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    • 6. 发明授权
    • Methods of forming a plurality of capacitors
    • 形成多个电容器的方法
    • US07557013B2
    • 2009-07-07
    • US11402018
    • 2006-04-10
    • Vishwanath BhatNiraj B. RanaShyam Surthi
    • Vishwanath BhatNiraj B. RanaShyam Surthi
    • H01L21/20H01L21/8242H01L21/76
    • H01L28/91H01L27/10852
    • A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Conductive material received over the trench sidewall portion is covered with a silicon nitride-comprising layer which less than fills remaining trench volume. The insulative material within the array area and the silicon nitride-comprising layer are etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.
    • 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电材料形成在开口内并抵靠沟槽的侧壁部分,以小于完全填充沟槽。 接收在沟槽侧壁部分上的导电材料覆盖有少于填充剩余沟槽体积的含氮化硅的层。 阵列区域内的绝缘材料和含氮化硅的层用液体蚀刻溶液进行蚀刻,该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分,并露出沟槽内的导电材料。 阵列区域内的导电材料被并入多个电容器中。
    • 7. 发明申请
    • Semiconductor processing
    • 半导体处理
    • US20090042404A1
    • 2009-02-12
    • US11891575
    • 2007-08-10
    • Shyam Surthi
    • Shyam Surthi
    • H01L21/31C23C16/00
    • C23C16/45546C23C16/45578C23C16/46H01L21/02164H01L21/02211H01L21/0228H01L21/3141H01L21/31608
    • Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequentially introduced into a reaction chamber having an associated process temperature. The method includes removing residual first reactant from the chamber after introduction of the first reactant, removing residual second reactant from the chamber after introduction of the second reactant, and establishing a temperature differential substantially between an edge of the substrate and a center of the substrate via a purge process.
    • 本公开的实施例包括半导体处理方法和系统。 一种方法包括在半导体衬底上形成材料层,方法是将衬底的沉积表面暴露于至少第一和第二反应物,该第一和第二反应物依次导入具有相关工艺温度的反应室中。 该方法包括在引入第一反应物之后从室中除去残留的第一反应物,在引入第二反应物之后从室中除去残留的第二反应物,并且基本上在衬底的边缘和衬底的中心之间建立温差 清洗过程。
    • 8. 发明申请
    • Methods of forming a plurality of capacitors
    • 形成多个电容器的方法
    • US20070238259A1
    • 2007-10-11
    • US11402018
    • 2006-04-10
    • Vishwanath BhatNiraj RanaShyam Surthi
    • Vishwanath BhatNiraj RanaShyam Surthi
    • H01L21/20
    • H01L28/91H01L27/10852
    • A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Conductive material received over the trench sidewall portion is covered with a silicon nitride-comprising layer which less than fills remaining trench volume. The insulative material within the array area and the silicon nitride-comprising layer are etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.
    • 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电材料形成在开口内并抵靠沟槽的侧壁部分,以小于完全填充沟槽。 接收在沟槽侧壁部分上的导电材料覆盖有少于填充剩余沟槽体积的含氮化硅的层。 阵列区域内的绝缘材料和含氮化硅的层用液体蚀刻溶液进行蚀刻,该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分,并露出沟槽内的导电材料。 阵列区域内的导电材料被并入多个电容器中。