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1. 发明授权

US11165002B2 Light-emitting device 有权
公开(公告)号：US11165002B2
公开(公告)日：2021-11-02
申请号：US16630743
申请日：2017-08-30
申请人： Soko Kagaku Co., Ltd. , AGC INC.
发明人： Akira Hirano , Yosuke Nagasawa , Masamichi Ippommatsu , Ko Aosaki , Yuki Suehara , Yoshihiko Sakane
IPC分类号： H01L33/56 , H01L33/54 , H01L33/58 , H01L33/62
摘要： A light-emitting device 1 comprises a base 30, a nitride semiconductor light-emitting element 10 flip-chip mounted on the base 30, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element 10. The light-emitting device 1 comprises a deformation-prevention layer 60 for preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device 1, and the deformation-prevention layer 60 is formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

2. 发明授权

US11107961B2 Ultraviolet light-emitting device, method for manufacturing ultraviolet light-emitting device and method for manufacturing ultraviolet light-emitting module 有权
公开(公告)号：US11107961B2
公开(公告)日：2021-08-31
申请号：US16753714
申请日：2017-11-02
申请人： Soko Kagaku Co., Ltd. , AGC INC.
发明人： Akira Hirano , Yosuke Nagasawa , Masamichi Ippommatsu , Ko Aosaki , Yuki Suehara , Yoshihiko Sakane
IPC分类号： H01L33/58 , H01L33/00 , H01L33/32 , H01L33/56 , H01L33/62
摘要： The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm3.

3. 发明授权

US10388834B2 Nitride semiconductor wafer, manufacturing method thereof, nitride semiconductor ultraviolet light-emitting element, and nitride semiconductor ultraviolet light-emitting device 有权
公开(公告)号：US10388834B2
公开(公告)日：2019-08-20
申请号：US15736253
申请日：2016-08-02
申请人： Soko Kagaku Co., Ltd. , AGC INC.
发明人： Akira Hirano , Ko Aosaki
IPC分类号： H01L33/00 , H01L33/44 , H01L21/288 , H01L33/56 , H01L33/32 , H01L33/38
摘要： To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, there is provided a nitride semiconductor wafer having ultraviolet light-emitting elements on a substrate 12, each element including a semiconductor laminated portion 21 constituted by an n-type AlGaN layer 16, an active layer 17 composed of an AlGaN layer, and p-type AlGaN layers 19 and 20, an n-electrode 23, a p-electrode 22, a protective insulating film 24, first and second plated electrodes 25 and 26, and a fluororesin film 27. The p-electrode is formed on an upper surface of the p-type AlGaN layer in the first region R1 and the n-electrode is formed on an upper surface of the n-type AlGaN layer in the second region R2. The protective insulating film has openings for exposing at least parts of the n-electrode and the p-electrode. The first plated electrode is spaced apart from the second plated electrode, contacts the p-electrode, and covers an upper surface and an entire outer circumferential side surface of the first region R1 and a part of the second region R2 that contacts the first region R1. The second plated electrode contacts the n-electrode and the fluororesin film 27 covers side wall surfaces of the first and second plated electrodes and a bottom surface of a gap part 31.

4. 发明授权

US10412829B2 Nitride semiconductor light-emitting element base and manufacturing method thereof 有权
公开(公告)号：US10412829B2
公开(公告)日：2019-09-10
申请号：US15742190
申请日：2016-08-02
申请人： Soko Kagaku Co., Ltd. , AGC INC.
发明人： Akira Hirano , Ko Aosaki
IPC分类号： H05K1/11 , H05K1/03 , H05K3/28 , H01L33/32 , H01L33/62 , H05K1/09 , H05K3/00 , H05K3/40 , H05K3/46 , H01L33/56
摘要： To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a base 10 that comprises an insulating base material 11 and two or more metal films 12 and 13 that are formed on one side of the insulating base material 11 and electrically separated from each other. The two or more metal films are formed to include an upper surface and a side wall surface that are covered by gold or a platinum group metal, to be capable of mounting thereon one or more nitride semiconductor light-emitting elements and the like, and to have, as a whole, a predetermined planar view shape including two or more electrode pads. On the one side of the base material 11, along a boundary line between an exposed surface of the base material 11 that is not covered by the metal film 12, 13 and a side wall surface of the metal film 12, 13, at least a first part of the exposed surface of the base material 11 continuous with the boundary line that is sandwiched between two adjacent electrode pads and the side wall surfaces of the metal films 12 and 13 that oppose to each other with the first part interposed therebetween are covered by a fluororesin film 16, and a part of an upper surface of the metal film 12, 13 that composes at least the electrode pad is not covered by the fluororesin film 16.

