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1. 发明授权

US5617278A Magnetic head structure with reduction of magnetic domain instability 失效
标题翻译：磁头结构，磁畴不稳定性降低
公开(公告)号：US5617278A
公开(公告)日：1997-04-01
申请号：US413071
申请日：1995-03-20
申请人： Shih-Cheng Cheng , Hua-Ching Tong , William C. Cain
发明人： Shih-Cheng Cheng , Hua-Ching Tong , William C. Cain
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3113
摘要： Boundary protrusions or kinks are integrally formed along the perimeter of a magnetic layer of a magnetic transducer for nucleating a predetermined domain pattern in the magnetic layer. These protrusions or kinks behave as domineering pinning sites for the domain walls, overriding other factors such as manufacturing tolerances or external magnetic field, for establishing a stable magnetic domain pattern. As arranged, various kinds of noise encountered during the normal operations of the transducer are significantly reduced, as the noise related problems originated from the magnetic domain instabilities in the magnetic layers are substantially curtailed.
摘要翻译：边界突起或扭结沿着磁换能器的磁性层的周边整体地形成，用于使磁性层中的预定畴图案成核。这些突起或扭结表现为畴壁的霸主钉扎位置，覆盖诸如制造公差或外部磁场的其他因素，以建立稳定的磁畴图案。如上所述，由于来自磁性层中的磁畴不稳定性的噪声相关问题大大减少，所以在换能器的正常操作期间遇到的各种噪声显着降低。

2. 发明授权

US07007372B1 Method for making high speed, high areal density inductive write structure 失效
标题翻译：制造高速，高密度感应写入结构的方法
公开(公告)号：US07007372B1
公开(公告)日：2006-03-07
申请号：US10656311
申请日：2003-09-05
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

3. 发明授权

US06351355B1 Spin valve device with improved thermal stability 有权
标题翻译：具有改善的热稳定性的自旋阀装置
公开(公告)号：US06351355B1
公开(公告)日：2002-02-26
申请号：US09247814
申请日：1999-02-09
申请人： Tai Min , Hua-Ching Tong , Yiming Huai , Wengie Chen
发明人： Tai Min , Hua-Ching Tong , Yiming Huai , Wengie Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996
摘要： The present invention provides spin valve with a magnetic compensation field which couples to the pinned layer and counteracts sensing current induced magnetic field. The spin valve sensor of the present invention may be formed having a structure comprising: a free layer, a first spacer layer, a pinned layer, a pinning layer, a second spacer layer, and a compensation layer. The compensation layer may be formed of ferromagnetic material with its magnetization set so that the compensation field oriented in a reinforcing relationship with the magnetization of the pinned layer. Current through the compensation layer and the spacer layer may add to the compensation field. The spacer layer may be formed of a nonmagnetic material of sufficient thickness to prevent interaction between the pinning layer and the compensation layer while providing a sufficiently small distance to allow sufficient magnetic coupling to the pinned layer. The present invention may be used to improve thermal stability and reduce Barkhausen noise while not impacting output symmetry.
摘要翻译：本发明提供具有磁补偿场的自旋阀，其耦合到被钉扎层并抵消感测电流感应磁场。本发明的自旋阀传感器可以形成为具有自由层，第一间隔层，钉扎层，钉扎层，第二间隔层和补偿层的结构。补偿层可由铁磁材料形成，其磁化强度设定为使得补偿场定向成与被钉扎层的磁化强化关系。通过补偿层和间隔层的电流可能增加到补偿场。间隔层可以由足够厚度的非磁性材料形成，以防止钉扎层和补偿层之间的相互作用，同时提供足够小的距离以允许与被钉扎层的足够的磁耦合。本发明可用于改善热稳定性并降低巴克豪森噪声，同时不影响输出对称性。

