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1. 发明授权

US07040954B1 Methods of and apparatus for controlling polishing surface characteristics for chemical mechanical polishing 失效
标题翻译：用于控制化学机械抛光抛光表面特性的方法和设备
公开(公告)号：US07040954B1
公开(公告)日：2006-05-09
申请号：US10952608
申请日：2004-09-28
申请人： Simon McClatchie , Peter Norton , Xuyen Pham , Ren Zhou
发明人： Simon McClatchie , Peter Norton , Xuyen Pham , Ren Zhou
IPC分类号： B24B49/18 , B24B53/00
CPC分类号： B24B37/005 , B24B49/18
摘要： Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.
摘要翻译：设备和方法控制CMP以均匀抛光一系列晶片。平均电动机电流I（avg），以及在晶圆上的CMP期间电动机执行的相关的平均功率W（avg）可靠地指示抛光垫的抛光表面的粗糙度抛光特性的质量。调节器控制器通过调节相对于由CMP引起的抛光表面的质量的变化率来控制抛光表面的质量恢复的速率。在许多CMP处理的晶片上测量和平均电动机电流。该方法根据平均工作是否在基线范围内定义了平均工作值和控制条件的基准范围。当抛光表面相对于被抛光的每个晶片以恒定速度移动时，基于平均电动机电流的控制信号表示抛光特性的质量。

2. 发明申请

US20060014478A1 Apparatus and method for distributing a polishing fluid 失效
公开(公告)号：US20060014478A1
公开(公告)日：2006-01-19
申请号：US10892428
申请日：2004-07-15
申请人： Simon McClatchie , Sabir Majumder , Ren Zhou , Xuyen Pham , Tuan Nguyen
发明人： Simon McClatchie , Sabir Majumder , Ren Zhou , Xuyen Pham , Tuan Nguyen
IPC分类号： B24B1/00
CPC分类号： B24B37/04 , B24B57/02
摘要： An apparatus and method for evenly distributing a polishing fluid onto a polishing pad during a chemical mechanical planarization process, wherein the polishing fluid is dispersed by way of a spray being emitted from a spray nozzle. The pattern of polishing fluid applied to the polishing pad can be modified by adjustment of geometric parameters of the spray nozzle. The apparatus is configured with actuating mechanisms for translating and rotating the spray nozzle relative to the polishing pad in order to adjust a pattern of distribution of the polishing fluid. The method of dispersing polishing fluid onto the polishing pad produces an even distribution of polishing fluid across a width of the polishing pad.

3. 发明授权

US07040970B2 Apparatus and method for distributing a polishing fluid 失效
标题翻译：用于分配抛光液的装置和方法
公开(公告)号：US07040970B2
公开(公告)日：2006-05-09
申请号：US10892428
申请日：2004-07-15
申请人： Simon McClatchie , Sabir Majumder , Ren Zhou , Xuyen Pham , Tuan A. Nguyen
发明人： Simon McClatchie , Sabir Majumder , Ren Zhou , Xuyen Pham , Tuan A. Nguyen
IPC分类号： B24B1/00
CPC分类号： B24B37/04 , B24B57/02
摘要： An apparatus and method for evenly distributing a polishing fluid onto a polishing pad during a chemical mechanical planarization process, wherein the polishing fluid is dispersed by way of a spray being emitted from a spray nozzle. The pattern of polishing fluid applied to the polishing pad can be modified by adjustment of geometric parameters of the spray nozzle. The apparatus is configured with actuating mechanisms for translating and rotating the spray nozzle relative to the polishing pad in order to adjust a pattern of distribution of the polishing fluid. The method of dispersing polishing fluid onto the polishing pad produces an even distribution of polishing fluid across a width of the polishing pad.
摘要翻译：一种用于在化学机械平面化工艺期间将抛光流体均匀地分布到抛光垫上的装置和方法，其中抛光液通过从喷嘴喷射的喷雾而分散。可以通过调整喷嘴的几何参数来修改施加到抛光垫的抛光液的图案。该装置配置有用于相对于抛光垫平移和旋转喷嘴的致动机构，以便调节抛光流体的分布模式。将抛光液分散在抛光垫上的方法产生抛光液在抛光垫宽度上的均匀分布。

4. 发明授权

US08403727B1 Pre-planarization system and method 有权
标题翻译：预平面化系统和方法
公开(公告)号：US08403727B1
公开(公告)日：2013-03-26
申请号：US10816417
申请日：2004-03-31
申请人： Fred C. Redeker , John M. Boyd , Yezdi Dordi , Sabir A. Majumder , Simon McClatchie
发明人： Fred C. Redeker , John M. Boyd , Yezdi Dordi , Sabir A. Majumder , Simon McClatchie
IPC分类号： B24B1/00 , B24B7/19 , B24B7/30
CPC分类号： H01L21/32115 , B24B37/042 , B24B37/107 , B24B37/11 , B24D7/06 , H01L21/68785
摘要： A method for producing a normalized surface on a substrate for a chemical mechanical planarization process is provided. The method initiates with grinding a surface of the substrate with a first surface associated with a first planarization length. The method includes planarizing the surface of the substrate with a second surface associated with a second planarization length. Here, the second planarization length being less than the first planarization length. A system for processing a semiconductor substrate is also provided.
摘要翻译：提供了一种用于在化学机械平面化处理用基板上制造标准化表面的方法。该方法通过用与第一平坦化长度相关联的第一表面研磨衬底的表面来启动。该方法包括用与第二平坦化长度相关联的第二表面平坦化衬底的表面。这里，第二平坦化长度小于第一平坦化长度。还提供了一种用于处理半导体衬底的系统。

