专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07626682B2 Reticle stages for lithography systems and lithography methods 有权
标题翻译：用于光刻系统和光刻方法的掩模版阶段
公开(公告)号：US07626682B2
公开(公告)日：2009-12-01
申请号：US11403483
申请日：2006-04-13
申请人： Stefan Wurm , Siegfried Schwarzl
发明人： Stefan Wurm , Siegfried Schwarzl
IPC分类号： G03B27/62 , G03B27/42
CPC分类号： G03B27/62 , G03F7/707
摘要： Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.
摘要翻译：公开了用于光刻系统和光刻方法的掩模版阶段。在优选实施例中，光刻掩模版台包括适于支撑第一掩模版的第一区域和适于支撑第二掩模版的至少一个第二区域。

2. 发明申请

US20080204695A1 EUV Lithography System and Chuck for Releasing Reticle in a Vacuum Isolated Environment 审中-公开
标题翻译： EUV光刻系统和Chuck在真空隔离环境中释放光罩
公开(公告)号：US20080204695A1
公开(公告)日：2008-08-28
申请号：US12110062
申请日：2008-04-25
申请人： Siegfried Schwarzl , Stefan Wurm
发明人： Siegfried Schwarzl , Stefan Wurm
IPC分类号： G03B27/62
CPC分类号： G03F7/70841 , G03F7/707 , G03F7/70708
摘要： A method for providing a vacuum isolated environment in a lithography system is disclosed. The method for dechucking a reticle includes providing a mask chamber having one or more vacuum valves for isolating the mask chamber from the lithography system. The one or more vacuum valves are closed to isolate the mask chamber from the rest of the lithography system. After the mask chamber is isolated, an inert gas is provided to the mask chamber to dechuck the reticle.
摘要翻译：公开了一种在光刻系统中提供真空隔离环境的方法。用于去除标线的方法包括提供具有一个或多个真空阀的掩模室，用于将掩模室与光刻系统隔离。一个或多个真空阀关闭以将掩模室与光刻系统的其余部分隔离。在隔离罩室之后，向掩模室提供惰性气体以将标线卡住。

3. 发明授权

US07407729B2 EUV magnetic contrast lithography mask and manufacture thereof 有权
标题翻译： EUV磁对比光刻掩模及其制造
公开(公告)号：US07407729B2
公开(公告)日：2008-08-05
申请号：US10912658
申请日：2004-08-05
申请人： Siegfried Schwarzl , Stefan Wurm
发明人： Siegfried Schwarzl , Stefan Wurm
IPC分类号： G03F1/00
CPC分类号： G03F1/84 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： An EUV Lithography mask, a fabrication method, and use method thereof is provided. A preferred embodiment comprises a substrate, a Bragg reflector disposed upon the substrate, a buffer disposed upon the Bragg reflector, and an absorber layer disposed upon the buffer. The materials in the mask have selected magnetic properties. In a preferred embodiment, the buffer is a hard magnetic material, and the absorber is a soft magnetic material. Another preferred embodiment includes a mask manufacturing method further including a mask step. In a preferred embodiment, an electron mirror microscope is used to inspect the mask by imaging its topography with respect to its magnetic properties in an applied magnetic field.
摘要翻译：提供了一种EUV平版印刷掩模，其制造方法及其使用方法。优选实施例包括衬底，布置在衬底上的布拉格反射器，设置在布拉格反射器上的缓冲器和设置在缓冲器上的吸收层。掩模中的材料已经选择了磁性。在优选实施例中，缓冲器是硬磁性材料，吸收体是软磁性材料。另一个优选实施例包括还包括掩模步骤的掩模制造方法。在优选实施例中，电子镜显微镜用于通过在施加的磁场中相对于其磁特性对其形貌进行成像来检查掩模。

4. 发明申请

US20080037000A1 Method for Determining a Radiation Power and an Exposure Apparatus 失效
公开(公告)号：US20080037000A1
公开(公告)日：2008-02-14
申请号：US10599428
申请日：2005-03-31
申请人： Siegfried Schwarzl , Stefan Wurm
发明人： Siegfried Schwarzl , Stefan Wurm
IPC分类号： G01J3/00 , G01J5/46 , G01N21/55
CPC分类号： G03F7/70558 , G03F7/7085
摘要： Method for determining a mean radiation power P rad 0 _ of electromagnetic radiation of a radiation source, the radiation being intensity-modulated with modulation frequency ω0, in a predetermined time interval. The method provides a reflector designed to reflect electromagnetic radiation of the radiation source and electromagnetic radiation of a test radiation source, irradiates a predetermined area of the reflector with the source electromagnetic radiation, at least partially irradiates the predetermined area of the reflector with electromagnetic radiation of the test radiation source, measures a ω0-modulated power component Ptest,ω0(t) of a reflected test radiation power Ptest(t) of an electromagnetic radiation of the test radiation source, the radiation being reflected from the area, in the predetermined time interval, determines a mean value P test , ω 0 0 _ of the measured ω0-modulated power component Ptest,ω0(t) of the reflected test radiation power Ptest(t) in the predetermined time interval, and determines the mean radiation power P rad 0 _ from the relationship P rad 0 _ = a · P test , ω 0 0 _ , where a is a predetermined constant.

