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    • 3. 发明申请
    • SEMICONDUCTOR DEVICE AND TESTING METHOD THEREOF
    • 半导体器件及其测试方法
    • US20130107646A1
    • 2013-05-02
    • US13333715
    • 2011-12-21
    • Bo-Yeun KIMJi-Eun JANG
    • Bo-Yeun KIMJi-Eun JANG
    • G11C7/00
    • G11C29/785G11C29/802G11C2029/4402
    • A semiconductor device comprises a plurality of cell blocks activated in response to a plurality of selection signals, respectively, a pre-selection signal generator configured to generate a plurality of pre-selection signals corresponding to the cell blocks, respectively, and activate at least two of the pre-selection signals by decoding addresses in a multi-test mode, a selection signal controller configured to selectively activate the plurality of selection signals in response to the plurality pre-selection signals and control active periods of the activated selection signals so as not to overlap, and a decision circuit configured to decide whether or not the cell blocks activated in response to the activated selection signals are repaired in response to stored repair information and the plurality of selection signals.
    • 半导体器件分别包括响应于多个选择信号被激活的多个单元块,预选择信号发生器被配置为分别产生与单元块相对应的多个预选信号,并激活至少两个 通过在多测试模式中解码地址来选择预选信号,选择信号控制器被配置为响应于多个预选信号选择性地激活多个选择信号,并且控制所激活的选择信号的有效期,以便不 以及判定电路,其被配置为响应于所存储的修复信息和所述多个选择信号来确定响应于所激活的选择信号而被激活的单元块是否被修复。
    • 4. 发明申请
    • DATA OUTPUT CONTROL CIRCUIT
    • 数据输出控制电路
    • US20090116313A1
    • 2009-05-07
    • US11967595
    • 2007-12-31
    • Ji-Eun JANG
    • Ji-Eun JANG
    • G11C7/00
    • G11C7/1051G11C7/1066
    • A data output control circuit includes a data output control circuit configured to compensate a delay amount of a system clock on a clock path when a delay locked loop (DLL) circuit is enabled in such a state that the semiconductor memory device exits a reset state in response to an active signal, and to determine an output timing of data corresponding to a read command by counting the system clock and a DLL clock outputted from the DLL circuit 0 when the DLL circuit 0 is disabled, without compensating the delay amount.
    • 数据输出控制电路包括:数据输出控制电路,被配置为当在半导体存储器件退出复位状态的状态下使能延迟锁定环(DLL)电路时,补偿时钟路径上的系统时钟的延迟量 响应于活动信号,并且在DLL电路0被禁用时,通过对系统时钟和从DLL电路0输出的DLL时钟进行计数来确定与读命令相对应的数据的输出定时,而不补偿延迟量。
    • 6. 发明申请
    • ON DIE TERMINATION DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
    • 打印终端装置和包括其的半导体存储装置
    • US20090115449A1
    • 2009-05-07
    • US12181628
    • 2008-07-29
    • Ki-Ho KIMJi-Eun JANG
    • Ki-Ho KIMJi-Eun JANG
    • H03K19/003
    • G11C5/063G11C7/1051G11C7/1057G11C2207/2254
    • On die termination (ODT) device that can reduce the number of lines for transferring calibration codes to reduce the size of a chip including the ODT device. The ODT device includes a calibration circuit configured to generate calibration codes for determining a termination resistance, a counting circuit configured to generate counting codes increasing with time. A transferring circuit of the device is configured sequentially to transfer the calibration codes in response to the counting codes. A receiving circuit is configured sequentially to receive the calibration codes from the transferring circuit in response to the counting codes. A termination resistance circuit of the device is configured to perform impedance matching using a resistance determined according to the calibration codes.
    • 在终端(ODT)设备上,可以减少用于传送校准码的行数,以减少包括ODT设备在内的芯片的尺寸。 ODT装置包括:校准电路,被配置为产生用于确定终止电阻的校准码;计数电路,被配置为产生随时间增加的计数码。 依次配置设备的传送电路以响应于计数代码传送校准代码。 接收电路被顺序配置以响应于计数代码从传送电路接收校准码。 该器件的终端电阻电路被配置为使用根据校准码确定的电阻来执行阻抗匹配。