5. 发明授权

US06242366B1 Methods and apparatus for treating a semiconductor substrate 有权
标题翻译：用于处理半导体衬底的方法和设备
公开(公告)号：US06242366B1
公开(公告)日：2001-06-05
申请号：US09251157
申请日：1999-02-17
申请人： Knut Beekman , Adrian Kiermasz , Simon McClatchie , Mark Philip Taylor , Peter Leslie Timms
发明人： Knut Beekman , Adrian Kiermasz , Simon McClatchie , Mark Philip Taylor , Peter Leslie Timms
IPC分类号： H01L2126
CPC分类号： H01L21/76819 , H01L21/02126 , H01L21/02216 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/3121
摘要： A liquid short-chain polymer of the general formula RaSi(OH)b or (R)aSiHb(OH)c is deposited on a substrate, where a+b=4 or a+b+c=4, respectively, a, b and c are integers, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis. The short-chain polymer is then subjected to further polymerization to form an amorphous structure of the general formula (RxSiOy)n, where x and y are integers, x+y=4, x≠0, n equals 1 to ∞, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis.
摘要翻译： a + b = 4或a + b + c = 4沉积在基底上的通式为RaSi（OH）b或（R）aSiHb（OH）c的液态短链聚合物a，b c为整数，R为含碳基团，硅 - 碳键为傅立叶转移红外分析。然后将短链聚合物进一步聚合以形成通式（RxSiO y）n的无定形结构，其中x和y是整数，x + y = 4，x <0，n等于1到infin，R 是含碳基团，通过傅立叶转移红外分析表明硅与碳键。

6. 发明授权

US07129167B1 Methods and systems for a stress-free cleaning a surface of a substrate 有权
标题翻译：用于无应力清洁基材表面的方法和系统
公开(公告)号：US07129167B1
公开(公告)日：2006-10-31
申请号：US10879598
申请日：2004-06-28
申请人： Andrew D. Bailey, III , Shrikant P. Lohokare , Yunsang Kim , Simon McClatchie
发明人： Andrew D. Bailey, III , Shrikant P. Lohokare , Yunsang Kim , Simon McClatchie
IPC分类号： H01L21/44
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/32115 , H01L21/32136 , H01L21/67046 , H01L21/67051
摘要： A method of cleaning a substrate includes receiving a substrate and applying a stress-free cleaning process to the top surface of the substrate. The substrate includes a top surface that is substantially free of device dependent planarity nonuniformities and device independent planarity nonuniformities. The top surface also includes a first material and a device structure formed in the first material, the device structure being formed from a second material. The device structure has a device surface exposed. The device surface has a first surface roughness. A system for stress-free cleaning a substrate is also described.
摘要翻译：清洁基板的方法包括接收基板并向基板的顶表面施加无应力清洁处理。衬底包括基本上没有与器件相关的平面不均匀性和器件独立平面度不均匀性的顶表面。顶表面还包括形成在第一材料中的第一材料和器件结构，该器件结构由第二材料形成。器件结构具有暴露的器件表面。器件表面具有第一表面粗糙度。还描述了一种用于无应力清洁基底的系统。

7. 发明授权

US06988934B1 Method and apparatus of a variable height and controlled fluid flow platen in a chemical mechanical polishing system 失效
标题翻译：化学机械抛光系统中可变高度和受控流体流动压板的方法和装置
公开(公告)号：US06988934B1
公开(公告)日：2006-01-24
申请号：US10674319
申请日：2003-09-29
申请人： Gregory C. Lee , Simon McClatchie , John M. Boyd
发明人： Gregory C. Lee , Simon McClatchie , John M. Boyd
IPC分类号： B24B1/00
CPC分类号： B24B37/32 , B24B21/04
摘要： An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.
摘要翻译：提供了一种用于化学机械平面化（CMP）系统的设备。该装置包括能够在抛光垫下方引入流体的压板和构造成围绕压板的压板支撑盖。压板设置在第一水平面上，并且压板支撑盖设置在第二水平面上，第一水平相对于第二水平低。压板和压板支撑盖都被配置为设置在抛光垫的下方，使得抛光垫比第一水平更靠近第二水平。压板支撑盖具有在压板周围基本相等的第二水平的宽度。还提供了一种用于控制抛光垫下方的压力的装置和方法。

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