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1. 发明授权

US07569408B1 Semiconductor device and method for forming the same 失效
公开(公告)号：US07569408B1
公开(公告)日：2009-08-04
申请号：US08841644
申请日：1997-04-30
申请人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
发明人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
IPC分类号： H01L21/00
CPC分类号： H01L21/76897 , G02F1/13454 , G02F2001/136245 , H01L27/12 , H01L29/4908 , H01L29/66757 , H01L29/78651 , H01L29/78666 , H01L29/78675 , Y10S257/90
摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

2. 发明授权

US06822261B2 Semiconductor device and method for forming the same 失效
标题翻译：半导体装置及其形成方法
公开(公告)号：US06822261B2
公开(公告)日：2004-11-23
申请号：US09978720
申请日：2001-10-18
申请人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
发明人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
IPC分类号： H01L2904
CPC分类号： H01L21/76897 , G02F1/13454 , G02F2001/136245 , H01L27/12 , H01L29/4908 , H01L29/66757 , H01L29/78651 , H01L29/78666 , H01L29/78675 , Y10S257/90
摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.
摘要翻译：一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有氧化物金属。根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置的门。此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

3. 发明授权

US5109292A Liquid crystal device having resin layer formed between adjacent active elements 失效
标题翻译：具有相邻活性元素之间的树脂层的液晶装置
公开(公告)号：US5109292A
公开(公告)日：1992-04-28
申请号：US679135
申请日：1991-03-28
申请人： Shunpei Yamazaki , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Toshiharu Yamaguchi , Mitsunori Sakama , Takashi Inujima
发明人： Shunpei Yamazaki , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Toshiharu Yamaguchi , Mitsunori Sakama , Takashi Inujima
IPC分类号： G02F1/1333
CPC分类号： G02F1/133345
摘要： An improved liquid crystal device immune to contamination of the liquid crystal is shown. The liquid crystal is isolated from ion sources such as glass substrates, transparent electrodes or so on by means of a nitride layer positioned therebetween.

4. 发明授权

US5069531A Liquid crystal device having asymmetrical opposed contiguous surfaces being driven by a unipolar driving source 失效
标题翻译：具有由非对称驱动源驱动的不对称对流表面的液晶装置
公开(公告)号：US5069531A
公开(公告)日：1991-12-03
申请号：US385927
申请日：1989-07-27
申请人： Shunpei Yamazaki , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Toshiharu Yamaguchi , Mitsunori Sakama , Takashi Inujima
发明人： Shunpei Yamazaki , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Toshiharu Yamaguchi , Mitsunori Sakama , Takashi Inujima
IPC分类号： G02F1/1333
CPC分类号： G02F1/133345
摘要： A liquid crystal device including a unipolar driving source; a pair of substrates, at least one of which is transparent; a chiral smectic liquid crystal layer interposed between the substrates; and an electrode arrangement provided in order to apply an electric field normal to the liquid crystal layer, wherein the opposed inner surfaces of the substrates contiguous to the chiral smectic liquid crystal layer are formed of different materials having different surface energies such that upon application of the unipolar voltage to the chiral smectic liquid crystal, the chiral smectic liquid crystal molecules will be placed in a first state and upon removal of the unipolar voltage, the liquid crystal molecules will be returned to a second state.
摘要翻译：一种包括单极驱动源的液晶装置; 一对基板，其中至少一个是透明的; 介于基板之间的手性近晶液晶层; 以及设置用于施加与液晶层垂直的电场的电极装置，其中与手性近晶液晶层相邻的基板的相对的内表面由具有不同表面能的不同材料形成，使得在施加对手性近晶液晶的单极电压，手性近晶液晶分子将被置于第一状态，并且在去除单极电压时，液晶分子将返回到第二状态。

