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1. 发明授权

US5866983A Protective metal silicate coating for electrodeless HID lamps 失效
标题翻译：用于无电极HID灯的保护性金属硅酸盐涂层
公开(公告)号：US5866983A
公开(公告)日：1999-02-02
申请号：US756312
申请日：1996-11-25
申请人： Svante Prochazka , Hsueh-Rong Chang
发明人： Svante Prochazka , Hsueh-Rong Chang
IPC分类号： H01J17/16
CPC分类号： H01J61/35 , H01J61/125 , H01J65/048 , H01J9/20
摘要： Sodium loss, free halide build-up, devitrification and wall etching of the arc chamber are substantially reduced in an electrodeless HID metal halide arc discharge lamp by a protective metal silicate coating present only on the interior, equatorial portion of the arc chamber wall which is closest to the arc plasma. Suitable coatings include a metal silicate of a metal selected from the group consisting essentially of scandium, yttrium, beryllium, rare earth metal and mixture thereof.
摘要翻译：在无电极HID金属卤化物电弧放电灯中，通过仅在电弧室壁的内部赤道部分存在的保护性金属硅酸盐涂层，电弧室的钠损失，自由卤化物积聚，失透和壁蚀刻显着降低，最接近电弧等离子体。合适的涂层包括选自基本上由钪，钇，铍，稀土金属及其混合物组成的组的金属的金属硅酸盐。

2. 发明授权

US07476932B2 U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devices 有权
标题翻译：用于大功率MOS半导体器件的U形金属氧化物半导体（UMOS）栅极结构
公开(公告)号：US07476932B2
公开(公告)日：2009-01-13
申请号：US11537454
申请日：2006-09-29
申请人： Qingchun Zhang , Hsueh-Rong Chang
发明人： Qingchun Zhang , Hsueh-Rong Chang
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0878 , H01L29/1608 , H01L29/7828
摘要： A U-shape Metal-Oxide-Semiconductor (UMOS) device comprises a P-base layer, an N+ source region disposed in the P-base layer where the source region has a first surface coplanar with a first surface of the P-base layer, a dielectric layer extending through the P-base layer and forming a U-shape trench having side walls and floor enclosing a trench interior region, a conducting gate material filling the trench interior region, a first accumulation channel layer disposed along a first side wall of the U-shape trench and in contact with the source region and a first side wall of the U-shape trench, a P-junction gate disposed adjacent to the dielectric layer floor and in proximity to the first accumulation channel layer, and an N-drift region where the P-junction gate is disposed between the dielectric layer and the N-drift region.
摘要翻译： U形金属氧化物半导体（UMOS）器件包括P基底层，设置在P基底层中的N +源极区域，其中源区域具有与P基底层的第一表面共面的第一表面，延伸穿过所述P基层并形成具有侧壁和包围沟槽内部区域的地板的U形沟槽的介电层，填充所述沟槽内部区域的导电栅极材料，沿着第一侧壁设置的第一堆积沟道层的U形沟槽并与U形沟槽的源极区域和第一侧壁接触; P结栅极，其设置在电介质层底部附近并且靠近第一累积沟道层，N 其中P结栅极设置在介电层和N漂移区之间。

3. 发明授权

US5343118A Iodine getter for a high intensity metal halide discharge lamp 失效
标题翻译：碘吸收剂用于高强度金属卤化物放电灯
公开(公告)号：US5343118A
公开(公告)日：1994-08-30
申请号：US092539
申请日：1993-07-16
申请人： Hsueh-Rong Chang
发明人： Hsueh-Rong Chang
IPC分类号： H01J61/12 , H01J61/26 , H01J61/35 , H01J65/04 , H01J17/20 , H01J61/18
CPC分类号： H01J61/35 , H01J61/125 , H01J61/26 , H01J65/048
摘要： A high intensity discharge lamp having a fill including at least one rare earth metal iodide has an additional metal component for avoiding a substantial loss of the metal component of the fill and the attendant substantial buildup of free iodine, thereby increasing the useful life of the lamp. During lamp operation, the additional metal component combines with iodine in the vapor phase, forming a relatively stable iodide and thus reducing the total level of free iodine in the lamp. As a result, arc instability is avoided. The additional metal component also emits visible light and hence improves efficacy. Moreover, the additional metal component does not attack the arc tube wall by reducing silica. Suitable additional metal components include indium and thallium.
摘要翻译：具有包括至少一种稀土金属碘化物的填充物的高强度放电灯具有额外的金属成分，用于避免填充物的金属成分的显着损失和随之而来的游离碘积累，从而增加了灯的使用寿命。在灯操作期间，附加的金属组分与气相中的碘结合，形成相对稳定的碘化物，从而降低灯中游离碘的总含量。结果，避免了电弧不稳定性。另外的金属组分也发出可见光，因此提高了功效。此外，附加的金属组分不会通过还原二氧化硅来侵蚀电弧管壁。合适的附加金属组分包括铟和铊。

