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1. 发明授权

US08053751B2 Phase-change semiconductor device and methods of manufacturing the same 有权
标题翻译：相变半导体器件及其制造方法
公开(公告)号：US08053751B2
公开(公告)日：2011-11-08
申请号：US12591531
申请日：2009-11-23
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L21/4763
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
摘要翻译：在相变半导体器件及其制造方法中，示例性方法可以包括在衬底上形成金属层图案，金属层图案包括露出衬底的一部分的开口，在其上形成蚀刻停止层金属层图案，开口的侧壁和衬底的暴露部分，蚀刻停止层形成为具有小于上部厚度阈值的厚度，以及减少至少一部分蚀刻停止层，蚀刻部分的蚀刻停止层与基底形成电连接。

2. 发明申请

US20100072446A1 Phase-change semiconductor device and methods of manufacturing the same 有权
标题翻译：相变半导体器件及其制造方法
公开(公告)号：US20100072446A1
公开(公告)日：2010-03-25
申请号：US12591531
申请日：2009-11-23
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L45/00 , H01L21/768
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
摘要翻译：在相变半导体器件及其制造方法中，示例性方法可以包括在衬底上形成金属层图案，金属层图案包括露出衬底的一部分的开口，在其上形成蚀刻停止层金属层图案，开口的侧壁和衬底的暴露部分，蚀刻停止层形成为具有小于上部厚度阈值的厚度，以及减少至少一部分蚀刻停止层，蚀刻部分的蚀刻停止层与基底形成电连接。

3. 发明授权

US07745341B2 Phase-change semiconductor device and methods of manufacturing the same 有权
公开(公告)号：US07745341B2
公开(公告)日：2010-06-29
申请号：US11482760
申请日：2006-07-10
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L21/302
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.

4. 发明申请

US20070012906A1 Phase-change semiconductor device and methods of manufacturing the same 有权
标题翻译：相变半导体器件及其制造方法
公开(公告)号：US20070012906A1
公开(公告)日：2007-01-18
申请号：US11482760
申请日：2006-07-10
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
摘要翻译：在相变半导体器件及其制造方法中，示例性方法可以包括在衬底上形成金属层图案，金属层图案包括露出衬底的一部分的开口，在其上形成蚀刻停止层金属层图案，开口的侧壁和衬底的暴露部分，蚀刻停止层形成为具有小于上部厚度阈值的厚度，以及减少至少一部分蚀刻停止层，蚀刻部分的蚀刻停止层与基底形成电连接。

5. 发明授权

US07008755B2 Method for forming a planarized layer of a semiconductor device 有权
标题翻译：用于形成半导体器件的平坦化层的方法
公开(公告)号：US07008755B2
公开(公告)日：2006-03-07
申请号：US10464645
申请日：2003-06-19
申请人： Ki-Jong Park , In-Seak Hwang , Tae-Won Kim
发明人： Ki-Jong Park , In-Seak Hwang , Tae-Won Kim
IPC分类号： G03F7/00 , G03F7/36
CPC分类号： H01L21/31055 , H01L21/0273 , H01L21/31053 , H01L21/31144 , H01L21/76819 , H01L27/10814 , H01L27/10894
摘要： In a method for forming a planarized layer on a semiconductor device having concave and convex structures, a dielectric film is formed on a semiconductor substrate; a photoresist pattern is formed to have a thickness on a portion of the dielectric film other than a convex portion greater than h/n (h and n are real numbers of one or more) to remove the convex portion of the dielectric film by a depth of approximately h. The photoresist pattern is re-flowed to have a thickness below h/n at a portion from an edge of the convex portion to a slant portion of the dielectric film. The dielectric film is etched using an etchant having a selectivity of 1:n between the photoresist pattern and the dielectric film. An edge of the photoresist pattern is made thin by re-flowing thereby minimizing a pillar, hence allowing simple, fast, planarization of the dielectric film.
摘要翻译：在具有凹凸结构的半导体器件上形成平坦化层的方法中，在半导体衬底上形成电介质膜; 光致抗蚀剂图案形成为具有除了大于h / n（h和n为一个或多个的实数）的凸部以外的电介质膜的一部分上的厚度，以将电介质膜的凸部去除深度大约h。在从凸部的边缘到电介质膜的倾斜部分的部分，光致抗蚀剂图案被重新流动以具有低于h / n的厚度。使用在光致抗蚀剂图案和电介质膜之间具有1：n选择性的蚀刻剂来蚀刻电介质膜。通过再流动使光致抗蚀剂图案的边缘变薄，从而使柱最小化，从而允许简单，快速地平坦化介电膜。

