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1. 发明申请

US20130262634A1 SITUATION COMMAND SYSTEM AND OPERATING METHOD THEREOF 审中-公开
标题翻译：情况指令系统及其操作方法
公开(公告)号：US20130262634A1
公开(公告)日：2013-10-03
申请号：US13459181
申请日：2012-04-28
申请人： TSE-MING CHANG , Shih-Chia Cheng , Kai-Yin Cheng
发明人： TSE-MING CHANG , Shih-Chia Cheng , Kai-Yin Cheng
IPC分类号： G06F15/16
CPC分类号： H04N21/8126 , H04N21/25891 , H04N21/42201 , H04N21/44218 , H04N21/6543 , H04N21/6582
摘要： A situation command system including a multimedia apparatus and a server is provided. The multimedia device and the server are connected via a network system. The multimedia apparatus, including a microprocessor, a memory device, a multimedia file input device, a network interface, an audio/video body-sensing input device, an audio/video body-sensing output device and a control device, presents a multimedia effect of a file to a user. The server, including a central processing system, a storage system, a communication system and a recognition system, accesses the file and determines whether the file satisfies a trigger condition to selectively output a special effect. When the file satisfies the trigger condition, the multimedia apparatus further superimposes the special effect to the file and presents the file together with the special effect to the user to provide a situation simulation effect.
摘要翻译：提供了包括多媒体装置和服务器的情况指令系统。多媒体设备和服务器通过网络系统连接。包括微处理器，存储设备，多媒体文件输入设备，网络接口，音频/视频体感测输入设备，音频/视频体感测输出设备和控制设备的多媒体设备呈现多媒体效果的文件。包括中央处理系统，存储系统，通信系统和识别系统的服务器访问该文件，并确定文件是否满足触发条件以选择性地输出特殊效果。当文件满足触发条件时，多媒体装置进一步将特殊效果叠加到文件中，并将特殊效果呈现给用户以提供情境模拟效果。

2. 发明授权

US07074701B2 Method of forming a borderless contact opening featuring a composite tri-layer etch stop material 失效
标题翻译：形成具有复合三层蚀刻停止材料的无边界接触开口的方法
公开(公告)号：US07074701B2
公开(公告)日：2006-07-11
申请号：US10718881
申请日：2003-11-21
申请人： Yi-Lung Cheng , Shih-Chia Cheng
发明人： Yi-Lung Cheng , Shih-Chia Cheng
IPC分类号： H01L21/31
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/76802 , H01L21/76832
摘要： A method of forming an opening in a stack of insulator layers featuring an underlying etch stop layer comprised of a tri-layer insulator composite, has been developed. The tri-layer insulator composite comprised of a bottom silicon rich, silicon oxide layer and a top silicon nitride layer, is first formed on a conductive region of a semiconductor substrate. After deposition of overlying insulator layers a photoresist shape is used as a etch mask to allow the desired contact or via hole shape to be defined in the overlying insulator layers via a first phase of an anisotropic dry etch procedure, with the first phase of the dry etching procedure terminating at the top surface of the silicon nitride layer. An over etch procedure used to insure complete removal of overlying insulator layer from the surface of the tri-layer insulator composite, is next performed as a second phase of the anisotropic dry etch procedure. The high etch rate ratio of insulator layer to silicon nitride allows the over etch cycle to be successfully accomplished without risk to underlying materials. A third phase of the anisotropic dry etch procedure selectively removes the silicon nitride layer and subsequently selectively removes the silicon rich, silicon oxide layer without damage to the now exposed conductive region, resulting in definition of the desired contact or via hole openings in the stack of insulator layers.
摘要翻译：已经开发了在堆叠的绝缘体层中形成开口的方法，其特征在于由三层绝缘体复合材料构成的下面的蚀刻停止层。首先在半导体衬底的导电区域上形成由富硅底层，氧化硅层和顶部氮化硅层组成的三层绝缘体复合体。在沉积上覆绝缘体层之后，使用光致抗蚀剂形状作为蚀刻掩模，以允许通过各向异性干蚀刻程序的第一阶段在上覆绝缘体层中限定所需的接触或通孔形状，其中第一相干燥蚀刻过程终止于氮化硅层的顶表面。接下来，进行用于确保从三层绝缘体复合材料的表面完全去除上覆绝缘体层的过蚀刻程序作为各向异性干蚀刻工艺的第二阶段。绝缘体层与氮化硅的高蚀刻速率比允许成功地实现过蚀刻循环，而不会对下面的材料造成风险。各向异性干蚀刻过程的第三阶段选择性地去除氮化硅层，随后选择性地除去富含硅的氧化硅层，而不损害现在暴露的导电区域，导致定义了堆叠中的所需接触或通孔开口绝缘体层。

3. 发明申请

US20050112859A1 Method of forming a borderless contact opening featuring a composite tri-layer etch stop material 失效
标题翻译：形成具有复合三层蚀刻停止材料的无边界接触开口的方法
公开(公告)号：US20050112859A1
公开(公告)日：2005-05-26
申请号：US10718881
申请日：2003-11-21
申请人： Yi-Lung Cheng , Shih-Chia Cheng
发明人： Yi-Lung Cheng , Shih-Chia Cheng
IPC分类号： H01L21/31 , H01L21/311 , H01L21/44 , H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/76802 , H01L21/76832
摘要： A method of forming an opening in a stack of insulator layers featuring an underlying etch stop layer comprised of a tri-layer insulator composite, has been developed. The tri-layer insulator composite comprised of a bottom silicon rich, silicon oxide layer and a top silicon nitride layer, is first formed on a conductive region of a semiconductor substrate. After deposition of overlying insulator layers a photoresist shape is used as a etch mask to allow the desired contact or via hole shape to be defined in the overlying insulator layers via a first phase of an anisotropic dry etch procedure, with the first phase of the dry etching procedure terminating at the top surface of the silicon nitride layer. An over etch procedure used to insure complete removal of overlying insulator layer from the surface of the tri-layer insulator composite, is next performed as a second phase of the anisotropic dry etch procedure. The high etch rate ratio of insulator layer to silicon nitride allows the over etch cycle to be successfully accomplished without risk to underlying materials. A third phase of the anisotropic dry etch procedure selectively removes the silicon nitride layer and subsequently selectively removes the silicon rich, silicon oxide layer without damage to the now exposed conductive region, resulting in definition of the desired contact or via hole openings in the stack of insulator layers.
摘要翻译：已经开发了在堆叠的绝缘体层中形成开口的方法，其特征在于由三层绝缘体复合材料构成的下面的蚀刻停止层。首先在半导体衬底的导电区域上形成由富硅底层，氧化硅层和顶部氮化硅层组成的三层绝缘体复合体。在沉积上覆绝缘体层之后，使用光致抗蚀剂形状作为蚀刻掩模，以允许通过各向异性干蚀刻程序的第一阶段在上覆绝缘体层中限定所需的接触或通孔形状，其中第一相干燥蚀刻过程终止于氮化硅层的顶表面。接下来，进行用于确保从三层绝缘体复合材料的表面完全去除上覆绝缘体层的过蚀刻程序作为各向异性干蚀刻工艺的第二阶段。绝缘体层与氮化硅的高蚀刻速率比允许成功地实现过蚀刻循环，而不会对下面的材料造成风险。各向异性干蚀刻过程的第三阶段选择性地去除氮化硅层，随后选择性地除去富含硅的氧化硅层，而不损害现在暴露的导电区域，导致定义了堆叠中的所需接触或通孔开口绝缘体层。

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