专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06251544B1 Exposure dose measuring method and exposure dose measuring mask 有权
标题翻译：曝光剂量测量方法和曝光剂量测量面膜
公开(公告)号：US06251544B1
公开(公告)日：2001-06-26
申请号：US09334941
申请日：1999-06-17
申请人： Soichi Inoue , Shinichi Ito , Kei Hayasaki
发明人： Soichi Inoue , Shinichi Ito , Kei Hayasaki
IPC分类号： G03F900
CPC分类号： G03F7/70558 , G03F1/44
摘要： In an exposure dose measuring method for measuring an effective exposure dose on a wafer by printing mask patterns formed on a mask onto a resist coated on the wafer by exposure, each of the mask patterns has light transmitting sections and light shielding sections repeated in a period p, a ratio of areas of the light transmitting sections to areas of the light shielding sections of each of the mask patterns differs from ratios of those of the others of the mask patterns, and the period p is set so as to satisfy a relationship of p/M≦&lgr;/(1+&sgr;)NA, where an exposure light wavelength at the time of exposing the mask patterns is &lgr;, a numerical aperture at a wafer side is NA, an illumination coherence factor is &sgr;, and a mask pattern magnification for patterns to be formed on the wafer is M.
摘要翻译：在曝光剂量测量方法中，通过将掩模上形成的掩模图案通过曝光印刷在涂覆在晶片上的抗蚀剂上来测量晶片上的有效曝光剂量，每个掩模图案具有在一段时间内重复的透光部分和遮光部分 p，光透射部分的面积与每个掩模图案的遮光部分的面积的比率与其他掩模图案的比率的比率不同，并且周期p被设定为满足其中的关系曝光掩模图案时的曝光光波长为羔羊，晶圆侧的数值孔径为NA，照度相干系数为西格玛，在晶片上形成的图案的掩模图案放大率为M.

2. 发明授权

US06423977B1 Pattern size evaluation apparatus 失效
标题翻译：图案尺寸评估装置
公开(公告)号：US06423977B1
公开(公告)日：2002-07-23
申请号：US09030510
申请日：1998-02-25
申请人： Kei Hayasaki , Shinichi Ito , Kenji Kawano , Soichi Inoue , Katsuya Okumura
发明人： Kei Hayasaki , Shinichi Ito , Kenji Kawano , Soichi Inoue , Katsuya Okumura
IPC分类号： G01N2186
CPC分类号： G01N21/956
摘要： A pattern size evaluation apparatus comprising an illumination optical system for projecting parallel light rays of a predetermined wavelength on a monitoring area formed on an object, the monitoring area being formed at a position different from a device pattern formed on the object, a light intensity detection optical system for detecting diffracted light from the monitoring area, and a device pattern size evaluation section for evaluating a size of the device pattern based on an intensity of diffracted light from the monitoring area.
摘要翻译：一种图案尺寸评估装置，包括用于在形成在物体上的监视区域上投射预定波长的平行光线的照明光学系统，所述监视区域形成在与形成在物体上的装置图案不同的位置，光强度检测用于检测来自监视区域的衍射光的光学系统，以及用于基于来自监视区域的衍射光的强度来评估装置图案的尺寸的装置图案尺寸评估部。

3. 发明授权

US07794923B2 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

4. 发明申请

US20070199579A1 Substrate treatment method, substrate treatment apparatus, and semiconductor device manufacturing method 审中-公开
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20070199579A1
公开(公告)日：2007-08-30
申请号：US11706992
申请日：2007-02-16
申请人： Kei Hayasaki , Eishi Shiobara , Shinichi Ito
发明人： Kei Hayasaki , Eishi Shiobara , Shinichi Ito
IPC分类号： C23G1/00 , B08B7/04 , B08B3/00 , B08B7/00
CPC分类号： H01L21/67051
摘要： According to an aspect of the invention, there is provided a substrate treatment method including performing a treatment including intermittently supplying a cleaning fluid to a central area of a treatment substrate while continuously rotating the substrate, and continuously supplying a cleaning fluid to a peripheral area of the substrate, thereby treating the substrate so that a liquid film on the substrate monotonously increases from the central area to the peripheral area along with the rotation of the substrate and so that the central area substantially dries.
摘要翻译：根据本发明的一个方面，提供了一种基板处理方法，包括进行处理，包括在连续旋转基板的同时向处理基板的中心区域间歇地供给清洗流体，并且将清洁流体连续供给到周边区域从而处理衬底，使得衬底上的液膜随着衬底的旋转而从中心区域逐渐增加到周边区域，并且使得中心区域基本上变干。

