Lin , Jen-Chieh Lo , Yu-Po Tang , Tsong-Hua Ou
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F17/5068 , G06F2217/12 , H01L23/544 , H01L27/0207 , H01L2223/54426 , H01L2223/54433 , H01L2223/54453 , H01L2924/0002 , Y02P90/265 , H01L2924/00
摘要： A method of designing an IC design layout having similar patterns filled with a plurality of indistinguishable dummy features, in a way to distinguish all the patterns, and an IC design layout so designed. To distinguish each pattern in the layout, deviations in size and/or position from some predetermined equilibrium values are encoded into a set of selected dummy features in each pattern at the time of creating dummy features during the design stage. By identifying such encoded dummy features and measuring the deviations from image information provided by, for example, a SEM picture of a wafer or photomask, the corresponding pattern can be located in the IC layout. For quicker and easier identification of the encoded dummy features from a given pattern, a set of predetermined anchor dummy features may be used.
摘要翻译：一种设计具有填充有多个不可区分的虚拟特征的相似图案的IC设计布局的方法，以区分所有图案的方式以及如此设计的IC设计布局。为了区分布局中的每个图案，在设计阶段期间在创建虚拟特征时，将尺寸和/或位置与某些预定平衡值的偏差编码为每个图案中的一组选定的虚拟特征。通过识别这种编码的虚拟特征并测量由例如晶片或光掩模的SEM照片提供的图像信息的偏差，相应的图案可以位于IC布局中。为了从给定图案更快速和更容易地识别编码的虚拟特征，可以使用一组预定的锚虚拟特征。

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