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    • 1. 发明授权
    • Method of and apparatus for inspecting reticle for defects
    • 用于检查掩模版的缺陷的方法和装置
    • US06084664A
    • 2000-07-04
    • US184003
    • 1998-11-02
    • Shunichi MatsumotoHiroaki Shishido
    • Shunichi MatsumotoHiroaki Shishido
    • G01N21/88G01N21/93G01N21/94G01N21/956G03F1/32G03F1/84H01L21/027H01L21/30H01L21/66G01N21/00
    • G01N21/94G01N21/956G01N21/95607G01N21/95623G03F1/84
    • A reticle inspecting apparatus for inspecting a reticle for defects has a transparent or translucent substrate, a circuit pattern formed on the front surface of the substrate, and a phase shifter formed of a light-transmissive film on the front surface of the substrate. In the apparatus, a detection optical system is disposed so as not to gather directly reflected light and directly transmitted light and so as to gather scattered light and diffracted light which has been scattered and diffracted, respectively, by the reticle. This detection optical system is capable of separating the gathered light by direction of illumination using detectors, and spatial filters disposed respectively on Fourier transform planes to intercept light diffracted by straight edges of the circuit pattern, so as to form images of gathered light on the detectors. A signal processing system having a signal processing unit calculates data concerning defects on the basis of the output signals of the detectors and displays the calculated data on a display.
    • 用于检查用于缺陷的掩模版的掩模版检查装置具有透明或半透明的基板,形成在基板的前表面上的电路图案,以及在基板的前表面上由透光膜形成的移相器。 在该装置中,检测光学系统被设置成不会直接聚集反射光并直接透射光,以分散散射光和被散射和衍射的衍射光。 该检测光学系统能够通过使用检测器的照明方向分离收集的光,并且分别设置在傅里叶变换平面上的空间滤波器,以截取由电路图案的直边衍射的光,以便在检测器上形成聚光的图像 。 具有信号处理单元的信号处理系统基于检测器的输出信号来计算关于缺陷的数据,并将计算出的数据显示在显示器上。
    • 2. 发明授权
    • Foreign particle inspection apparatus and method with front and back
illumination
    • 具有前后照明的外来颗粒检查装置及方法
    • US5539514A
    • 1996-07-23
    • US269379
    • 1994-06-30
    • Hiroaki ShishidoShunichi Matsumoto
    • Hiroaki ShishidoShunichi Matsumoto
    • G01N21/94G01N21/956G01N21/00
    • G01N21/956G01N21/94
    • A method of inspecting a phase shift reticle comprising a transparent or translucent substrate, a circuit pattern of an opaque film formed on the front surface of the substrate and a pattern of a transparent or translucent film formed on the front surface of the substrate comprises: obliquely projecting a front illuminating light beam on the front surface of the substrate by a front illuminating system; concentrating scattered light scattered by the surface of the substrate and the surfaces of the patterns, obliquely projecting a back illuminating light beam on the back surface of the substrate by a back illuminating system, concentrating transmitted-and-diffracted light transmitted and diffracted by the substrate and the patterns; intercepting the scattered light scattered by the patterns and the transmitted-and-diffracted light transmitted and diffracted by the patterns with spatial filters disposed on Fourier transform planes, focusing the scattered light and the transmitted-and-diffracted light transmitted by the spatial filters on detectors; and comparing detection signals provided by the detectors to see if there are any foreign particles on the phase shift reticle.
    • 检查包括透明或半透明基板的相移掩模版的方法,形成在基板的前表面上的不透明膜的电路图案和形成在基板的前表面上的透明或半透明膜的图案包括: 通过前照明系统将前照明光束投影在基板的前表面上; 集中由基板表面和图案表面散射的散射光,通过后照明系统将后照明光束倾斜地投射在基板的背面上,集中由基板透射和衍射的透射衍射光 和模式; 截取由图案散射的散射光和通过布置在傅立叶变换平面上的空间滤光片通过图案传输和衍射的透射衍射光,将散射光和由空间滤光器透射的透射衍射光聚焦在检测器 ; 并比较由检测器提供的检测信号,以查看相移掩模版上是否存在任何异物。
    • 3. 发明授权
    • Method of and apparatus for inspecting reticle for defects
    • 用于检查掩模版的缺陷的方法和装置
    • US06064477A
    • 2000-05-16
    • US644740
    • 1996-05-10
    • Shunichi MatsumotoHiroaki Shishido
    • Shunichi MatsumotoHiroaki Shishido
    • G01N21/88G01N21/93G01N21/94G01N21/956G03F1/32G03F1/84H01L21/027H01L21/30H01L21/66
    • G01N21/94G01N21/956G01N21/95607G01N21/95623G03F1/84
    • A reticle inspecting apparatus for inspecting a reticle for defects has a transparent of translucent substrate, a circuit pattern formed on the front surface of the substrate, and a phase shifter formed of a light-transmissive film on the front surface of the substrate. In the apparatus, a detection optical system is disposed so as not to gather directly reflected light and directly transmitted light and so as to gather scattered light and diffracted light which has been scattered and diffracted, respectively, by the reticle. This detection optical system enables separation of the gathered light by direction of illumination using detectors and spatial filters disposed respectively on Fourier transform planes to intercept light diffracted by straight edges of the circuit pattern, so as to form images of gathered light on the detectors. A signal processing system having a signal processing unit calculates defects on the basis of the output signals of the detectors and displays the calculated data on a display.
    • 用于检查掩模版用于缺陷的掩模版检查装置具有透光性的基板,形成在基板的前表面的电路图案,以及在基板的前表面上由透光膜形成的移相器。 在该装置中,检测光学系统被设置成不会直接聚集反射光并直接透射光,以分散散射光和被散射和衍射的衍射光。 该检测光学系统能够使用分别设置在傅立叶变换平面上的检测器和空间滤光器的照明方向来分离收集的光以截取由电路图案的直边衍射的光,从而在检测器上形成聚光的图像。 具有信号处理单元的信号处理系统基于检测器的输出信号计算缺陷,并将计算出的数据显示在显示器上。
    • 5. 发明授权
    • Photomask blank, photomask, and method for manufacturing photomask blank
    • 光掩模坯料,光掩模以及制造光掩模坯料的方法
    • US08304147B2
    • 2012-11-06
    • US12935517
    • 2009-03-31
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • G03F1/20
    • G03F1/22G03F1/46G03F1/54G03F1/80H01L21/0274
    • The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
    • 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料,其中:在透光基板上设置有遮光膜; 遮光膜具有层叠结构,其中背面防反射层,遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成,具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成,具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成,并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30%以下。
    • 6. 发明申请
    • PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK
    • PHOTOMASK BLANK,PHOTOMASK和制造光电隔离层的方法
    • US20110104592A1
    • 2011-05-05
    • US12935517
    • 2009-03-31
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • Hiroyuki IwashitaHiroaki ShishidoAtsushi KominatoMasahiro Hashimoto
    • G03F1/00
    • G03F1/22G03F1/46G03F1/54G03F1/80H01L21/0274
    • The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
    • 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料,其中:在透光基板上设置有遮光膜; 遮光膜具有层叠结构,其中背面防反射层,遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成,具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成,具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成,并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30%以下。