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    • 6. 发明申请
    • PLACING TABLE AND PLASMA PROCESSING APPARATUS
    • 配置表和等离子体加工设备
    • US20150373783A1
    • 2015-12-24
    • US14730520
    • 2015-06-04
    • TOKYO ELECTRON LIMITED
    • Dai KITAGAWA
    • H05B3/26H01L21/683H01L21/67H01J37/32
    • H05B3/26H01J37/32532H01J37/32715H01L21/67103H01L21/67109H01L21/6831H01L21/68757H05B3/262
    • Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. The support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer. The heater electrode is formed by the thermal spraying method.
    • 提供了一种配置成将工件放置在其上的放置台。 放置台包括:静电卡盘,其构造成吸引工件; 构造成支撑聚焦环的支撑构件; 以及具有构造成支撑所述静电卡盘的第一区域的金属基座和被构造成支撑所述支撑构件的第二区域,所述第二区域围绕所述第一区域。 支撑构件包括:由陶瓷烧结体形成的中间层,并通过粘合剂支撑在第二区域上; 通过热喷涂法形成在中间层上的热喷涂陶瓷层; 以及设置在热喷涂陶瓷层内的加热电极。 加热电极通过热喷涂法形成。