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1. 发明申请

US20160284516A1 MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：微波等离子体源和等离子体处理装置
公开(公告)号：US20160284516A1
公开(公告)日：2016-09-29
申请号：US15075670
申请日：2016-03-21
申请人： TOKYO ELECTRON LIMITED
发明人： Taro IKEDA , Akira TANIHARA , Shigeru KASAI , Nobuhiko YAMAMOTO
IPC分类号： H01J37/32
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32211 , H01J37/32238
摘要： A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.
摘要翻译：一种微波等离子体源，用于通过将微波辐射到等离子体处理装置的腔室中来形成表面波等离子体，其包括：用于输出微波的微波输出部分; 用于传送微波的微波传输部分; 以及用于将微波辐射到室中的微波辐射构件。微波传输部分包括多个微波引入机构，其周向布置在微波辐射部件的周边部分中，并被配置为将微波引入到微波辐射部件中。微波辐射构件包括金属主体，在主体的配置表面附近布置成整体环形的多个电介质慢波构件，布置在主体的微波辐射表面中的环形介电微波传输构件主体和安装在慢波构件和微波传输构件之间的缝隙天线部分。

2. 发明申请

US20160240374A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20160240374A1
公开(公告)日：2016-08-18
申请号：US15043242
申请日：2016-02-12
申请人： TOKYO ELECTRON LIMITED
发明人： Shigeru KASAI , Kotaro MIYATANI , Takuya KUROTORI , Kenichi KOTE , Yutaka FUJINO , Akira TANIHARA , Kohei KAWAMURA
IPC分类号： H01L21/02
CPC分类号： H01L21/02345 , H01L21/0212 , H01L21/02175 , H01L21/02274 , H01L21/02315
摘要： In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.
摘要翻译：在与金属接触的氟碳系绝缘膜的形成方法中，在含氢气氛中对附着有水分的金属照射微波。然后，对照射微波的金属进行基于碳氟化合物气体的等离子体CVD，形成绝缘膜。

3. 发明申请

US20140158302A1 MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS 有权
标题翻译：微波辐射天线，微波等离子体源和等离子体处理装置
公开(公告)号：US20140158302A1
公开(公告)日：2014-06-12
申请号：US14095563
申请日：2013-12-03
申请人： TOKYO ELECTRON LIMITED
发明人： Taro IKEDA , Tomohito KOMATSU , Shigeru KASAI , Hiroyuki MIYASHITA , Yuki OSADA , Akira TANIHARA , Yutaka FUJINO
IPC分类号： H01J37/32
CPC分类号： H01J37/3222 , H01J37/32201
摘要： A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.
摘要翻译：微波辐射天线包括具有微波辐射表面的天线体; 处理气体入口，被配置为将处理气体引入到天线体中; 气体扩散空间，其构造成将所述处理气体扩散到所述天线体中; 多个气体出口，其设置在所述天线体中并且被配置为将所述处理气体排出到所述室中; 在槽与气体扩散空间和气体出口分离的状态下设置在天线体中的多个槽; 以及设置在天线体的微波辐射面侧的环状电介质部件，以覆盖形成槽的槽形成区域。通过微波辐射通过狭缝和环形电介质构成的微波辐射表面形成金属表面波，并通过金属表面波产生表面波等离子体。

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