5. 发明授权

US07097960B2 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
公开(公告)号：US07097960B2
公开(公告)日：2006-08-29
申请号：US10824482
申请日：2004-04-15
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03F7/32 , G03F7/38 , G03F7/30 , G03F7/40
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

6. 发明申请

US20050058944A1 Alkaline solution and manufacturing method, and alkaline solution applied to patern forming method, resist film removing method, solution application method, substrate treatment method, solotion supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及制造方法，碱性溶液应用于成型方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，浸渍供给方法和半导体器件制造方法
公开(公告)号：US20050058944A1
公开(公告)日：2005-03-17
申请号：US10824482
申请日：2004-04-15
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： B01J19/00 , B05C5/02 , B05C11/10 , B05D1/26 , B05D3/00 , B05D3/10 , B05D7/00 , B05D7/24 , C02F1/68 , C09K3/00 , G03F7/30 , G03F7/32 , G03F7/42 , H01L21/027 , H01L21/311 , G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

7. 发明授权

US06441351B2 Heating device, method for evaluating heating device and pattern forming method 失效
标题翻译：加热装置，加热装置的评价方法和图案形成方法
公开(公告)号：US06441351B2
公开(公告)日：2002-08-27
申请号：US09734924
申请日：2000-12-13
申请人： Kei Hayasaki , Shinichi Ito , Kenji Kawano
发明人： Kei Hayasaki , Shinichi Ito , Kenji Kawano
IPC分类号： H05B102
CPC分类号： H01L21/67115 , G03F7/168 , G03F7/38
摘要： A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.
摘要翻译：用于在曝光前后施加抗蚀剂的晶片上进行热处理的加热装置包括用于加热放置在加热板上的晶片的加热板，用于在晶片上照射光以检测反射的强度的光强度检测装置来自晶片上的抗蚀剂的光，以及控制部分，用于根据检测到的反射光强度控制由加热板进行的加热，使得施加到多个晶片的加热量变得恒定。因此，可以将晶片的加热量控制为恒定，并且可以减小抗蚀剂图案的尺寸变化。

8. 发明申请

US20110008545A1 FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：薄膜成型方法，薄膜成型装置，图案形成方法及半导体装置的制造方法
公开(公告)号：US20110008545A1
公开(公告)日：2011-01-13
申请号：US12885934
申请日：2010-09-20
申请人： Shinichi ITO , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi ITO , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D1/02
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将其供给到基板上形成液膜，其中喷嘴的排出口与基板的距离h设定为2mm以上且小于5×10 -5qγ（mm））相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10-5（m·sec / N）。

9. 发明授权

US07683291B2 Substrate processing method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的基板加工方法及其制造方法
公开(公告)号：US07683291B2
公开(公告)日：2010-03-23
申请号：US11411139
申请日：2006-04-26
申请人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
发明人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
IPC分类号： A21B1/00 , C23C16/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D3/0084 , H01L21/67109
摘要： According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.
摘要翻译：根据本发明的一个方面，提供了一种单一的基板处理方法，其通过使用具有打开/关闭机构的加热装置连续加热待加工的含有溶剂的薄膜的基板处理方法，该加热装置包括供给含有在待处理的第一基板的处理和待处理的第二基板的处理之间的打开/关闭机构的闭合状态下，加热到加热装置的第一基板的膜中所含的溶剂。

10. 发明申请

US20080090001A1 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US20080090001A1
公开(公告)日：2008-04-17
申请号：US11987653
申请日：2007-12-03
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： C23C14/54 , B05C11/00
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将所述溶液供给到所述基板上以形成液膜，其中所述喷嘴的排出口与所述基板之间的距离h被设定为不小于2mm并且在小于5×10 -5的范围内，相对于溶液的表面张力γ（N / m）给出的SUP> qgamma（mm），通过排出口连续排出的溶液的排出速度q（m / sec）和5×10 -6 5（m.sec / N）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式