5. 发明授权

US06323528B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06323528B1
公开(公告)日：2001-11-27
申请号：US09124111
申请日：1998-07-29
申请人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
发明人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
IPC分类号： H01L2976
CPC分类号： H01L21/76897 , G02F1/13454 , G02F2001/136245 , H01L27/12 , H01L29/4908 , H01L29/66757 , H01L29/78651 , H01L29/78666 , H01L29/78675 , Y10S257/90
摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.
摘要翻译：一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有氧化物金属。根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置的门。此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

6. 发明授权

US5289300A Method of manufacturing electro-optical devices wherein the electrode is patterned on the modulation layer 失效
标题翻译：制造电光装置的方法，其中电极在调制层上图案化
公开(公告)号：US5289300A
公开(公告)日：1994-02-22
申请号：US829263
申请日：1992-02-03
申请人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani , Takeshi Nishi
发明人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani , Takeshi Nishi
IPC分类号： G02F1/1334 , G02F1/1343 , G02F1/1365 , G02F1/13
CPC分类号： G02F1/1334 , G02F1/13439 , G02F1/1365
摘要： A method of manufacturing electro-optical devices is described. The method comprises steps of forming a first electrode arrangement on a substrate, coating an electro-optical modulating layer comprising a liquid crystal on the substrate over the first electrode arrangement and forming a second electrode arrangement on the electro-optical modulating layer. The electro-optical modulating layer is prepared by dispersing a liquid crystal in a pre-polymer which can be cured by UV light or other suitable procedures.
摘要翻译：描述制造电光装置的方法。该方法包括以下步骤：在衬底上形成第一电极装置，在第一电极装置上在衬底上涂覆包括液晶的电光调制层，并在电光调制层上形成第二电极装置。通过将液晶分散在可以通过UV光或其它合适方法固化的预聚物中来制备电光调制层。

7. 发明授权

US5196954A Liquid crystal display 失效
标题翻译：液晶显示器
公开(公告)号：US5196954A
公开(公告)日：1993-03-23
申请号：US243218
申请日：1988-09-12
申请人： Shunpei Yamazaki , Takashi Inujima , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Mitsunori Sakama , Minoru Miyazaki , Kaoru Koyanagi , Toshiharu Yamaguchi
发明人： Shunpei Yamazaki , Takashi Inujima , Toshimitsu Konuma , Toshiji Hamatani , Akira Mase , Mitsunori Sakama , Minoru Miyazaki , Kaoru Koyanagi , Toshiharu Yamaguchi
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/141
CPC分类号： G02F1/141 , G02F1/13439 , G02F1/133371 , G02F2203/30
摘要： A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.
摘要翻译：通过向液晶施加中等水平的电压，使手性近晶型的液晶显示器具有灰度级。在显示器的每个图像元素内，存在液晶层的多个域，一些是透明的，而另一个是对图像元素的不透明的灰色调。

8. 发明授权

US4799776A Ferroelectric liquid crystal display device having a single polarizer 失效
标题翻译：具有单个偏振器的铁电液晶显示装置
公开(公告)号：US4799776A
公开(公告)日：1989-01-24
申请号：US34165
申请日：1987-03-02
申请人： Shunpei Yamazaki , Takashi Inujima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama , Toshiji Hamatani , Minoru Miyazaki , Kaoru Koyanagi , Toshiharu Yamaguchi
发明人： Shunpei Yamazaki , Takashi Inujima , Akira Mase , Toshimitsu Konuma , Mitsunori Sakama , Toshiji Hamatani , Minoru Miyazaki , Kaoru Koyanagi , Toshiharu Yamaguchi
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/141 , G02F1/13
CPC分类号： G02F1/133553 , G02F1/141 , G02F2203/02
摘要： The liquid crystal display according to this invention comprises a liquid crystal cell having a pair of substrates with faced insides which are provided with electrodes, ferroelectric liquid crystal with a chiral smectic C phase in between said substrates and a polarizing plate on the light incidence side. One of said electrodes is a relfective electrode. The display is utilized with microcomputers, word processors, television or so on, and wherein, due to a small number of parts, the absorption loss of light is small and a reflective plate is prevented from being oxided and therefore degraded in reflection index, since it is not exposed to air.
摘要翻译： PCT No.PCT / JP86 / 00329 Sec。 371日期1987年3月2日 102（e）1987年3月2日PCT申请1986年6月27日PCT公布。出版物WO87 / 00301 日本1987年1月15日。根据本发明的液晶显示器包括一个液晶单元，其具有一对具有面向内部的基板，其具有电极，在所述基板之间具有手性近晶C相的铁电液晶和极化板在光入射侧。所述电极之一是相对电极。该显示器与微型计算机，文字处理器，电视机等一起使用，其中，由于少量的部件，光的吸收损失小，防止反射板氧化，因此反射指数降低，因为它不会暴露在空气中。

