专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06110809A Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer 失效
标题翻译：制造具有III族金属氮化物外延层的外延晶片的方法
公开(公告)号：US06110809A
公开(公告)日：2000-08-29
申请号：US102675
申请日：1998-06-23
申请人： Simon M. Sze , Shih-Hsiung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Wei-Chi Lai
发明人： Simon M. Sze , Shih-Hsiung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Wei-Chi Lai
IPC分类号： C30B25/02 , H01L21/205 , H01L21/20
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/0262
摘要： A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.
摘要翻译：一种用于制造III族金属氮化物外延晶片的新方法包括提供第一含氮气体源，提供第二III族金属三氯化物气体源，并使所述第一气体与加热区域中的第二气体反应，由此在基板上形成III族金属氮化物外延层。所形成的外延晶片可以用作激光二极管的基板。

2. 发明授权

US06448584B1 Light emitting diode with high luminance and method for making the same 失效
标题翻译：具有高亮度的发光二极管及其制造方法
公开(公告)号：US06448584B1
公开(公告)日：2002-09-10
申请号：US09482602
申请日：2000-01-14
申请人： Shih-Hsiung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Simon M. Sze
发明人： Shih-Hsiung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Simon M. Sze
IPC分类号： H01L2912
CPC分类号： H01L33/02 , H01L33/14 , H01L33/30
摘要： The present invention relates to a light emitting diode with high luminance and method for making the same, and more particularly to a light emitting diode having a transparent window layer which is formed by a semiconductor film of nitrogen-containing compounds. The present invention is mainly directed to growing a window layer of a light emitting diode with a nitrogen-containing compound on the double heterostructure of InGaAlP. Since the energy gap of the nitrogen-containing compound is greater than that of the light emitted from the active layer and is smaller than that of GaP, it is easily to be doped and to form metallic ohmic electrode. Therefore, it is suitable to form a window layer, thereby increasing the light emitting efficiency of a light emitting diode. In addition, the nitrogen-containing compounds can be formed by the current MBE or OMVPE techniques. Therefore, the light emitting diode can be mass-produced and does have industrial applicability.
摘要翻译：本发明涉及一种具有高亮度的发光二极管及其制造方法，更具体地说，涉及具有由含氮化合物的半导体膜形成的透明窗口层的发光二极管。本发明主要涉及在InGaAlP的双异质结构上生长具有含氮化合物的发光二极管的窗口层。由于含氮化合物的能隙大于从有源层发射的光的能隙，并且小于GaP的能隙，因此容易被掺杂并形成金属欧姆电极。因此，适合形成窗口层，由此提高发光二极管的发光效率。此外，含氮化合物可以通过目前的MBE或OMVPE技术形成。因此，发光二极管可以批量生产并且具有工业适用性。

3. 发明授权

US06472687B1 Light emitting diode with high luminance and method therefor 失效
标题翻译：具有高亮度的发光二极管及其方法
公开(公告)号：US06472687B1
公开(公告)日：2002-10-29
申请号：US09391370
申请日：1999-09-08
申请人： Yu-Shan Wu , Jian-Shihn Tsang , Shih-Hsiung Chan , Jan-Dar Guo
发明人： Yu-Shan Wu , Jian-Shihn Tsang , Shih-Hsiung Chan , Jan-Dar Guo
IPC分类号： H01L2715
CPC分类号： H01L33/14 , H01L33/145 , H01L33/30
摘要： The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.
摘要翻译：本发明涉及具有高亮度的发光二极管及其方法，特别涉及具有InGaAlP的选择性高掺杂低电阻层的发光二极管。选择性高掺杂的低电阻层可以通过电流外延技术生长。因此，本发明的发光二极管可以批量生产，因此具有工业实用性。