5. 发明授权

US07029808B2 Photosensitive coating material for a substrate and process for exposing the coated substrate 失效
标题翻译：用于基材的感光涂层材料和用于曝光涂覆的基材的方法
公开(公告)号：US07029808B2
公开(公告)日：2006-04-18
申请号：US10673964
申请日：2003-09-29
申请人： Jenspeter Rau , Siegfried Schwarzl , Stefan Wurm
发明人： Jenspeter Rau , Siegfried Schwarzl , Stefan Wurm
IPC分类号： G03C5/02 , G03F7/20 , G03F7/039
CPC分类号： G03F7/105 , Y10S430/115 , Y10S430/134
摘要： A radiation-sensitive coating material, in addition to a base polymer, has a solvent and a radiation-active substance which forms an acid on irradiation by light (including energetic electrons or ions), a fluorescent substance which alters its fluorescence property subject to a change in the acid content of its surroundings. In a process for exposing a substrate coated with the coating material at least one sensor in the exposure chamber of the exposure apparatus measures the intensity of the change in fluorescence spectrum as a function of time during the exposure operation. From the course of intensity at the time of an individual line of the fluorescence spectrum or the intensity integrated over a wavelength interval it is possible to determine the endpoint of the exposure operation by way of electronic algorithms. Deviations from experimentally determined ideal curves of the intensity course provide information on erroneous functions in the course of coating material application and exposure.
摘要翻译：除了基础聚合物之外，辐射敏感性涂层材料具有溶剂和辐射活性物质，其在光照射下（包括能量电子或离子）形成酸，荧光物质改变其荧光性质改变其周围的酸含量。在用涂布材料曝光的基材的曝光过程中，曝光装置的曝光室中的至少一个传感器在曝光操作期间测量作为时间的函数的荧光光谱的变化强度。从荧光光谱的单独行的强度或在波长间隔上积分的强度的过程中，可以通过电子算法确定曝光操作的终点。与实验确定的强度曲线的偏差提供了涂料应用和曝光过程中错误功能的信息。

6. 发明申请

US20100119981A1 Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography 有权
公开(公告)号：US20100119981A1
公开(公告)日：2010-05-13
申请号：US12692243
申请日：2010-01-22
申请人： Siegfried Schwarzl , Stefan Wurm
发明人： Siegfried Schwarzl , Stefan Wurm
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , B82Y10/00 , G03F7/70316 , G03F7/70916 , G21K1/062 , Y10T428/12667
摘要： A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.

7. 发明授权

US07417736B2 Method for determining a radiation power and an exposure apparatus 失效
公开(公告)号：US07417736B2
公开(公告)日：2008-08-26
申请号：US10599428
申请日：2005-03-31
申请人： Siegfried Schwarzl , Stefan Wurm
发明人： Siegfried Schwarzl , Stefan Wurm
IPC分类号： G01J3/00 , G01J5/46 , G01N21/55 , H01L31/00
CPC分类号： G03F7/70558 , G03F7/7085
摘要： Method for determining a mean radiation power P rad 0 _ of electromagnetic radiation of a radiation source, the radiation being intensity-modulated with modulation frequency ω0, in a predetermined time interval. The method provides a reflector designed to reflect electromagnetic radiation of the radiation source and electromagnetic radiation of a test radiation source, irradiates a predetermined area of the reflector with the source electromagnetic radiation, at least partially irradiates the predetermined area of the reflector with electromagnetic radiation of the test radiation source, measures a ω0-modulated power component Ptest,ω0(t) of a reflected test radiation power Ptest(t) of an electromagnetic radiation of the test radiation source, the radiation being reflected from the area, in the predetermined time interval, determines a mean value P test , ω 0 0 _ of the measured ω0-modulated power component Ptest,ω0(t) of the reflected test radiation power Ptest(t) in the predetermined time interval, and determines the mean radiation power P rad 0 _ from the relationship P rad 0 _ = a · P test , ω 0 0 _ , where a is a predetermined constant.

