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1. 发明授权

US07867799B2 MBE growth of a semiconductor laser diode 失效
标题翻译：半导体激光二极管的MBE增长
公开(公告)号：US07867799B2
公开(公告)日：2011-01-11
申请号：US10974207
申请日：2004-10-27
申请人： Stewart Hooper , Valerie Bousquet , Katherine L. Johnson , Matthias Kauer , Jonathan Heffernan
发明人： Stewart Hooper , Valerie Bousquet , Katherine L. Johnson , Matthias Kauer , Jonathan Heffernan
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02631 , H01S2304/02
摘要： A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.
摘要翻译：（Al，Ga，In）N材料系统中制造连续波半导体激光二极管的方法包括：依次生长第一包层区域（4），第一光导区域（5），有源区域 6），第二光导区域（7）和第二包层区域（8）。第一包层区域（4），第一导光区域（5），有源区域（6），第二光导区域（7）和第二包层区域（8）中的每一个通过分子束外延沉积。

2. 发明授权

US07569862B2 Semiconductor light-emitting device and a method of manufacture thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07569862B2
公开(公告)日：2009-08-04
申请号：US11030791
申请日：2005-01-07
申请人： Katherine L. Johnson , Stewart Hooper , Valerie Bousquet , Matthias Kauer , Jonathan Heffernan
发明人： Katherine L. Johnson , Stewart Hooper , Valerie Bousquet , Matthias Kauer , Jonathan Heffernan
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , H01L33/007 , H01S5/0213 , H01S5/2215 , H01S5/2224 , H01S5/2275 , H01S5/32341 , H01S2301/173
摘要： A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminum-containing cladding region or an aluminum-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5). The or each exposed portion of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5) is then oxidized to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).
摘要翻译：一种制造半导体发光器件的方法包括选择性地蚀刻在氮化物材料体系中制造并包括含铝包层区域或含铝光导区域（5）的半导体层结构（16）。蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。然后将含铝包覆区域或含铝光导区域（5）的暴露部分或每个暴露部分氧化，以形成横向邻近并从台面横向延伸的电流阻挡层（18）。当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。

3. 发明授权

US07375367B2 Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer 失效
标题翻译：具有形成最下层和最上层的含铝层的有源区的半导体发光器件
公开(公告)号：US07375367B2
公开(公告)日：2008-05-20
申请号：US10974348
申请日：2004-10-27
申请人： Stewart Hooper , Valerie Bousquet , Katherine L. Johnson , Jonathan Heffernan
发明人： Stewart Hooper , Valerie Bousquet , Katherine L. Johnson , Jonathan Heffernan
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/3407 , H01S5/34333 , H01S2304/00
摘要： A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
摘要翻译：在氮化物材料系统中制造的半导体发光器件具有设置在衬底上的有源区域。有源区包括形成有源区的最下层的第一含铝层，形成有源区的最上层的第二含铝层和设置在第一含铝层之间的至少一个InGaN量子阱层和第二含铝层。含铝层在有源区域中提供改进的载流子限制，因此增加了器件的输出光功率。

4. 发明授权

US07276391B2 Manufacture of a semiconductor device 失效
标题翻译：制造半导体器件
公开(公告)号：US07276391B2
公开(公告)日：2007-10-02
申请号：US10974226
申请日：2004-10-27
申请人： Stewart Hooper , Valerie Bousquet , Katherine L. Johnson , Jonathan Heffernan
发明人： Stewart Hooper , Valerie Bousquet , Katherine L. Johnson , Jonathan Heffernan
IPC分类号： H01L21/477
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/06 , H01S5/0213 , H01S5/34333 , H01S2304/00 , H01S2304/02
摘要： A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.
摘要翻译：一种制造半导体发光器件的有源区的方法，其中有源区包括多个势垒层（11,13,15,17），其中每对势垒层被量子阱层（12 ，14,16）包括分别对每个阻挡层（11,13,15,17）进行退火。一旦其已经生长，并且在层在阻挡层上生长之后，每个阻挡层（11,13,15,17）被退火。通过本发明的方法生长的器件具有比通过具有单一退火步骤的常规制造工艺制造的器件显着更高的光功率输出。

5. 发明授权

US07504321B2 MBE growth of an algan layer or AlGaN multilayer structure 失效
标题翻译：一个Algan层或AlGaN多层结构的MBE生长
公开(公告)号：US07504321B2
公开(公告)日：2009-03-17
申请号：US10525406
申请日：2003-08-18
申请人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Katherine L. Johnson , Jonathan Heffernan
发明人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Katherine L. Johnson , Jonathan Heffernan
IPC分类号： H01L21/00
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminum to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminum mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminum is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminum enables a second (Al,Ga)N layer, having a different aluminum mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.
摘要翻译：通过分子束外延生长AlGaN半导体层结构的方法包括向生长室供应氨，镓和铝，从而通过MBE在设置在生长室中的衬底上生长第一（Al，Ga）N层。第一（Al，Ga）N层具有非零的铝摩尔分数。以至少1×10 -4 mbar的光束当量压力供应氨，以至少1×10 -8 mbar的光束当量压力供应镓，并以至少1×10 -8 mbar的光束当量压力供应铝在成长过程中。一旦生长了第一（Al，Ga）N层，则改变镓和/或铝的供应速率使得能够形成具有与第一（Al，Ga）N不同的铝摩尔分数的第二（Al，Ga）N层层由MBE在第一（Al，Ga）N层上生长。可以重复该过程以生长（Al，Ga）N多层结构。

