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1. 发明授权

US08736012B2 Trenched semiconductor structure 有权
标题翻译：半导体结构薄
公开(公告)号：US08736012B2
公开(公告)日：2014-05-27
申请号：US13737252
申请日：2013-01-09
申请人： Taiwan Semiconductor Co., Ltd.
发明人： Chao-Hsin Huang , Chih-Chiang Chuang
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L21/26586 , H01L29/0661 , H01L29/407 , H01L29/47 , H01L29/8725
摘要： A trenched semiconductor structure comprises a semiconductor substrate, an epitaxial layer, an ion implantation layer, a termination region dielectric layer, an active region dielectric layer, and a first polysilicon layer. The epitaxial layer doped with impurities of a first conductive type is formed on the semiconductor substrate. A plurality of active region trenches and a termination region trench are formed in the epitaxial layer. The ion implantation layer is formed in the active region trenches by doping impurities of a second conductive type. The termination region dielectric layer covers the termination region trench. The active region dielectric layer covers the ion implantation region. The first polysilicon layer covers the active region dielectric layer and fills the active region trenches. The depth of the termination region trench is greater than that of the active region trenches and close to that of the depletion region under reverse breakdown.
摘要翻译：沟槽半导体结构包括半导体衬底，外延层，离子注入层，终端区介电层，有源区介电层和第一多晶硅层。掺杂有第一导电类型的杂质的外延层形成在半导体衬底上。在外延层中形成多个有源区沟槽和端接区沟槽。离子注入层通过掺杂第二导电类型的杂质形成在有源区沟槽中。端接区介电层覆盖端接区沟槽。有源区介电层覆盖离子注入区。第一多晶硅层覆盖有源区介电层并填充有源区沟槽。端接区沟槽的深度大于有源区沟槽的深度，并且靠近反向击穿时的耗尽区的深度。

2. 发明授权

US08779545B2 Semiconductor structure with dispersedly arranged active region trenches 有权
标题翻译：具有分散布置的有源区沟槽的半导体结构
公开(公告)号：US08779545B2
公开(公告)日：2014-07-15
申请号：US13737233
申请日：2013-01-09
申请人： Taiwan Semiconductor Co., Ltd.
发明人： Chao-Hsin Huang , Chih-Chiang Chuang
IPC分类号： H01L29/06
CPC分类号： H01L29/0692 , H01L21/26586 , H01L29/47 , H01L29/8725
摘要： A semiconductor structure with dispersedly arranged active region trenches is provided. The semiconductor structure comprises a semiconductor substrate, an epitaxial layer, and an active region dielectric layer. The semiconductor substrate is doped with impurities of a first conductive type having a first impurity concentration. The epitaxial layer is doped with impurities of the first conductive type having a second impurity concentration and is formed on the semiconductor substrate. The epitaxial layer has a plurality of active region trenches formed therein being arranged in a dispersed manner. The active region dielectric layer covers a bottom and a sidewall of the active region trenches. Wherein, the active region trench has an opening in a tetragonal shape on a surface of the epitaxial layer, and the first impurity concentration is greater than the second impurity concentration.
摘要翻译：提供了具有分散布置的有源区沟槽的半导体结构。半导体结构包括半导体衬底，外延层和有源区介电层。半导体衬底掺杂有具有第一杂质浓度的第一导电类型的杂质。外延层掺杂有具有第二杂质浓度的第一导电类型的杂质并形成在半导体衬底上。外延层具有形成在其中的多个有源区沟槽以分散的方式布置。有源区介电层覆盖有源区沟槽的底部和侧壁。其中，有源区沟槽在外延层的表面上具有四边形形状的开口，并且第一杂质浓度大于第二杂质浓度。

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