4. 发明授权

US06468436B1 Method and system for providing a magnetoresistive head having higher efficiency 有权
标题翻译：提供具有更高效率的磁阻头的方法和系统
公开(公告)号：US06468436B1
公开(公告)日：2002-10-22
申请号：US09614241
申请日：2000-07-12
申请人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
发明人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B5/3932 , G11B5/3935 , G11B2005/3996 , Y10T29/49052
摘要： A system and method for providing a head for reading data is disclosed. The method and system include providing a magnetoresistive element and providing a flux guide having a high resistivity. The magnetoresistive element has an end. The flux guide also has an end. The end of the flux guide is adjacent to the end of the magnetoresistive element.
摘要翻译：公开了一种用于提供用于读取数据的磁头的系统和方法。该方法和系统包括提供磁阻元件并提供具有高电阻率的磁通引导件。磁阻元件有一端。助焊剂也有一个结束。磁通引导件的端部与磁阻元件的端部相邻。

5. 发明授权

US06459552B1 Thin film read head with coplanar pole tips 失效
标题翻译：薄膜读头与共面极尖
公开(公告)号：US06459552B1
公开(公告)日：2002-10-01
申请号：US09528858
申请日：2000-03-20
申请人： Francis H. Liu , Hua-Ching Tong , Samuel W. Yuan
发明人： Francis H. Liu , Hua-Ching Tong , Samuel W. Yuan
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3169 , G11B5/3967 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A thin film magnetic head employs pole tips members which are coplanar in a plane across the write gap to produce a written track whose width is determined by the thickness of the pole tip members. The coplanar write structure may be combined with a multilayer read sensor disposed in the write gap to produce a narrow trackwidth thin film magnetic head having both write and read capabilities.
摘要翻译：薄膜磁头使用在写入间隙中的平面中共面的极尖构件，以产生其宽度由极尖构件的厚度确定的写入轨道。共面写入结构可以与设置在写入间隙中的多层读取传感器组合以产生具有写入和读取能力的窄轨道宽度薄膜磁头。

6. 发明授权

US5859754A Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals 失效
公开(公告)号：US5859754A
公开(公告)日：1999-01-12
申请号：US833058
申请日：1997-04-03
申请人： Hua-Ching Tong , Francis H. Liu , Minshen Tan , Robert Earl Rottmayer , Jian-Gang Zhu , Samuel W. Yuan
发明人： Hua-Ching Tong , Francis H. Liu , Minshen Tan , Robert Earl Rottmayer , Jian-Gang Zhu , Samuel W. Yuan
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3954 , G11B2005/3996
摘要： Magnetic transducers are formed with common magnetic exchange layers capable of providing assertive and complementary signals. The transducers include an assertive transducer portion and a complementary transducer portion. Between the two transducer portions is a common bias portion which comprises an antiferromagnetic layer providing bias fields in different directions to the respective transducer portions. During normal operations, a current is directed into each of the transducer portions. The assertive transducer portion, being magnetically biased in one direction, generates a varying voltage as an assertive version of the electrical signal. The complementary transducer, being magnetically biased in another direction, generates another varying voltage as a complementary version of the electrical signal. In one embodiment, the transducer portions are implemented to operate as an anisotropic MR(AMR) sensor. In a second embodiment, the transducer portions operate as a giant MR(GMR) or spin valve sensor.

7. 发明授权

US5792547A Low noise magnetic head for high frequency recording 失效
标题翻译：低噪音磁头用于高频录音
公开(公告)号：US5792547A
公开(公告)日：1998-08-11
申请号：US607130
申请日：1996-02-26
申请人： Francis H. Liu , Minshen Tan , Hua-Ching Tong
发明人： Francis H. Liu , Minshen Tan , Hua-Ching Tong
IPC分类号： G11B5/31 , G11B5/39 , H01F10/32 , G11B5/127
CPC分类号： B82Y25/00 , G11B5/3113 , G11B5/3903 , G11B5/3925 , H01F10/3218 , G11B5/3163 , Y10S428/90 , Y10T428/1186 , Y10T428/24942
摘要： A laminated pole structure for use in a low noise magnetic head suitable for high frequency signal operation is formed by interleaving a plurality of ferromagnetic layers and electrically insulating antiferromagnetic layers so as to form interface surfaces therebetween. External magnetic fields are applied as the interface surfaces are being formed for establishing exchange anisotropies with predetermined permanent exchange pinning directions in the ferromagnetic layers. The exchange anisotropies may be in the same or opposite directions, as defined by the external magnetic fields. In one embodiment, the pole structure has an open edge lamination, while in another embodiment the pole structure has a closed edge lamination. In still another embodiment, the antiferromagnetic layers include predetermined patterns of nonmagnetic material.
摘要翻译：用于适用于高频信号操作的低噪声磁头中的层叠极结构是通过交错多个铁磁层和电绝缘反铁磁层形成的，以便在它们之间形成界面。当形成界面表面以在铁磁层中建立具有预定永久交换钉扎方向的交换各向异性时，施加外部磁场。交换各向异性可以是与外部磁场所定义的相同或相反的方向。在一个实施例中，极结构具有开口边缘层叠，而在另一实施例中，极结构具有封闭边缘层叠。在另一个实施例中，反铁磁层包括非磁性材料的预定图案。

