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1. 发明申请

US20210242036A1 METHOD FOR ETCHING OXIDE SEMICONDUCTOR FILM AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20210242036A1
公开(公告)日：2021-08-05
申请号：US17163102
申请日：2021-01-29
申请人： TOKYO ELECTRON LIMITED
发明人： Masahiro YAMAZAKI , Shigeru Tahara
IPC分类号： H01L21/467 , H01L21/02 , H01J37/32
摘要： A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.

2. 发明授权

US10626498B2 Method of processing target object to be processed 有权
公开(公告)号：US10626498B2
公开(公告)日：2020-04-21
申请号：US15131805
申请日：2016-04-18
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Tahara , Eiichi Nishimura
IPC分类号： H01L21/311 , C23C16/44 , C23C16/50 , C23C16/455 , H01J37/32
CPC分类号： C23C16/4412 , C23C16/455 , C23C16/50 , H01J37/32449 , H01J37/32477 , H01L21/31116
摘要： There is provided a method of processing a target object to be processed including a porous film and a mask. The method include supplying a first gas into a processing chamber of a plasma processing apparatus in which the target object including the porous film is accommodated, and generating a plasma of a second gas in the processing chamber to remove the mask. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the target object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas supplied into the processing chamber is greater than or equal to 20% of the saturated vapor pressure.

3. 发明申请

US20220199418A1 Selective Etching with Fluorine, Oxygen and Noble Gas Containing Plasmas 有权
公开(公告)号：US20220199418A1
公开(公告)日：2022-06-23
申请号：US17521958
申请日：2021-11-09
申请人： Tokyo Electron Limited , Université d'Orléans
发明人： Du Zhang , Hojin Kim , Shigeru Tahara , Kaoru Maekawa , Mingmei Wang , Jacques Faguet , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Gaëlle Antoun
IPC分类号： H01L21/311 , H01L21/02
摘要： A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

4. 发明授权

US10825688B2 Method for etching copper layer 有权
公开(公告)号：US10825688B2
公开(公告)日：2020-11-03
申请号：US16308428
申请日：2017-06-07
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Tahara , Daisuke Urayama , Kenji Matsumoto , Hidenori Miyoshi
IPC分类号： H01L21/3065 , C23F4/00 , H01L21/3213 , H01L23/532 , H05H1/46
摘要： A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

5. 发明授权

US10229815B2 Plasma etching apparatus and method 有权
公开(公告)号：US10229815B2
公开(公告)日：2019-03-12
申请号：US14489125
申请日：2014-09-17
申请人： TOKYO ELECTRON LIMITED
发明人： Akira Koshiishi , Noriyuki Kobayashi , Shigeru Yoneda , Kenichi Hanawa , Shigeru Tahara , Masaru Sugimoto
IPC分类号： H01J37/32 , H01L21/311 , H01L21/768 , H01L21/3065
摘要： A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

6. 发明申请

US20140131839A1 Etching Method Using Block-Copolymers 有权
标题翻译：使用嵌段共聚物的蚀刻方法
公开(公告)号：US20140131839A1
公开(公告)日：2014-05-15
申请号：US14074460
申请日：2013-11-07
申请人： Tokyo Electron Limited , IMEC
发明人： Boon Teik Chan , Shigeru Tahara
IPC分类号： H01L21/3065 , H01L27/04
CPC分类号： H01L21/3086 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0271 , H01L21/3065 , H01L21/3081 , H01L21/3088 , H01L27/04 , H01L51/0014 , H01L51/0017
摘要： A method for lithography is disclosed. The method includes obtaining a self-organizing block-copolymer layer on a neutral layer overlying a substrate, the self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer layer furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components. Further, the method includes etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer component. Still further, the method includes applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises an inert gas and H2.
摘要翻译：公开了一种用于光刻的方法。该方法包括在覆盖衬底的中性层上获得自组织嵌段共聚物层，所述自组织嵌段共聚物层包含至少两个具有相互不同的抗蚀剂电阻的聚合物组分，所述自组织嵌段共聚物层还包含通过所述至少两种聚合物组分的微相分离形成的共聚物图案结构。此外，该方法包括选择性地蚀刻自组织嵌段共聚物层的第一聚合物组分，由此保留第二聚合物组分。此外，该方法包括使用第二聚合物组分作为掩模将等离子体蚀刻施加到中性层，其中等离子体蚀刻包括惰性气体和H 2。

7. 发明申请

US20140091435A1 Etching of Block-Copolymers 有权
标题翻译：嵌段共聚物的蚀刻
公开(公告)号：US20140091435A1
公开(公告)日：2014-04-03
申请号：US14038565
申请日：2013-09-26
申请人： Tokyo Electron Limited , IMEC
发明人： Boon Teik Chan , Shigeru Tahara
IPC分类号： H01L21/027
CPC分类号： H01L21/0271 , B81C1/00031 , G03F7/0002 , H01L21/0337 , H01L21/31138
摘要： The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said self-organizing block-copolymer layer using a plasma formed from a substantially ashing gas, and second plasma etching (16) of said self-organizing block-copolymer layer using plasma formed from a pure inert gas or mixture of inert gases in order to selectively remove a first polymer phase. A corresponding intermediate product also is described.
摘要翻译：本发明涉及一种嵌段共聚物光刻法（10）。该方法包括获得（12）包含至少两个具有相互不同的抗蚀性的聚合物组分的自组织嵌段共聚物层的步骤，以及施加至少一次所述自组装嵌段共聚物的第一等离子体蚀刻（14）使用由基本灰分气体形成的等离子体组织嵌段共聚物层，以及使用由纯惰性气体或惰性气体混合物形成的等离子体进行第二等离子体蚀刻（16）所述自组织嵌段共聚物层，以选择性地除去第一聚合物相。还描述了相应的中间产物。

8. 发明授权

US11616194B2 Etching method 有权
公开(公告)号：US11616194B2
公开(公告)日：2023-03-28
申请号：US17040483
申请日：2019-03-15
申请人： TOKYO ELECTRON LIMITED
发明人： Ken Ando , Hiroki Maehara , Jun Sato , Kiyoshi Maeda , Shigeru Tahara
IPC分类号： H01L43/08 , H01L43/12
摘要： An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

9. 发明授权

US11120999B2 Plasma etching method 有权
公开(公告)号：US11120999B2
公开(公告)日：2021-09-14
申请号：US16770084
申请日：2018-12-11
申请人： TOKYO ELECTRON LIMITED , UNIVERSITE D'ORLEANS
发明人： Koichi Yatsuda , Kaoru Maekawa , Nagisa Sato , Kumiko Ono , Shigeru Tahara , Jacques Faguet , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Gaëlle Antoun
IPC分类号： H01L21/311 , H01L21/3065 , H01J37/32
摘要： A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

10. 发明授权

US10770308B2 Etching method 有权
公开(公告)号：US10770308B2
公开(公告)日：2020-09-08
申请号：US16360469
申请日：2019-03-21
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru Tahara , Nobuaki Seki , Takahiko Kato
IPC分类号： H01L21/3213 , H01L21/321 , H01J37/32 , H01L21/67 , H01L21/683 , C23F4/00 , H01L21/3065
摘要： A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.

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