9. 发明授权

US5474945A Method for forming semiconductor device comprising metal oxide 失效
标题翻译：包含金属氧化物的半导体器件的形成方法
公开(公告)号：US5474945A
公开(公告)日：1995-12-12
申请号：US147580
申请日：1993-11-05
申请人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
发明人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/60 , H01L27/12 , H01L29/49 , H01L29/786
CPC分类号： H01L21/76897 , H01L27/12 , H01L29/4908 , H01L29/66757 , H01L29/78651 , H01L29/78666 , H01L29/78675 , G02F1/13454 , G02F2001/136245 , Y10S257/90
摘要： An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.
摘要翻译：一种绝缘栅场效应半导体器件，包括其上设置有薄膜结构的绝缘栅场效应半导体器件的衬底，所述器件的特征在于其包括金属栅电极，并且至少其一侧涂覆有金属。根据本发明的绝缘栅场效应半导体器件的特征还在于，源极和漏极区域的提取触点的接触孔设置在位于侧面的阳极氧化膜的端面的大致相同的位置的门。此外，本发明提供一种使用较少掩模形成绝缘栅场效应半导体器件的方法。

10. 发明授权

US5474629A Method for manufacturing a liquid crystal device 失效
标题翻译：液晶装置的制造方法
公开(公告)号：US5474629A
公开(公告)日：1995-12-12
申请号：US803224
申请日：1991-12-06
申请人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
发明人： Shunpei Yamazaki , Akira Mase , Toshiji Hamatani
IPC分类号： G02F1/1334 , G02F1/1339 , G02F1/1341 , B32B31/00
CPC分类号： G02F1/1334 , B32B37/1207 , B32B2310/0806 , G02F1/13392 , G02F1/1341 , Y10T156/109 , Y10T156/1093
摘要： A method for manufacturing a liquid crystal device, particularly a dispersion-type liquid crystal electrooptical device, which comprises a pair of substrates having incorporated therebetween a light-control layer comprising a transparent solid and a liquid crystal material and spacers, said substrates having provided thereon electrode layers and at least one of the substrates being transparent, is disclosed. The method comprises:coating the electrode layer side of one of the substrates with a material which gives the light-control layer; and, laminating and fixing the pair of substrates to give a predetermined layered structure.The spacers are uniformly disposed between the substrates by dispersing spacers on one of the electrode layers or on the light-control layer or applying a mixture comprising spacers, a liquid crystal material and a material for providing a transparent solid on one of the electrode layers.The process is economical and enables large-sealed liquid crystal electrooptical devices which can provide uniform displays, at an extremely few steps comprising coating once the substrate with a material for the light-control layer.
摘要翻译：一种液晶装置的制造方法，特别是分散型液晶电光装置，其特征在于，包括一对基板，其中包括透明固体和液晶材料的光控制层和间隔物，所述基板设置在其上公开了电极层和至少一个衬底是透明的。该方法包括：用提供光控制层的材料涂覆其中一个基板的电极层侧; 并且层叠并固定该对基板以产生预定的层状结构。通过将间隔物分散在电极层之一或光控制层上，或者施加包含间隔物，液晶材料和用于在一个电极层上提供透明固体的材料的混合物，将间隔物均匀地设置在基板之间。该方法是经济的，并且能够提供均匀显示器的大密封液晶电光装置，其极小的步骤包括使用光控层的材料涂覆基板。

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