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1. 发明授权

US06203611B1 Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth 有权
标题翻译：控制半导体晶体的生长自动从锥形生长转变为目标直径生长的方法
公开(公告)号：US06203611B1
公开(公告)日：2001-03-20
申请号：US09421187
申请日：1999-10-19
申请人： Steven L. Kimbel , Robert R. Wyand, III
发明人： Steven L. Kimbel , Robert R. Wyand, III
IPC分类号： C30B1526
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： A control method for use with a Czochralski crystal puller. The method includes pulling the growing crystal from the melt at a first target pull rate to grow a taper portion of the crystal and measuring the crystal diameter of the taper. The method also includes estimating a slope of the diameter as a function of a change in crystal diameter relative to time and the first target pull rate. The method further includes predicting a crystal diameter Di at which to initiate body growth from the taper as a function of the estimated slope. By increasing the pull rate to a second target pull rate when the measured crystal diameter reaches the predicted crystal diameter Di, the method controls growth of the crystal for transitioning from taper growth to body growth. The method also determines the second target pull rate as a function of the estimated slope when using a predefined diameter Di at which to initiate growth of the crystal body.
摘要翻译：一种用于Czochralski晶体拉拔器的控制方法。该方法包括以第一目标拉伸速率从熔体中拉伸生长的晶体，以生长晶体的锥形部分并测量锥形的晶体直径。该方法还包括估计作为晶体直径相对于时间的变化和第一目标拉伸速率的函数的直径的斜率。该方法还包括根据估计的斜率预测从锥度开始身体生长的晶体直径Di。当测量的晶体直径达到预测的晶体直径Di时，通过将拉伸速率提高到第二目标拉伸速率，该方法控制晶体从锥形增长转变为身体生长的生长。当使用预定直径Di以引发晶体生长时，该方法还确定第二目标拉拔率作为估计斜率的函数。

2. 发明授权

US06241818B1 Method and system of controlling taper growth in a semiconductor crystal growth process 有权
标题翻译：控制半导体晶体生长过程中锥度增长的方法和系统
公开(公告)号：US06241818B1
公开(公告)日：2001-06-05
申请号：US09287916
申请日：1999-04-07
申请人： Steven L. Kimbel , Robert R. Wyand, III
发明人： Steven L. Kimbel , Robert R. Wyand, III
IPC分类号： C30B1520
CPC分类号： C30B15/20 , C30B15/22 , Y10T117/1004 , Y10T117/1008
摘要： A method and system for controlling growth of a taper portion of a semiconductor single crystal based on the slope of the taper. A crystal drive unit pulls the growing crystal from a melt at a target pull rate that substantially follows an initial velocity profile for growing the taper. A controller calculates a taper slope measurement as a function of a change in crystal diameter relative to a change in crystal length. The controller then generates an error signal as a function of the difference between the taper slope measurement and a target taper slope and provides a pull rate correction to the crystal drive unit as a function of the error signal. In turn, the crystal drive unit adjusts the pull rate according to the pull rate correction to reduce the difference between the taper slope measurement and the target taper slope. The target taper slope is defined by a function having a generally exponential component and a generally linear component.
摘要翻译：一种用于基于锥度的斜率来控制半导体单晶的锥形部分的生长的方法和系统。晶体驱动单元以基本上遵循用于生长锥度的初始速度分布的目标拉伸速率从熔体中拉出生长的晶体。控制器根据晶体长度的变化来计算锥度斜率测量值作为晶体直径变化的函数。然后，控制器产生作为锥度斜率测量和目标锥形斜率之间的差的函数的误差信号，并且作为误差信号的函数向晶体驱动单元提供拉速校正。反过来，晶体驱动单元根据拉速率校正来调节拉速率，以减小锥度斜率测量与目标锥度斜率之间的差异。目标锥形斜率由具有大致指数分量和大致线性分量的函数限定。

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