4. 发明授权

US5111253A Multicellular FET having a Schottky diode merged therewith 失效
标题翻译：具有与其合并的肖特基二极管的多细胞FET
公开(公告)号：US5111253A
公开(公告)日：1992-05-05
申请号：US576125
申请日：1990-08-28
申请人： Charles S. Korman , Bantval J. Baliga , Hsueh-Rong Chang
发明人： Charles S. Korman , Bantval J. Baliga , Hsueh-Rong Chang
IPC分类号： H01L27/07 , H01L29/78
CPC分类号： H01L29/7813 , H01L27/0727 , H01L29/7806 , H01L29/0619 , H01L29/0696 , H01L29/41766
摘要： A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.
摘要翻译：半导体功率开关器件包括具有散布于其中的肖特基势垒二极管结构的多细胞FET结构，其中至少一些FET单元没有肖特基势垒部分。可以调节整个装置中的肖特基势垒接触面积与FET单元面积的比例，以调整装置以在特定电流密度下操作。

5. 发明授权

US4994883A Field controlled diode (FCD) having MOS trench gates 失效
标题翻译：具有MOS沟槽栅极的场控二极管（FCD）
公开(公告)号：US4994883A
公开(公告)日：1991-02-19
申请号：US416171
申请日：1989-10-02
申请人： Hsueh-Rong Chang , Bantval J. Baliga
发明人： Hsueh-Rong Chang , Bantval J. Baliga
IPC分类号： H01L29/73 , H01L29/739
CPC分类号： H01L29/7391 , H01L29/7302
摘要： A field controlled diode is provided with an insulated gate electrode for controlling the conductivity of the diode. The diode is turned off by applying a gate bias voltage which pinches off the drift region of the device to block current flow in the anode/cathode diode path. The turn-off characteristics of the device are enhanced by including transistor portions in the structure in which the drift region is not pinched off during turn-off to facilitate extraction of stored charge from the diode structure.
摘要翻译：场控二极管设置有用于控制二极管的导电性的绝缘栅电极。通过施加钳位偏置电压来关闭二极管，钳位偏置电压夹住器件的漂移区域以阻断阳极/阴极二极管路径中的电流。器件的关断特性通过将晶体管部分包括在关断期间漂移区域不被夹持的结构来增强，以便于从二极管结构提取存储的电荷。

6. 发明授权

US08354733B2 IGBT power semiconductor package having a conductive clip 有权
标题翻译： IGBT功率半导体封装具有导电夹
公开(公告)号：US08354733B2
公开(公告)日：2013-01-15
申请号：US13071329
申请日：2011-03-24
申请人： Hsueh-Rong Chang
发明人： Hsueh-Rong Chang
IPC分类号： H01L29/00
CPC分类号： H01R13/10 , H01L23/49811 , H01L23/49844 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/73 , H01L25/072 , H01L29/7393 , H01L2224/04042 , H01L2224/05124 , H01L2224/05554 , H01L2224/05639 , H01L2224/05655 , H01L2224/05666 , H01L2224/0603 , H01L2224/29101 , H01L2224/32225 , H01L2224/37011 , H01L2224/37147 , H01L2224/37639 , H01L2224/4007 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48132 , H01L2224/48227 , H01L2224/48472 , H01L2224/48739 , H01L2224/48755 , H01L2224/48766 , H01L2224/4911 , H01L2224/49111 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84011 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/0781 , H01L2924/09511 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/15798 , H01L2924/3641 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2924/00015
摘要： According to one disclosed embodiment, a power semiconductor package includes an insulated-gate bipolar transistor (IGBT) residing on a package substrate, where the IGBT includes a plurality of solderable front metal (SFM) coated emitter segments situated atop the IGBT and connected to an emitter of the IGBT. The power semiconductor package also includes a conductive clip coupling the plurality of SFM coated emitter segments to an emitter pad on the package substrate. Additionally, the power semiconductor package includes a gate pad on the package substrate coupled to a gate of the IGBT, a collector pad on the package substrate situated under the IGBT and coupled to a collector of the IGBT, and an emitter terminal, a collector terminal and a gate terminal of the package substrate that are routed to the emitter pad, collector pad, and gate pad, respectively.
摘要翻译：根据一个所公开的实施例，功率半导体封装包括驻留在封装衬底上的绝缘栅双极晶体管（IGBT），其中IGBT包括位于IGBT顶部并连接到IGBT的多个可焊接前金属（SFM） IGBT的发射极。功率半导体封装还包括将多个SFM涂覆的发射极区段耦合到封装衬底上的发射极焊盘的导电夹。此外，功率半导体封装包括耦合到IGBT的栅极的封装衬底上的栅极焊盘，位于IGBT下方并耦合到IGBT的集电极的封装衬底上的集电极焊盘，以及发射极端子，集电极端子以及封装衬底的栅极端子，其分别被引导到发射极焊盘，集电极焊盘和栅极焊盘。