6. 发明授权

US07945265B2 System and method for fast network re-entry in a broadband wireless access communication system 有权
标题翻译：宽带无线接入通信系统中快速网络重入的系统和方法
公开(公告)号：US07945265B2
公开(公告)日：2011-05-17
申请号：US11872529
申请日：2007-10-15
申请人： Seung-Il Yoon , Tae-Ho Kim , Jun-Hyuk Song , Hong-Sung Chang , Tae-Won Kim , Yong Chang
发明人： Seung-Il Yoon , Tae-Ho Kim , Jun-Hyuk Song , Hong-Sung Chang , Tae-Won Kim , Yong Chang
IPC分类号： H04W36/00 , H04W4/00
CPC分类号： H04W36/0033 , H04W12/04 , H04W60/04
摘要： A system and method for fast network re-entry in a broadband wireless access communication system. A mobile station transmits a first message requiring fast network re-entry to a base station and performs the fast network re-entry together with the base station when receiving a second message approving the fast network re-entry from the base station. The base station receives the first message, authenticates the first message using final session information of the mobile station that is previously stored in the base station, transmits the second message to the mobile station when succeeding in authentication of the first message, and performs the fast network re-entry together with the mobile station.
摘要翻译：一种用于宽带无线接入通信系统中快速网络重入的系统和方法。当从基站接收到批准从快速网络重新进入的第二消息时，移动台向基站发送要求快速网络重入的第一消息，并与基站一起执行快速网络重新进入。基站接收第一消息，使用先前存储在基站中的移动台的最终会话信息来认证第一消息，当成功认证第一消息时将第二消息发送给移动台，并且执行快速与移动台一起重新进入网络。

7. 发明授权

US07843885B2 Apparatus and method for managing dormant state in a wireless packet data system 有权
标题翻译：用于在无线分组数据系统中管理休眠状态的装置和方法
公开(公告)号：US07843885B2
公开(公告)日：2010-11-30
申请号：US11775736
申请日：2007-07-10
申请人： Sung-Won Lee , Tae-Won Kim , Hyun-Seok Lee , Yong Chang , Jae-Hyuk Do
发明人： Sung-Won Lee , Tae-Won Kim , Hyun-Seok Lee , Yong Chang , Jae-Hyuk Do
IPC分类号： H04W4/00
CPC分类号： H04W36/10 , H04W8/06 , H04W60/00 , H04W92/22
摘要： A wireless packet data system efficiently manages a location of a packet call in a radio environment. A mobile station transmits a location registration message to a target BSC when moving to the target BSC adjacent to a source BSC. Upon receipt of the location registration message, the target BSC transmits a location update message for updating a location of the mobile station to a centralized database. Upon receipt of the location update message, the centralized database updates dormant state information for the mobile station to connect the target BSC to the source BSC. The centralized database transmits a location update result message indicating complete update of the dormant state information to the target BSC.
摘要翻译：无线分组数据系统在无线电环境中有效地管理分组呼叫的位置。当移动到与源BSC相邻的目标BSC时，移动台向目标BSC发送位置登记消息。在接收到位置注册消息时，目标BSC向中央数据库发送用于更新移动台的位置的位置更新消息。在接收到位置更新消息时，集中式数据库更新移动台的休眠状态信息，以将目标BSC连接到源BSC。集中式数据库向目标BSC发送指示休眠状态信息的完全更新的位置更新结果消息。

8. 发明授权

US07813320B2 System for handover in BWA communication system and method thereof 有权
标题翻译： BWA通信系统切换系统及其方法
公开(公告)号：US07813320B2
公开(公告)日：2010-10-12
申请号：US12493937
申请日：2009-06-29
申请人： Jung-Won Kim , Tae-Won Kim , Bo-Kyung Wang , Yong Chang , Hong-Sung Chang
发明人： Jung-Won Kim , Tae-Won Kim , Bo-Kyung Wang , Yong Chang , Hong-Sung Chang
IPC分类号： H04W4/00
CPC分类号： H04W36/0055 , H04W36/0088
摘要： A handover method and system in a communication system. In the method, a serving Base Station (BS) broadcasts neighbor BS information including BS identifiers and preamble indices of a plurality of neighbor BSs, receives a handover request message from a Mobile Station (MS), the handover request message including a first set of at least one BS identifier and at least one preamble index for at least one neighbor BS among the plurality of neighbor BSs, and transmits a handover response message to the MS, the handover response message including a second set of at least one BS identifier and at least one preamble index for at least one recommended neighbor BS.
摘要翻译：通信系统中的切换方法和系统。在该方法中，服务基站（BS）广播包括多个相邻BS的BS标识符和前导码索引的邻居BS信息，从移动台（MS）接收切换请求消息，切换请求消息包括第一组所述多个相邻BS中的至少一个相邻BS的至少一个BS标识符和至少一个前导码索引，并且向所述MS发送切换响应消息，所述切换响应消息包括第二组至少一个BS标识符，并且在至少一个推荐的相邻BS的至少一个前导码索引。