5. 发明授权

US10361346B2 Nitride semiconductor ultraviolet light emitting device and method for manufacturing same 有权
公开(公告)号：US10361346B2
公开(公告)日：2019-07-23
申请号：US15757203
申请日：2015-10-27
申请人： Soko Kagaku Co., Ltd. , AGC INC.
发明人： Akira Hirano , Ko Aosaki
IPC分类号： H01L31/0312 , H01L33/56 , H01L33/20 , H01L33/00 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62 , H01L33/54
摘要： A nitride semiconductor ultraviolet light emitting device 1 is configured such that a nitride semiconductor ultraviolet light emitting element 10 is mounted on a base 30 by flip-chip mounting and sealed with an amorphous fluororesin whose terminal functional group is perfluoroalkyl group. The nitride semiconductor ultraviolet light emitting element 10 includes a sapphire substrate 11, a semiconductor laminated portion 12 of an AlGaN-based semiconductor laminated on a front surface of the sapphire substrate 11, an n electrode 13, a p electrode 14 and a back surface covering layer 15 which is formed on a back surface of the sapphire substrate 11 and transmits ultraviolet light. The back surface covering layer 15 has apertures 16 through which a part of the back surface of the sapphire substrate 11 is exposed, the apertures 16 is uniformly dispersed or distributed on the back surface of the sapphire substrate, a cross-sectional shape of the apertures 16 vertical to the back surface of the sapphire substrate 11 has a portion where an aperture width of a part close to the back surface is wider than an aperture width of a part far from the back surface, and the amorphous fluororesin covers the front surface of the back surface covering layer 15 and fills insides of the apertures 16.

6. 发明授权

US09450157B2 Ultraviolet light emitting device using metal non-bondable amorphous fluororesin molding compound 有权
标题翻译：紫外线发光装置采用金属非键合无定形氟树脂模塑料
公开(公告)号：US09450157B2
公开(公告)日：2016-09-20
申请号：US14416198
申请日：2014-04-17
申请人： Soko Kagaku Co., Ltd. , Asahi Glass Company, Limited
发明人： Kiho Yamada , Shoko Nagai , Yuta Furusawa , Akira Hirano , Masamichi Ippommatsu , Ko Aosaki , Naoki Morishima
IPC分类号： H01L33/56 , H01L33/32 , H01L33/62
CPC分类号： H01L33/56 , H01L33/32 , H01L33/62 , H01L2224/14 , H01L2224/16225 , H01L2224/8192
摘要： An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).
摘要翻译：通过防止与紫外线发射操作相关联并由密封树脂引起的电特性的劣化来提供具有高质量和高可靠性的紫外线发射装置。紫外光发射装置是一种紫外线发射装置，包括：由氮化物半导体形成的紫外线发光元件; 以及覆盖所述紫外线发光元件（2）的紫外线透明密封树脂（3），其中，至少与所述密封树脂（3）的特定部分（3a）接触，所述特定部分（3a）与焊盘电极（18）和（17 ）是第一种无定形氟树脂，形成第一类非晶态氟树脂的聚合物或共聚物的末端官能团是不与金属结合的非反应性末端官能团，形成焊盘电极（16）和（17）。

7. 发明申请

US20150243856A1 ULTRAVIOLET LIGHT EMITTING DEVICE 有权
标题翻译：超紫外线发光装置
公开(公告)号：US20150243856A1
公开(公告)日：2015-08-27
申请号：US14416198
申请日：2014-04-17
申请人： Soko Kagaku Co., Ltd. , Asahi Glass Company, Limited
发明人： Kiho Yamada , Shoko Nagai , Yuta Furusawa , Akira Hirano , Masamichi Ippommatsu , Ko Aosaki , Naoki Morishima
IPC分类号： H01L33/56 , H01L33/62 , H01L33/32
CPC分类号： H01L33/56 , H01L33/32 , H01L33/62 , H01L2224/14 , H01L2224/16225 , H01L2224/8192
摘要： An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).
摘要翻译：通过防止与紫外线发射操作相关联并由密封树脂引起的电特性的劣化来提供具有高质量和高可靠性的紫外线发射装置。紫外光发射装置是一种紫外线发射装置，包括：由氮化物半导体形成的紫外线发光元件; 以及覆盖所述紫外线发光元件（2）的紫外线透明密封树脂（3），其中，至少与所述密封树脂（3）的特定部分（3a）接触，所述特定部分（3a）与焊盘电极（18）和（17 ）是第一种无定形氟树脂，形成第一类非晶态氟树脂的聚合物或共聚物的末端官能团是不与金属结合的非反应性末端官能团，形成焊盘电极（16）和（17）。

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