专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5837058A High temperature susceptor 失效
标题翻译：高温感应器
公开(公告)号：US5837058A
公开(公告)日：1998-11-17
申请号：US680328
申请日：1996-07-12
申请人： Steven Aihua Chen , Ming Xi , Ruiping Wang
发明人： Steven Aihua Chen , Ming Xi , Ruiping Wang
IPC分类号： C23C16/44 , C23C16/458 , H01L21/205 , H01L21/683 , C23C16/00
CPC分类号： C23C16/4581
摘要： A susceptor with improved resistance to thermal cycling and chemical attack between processing and cleaning cycles. The susceptor comprises a top surface is surrounded by a lip, the lip having a beveled inner side, a top side, an outer side, a first rounded edge between the top side and the outer side, a second rounded edge between the top side and the inner side, and a third rounded edge between the inner side and the top surface. The susceptor comprises a body of graphite covered by a coating of aluminum nitride.
摘要翻译：具有改善的抗热循环耐受性和在处理和清洁循环之间的化学侵蚀的感受器。所述感受体包括顶表面，所述顶表面由唇缘包围，所述唇缘具有斜边的内侧，顶侧，外侧，在所述顶侧和外侧之间的第一圆形边缘，在所述顶侧和所述外侧之间的第二圆形边缘，内侧和内侧和顶表面之间的第三圆形边缘。感受体包括由氮化铝涂层覆盖的石墨体。

2. 发明授权

US08354038B2 Piezoelectric ceramic, and piezoelectric, dielectric or pyroelectric element using the same 有权
标题翻译：压电陶瓷，以及使用其的压电，电介质或热电元件
公开(公告)号：US08354038B2
公开(公告)日：2013-01-15
申请号：US12451495
申请日：2008-05-16
申请人： Ruiping Wang , Hiroshi Bando
发明人： Ruiping Wang , Hiroshi Bando
IPC分类号： C04B35/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2006/10 , C01P2006/40 , C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3258 , C04B2235/3267 , C04B2235/3281 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3298 , C04B2235/3418 , C04B2235/76 , C04B2235/765 , C04B2235/768 , C04B2235/77 , C04B2235/79 , C04B2235/85 , H01L37/025 , H01L41/1873
摘要： A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula: {Mx(NayLizK1-y-z)1-x}1-m{(Ti1-u-vZruHfv)x(Nb1-wTaw)1-x}O3 is disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (Bi0.5K0.5), (Bi0.5Na0.5) and (Bi0.5Li0.5) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06
摘要翻译：作为主要成分的压电固溶体组合物，含有以下通式表示的组成：{Mx（NayLizK1-yz）1-x} 1-m {（Ti1-u-vZruHfv）×（Nb1-wTaw）1 -x} O3。在该式中，M表示选自（Bi0.5K0.5），（Bi0.5Na0.5）和（Bi0.5Li0.5）中的至少一种的组合和选自由Ba，Sr，Ca和Mg组成的组; 在式中，x，y，z，u，v，w和m在以下范围内：0.06 n; 1，0＆nlE; v＆nlE; 0.75,0和nlE; w＆nlE; 0.2,0（u + v）＆nlE; 1和-0.06＆nlE; m＆nlE; 0.06。该固溶体组合物优选形成与PZT中相同的菱面体 - 四方晶形态相界，是环境友好的，并显示优异的压电常数d33。

3. 发明授权

US07153804B2 Catalyst component for ethylene polymerization, the preparation thereof and catalyst comprising the same 有权
标题翻译：用于乙烯聚合的催化剂组分，其制备方法和包含其的催化剂
公开(公告)号：US07153804B2
公开(公告)日：2006-12-26
申请号：US11104976
申请日：2005-04-12
申请人： Wei Chen , Zifang Guo , Junling Zhou , Hongxu Yang , Ruixia Li , Ruiping Wang , Yuexiang Liu , Hongtao Wang , Jingmei Zhang , Xiaojing Cheng
发明人： Wei Chen , Zifang Guo , Junling Zhou , Hongxu Yang , Ruixia Li , Ruiping Wang , Yuexiang Liu , Hongtao Wang , Jingmei Zhang , Xiaojing Cheng
IPC分类号： B01J31/00 , C08F4/44
CPC分类号： C08F10/00 , C08F110/02 , C08F4/651 , C08F4/6555 , C08F2500/12 , C08F2500/18 , C08F2500/24 , C08F4/025
摘要： The present invention provides a catalyst component for ethylene polymerization, a process for preparing the same, a catalyst comprising the same, and a process for polymerizing ethylene using the catalyst. The catalyst component comprises a reaction product, supported on an inorganic oxide support, of a magnesium complex, a titanium compound, an alcohol compound, and an organoaluminum compound, wherein said magnesium complex is formed by dissolving a magnesium halide in a solvent system comprising an organic epoxy compound and an organo phosphorus compound. The catalyst according to the invention is especially suitable for slurry phase polymerization of ethylene. The catalyst according to the present invention has high catalytic activity, and a good hydrogen response, with the resultant polymer having a more uniform particle size diameter and a narrow particle size distribution.
摘要翻译：本发明提供了用于乙烯聚合的催化剂组分，其制备方法，包含该催化剂组合物的催化剂，以及使用该催化剂使乙烯聚合的方法。催化剂组分包括负载在无机氧化物载体上的镁络合物，钛化合物，醇化合物和有机铝化合物的反应产物，其中所述镁络合物是通过将卤化镁溶解在包含有机环氧化合物和有机磷化合物。根据本发明的催化剂特别适用于乙烯的淤浆相聚合。根据本发明的催化剂具有高催化活性和良好的氢响应，所得聚合物具有更均匀的粒径直径和窄的粒度分布。