9. 发明授权

US07440435B2 Divided MAC protocol structure, data transmission and reception method, and handover method and system using the structure in a wireless communication system 有权
标题翻译：分割MAC协议结构，数据传输和接收方法，以及使用无线通信系统中的结构的切换方法和系统
公开(公告)号：US07440435B2
公开(公告)日：2008-10-21
申请号：US11072937
申请日：2005-03-04
申请人： Geun-Hwi Lim , Tae-Won Kim , Hong-Sung Chang , Jae-Jeong Shim , Jung-Shin Park , Yong Chang , So-Hyun Kim , Seung-Il Yoon , Yeong-Moon Son
发明人： Geun-Hwi Lim , Tae-Won Kim , Hong-Sung Chang , Jae-Jeong Shim , Jung-Shin Park , Yong Chang , So-Hyun Kim , Seung-Il Yoon , Yeong-Moon Son
IPC分类号： H04L12/28 , H04L12/56 , H04L12/66 , H04Q7/00 , H04Q7/20
CPC分类号： H04W36/0033 , H04L1/1867 , H04W8/26 , H04W28/065 , H04W36/08 , H04W76/22 , H04W80/02 , H04W88/12
摘要： A divided Media Access Control (MAC) protocol structure, a data transmission and reception method, and a handover method and system using the structure in a wireless communication system for efficiently managing session information in handover of an MSS (Mobile Subscriber Station). In the MAC protocol structure, a MAC is divided into a MAC-high layer and a MAC-low layer. The MAC-high layer performs session information-related functions and the MAC-low layer performs functions sensitive to a time delay in relation to handover of an MSS. In the handover method, when an MSS in the wireless communication system performs handover between Access Points (APs), session information is managed at a fixed position by an Access Point Controller (APC) including an MAC-high layer or a serving AP. Therefore, the system load can be reduced and communication quality can be improved.
摘要翻译：分割的媒体访问控制（MAC）协议结构，数据发送和接收方法以及使用无线通信系统中的结构的切换方法和系统，用于在MSS（移动用户站）的切换中有效地管理会话信息。在MAC协议结构中，MAC被划分为MAC高层和MAC低层。 MAC高层执行会话信息相关功能，MAC-low层执行与MSS切换相关的时间延迟敏感的功能。在切换方法中，当无线通信系统中的MSS在接入点（AP）之间进行切换时，由包含MAC高层或服务AP的接入点控制器（APC）在固定位置管理会话信息。因此，能够降低系统负荷，提高通信质量。

10. 发明授权

US09171653B2 Lithium manganese composite oxide and method for preparing same 有权
标题翻译：锂锰复合氧化物及其制备方法
公开(公告)号：US09171653B2
公开(公告)日：2015-10-27
申请号：US13883653
申请日：2011-11-07
申请人： Hyoung-Shin Ko , Tae-Won Kim
发明人： Hyoung-Shin Ko , Tae-Won Kim
IPC分类号： H01B1/08 , C01G45/12 , C01G53/00 , H01G11/04 , H01G11/30 , H01M4/131 , H01M4/1391 , H01M4/485 , H01M4/505 , H01M4/04 , C01D15/02 , H01M10/052
CPC分类号： H01B1/08 , C01D15/02 , C01G45/1242 , C01G53/54 , C01P2002/32 , C01P2002/54 , H01G11/04 , H01G11/30 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/485 , H01M4/505 , H01M10/052 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： The present invention relates to a lithium manganese composite oxide and a method for preparing the same, and more particularly, to a lithium manganese composite oxide and a method for preparing same, in which a wet-milling process and a spray-drying process are applied, and the abundance ratio of Mn3+ ions to Mn4+ ions at the surface of the composite oxide is adjusted by controlling an oxidizing atmosphere during heat treatment.
摘要翻译：锂锰复合氧化物及其制备方法技术领域本发明涉及一种锂锰复合氧化物及其制备方法，更具体地，涉及一种应用湿式粉碎法和喷雾干燥法的锂锰复合氧化物及其制备方法并且通过控制热处理期间的氧化气氛来调节复合氧化物表面处的Mn 3+离子与Mn 4+离子的丰度比。

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