8. 发明授权

US5612098A Method of forming a thin film magnetic structure having ferromagnetic and antiferromagnetic layers 失效
标题翻译：形成具有铁磁性和反铁磁性层的薄膜磁性结构的方法
公开(公告)号：US5612098A
公开(公告)日：1997-03-18
申请号：US696656
申请日：1996-08-14
申请人： Minshen Tan , Hua-Ching Tong , Francis H. Liu , Swie-In Tan
发明人： Minshen Tan , Hua-Ching Tong , Francis H. Liu , Swie-In Tan
IPC分类号： C23C14/35 , G01R33/09 , G11B5/31 , G11B5/39 , H01F10/32 , H01F41/30 , C23C14/08
CPC分类号： B82Y25/00 , B82Y40/00 , C23C14/351 , G01R33/093 , G11B5/3109 , G11B5/3113 , G11B5/3903 , G11B5/3948 , H01F10/3218 , H01F10/3254 , H01F41/302 , Y10T428/265
摘要： A method of forming a magnetic structure having layers with different magnetization orientations provided by a common magnetic bias layer includes the steps of depositing an antiferromagnetic layer between first and second ferromagnetic layers. During the deposition of the first and second ferromagnetic layers, magnetization fields of different orientations are employed separately to induce different directions of magnetization in the first and second layers. The different directions of magnetization in the first and second layers are sustained, through the process of exchange coupling, by the interposed antiferromagnetic layer which serves as the bias layer. A magnetic structure thus fabricated, can be used as a read transducer capable of generating differential signals with common mode noise rejection, and can be used as a magnetic pole for a magnetic head with reduced Barkhausen noise.
摘要翻译：形成具有由公共偏磁层提供的具有不同磁化取向的层的磁性结构的方法包括以下步骤：在第一和第二铁磁层之间沉积反铁磁性层。在沉积第一和第二铁磁层期间，分别采用不同取向的磁化场以在第一和第二层中引起不同的磁化方向。通过交换耦合的过程，通过用作偏置层的插入的反铁磁层来维持第一和第二层中不同的磁化方向。如此制造的磁结构可以用作能够产生具有共模噪声抑制的差分信号的读取传感器，并且可以用作具有降低的巴克豪森噪声的磁头的磁极。

9. 发明授权

US06873547B1 High capacity MRAM memory array architecture 有权
标题翻译：高容量MRAM存储阵列架构
公开(公告)号：US06873547B1
公开(公告)日：2005-03-29
申请号：US10080396
申请日：2002-02-22
申请人： Xizeng(Stone) Shi , Hua-Ching Tong , Aric K. Menon
发明人： Xizeng(Stone) Shi , Hua-Ching Tong , Aric K. Menon
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16
摘要： A magnetic memory is disclosed. The magnetic memory includes a first magnetic tunneling junction and a reference magnetic tunneling junction. The first magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The reference magnetic tunneling junction includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer. The magnetic memory also includes means for comparing a first output of the first magnetic tunneling junction with a reference output of the reference magnetic tunneling junction.
摘要翻译：公开了磁存储器。磁存储器包括第一磁隧道结和参考磁隧道结。第一磁隧道结包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的第一绝缘层。参考磁隧道结包括第三铁磁层，第四铁磁层和第三铁磁层与第四铁磁层之间的第二绝缘层。磁存储器还包括用于将第一磁隧道结的第一输出与参考磁隧道结的参考输出进行比较的装置。

10. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

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