4. 发明申请

US20060275835A1 Methods for identifying cell surface receptor protein modulators 审中-公开
标题翻译：识别细胞表面受体蛋白调节剂的方法
公开(公告)号：US20060275835A1
公开(公告)日：2006-12-07
申请号：US10563692
申请日：2004-07-09
申请人： Marlene Jacobson , Ruiping Wang
发明人： Marlene Jacobson , Ruiping Wang
IPC分类号： G01N33/567 , G01N33/53
CPC分类号： G01N33/502 , G01N33/5008 , G01N33/5032 , G01N33/5038 , G01N33/5041 , G01N33/6872 , G01N33/9406 , G01N2333/70571
摘要： The present invention makes available a rapid, effective assay for screening and identifying pharmaceutically effective compounds that specifically interact with and modulate the activity of a target cell surface protein, e.g., a receptor or ion channel. The subject assay enables rapid screening of large numbers of compounds to identify those which modulate the bioactivity of the cellular proteins. The subject assays are particularly amenable for high throughput formats and are particular useful in identifying modulators of a mammalian metabotropic glutamate receptor protein.
摘要翻译：本发明提供用于筛选和鉴定与靶细胞表面蛋白例如受体或离子通道特异性相互作用并调节靶细胞表面蛋白质的活性的药学有效化合物的快速，有效的测定。主题测定可以快速筛选大量化合物，以鉴定调节细胞蛋白生物活性的化合物。主题测定特别适用于高通量形式，并且特别可用于鉴定哺乳动物代谢型谷氨酸受体蛋白的调节剂。

5. 发明授权

US06800213B2 Precision dielectric etch using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的精密电介质蚀刻
公开(公告)号：US06800213B2
公开(公告)日：2004-10-05
申请号：US10165249
申请日：2002-06-07
申请人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
发明人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
摘要翻译：具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方。选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例的前两个选择的比例F / C在1.5和2之间。

6. 发明授权

US06291357B1 Method and apparatus for etching a substrate with reduced microloading 失效
标题翻译：减少微加载蚀刻基板的方法和装置
公开(公告)号：US06291357B1
公开(公告)日：2001-09-18
申请号：US09414329
申请日：1999-10-06
申请人： Luke Zhang , Ruiping Wang , Ida Ariani Adisaputro , Kwang-Soo Kim
发明人： Luke Zhang , Ruiping Wang , Ida Ariani Adisaputro , Kwang-Soo Kim
IPC分类号： H01L2100
CPC分类号： H01L21/67069
摘要： A substrate 20 is placed in a process zone 115 of a process chamber 110, process gas is introduced into the process zone 115, and an energized gas is formed in the process zone 115. First process conditions are set to form etch-passivating deposits onto a surface 22 of the substrate 20. Second process conditions are set to etch the surface 22 of the substrate 20. The etch-passivating deposits formed before the etching process improve etching uniformity and reduce etch-rate microloading.
摘要翻译：将衬底20放置在处理室110的处理区115中，将工艺气体引入处理区115中，并且在处理区115中形成通电的气体。首先设置工艺条件以形成蚀刻钝化沉积物设置衬底20的表面22.设定第二工艺条件以蚀刻衬底20的表面22.在蚀刻工艺之前形成的蚀刻钝化沉积改善了蚀刻均匀性并降低了蚀刻速率的微加载。

7. 发明授权

US6074959A Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide 失效
标题翻译：表现出广泛的工艺窗口并使用六氟丙烷或其他氢氟丙烷来选择性地蚀刻氧化物的方法
公开(公告)号：US6074959A
公开(公告)日：2000-06-13
申请号：US964504
申请日：1997-11-05
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料进行高选择性且无蚀刻停止的自对准接触蚀刻或其他高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烷（C 3 H 2 F 6）是在大量惰性气体如氩气存在下的主蚀刻气体。该方法也可与紧密相关的气体七氟丙烷（C 3 H F 7）和五氟丙烷（C 3 H 3 F 5）一起使用。该方法可以使用一种或多种这些气体的比例来优化比其它材料的选择性，而不会在狭窄的接触孔中和在宽的工艺窗口中发生蚀刻停止。二氟甲烷（CH 2 F 2）或其它碳氟化合物可与上述气体组合，以获得特定接触特征设计的最佳选择性。