6. 发明授权

US07648577B2 MBE growth of p-type nitride semiconductor materials 失效
标题翻译： p型氮化物半导体材料的MBE生长
公开(公告)号：US07648577B2
公开(公告)日：2010-01-19
申请号：US10536706
申请日：2003-11-27
申请人： Stewart E. Hooper , Katherine L. Johnson , Valerie Bousquet , Jonathan Heffernan
发明人： Stewart E. Hooper , Katherine L. Johnson , Valerie Bousquet , Jonathan Heffernan
IPC分类号： C30B25/14
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminum is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm−3, without the need for any post-growth step of activating the dopant atoms.
摘要翻译：通过分子束外延（MBE）生长p型氮化物半导体材料的方法使用双（环戊二烯基）镁（Cp2Mg）作为镁掺杂剂原子的源。使用氨气作为MBE生长过程的氮前体。为了生长p型GaN，例如，通过本发明的方法，将镓，氨和Cp2Mg供给至MBE生长室; 为了生长p型AlGaN，另外向生长室供给铝。本发明的生长方法通过室温霍尔效应测量产生高达2×1017cm-3的p型载流子浓度，而不需要任何激活掺杂剂原子的后期生长步骤。

7. 发明授权

US08468750B2 Method for sealing flashing joints below flashing 有权
标题翻译：闪烁接头闪烁的方法
公开(公告)号：US08468750B2
公开(公告)日：2013-06-25
申请号：US13110027
申请日：2011-05-18
申请人： Howard M. Clearfield , Gary D. Parsons , Katherine L. Johnson
发明人： Howard M. Clearfield , Gary D. Parsons , Katherine L. Johnson
IPC分类号： E04D1/36 , E04D13/14 , E04D3/38
CPC分类号： E04B2/707 , E04B1/70 , E04D13/1478
摘要： Seal a flashing joint on an open frame structure using a first barrier sheet having first and second adhesive strips on opposing primary surfaces proximate to opposing edges and running the length of the first barrier sheet by applying the first barrier sheet over the flashing joint with one edge below the flashing joint and adhering an adhesive strip to a building element below the flashing joint with the first adhesive strip and applying a second barrier sheet overlapping the first barrier sheet and adhere the first and second barrier sheets together using the second adhesive strip. The process can include applying flashing over the first barrier sheet and flashing joint and then overlaying the flashing with the second barrier sheet and sealing the second barrier sheet to both the first barrier sheet and the flashing.
摘要翻译：在开放的框架结构上使用第一阻挡片密封闪光接头，该第一阻挡片具有靠近相对边缘的相对的主表面上的第一和第二粘合带，并且通过将第一阻挡片施加在闪光接头上，在闪光接头下方，并且用第一粘合带将粘合带粘附到闪光接头下面的建筑元件上，并施加与第一阻挡片重叠的第二阻挡片，并使用第二粘合带将第一和第二阻挡片粘合在一起。该过程可以包括在第一阻挡片和闪光接头上施加闪光，然后将闪光覆盖在第二阻挡片上，并将第二阻挡片密封到第一阻挡片和闪光。

8. 发明申请

US20110296768A1 METHOD FOR SEALING FLASHING JOINTS BELOW FLASHING 有权
标题翻译：用于密封闪电接头的方法
公开(公告)号：US20110296768A1
公开(公告)日：2011-12-08
申请号：US13110027
申请日：2011-05-18
申请人： Howard M. Clearfield , Gary D. Parsons , Katherine L. Johnson
发明人： Howard M. Clearfield , Gary D. Parsons , Katherine L. Johnson
IPC分类号： E04B1/68 , E04B1/92
CPC分类号： E04B2/707 , E04B1/70 , E04D13/1478
摘要： Seal a flashing joint on an open frame structure using a first barrier sheet having first and second adhesive strips on opposing primary surfaces proximate to opposing edges and running the length of the first barrier sheet by applying the first barrier sheet over the flashing joint with one edge below the flashing joint and adhering an adhesive strip to a building element below the flashing joint with the first adhesive strip and applying a second barrier sheet overlapping the first barrier sheet and adhere the first and second barrier sheets together using the second adhesive strip. The process can include applying flashing over the first barrier sheet and flashing joint and then overlaying the flashing with the second barrier sheet and sealing the second barrier sheet to both the first barrier sheet and the flashing.
摘要翻译：在开放的框架结构上使用第一阻挡片密封闪光接头，该第一阻挡片具有靠近相对边缘的相对的主表面上的第一和第二粘合带，并且通过将第一阻挡片施加在闪光接头上，在闪光接头下方，并且用第一粘合带将粘合带粘附到闪光接头下面的建筑元件上，并施加与第一阻挡片重叠的第二阻挡片，并使用第二粘合带将第一和第二阻挡片粘合在一起。该过程可以包括在第一阻挡片和闪光接头上施加闪光，然后将闪光覆盖在第二阻挡片上，并将第二阻挡片密封到第一阻挡片和闪光。

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