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    • 1. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090218662A1
    • 2009-09-03
    • US12394862
    • 2009-02-27
    • Shinji KudohRyu HirataShinichi Miyazono
    • Shinji KudohRyu HirataShinichi Miyazono
    • H01L29/861H01L29/06
    • H01L29/8613H01L29/0626H01L29/0657H01L29/861
    • A semiconductor device includes: a first semiconductor region of a first conductive type; a second semiconductor region of the first conductive type formed on an upper surface of the first semiconductor region and having a lower impurity concentration than that of the first semiconductor region; a third semiconductor region of the first conductive type formed on the upper surface of the first semiconductor region and having a higher impurity concentration than that of the second semiconductor region; and a fourth semiconductor region of a second conductive type different from the first conductive type formed on upper surfaces of the second semiconductor region and the third semiconductor region. A PN junction is formed between the second semiconductor region and third semiconductor region and the fourth semiconductor region. The second semiconductor region is formed to surround the third semiconductor region.
    • 半导体器件包括:第一导电类型的第一半导体区域; 所述第一导电类型的第二半导体区域形成在所述第一半导体区域的上表面上并且具有比所述第一半导体区域的杂质浓度低的杂质浓度; 第一导电类型的第三半导体区域形成在第一半导体区域的上表面上并且具有比第二半导体区域的杂质浓度更高的杂质浓度; 以及形成在第二半导体区域和第三半导体区域的上表面上的与第一导电类型不同的第二导电类型的第四半导体区域。 在第二半导体区域和第三半导体区域与第四半导体区域之间形成PN结。 第二半导体区域形成为围绕第三半导体区域。