4. 发明授权

US06174367B1 Epitaxial system 有权
标题翻译：外延系统
公开(公告)号：US06174367B1
公开(公告)日：2001-01-16
申请号：US09246327
申请日：1999-02-09
申请人： Chun-Yen Chang , Shih-Hciung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Wei-Chi Lai
发明人： Chun-Yen Chang , Shih-Hciung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Wei-Chi Lai
IPC分类号： C23C1634
CPC分类号： C30B25/105 , C30B29/406 , Y10T117/10
摘要： An epitaxial system is provided for performing an epitaxial growth of IIIA-VA compound on the wafer substrate. The epitaxial system includes a first reaction region for providing a plasma of a first reactant, a second reaction region for epitaxially reacting the plasma of the first reactant with a second reactant on a wafer, and a guiding medium disposed between the first reaction region and the second reaction region for passing therethrough the second reactant and the first reactant plasma to the second reaction region.
摘要翻译：提供外延系统用于在晶片衬底上进行IIIA-VA化合物的外延生长。外延系统包括用于提供第一反应物的等离子体的第一反应区域，用于使第一反应物的等离子体与晶片上的第二反应物外延反应的第二反应区域和布置在第一反应区域和第二反应区域之间的引导介质第二反应区域，用于使第二反应物和第一反应物等离子体通过第二反应区域。

5. 发明授权

US08872229B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08872229B2
公开(公告)日：2014-10-28
申请号：US13528846
申请日：2012-06-21
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/45
摘要： A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.
摘要翻译：薄膜晶体管包括衬底和形成在衬底上的有源层。有源层包括沟道区，源极区和漏极区。在源极区域和漏极区域分别形成源电极和漏电极。在栅电极和沟道区之间形成栅极绝缘层。薄膜晶体管还包括形成在漏极和漏极区之间以及在源极和源极区之间的氮化物导电层。氮化物导电层的载流子浓度高于有源层的载流子浓度，从而减小漏电极和漏极区之间以及源电极和源极区之间的接触电阻。

6. 发明授权

US08431956B2 Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure 失效
标题翻译：发光芯片具有碳纳米管结构中具有氮化物半导体的缓冲层
公开(公告)号：US08431956B2
公开(公告)日：2013-04-30
申请号：US13091141
申请日：2011-04-21
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L29/26
CPC分类号： H01L33/0075 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02403 , H01L21/0242 , H01L21/02444 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/20 , Y10S977/742
摘要： A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.
摘要翻译：发光芯片包括基板，缓冲层，盖层和发光结构。缓冲层形成在衬底上，并且包括基本上平行于衬底的碳纳米管结构。碳纳米管结构由氮化物半导体构成。盖层从缓冲层生长。发光结构形成在盖层上。发光结构依次包括与盖层连接的第一包层，发光层和第二包层。

7. 发明授权

US08445920B1 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US08445920B1
公开(公告)日：2013-05-21
申请号：US13396468
申请日：2012-02-14
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L33/44 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： A light emitting diode includes a substrate, two electrodes mounted on the substrate, a light emitting diode chip and an encapsulate sealing the light emitting diode chip. The encapsulant is doped with fluorescence particles and light diffusion particles. An average diameter of the diffusion particles is less than that of the fluorescence particles. A concentration of the diffusion particles in a portion of the encapsulant adjacent to a light output surface thereof is larger than that of the diffusion particles in a portion thereof adjacent to the chip. A concentration of the fluorescence particles in the portion of the encapsulant adjacent to the chip is larger than that of the fluorescence particles in the portion of the encapsulant adjacent to the light output surface.
摘要翻译：发光二极管包括基板，安装在基板上的两个电极，发光二极管芯片和密封发光二极管芯片的封装。该密封剂掺有荧光颗粒和光扩散颗粒。扩散粒子的平均粒径小于荧光粒子的直径。在与光输出表面相邻的密封剂的一部分中的扩散粒子的浓度大于在与芯片相邻的部分中的扩散粒子的浓度。与芯片相邻的密封剂部分中的荧光颗粒的浓度大于与光输出表面相邻的密封剂部分中的荧光颗粒的浓度。