8. 发明授权

US07078134B2 Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating 失效
标题翻译：具有仅由几个原子层覆盖的薄保护涂层的结构区域的光刻掩模和用于制造掩模的方法，包括ALCVD以形成薄的保护涂层
公开(公告)号：US07078134B2
公开(公告)日：2006-07-18
申请号：US10442739
申请日：2003-05-21
申请人： Stefan Wurm , Siegfried Schwarzl
发明人： Stefan Wurm , Siegfried Schwarzl
IPC分类号： G03F1/14 , G03F1/08 , G21K5/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/48 , Y10S430/162
摘要： A photolithographic mask for patterning a photosensitive material, in particular on a wafer, has at least one structure region for imaging a structure on the photosensitive material, and an absorber structure for absorbing incident radiation. At least one structure region is provided and has at least one thin protective coating of only a few atomic layers made of chemically and mechanically resistive material selected from Al2O3, Ta2O5, ZrO2, and HfO2formed by atomic layer chemical vapor deposition (ALCVD) so that the protective coating constitutes a negligible alteration of nominal or critical dimensions for the structure region, and in which additional absorption or reflection losses are negligibly low. In this way, the photolithographic mask can be cleaned chemically and/or mechanically, without the structure regions being attacked and damaged by the chemical and/or mechanical cleaning media. Furthermore, a plurality of methods are possible for fabricating this photolithographic mask.
摘要翻译：用于图案化感光材料，特别是在晶片上的光刻掩模具有用于对感光材料上的结构进行成像的至少一个结构区域和用于吸收入射辐射的吸收体结构。提供至少一个结构区域，并且具有由化学和机械电阻材料制成的仅几个原子层的至少一个薄保护涂层，其选自Al 2 O 3，Ta 通过原子层化学气相沉积（ALCVD）形成的O 2 O 5，ZrO 2 2和HfO 2 2，使得保护涂层构成对于结构区域的标称或临界尺寸的可忽略的变化，并且附加的吸收或反射损失可忽略不计。以这种方式，可以化学和/或机械地清洁光刻掩模，而不会使结构区域被化学和/或机械清洁介质侵蚀和损坏。此外，制造这种光刻掩模的方法是可能的。

9. 发明申请

US20060147839A1 Photosensitive coating material for a substrate 审中-公开
标题翻译：用于基材的感光涂料
公开(公告)号：US20060147839A1
公开(公告)日：2006-07-06
申请号：US11370388
申请日：2006-03-06
申请人： Jenspeter Rau , Siegfried Schwarzl , Stefan Wurm
发明人： Jenspeter Rau , Siegfried Schwarzl , Stefan Wurm
IPC分类号： G03C1/76
CPC分类号： G03F7/105 , Y10S430/115 , Y10S430/134
摘要： A radiation-sensitive coating material, in addition to a base polymer, has a solvent and a radiation-active substance which forms an acid on irradiation by light (including energetic electrons or ions), a fluorescent substance which alters its fluorescence property subject to a change in the acid content of its surroundings. In a process for exposing a substrate coated with the coating material at least one sensor in the exposure chamber of the exposure apparatus measures the intensity of the change in fluorescence spectrum as a function of time during the exposure operation. From the course of intensity at the time of an individual line of the fluorescence spectrum or the intensity integrated over a wavelength interval it is possible to determine the endpoint of the exposure operation by way of electronic algorithms. Deviations from experimentally determined ideal curves of the intensity course provide information on erroneous functions in the course of coating material application and exposure.
摘要翻译：除了基础聚合物之外，辐射敏感性涂层材料具有溶剂和辐射活性物质，其在光照射下（包括能量电子或离子）形成酸，荧光物质改变其荧光性质改变其周围的酸含量。在用涂布材料曝光的基材的曝光过程中，曝光装置的曝光室中的至少一个传感器在曝光操作期间测量作为时间的函数的荧光光谱的变化强度。从荧光光谱的单独行的强度或在波长间隔上积分的强度的过程中，可以通过电子算法确定曝光操作的终点。与实验确定的强度曲线的偏差提供了涂料应用和曝光过程中错误功能的信息。

10. 发明授权

US07859648B2 Passivation of multi-layer mirror for extreme ultraviolet lithography 有权
标题翻译：钝化多层镜面进行极紫外光刻
公开(公告)号：US07859648B2
公开(公告)日：2010-12-28
申请号：US12624263
申请日：2009-11-23
申请人： Siegfried Schwarzl , Stefan Wurm
发明人： Siegfried Schwarzl , Stefan Wurm
IPC分类号： G02B1/10 , G02B5/08
CPC分类号： G03F7/70958 , B82Y10/00 , G03F7/70316 , G03F7/70916 , G21K1/062 , Y10T428/12667
摘要： A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.
摘要翻译：提供了适用于极紫外光刻（EUVL）的反射器结构。该结构包括具有多层反射器的基板。在多层反射器上形成覆盖层以防止氧化。在一个实施方案中，封盖层由惰性氧化物如Al 2 O 3，HfO 2，ZrO 2，Ta 2 O 5，Y 2 O 3稳定的ZrO 2等形成。覆盖层可以通过在氧环境中的反应溅射，通过非反应性溅射形成，其中材料直接从相应的氧化物靶溅射，通过金属层的非反应性溅射，然后进行全部或部分氧化（例如，通过通过在含氧等离子体中氧化，通过氧化在臭氧（O3）等中），通过原子级沉积（例如，ALCVD）等进行自然氧化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式