8. 发明申请

US20100203243A1 METHOD FOR FORMING A POLYSILICON FILM 审中-公开
标题翻译：形成多晶硅膜的方法
公开(公告)号：US20100203243A1
公开(公告)日：2010-08-12
申请号：US12066384
申请日：2007-12-27
申请人： Ruiping Wang , Ji Yue Tang , Zhibiao Zhao , Zhijun Fang , Kailash Pradhan , Sean Michael Seutter
发明人： Ruiping Wang , Ji Yue Tang , Zhibiao Zhao , Zhijun Fang , Kailash Pradhan , Sean Michael Seutter
IPC分类号： C23C16/44 , C23C16/42
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/56 , H01L21/0245 , H01L21/0262
摘要： A method is provided for forming a poly-crystalline silicon film on a substrate. In one embodiment, the method comprises positioning a substrate within a processing chamber, heating the processing chamber to a deposition temperature, introducing a first silicon precursor into the processing chamber to form a buffer layer including crystal nuclei, introducing a second silicon precursor into the processing chamber to form a polysilicon film on the buffer layer, and then annealing the polysilicon film and the buffer layer.
摘要翻译：提供了在基板上形成多晶硅膜的方法。在一个实施例中，该方法包括将衬底定位在处理室内，将处理室加热到沉积温度，将第一硅前体引入处理室中以形成包括晶核的缓冲层，将第二硅前体引入到处理在缓冲层上形成多晶硅膜，然后对多晶硅膜和缓冲层进行退火。

9. 发明申请

US20090318643A1 Catalyst Component for Ethylene Polymerization, Preparation Thereof and Catalyst Comprising the Same 审中-公开
标题翻译：用于乙烯聚合的催化剂组分，其制备方法和包含其的催化剂
公开(公告)号：US20090318643A1
公开(公告)日：2009-12-24
申请号：US12084258
申请日：2006-10-31
申请人： Wei Chen , Zifang Guo , Junling Zhou , Hongtao Wang , Hongxu Yang , Ruixia Li , Ruiping Wang
发明人： Wei Chen , Zifang Guo , Junling Zhou , Hongtao Wang , Hongxu Yang , Ruixia Li , Ruiping Wang
IPC分类号： C08F4/12 , B01J31/12
CPC分类号： C08F10/02 , B01J31/128 , C08F10/00 , C08F110/02 , C08F4/6586 , C08F4/6567 , C08F4/651 , C08F2500/12 , C08F2500/18 , C08F2500/24 , C08F4/6565
摘要： The present invention relates to a catalyst component for ethylene polymerization, which comprises a reaction product of a magnesium complex, at least one titanium compound, at least one alcohol compound, at least one silicon compound, and optionally an organic aluminum compound. The silicon compound is an organic silicon compound having a general formula R1xR2ySi(OR3)z, in which R1 and R2 are independently a hydrocarbyl or a halogen, R3 is a hydrocarbyl, 0≦x≦2, 0≦y≦2, 0≦z≦4, and x+y+z=4. The present invention further relates to a method for the preparation of the catalyst component and to a catalyst comprising the same. The catalysts according to the invention have virtues such as high catalytic activity, good hydrogen response, and narrow particle size distribution of polymer, and are especially suitable for a slurry process of ethylene polymerization and a combined process of ethylene polymerization, which requires a high activity of catalyst.
摘要翻译：本发明涉及一种用于乙烯聚合的催化剂组分，其包括镁络合物，至少一种钛化合物，至少一种醇化合物，至少一种硅化合物和任选的有机铝化合物的反应产物。硅化合物是具有通式R1xR2ySi（OR3）z的有机硅化合物，其中R 1和R 2独立地是烃基或卤素，R 3是烃基，0 <= x <= 2,0 <= y < 2，0 <= z <= 4，x + y + z = 4。本发明还涉及制备催化剂组分的方法和包含该催化剂组分的催化剂。根据本发明的催化剂具有诸如高催化活性，良好的氢响应和聚合物的窄粒度分布等优点，并且特别适用于乙烯聚合和乙烯聚合的组合方法的浆料方法，其需要高活性的催化剂。

10. 发明授权

US06183655B2 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon 失效
标题翻译：使用氟丙烯和氢氟烃选择性地蚀刻氧化物的可调谐方法
公开(公告)号：US06183655B2
公开(公告)日：2001-02-06
申请号：US09049862
申请日：1998-03-27
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： C03C2568
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料的高选择性并且不产生蚀刻停止的自对准接触蚀刻或其它高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烯（C 3 F 6）是主要的蚀刻气体，并且至少部分地由于其聚合物形成能力而添加另一种氢氟烃，例如CH 2 F 2或C 3 H 2 F 6，这增加了蚀刻氧化物对氮化物的选择性。工艺气体还包括大量惰性气体如氩气。工艺气体混合物可以在有效蚀刻气体和聚合物成型剂之间以比例平衡，以优于其它材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式