7. 发明授权

US06965131B2 Thyristor switch with turn-off current shunt, and operating method 失效
标题翻译：具有关断电流分流的晶闸管开关和操作方法
公开(公告)号：US06965131B2
公开(公告)日：2005-11-15
申请号：US10383598
申请日：2003-03-07
申请人： Hsueh-Rong Chang
发明人： Hsueh-Rong Chang
IPC分类号： H01L29/74 , H01L29/745 , H01L29/749
CPC分类号： H01L29/742 , H01L29/7455 , H01L29/749
摘要： A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a drift layer, with a p-n junction formed below a gate adjacent to the drift layer to establish a depletion region with a high potential barrier to thyristor current flow at turn-off. The drift layer also provides the transistor base, as well as a current path allowing the transistor base current to be controlled by the thyristor. The switch is voltage controlled using an insulated gate.
摘要翻译：半导体开关包括晶闸管和电流分流器，优选与晶闸管并联并由晶闸管控制的晶体管，其在关断时分流晶闸管电流。晶闸管包括漂移层的一部分，其中p-n结形成在与漂移层相邻的栅极下方，以建立在截止时具有对晶闸管电流的高势垒的耗尽区。漂移层还提供晶体管基极，以及允许晶体管基极电流由晶闸管控制的电流通路。开关使用绝缘栅极进行电压控制。

8. 发明授权

US06252258B1 High power rectifier 失效
标题翻译：大功率整流器
公开(公告)号：US06252258B1
公开(公告)日：2001-06-26
申请号：US09371740
申请日：1999-08-10
申请人： Hsueh-Rong Chang , Rajesh Gupta
发明人： Hsueh-Rong Chang , Rajesh Gupta
IPC分类号： H01L31111
CPC分类号： H01L29/0623 , H01L29/0692 , H01L29/872 , H01L29/8725
摘要： A high power rectifier device has an − drift layer on an N+ layer. A number of trench structures are recessed into the drift layer opposite the N+ layer; respective mesa regions separate each pair of trenches. Each trench structure includes oxide side-walls and an oxide bottom, and is filled with a conductive material. A metal layer contacts the trench structures and mesa regions, forming Schottky contacts at the metal-mesa interface. Shallow P regions extend from the bottom of each trench into the drift layer. Forward conduction occurs when the Schottky contact's barrier height is overcome. When reversed-biased, depletion regions form around the shallow P regions and the oxide side-walls which provide potential barriers across the mesa regions that shield the Schottky contacts from high electric fields, providing a high reverse blocking voltage and reducing reverse leakage current. The device's unipolar structure provides low switching losses, enabling high switching speeds while reducing the power that must be dissipated when transitioning from forward conduction to reverse blocking mode.
摘要翻译：大功率整流器件在N +层上具有漂移层。多个沟槽结构凹陷到与N +层相反的漂移层中; 相应的台面区域分隔每对沟槽。每个沟槽结构包括氧化物侧壁和氧化物底部，并且填充有导电材料。金属层接触沟槽结构和台面区域，在金属 - 台面界面处形成肖特基接触。浅P区域从每个沟槽的底部延伸到漂移层。当肖特基接触的屏障高度被克服时，会发生正向传导。当反向偏置时，在浅的P区和氧化物侧壁周围形成耗尽区，这些侧壁在屏蔽肖特基接触的高电场的台面区域之间提供势垒，提供高的反向阻断电压并减少反向漏电流。器件的单极结构提供低开关损耗，实现高开关速度，同时降低从正向导通转换为反向阻塞模式时必须消耗的功率。

9. 发明授权

US4994871A Insulated gate bipolar transistor with improved latch-up current level and safe operating area 失效
标题翻译：绝缘栅双极晶体管，具有提高的闩锁电流水平和安全的工作区域
公开(公告)号：US4994871A
公开(公告)日：1991-02-19
申请号：US279392
申请日：1988-12-02
申请人： Hsueh-Rong Chang , Bantval J. Baliga
发明人： Hsueh-Rong Chang , Bantval J. Baliga
IPC分类号： H01L29/06 , H01L29/739
CPC分类号： H01L29/0696 , H01L29/0692 , H01L29/7397
摘要： A UMOS IGBT has a source electrode ohmic contact area which is at least 40% base region and preferably at least 50% base region in order to provide a high latching current and a large safe operating area.
摘要翻译： UMOS IGBT具有至少40％的基极区域，优选至少50％的基极区域的源极电极欧姆接触面积，以便提供高的闭锁电流和大的安全操作区域。

10. 发明授权

US4992390A Trench gate structure with thick bottom oxide 失效
标题翻译：具有厚底部氧化物的沟槽门结构
公开(公告)号：US4992390A
公开(公告)日：1991-02-12
申请号：US376072
申请日：1989-07-06
申请人： Hsueh-Rong Chang
发明人： Hsueh-Rong Chang
IPC分类号： H01L21/265 , H01L21/336 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/42368 , H01L21/26533
摘要： Improved trench gate field effect devices are provided by forming a thick oxide at the bottom of the trench. This thick oxide may be preferably formed by ion implantation into the bottom of the trench.
摘要翻译：通过在沟槽的底部形成厚的氧化物来提供改进的沟槽栅场效应器件。该厚氧化物可优选通过离子注入形成沟槽的底部。

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