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1. 发明申请

US20010010649A1 Novel flash memory using micro vacuum tube technology 有权
标题翻译：新型闪存采用微型真空管技术
公开(公告)号：US20010010649A1
公开(公告)日：2001-08-02
申请号：US09784820
申请日：2001-02-20
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
发明人： Nai-Cheng Lu
IPC分类号： G11C011/34
CPC分类号： H01L29/7881 , G11C16/02 , G11C16/0416 , H01J19/24 , H01J21/105
摘要： In this invention a micro vacuum tube is used to form a flash memory cell. The micro vacuum tube is position over a floating gate and is used to program, erase, read and deselect the flash memory cell. A first embodiment includes a source and drain with the floating gate to provide a means to produce bit line current to be read by the flash memory sense amplifiers. In a second embodiment the source and drain are eliminated and cathode gate current is used to indicate the state of the flash memory cell. In a third embodiment the floating gate is replace with a diffusion in the semiconductor substrate. The cathode tip is formed by filling a depression in a sacrificial material used to temporarily fill the volume that will be the vacuum chamber when the vacuum tube is completed. The tip can be a convex cusp producing a needle like point or an elongated convex cusp having an sharp line edge. The two different shaped cathode tips depend on the shape of the vacuum chamber, and the elongated convex cusp produces a more efficient emission of electron.
摘要翻译：在本发明中，使用微型真空管来形成闪存单元。微型真空管位于浮动栅极上，用于对闪存单元进行编程，擦除，读取和取消选择。第一实施例包括具有浮动栅极的源极和漏极，以提供产生要由闪存读出放大器读取的位线电流的装置。在第二实施例中，消除了源极和漏极，并且使用阴极栅极电流来指示闪存单元的状态。在第三实施例中，浮置栅极被替换为半导体衬底中的扩散。当真空管完成时，通过在牺牲材料中填充用于临时填充真空室的体积的牺牲材料来形成阴极尖端。尖端可以是产生针状点的凸起尖点或具有尖锐线边缘的细长凸起尖点。两个不同形状的阴极尖端取决于真空室的形状，并且细长凸起尖端产生更有效的电子发射。

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