8. 发明申请

US20120012872A1 LED PACKAGE STRUCTURE 失效
标题翻译： LED封装结构
公开(公告)号：US20120012872A1
公开(公告)日：2012-01-19
申请号：US12975232
申请日：2010-12-21
申请人： CHIA-HUI SHEN , Tzu-Chien Hung , Jian-Shihn Tsang
发明人： CHIA-HUI SHEN , Tzu-Chien Hung , Jian-Shihn Tsang
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/46 , H01L33/486 , H01L33/504 , H01L2224/16
摘要： An LED package structure includes a transparent substrate having a supporting face and a light-emergent face opposite to the supporting face, a housing disposed on the supporting face, two electrodes disposed on the housing, an LED chip disposed on the supporting face and electrically connected to the two electrodes, a reflecting layer covering the LED chip to reflect light emitted by the LED chip toward the transparent substrate, and a phosphor layer formed on the light-emergent face of the substrate. The phosphor layer includes a plurality of layers each having a specific light wavelength conversion range to generate a light with a predetermined color.
摘要翻译： LED封装结构包括具有支撑面和与支撑面相对的出光面的透明基板，设置在支撑面上的壳体，设置在壳体上的两个电极，设置在支撑面上并电连接的LED芯片向两个电极施加覆盖LED芯片以将由LED芯片发射的光反射到透明基板的反射层，以及形成在基板的发光面上的荧光体层。荧光体层包括多个具有特定光波长转换范围的层，以产生具有预定颜色的光。

9. 发明授权

US06432847B1 Method of activating P-type compound semiconductor by using lasers for reducing the resistivity thereof 失效
标题翻译：通过使用激光降低其电阻率来激活P型化合物半导体的方法
公开(公告)号：US06432847B1
公开(公告)日：2002-08-13
申请号：US09587211
申请日：2000-06-01
申请人： Jian-Shihn Tsang , Wen-Chung Tsai , Tsung-Yu Chen , Chia-Hung Hsu , Wei-Chih Lai
发明人： Jian-Shihn Tsang , Wen-Chung Tsai , Tsung-Yu Chen , Chia-Hung Hsu , Wei-Chih Lai
IPC分类号： H01L2126
CPC分类号： H01L21/3245 , H01L21/268
摘要： A novel method of using lasers for generating driving energy for activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. The present invention can be carried out in the ambience of atmosphere rather than in the ambience of nitrogen gas. In addition, adjusting the power and focusing distance of a laser source, and the power density can change the time required by the activating process.
摘要翻译：一种使用激光器产生用于激活P型化合物半导体膜的驱动能并降低其电阻率的新颖方法。 P型化合物半导体膜由掺杂有P型杂质的III-V族氮化物或II-VI族化合物制成。本发明可以在大气环境中进行，而不是在氮气氛下进行。此外，调整激光源的功率和聚焦距离，并且功率密度可以改变激活过程所需的时间。

10. 发明授权

US06380052B1 Method of activating P-type compound semiconductor for reducing the resistivity thereof 失效
标题翻译：激活P型化合物半导体以降低其电阻率的方法
公开(公告)号：US06380052B1
公开(公告)日：2002-04-30
申请号：US09583806
申请日：2000-05-30
申请人： Jian-Shihn Tsang , Wen-Chung Tsai , Wei-Chih Lai , Tsung-Yu Chen
发明人： Jian-Shihn Tsang , Wen-Chung Tsai , Wei-Chih Lai , Tsung-Yu Chen
IPC分类号： H01L2120
CPC分类号： H01L21/3245 , H01L21/477
摘要： A novel method of using rapid variation of temperature for generating driving energy to activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. In addition, the time duration when the ambient temperature is greater than a certain temperature during the annealing process is limited to be less than one minute. Therefore, the optoelectronic performance of the P-type compound semiconductor films will not degrade because the duration of annealing process is decreased.
摘要翻译：使用快速变化的温度来产生驱动能量以激活P型化合物半导体膜并降低其电阻率的新方法。 P型化合物半导体膜由掺杂有P型杂质的III-V族氮化物或II-VI族化合物制成。此外，在退火过程中环境温度大于一定温度的持续时间被限制为小于1分钟。因此，由于退火工艺的持续时间降低，P型化合物半导体膜的光电性能不会降低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式