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    • 3. 发明授权
    • Semiconductor element, semiconductor storage device using the same, data writing method thereof, data reading method thereof, and manufacturing method of those
    • 半导体元件,使用其的半导体存储装置,其数据写入方法,数据读取方法及其制造方法
    • US07727843B2
    • 2010-06-01
    • US11651108
    • 2007-01-09
    • Hiroshi IshiharaKenji MaruyamaTetsuro TamuraHiromasa Hoko
    • Hiroshi IshiharaKenji MaruyamaTetsuro TamuraHiromasa Hoko
    • H01L21/336
    • G11C11/22H01L21/28291H01L27/11585H01L27/1159H01L29/78391
    • The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those. A pn junction diode GD with a ferroelectric gate as the semiconductor element includes a gate electrode formed on a ferroelectric film, an inversion layer formation region in which an inversion layer is formed in a semiconductor substrate below the ferroelectric film according to a polarization direction of the ferroelectric film, a cathode region formed on one of both sides of the inversion layer formation region, and an anode region formed on the other of both the sides.
    • 本发明涉及用于非易失性半导体存储器件等的半导体元件,使用该半导体存储器件的半导体存储器件,其数据写入方法,数据读取方法及其制造方法,其目的是提供 可以进行单元的缩放和积分的半导体元件,数据的存储特性优异,功耗的降低成为可能,使用该半导体元件的半导体存储装置,其数据写入方法,数据读取方法以及 制造方法。 具有铁电栅极作为半导体元件的pn结二极管GD包括形成在铁电体膜上的栅极电极,根据所述铁电体的极化方向在所述铁电体的下方的半导体基板中形成有反型层的反型层形成区域 铁电体膜,形成在反型层形成区域的两侧之一上的阴极区域和形成在两侧的另一侧的阳极区域。
    • 7. 发明授权
    • Access unit for local area network and concentrator system thereof
    • 局域网接入单元及其集中器系统
    • US5619494A
    • 1997-04-08
    • US306521
    • 1994-09-15
    • Toshiyuki NishikawaHiroshi Ishihara
    • Toshiyuki NishikawaHiroshi Ishihara
    • H04L12/12H04L12/28H04L12/42H04L12/40
    • H04L12/42
    • The single port of a concentrator is branched into a plurality of ports by connecting a connector for the former-stage connector to the port of the concentrator and connecting the former-stage connector of the same structure in the other access unit to the connector for the latter-stage circuit to thereby cascade a plurality of access units. The LAN is expanded by connecting the workstation to the port connector of each of the cascaded access units. The thus, connected workstations provide an overlap signal of an AC signal and a DC signal. DC signal extraction circuit in the access unit extracts the DC signal from the overlap signal. A relay drive circuit is operated by the DC signal so that a relay is switched to the port connector side and the circuit is then connected to the workstation.
    • 集中器的单个端口通过将前级连接器的连接器连接到集中器的端口而分支成多个端口,并将另一个存取单元中相同结构的前级连接器连接到用于 后级电路,从而级联多个存取单元。 通过将工作站连接到每个级联的访问单元的端口连接器来扩展LAN。 因此,连接的工作站提供AC信号和DC信号的重叠信号。 存取单元中的直流信号提取电路从重叠信号中提取直流信号。 继电器驱动电路由直流信号操作,使得继电器切换到端口连接器侧,然后电路连接到工作站。
    • 8. 发明授权
    • Vehicle door lock mechanism
    • 车门锁机构
    • US5494321A
    • 1996-02-27
    • US111538
    • 1993-08-25
    • Hiroshi IshiharaYoshinobu Ogura
    • Hiroshi IshiharaYoshinobu Ogura
    • E05B85/24E05B13/00E05B79/08E05C3/06
    • E05B83/36E05B13/005Y10S292/23Y10T292/1047
    • A vehicle door locking assembly includes a housing, a latch member and a pawl member provided in the housing for holding a vehicle door in a closed position, a manually actuatable door opening member provided on the housing for rotational movement, and a rotatably mounted lift lever which is operatively connected with the latch member. A release lever is mounted on the door opening member for rotational movement between a first position in which the release lever engages the lift lever so that rotational movement of the door opening member is transmitted through the release lever and the lift lever to the pawl member to release the door and a second position in which the release lever cannot engage the lift lever so that rotational movement of the door opening member is not transmitted to the lift lever. A locking lever is mounted for rotational movement on the housing between a locking position and an unlocking position, and is operatively connected with the release lever so that when the locking lever is moved to the locking position the release lever is moved to the second position in which the release lever cannot be engaged with the lift lever and so that when the locking lever is moved to the unlocking position the release lever is moved to the first position in which the release lever can be engaged with the lift lever upon operation of the door opening member.
    • 车门锁定组件包括壳体,闩锁构件和设置在壳体中的用于将车门保持在关闭位置的棘爪构件,设置在壳体上用于旋转运动的可手动致动的门打开构件,以及可旋转地安装的提升杆 其与闩锁构件可操作地连接。 释放杆安装在门打开构件上,用于在其中释放杆接合提升杆的第一位置之间进行旋转运动,使得门打开构件的旋转运动通过释放杆传递到提升杆至棘爪构件, 释放门和第二位置,其中释放杆不能接合提升杆,使得门打开构件的旋转运动不被传递到提升杆。 安装锁定杆以在锁定位置和解锁位置之间在壳体上旋转运动,并且与释放杆可操作地连接,使得当锁定杆移动到锁定位置时,释放杆被移动到第二位置 释放杆不能与提升杆接合,并且当锁定杆移动到解锁位置时,释放杆移动到第一位置,在门的操作时释放杆能够与提升杆接合 开会员
    • 10. 发明授权
    • Method for manufacturing a semiconductor device
    • 半导体器件的制造方法
    • US5322810A
    • 1994-06-21
    • US015430
    • 1993-02-09
    • Akitsu AyukawaHiroshi IshiharaShigeo Onishi
    • Akitsu AyukawaHiroshi IshiharaShigeo Onishi
    • H01L21/336H01L21/265
    • H01L29/6659Y10S148/024
    • A method for manufacturing a semiconductor device providing steps of implanting impurity ions on the whole surface of a semiconductor substrate having a plurality of gate portions, in which side walls are formed on gate electrodes, by using the gate portion as masks, and then laminating a first insulating film, carrying out a first heat treatment to diffuse the impurities implanted in the substrate and to form an impurity diffusion layer between the gate portions, removing the first insulating film in a contact formation region which substantially includes the impurity diffusion layer, carrying out a second heat treatment to reduce crystal defects on the impurity diffusion layer and to laminate a second insulating film, which is made of the same material as that of the first insulating film, on the whole surface of the semiconductor substrate including the contact formation region again, and laminating a third insulating film on the whole surface and then carrying out a third heat treatment to flatten the surface.
    • 一种制造半导体器件的方法,提供了通过使用栅极部分作为掩模,在具有多个栅极部分的半导体衬底的整个表面上注入杂质离子,其中侧壁形成在栅电极上,然后层压 第一绝缘膜,进行第一热处理以扩散植入衬底中的杂质并在栅极部分之间形成杂质扩散层,在基本上包括杂质扩散层的接触形成区域中去除第一绝缘膜,执行 第二热处理以减少杂质扩散层上的晶体缺陷,并且将由与第一绝缘膜相同的材料制成的第二绝缘膜层叠在包括接触形成区域的半导体衬底的整个表面上 ,并且在整个表面上层压第三绝缘膜,然后执行第三加热层 使表面变平。