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    • 2. 发明授权
    • Materials and methods for chemical-mechanical planarization
    • 化学机械平面化的材料和方法
    • US06910951B2
    • 2005-06-28
    • US10370781
    • 2003-02-24
    • Sudhakar BalijepalliDale J. AldrichLaura A. Grier
    • Sudhakar BalijepalliDale J. AldrichLaura A. Grier
    • B24B37/04B24B1/00
    • B24B37/245B24B37/042B24B53/017
    • Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.
    • 提供了在使用具有开孔形成泡沫结构的固定研磨平坦化垫的半导体器件制造期间,在半导体衬底上形成的诸如氧化物或金属的材料层,例如氧化物或金属的化学机械平坦化的材料和方法,通过调节而产生游离磨粒, 与载体液体结合以在平坦化焊盘的抛光表面上形成原位浆料,结合半导体衬底和平坦化焊盘之间的相对运动,倾向于从半导体衬底的表面去除材料层。 根据材料层的组成,可以通过操纵载体液体的pH或氧化剂含量来控制从半导体衬底去除材料的速率。