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    • 1. 发明授权
    • Liquid crystal display device, electronic device having the same, and manufacturing method of the same
    • 液晶显示装置,具有该液晶显示装置的电子装置及其制造方法
    • US08305509B2
    • 2012-11-06
    • US12908243
    • 2010-10-20
    • Shunpei YamazakiJun KoyamaYasuyuki AraiYasuko Watanabe
    • Shunpei YamazakiJun KoyamaYasuyuki AraiYasuko Watanabe
    • G02F1/136G02F1/1345
    • G02F1/1345G02F2202/104H01L2224/45144H01L2224/48091H01L2224/73204H01L2224/73265H01L2924/00014H01L2924/00
    • A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.
    • 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中,第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管, 第二基板,介于第一基板和第二基板之间的液晶层,以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中,晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸,第一基板被附着到第二基板,使得第一基板被暴露, 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上,并且第三基板的短边长度为1〜6mm,短边长度为 第一区域为0.5至1mm。
    • 2. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07935958B2
    • 2011-05-03
    • US11547632
    • 2005-10-18
    • Hiroko AbeYuji IwakiMikio YukawaShunpei YamazakiYasuyuki AraiYasuko WatanabeYoshitaka Moriya
    • Hiroko AbeYuji IwakiMikio YukawaShunpei YamazakiYasuyuki AraiYasuko WatanabeYoshitaka Moriya
    • H01L29/08
    • G11C13/0014B82Y10/00G11C13/00G11C17/14G11C17/143G11C17/16H01L27/285H01L51/0051H01L51/0059
    • The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
    • 本发明提供一种半导体器件,其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。 利用该特征,提供了具有非易失性,可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。 根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。 多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分,并且多个存储元件中的每一个是其中堆叠第一导电层,有机化合物层和第二导电层的元件 为了。
    • 4. 发明授权
    • Plasma treatment apparatus and method for plasma treatment
    • 等离子体处理装置及等离子体处理方法
    • US07307029B2
    • 2007-12-11
    • US11410234
    • 2006-04-25
    • Shunpei YamazakiYasuyuki AraiYasuko Watanabe
    • Shunpei YamazakiYasuyuki AraiYasuko Watanabe
    • H01L21/26
    • H01L21/67115C23C16/45519C23C16/45521C23C16/4557C23C16/4583C23C16/46C23C16/5093C23C16/513C23C16/54H01J37/32761H01L21/67069H01L21/67109H01L21/67748H01L21/67784H01L21/6838
    • A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.
    • 提供了等离子体处理装置和等离子体处理方法,其可以准确地控制等离子体和被处理物体之间的距离(以下称为对象),并且促进宽度较薄的基板的输送 并长大。 本发明的等离子体处理装置设置有用于在大气压或大气压下将处理气体引入第一电极和第二电极之间的位置的气体供给装置; 等离子体产生装置,用于在引入处理气体的条件下,通过向第一电极或第二电极施加高频电压来产生等离子体; 以及用于通过将处理气体或输送气体吹送到物体而使物体浮起来来运送物体的运送装置。 蚀刻处理; 灰化治疗; 薄膜形成; 或者通过移动第一电极和第二电极之间的相对位置以及物体来执行使用第一电极和第二电极的部件的清洁处理。
    • 5. 发明授权
    • Display device and electronic device
    • 显示设备和电子设备
    • US07301171B2
    • 2007-11-27
    • US11280728
    • 2005-11-17
    • Mitsuaki OsameAya AnzaiJun KoyamaYasuko WatanabeShunpei Yamazaki
    • Mitsuaki OsameAya AnzaiJun KoyamaYasuko WatanabeShunpei Yamazaki
    • H01L29/04
    • H01L25/048H01L27/3267H01L27/3286H01L51/524H01L51/525H01L2924/0002H01L2924/00
    • The invention provides a display device and an electronic device, each of which has one of a structure in which a substrate provided with a light emitting element which performs bottom light emission and a substrate provided with a light emitting element which performs top light emission are attached, and a structure in which two substrates, each of which is provided with a light emitting element which performs bottom light emission are attached. By attaching two substrates, each of which is provided with a light emitting element, displays are provided on the front and back of the display device, thus a high added value can be realized. One of the two substrates, each of which is provided with a light emitting element also functions as a sealing substrate for another substrate, thus a compact, thin, and lightweight display device can be obtained.
    • 本发明提供了一种显示装置和电子装置,每个显示装置和电子装置具有以下结构之一:附接有设置有执行底部发光的发光元件的基板和设置有执行顶部发光的发光元件的基板 ,并且附接有两个基板,其中每个基板设置有执行底部发光的发光元件。 通过连接两个基板,每个基板设置有发光元件,在显示装置的正面和背面设置有显示器,因此可以实现高附加值。 两个基板中的每一个设置有发光元件也用作另一基板的密封基板,因此可以获得紧凑,薄且轻的显示装置。
    • 6. 发明申请
    • Liquid Crystal Display Device, Semiconductor device, Electronic Device, and Manufacturing Method of the Liquid Crystal Display Device
    • 液晶显示装置,半导体装置,电子装置及液晶显示装置的制造方法
    • US20070052907A1
    • 2007-03-08
    • US11538907
    • 2006-10-05
    • Shunpei YamazakiJun KoyamaYasuyuki AraiYasuko Watanabe
    • Shunpei YamazakiJun KoyamaYasuyuki AraiYasuko Watanabe
    • G02F1/1345
    • G02F1/1345G02F2202/104H01L2224/45144H01L2224/48091H01L2224/73204H01L2224/73265H01L2924/00014H01L2924/00
    • A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.
    • 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中,第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管, 第二基板,介于第一基板和第二基板之间的液晶层,以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中,晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸,第一基板被附着到第二基板,使得第一基板被暴露, 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上,并且第三基板的短边长度为1〜6mm,短边长度为 第一区域为0.5至1mm。
    • 10. 发明申请
    • Liquid crystal display device, electronic device having the same, and manufacturing method of the same
    • 液晶显示装置,具有该液晶显示装置的电子装置及其制造方法
    • US20050001968A1
    • 2005-01-06
    • US10839754
    • 2004-05-06
    • Shunpei YamazakiJun KoyamaYasuyuki AraiYasuko Watanabe
    • Shunpei YamazakiJun KoyamaYasuyuki AraiYasuko Watanabe
    • G02F1/133G02F1/1345G02F1/136G09G3/36H01S5/00
    • G02F1/1345G02F2202/104H01L2224/45144H01L2224/48091H01L2224/73204H01L2224/73265H01L2924/00014H01L2924/00
    • A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.
    • 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中,第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管, 第二基板,介于第一基板和第二基板之间的液晶层,以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中,晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸,第一基板被附着到第二基板,使得第一基板被暴露, 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上,并且第三基板的短边长度为1〜6mm,短边长度为 第一区域为0.5至1mm。