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1. 发明授权

US06977192B2 Method of manufacturing thin film semiconductor device 失效
标题翻译：制造薄膜半导体器件的方法
公开(公告)号：US06977192B2
公开(公告)日：2005-12-20
申请号：US10254142
申请日：2002-09-24
申请人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
发明人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In manufacturing a thin film semiconductor device, a gate electrode forming step, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystalline semiconductor film forming step, and an insulating film forming step are performed continuously without breaking vacuum.
摘要翻译：在制造薄膜半导体器件中，连续地连续地进行栅极形成步骤，栅极绝缘膜形成步骤，非晶半导体膜形成步骤，结晶半导体膜形成步骤和绝缘膜形成步骤。

2. 发明授权

US07763503B2 Thin film semiconductor device and method of manufacturing the same 失效
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US07763503B2
公开(公告)日：2010-07-27
申请号：US11275209
申请日：2005-12-19
申请人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
发明人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
IPC分类号： H01L21/84
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, and an insulating film forming step are continuously performed without taking out the substrate to the atmosphere.
摘要翻译：在半导体器件制造工艺中，连续地执行栅绝缘膜形成步骤，非晶半导体膜形成步骤和绝缘膜形成步骤，而不将基板取出到大气中。

3. 发明申请

US20060105514A1 THIN FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US20060105514A1
公开(公告)日：2006-05-18
申请号：US11275209
申请日：2005-12-19
申请人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
发明人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： Two kinds of a thin film semiconductor unit are disposed over a substrate. A first thin film semiconductor unit includes a polycrystalline semiconductor thin film, and a second thin film semiconductor unit includes an amorphous semiconductor thin film.
摘要翻译：在基板上设置两种薄膜半导体单元。第一薄膜半导体单元包括多晶半导体薄膜，第二薄膜半导体单元包括非晶半导体薄膜。

4. 发明授权

US06458635B2 Method of manufacturing a thin film semiconductor device 失效
标题翻译：制造薄膜半导体器件的方法
公开(公告)号：US06458635B2
公开(公告)日：2002-10-01
申请号：US09812359
申请日：2001-03-19
申请人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
发明人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
IPC分类号： H01L2100
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystallizing step and an etch stopper insulating film forming step are continuously performed without exposing the atmosphere.
摘要翻译：在半导体器件制造工艺中，连续地进行栅极绝缘膜形成步骤，非晶半导体膜形成步骤，结晶步骤和蚀刻停止绝缘膜形成步骤，而不暴露气氛。

5. 发明授权

US5079031A Apparatus and method for forming thin films 失效
标题翻译：用于形成薄膜的装置和方法
公开(公告)号：US5079031A
公开(公告)日：1992-01-07
申请号：US324669
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/517 , H01J37/32082 , H01J37/32568 , H01J2237/3321
摘要： An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.

6. 发明授权

US06204519B1 Thin film semiconductor device 失效
标题翻译：薄膜半导体器件
公开(公告)号：US06204519B1
公开(公告)日：2001-03-20
申请号：US08813541
申请日：1997-03-07
申请人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
发明人： Shunpei Yamazaki , Toshiji Hamatani , Takeshi Fukada
IPC分类号： H01L2904
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： A thin film semiconductor device comprising a substrate having an insulating surface, gate electrodes disposed on the insulating surface, gate insulating films disposed on upper portions of the gate electrodes, and thin film semiconductors disposed on the gate insulating films and including channel forming regions, source regions and drain regions. Two kinds of thin film semiconductor unit are disposed on the substrate. A first thin film semiconductor unit includes the thin film semiconductor of polycrystal, an insulating film covering an upper portion of the channel forming region, impurity semiconductor films doped with trivalent or pentavalent impurities and covering the source region and the drain region, and conductive films disposed on the impurity semiconductor films. A second thin film semiconductor unit includes the thin film semiconductor of amorphous, and other components similar to the first thin film semiconductor unit.
摘要翻译：一种薄膜半导体器件，包括具有绝缘表面的衬底，设置在绝缘表面上的栅极电极，设置在栅极电极的上部的栅极绝缘膜，以及设置在栅极绝缘膜上并且包括沟道形成区域的源极区域和排水区域。两种薄膜半导体单元设置在基板上。第一薄膜半导体单元包括多晶薄膜半导体，覆盖沟道形成区的上部的绝缘膜，掺杂有三价或五价杂质的杂质半导体膜，并覆盖源极区和漏极区，以及设置导电膜在杂质半导体膜上。第二薄膜半导体单元包括非晶体的薄膜半导体和类似于第一薄膜半导体单元的其它部件。

7. 发明授权

US09048203B2 Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor 有权
公开(公告)号：US09048203B2
公开(公告)日：2015-06-02
申请号：US13177647
申请日：2011-07-07
申请人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
发明人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
IPC分类号： H01L33/00 , H01L27/32 , H01L21/67 , H01L51/50 , H01L51/56 , H01L51/52
CPC分类号： H01L27/3211 , H01L21/67207 , H01L27/3209 , H01L27/3218 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L51/5036 , H01L51/504 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

8. 发明申请

US20120168763A1 Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120168763A1
公开(公告)日：2012-07-05
申请号：US13411842
申请日：2012-03-05
申请人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
IPC分类号： H01L33/08
CPC分类号： G02F1/13454 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78684
摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
摘要翻译：本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

9. 发明申请

US20110266548A1 LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND MANUFACTURING APPARATUS THEREFOR 有权
标题翻译：发光装置，其制造方法及其制造装置
公开(公告)号：US20110266548A1
公开(公告)日：2011-11-03
申请号：US13177647
申请日：2011-07-07
申请人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
发明人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
IPC分类号： H01L33/50
CPC分类号： H01L27/3211 , H01L21/67207 , H01L27/3209 , H01L27/3218 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L51/5036 , H01L51/504 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.
摘要翻译：提供了具有高清晰度，高开口率和高可靠性的发光器件。本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠，而不依赖于形成有机化合物层的方法或成膜精度。

10. 发明授权

US07864151B1 Portable electronic device 失效
标题翻译：便携式电子设备
公开(公告)号：US07864151B1
公开(公告)日：2011-01-04
申请号：US07825784
申请日：1992-01-21
申请人： Shunpei Yamazaki , Toshiji Hamatani
发明人： Shunpei Yamazaki , Toshiji Hamatani
IPC分类号： G09G3/36
CPC分类号： G09G3/3651 , G06F1/3203 , G09G3/3696 , G09G2330/021 , G09G2360/12 , Y10S345/901
摘要： A thin, readily portable book has a memory-type liquid crystal display in the display section of the thin portable book so as to obtain low power consumption along with compact size and reduced weight, a solar cell and a charging device in the energy section of the thin portable book, so that low power consumption is further promoted, a freely detachable cassette-type or card-type non-volatile semiconductor memory in the recording medium section of the thin portable book so as to provide further savings in power consumption.
摘要翻译：薄型便携式书籍在薄型便携式书本的显示部分中具有记忆型液晶显示器，以便获得低功耗以及紧凑的尺寸和减轻的重量，太阳能电池和充电装置在能量部分薄便携式书籍，从而进一步提高了低功耗，在薄型便携式书籍的记录介质部分中可自由拆卸的盒式或卡式非易失性半导体存储器，从而进一步节省功耗。

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