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1. 发明授权

US4267172A Bis(triorganosilylalkyl) phosphites 失效
标题翻译：双（三有机甲硅烷基烷基）亚磷酸酯
公开(公告)号：US4267172A
公开(公告)日：1981-05-12
申请号：US78772
申请日：1979-09-25
申请人： Shigeshi Toyoshima , Ryuichi Sato , Koichi Ito , Toshio Shinohara , Masatoshi Arai
发明人： Shigeshi Toyoshima , Ryuichi Sato , Koichi Ito , Toshio Shinohara , Masatoshi Arai
IPC分类号： C08K5/00 , A01N55/10 , A61K31/695 , A61P9/12 , A61P35/00 , C07F9/02 , C07F9/141 , C08K5/5419 , A01N55/00 , C07F7/08
CPC分类号： A61K31/695 , C07F9/1415
摘要： The present invention presents a novel class of compounds bis(triorganosilylalkyl) phosphites, e.g. bis(trimethylsilylmethyl) phosphite. The compound is readily prepared by the reaction of a corresponding triorganosilyl alkanol with phosphorus trichloride or by the partial hydrolysis of a corresponding tris(triorganosilylalkyl) phosphite with an equimolar amount of water followed by distillation of the reaction mixture.The compound has a remarkable anti-transplanted tumor effectiveness as established by the test with mice as the test animals for preventing the growth of Ehrlich's cancer cells and Sarcoma 180 cells. The compound has very low toxicity when orally administrated.
摘要翻译：本发明提供了一类新颖的化合物双（三有机甲硅烷基）亚磷酸酯，例如双（三甲基甲硅烷基甲基）亚磷酸酯。通过相应的三有机甲硅烷基链烷醇与三氯化磷的反应或通过相应的三（三有机甲硅烷基烷基）亚磷酸酯与等摩尔量的水部分水解然后蒸馏反应混合物来容易地制备该化合物。该化合物具有显着的抗移植肿瘤效力，其通过用小鼠作为用于预防Ehrlich癌细胞和肉瘤180细胞生长的试验动物的试验建立。该化合物在口服时具有非常低的毒性。

2. 发明授权

US4033991A Method for preparing organosilanes containing silicon-bonded oxime groups 失效
标题翻译：制备含硅键肟基团的有机硅烷的方法
公开(公告)号：US4033991A
公开(公告)日：1977-07-05
申请号：US643812
申请日：1975-12-23
申请人： Toshio Shinohara , Masatoshi Arai
发明人： Toshio Shinohara , Masatoshi Arai
IPC分类号： C07F7/10 , C07F7/08 , C08L83/04
CPC分类号： C07F7/0892 , C08K5/54 , C08G77/06
摘要： Organosilanes containing silicon-bonded oxime groups, i.e., ketoximosilanes, are prepared by reacting an halogenosilane with an alkali metal oxime, using no acid acceptors. This method of preparation is safe from the potentiality of explosive hazards that may exist inadvertently or inherently in the conventional reaction system, and also capable of producing amine chloride-free products.
摘要翻译：含有硅键合肟基的有机硅烷，即酮肟基硅烷，通过卤代硅烷与碱金属肟反应，不使用酸受体来制备。这种制备方法可以避免常规反应体系中无意中或固有地存在的爆炸危险的潜力，并且还能够生产无氯化胺的产物。

3. 发明授权

US4096161A Process for the preparation of halogenosilanes 失效
标题翻译：卤代硅烷的制备方法
公开(公告)号：US4096161A
公开(公告)日：1978-06-20
申请号：US742845
申请日：1976-11-18
申请人： Toshio Shinohara , Masatoshi Arai , Shoji Ichinohe
发明人： Toshio Shinohara , Masatoshi Arai , Shoji Ichinohe
IPC分类号： C01B33/107 , C07F7/12 , C07F7/08
CPC分类号： C07F7/125
摘要： Halogenosilanes are prepared from an organohalogenosilane and an organopolysiloxane as the starting materials by subjecting them to an intermolecular redistribution reaction in the presence of a monohydrochloride of a hexaalkylphosphotriamide. The thus prepared halogenosilanes, which are different from the starting halogenosilane reactant, are very useful in the silicone industry.
摘要翻译：卤代硅烷由有机基卤硅烷和有机聚硅氧烷作为原料，通过在六烷基磷酰三胺的一盐酸盐存在下进行分子间再分布反应。如此制备的与起始卤代硅烷反应物不同的卤代硅烷在硅氧烷工业中是非常有用的。

4. 发明授权

US4089884A Tris(triorganosilylalkyl) phosphites and method for preparing them 失效
标题翻译：三（三有机甲硅烷基烷基）亚磷酸酯及其制备方法
公开(公告)号：US4089884A
公开(公告)日：1978-05-16
申请号：US814939
申请日：1977-07-12
申请人： Toshio Shinohara , Masatoshi Arai , Kenichi Kojima
发明人： Toshio Shinohara , Masatoshi Arai , Kenichi Kojima
IPC分类号： C08K5/00 , B01J31/00 , C07F7/08 , C07F9/141 , C08K5/5419 , C08L7/00 , C08L21/00 , C07F7/10
CPC分类号： C07F9/1411
摘要： A novel class of compounds, tris(triorganosilylalkyl) phosphites, represented by the general formula [R.sub.3 Si(CH.sub.2).sub.n O].sub.3 P where R is a monovalent hydrocarbon group and n is 1, 2 or 3. These novel compounds may be synthesized by dehydrochlorination reaction between a triorganosilyl-substituted alkanol and phosphorus trichloride in the presence of a tertiary amine. They have useful values as agricultural chemicals because of their biological activities and also as intermediate compounds in the preparation of certain medicines and chemicals.
摘要翻译：由通式[R3Si（CH2）nO] 3P表示的新一类化合物，三（三有机甲硅烷基烷基）亚磷酸酯，其中R是一价烃基，n是1,2或3.这些新化合物可以通过脱氯化氢反应在叔胺的存在下在三有机甲硅烷基取代的链烷醇和三氯化磷之间。由于它们的生物活性，它们作为农药具有有价值的作用，也是制备某些药物和化学物质的中间体化合物。

5. 发明授权

US08629526B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08629526B2
公开(公告)日：2014-01-14
申请号：US13233941
申请日：2011-09-15
申请人： Tsuyoshi Ohta , Masatoshi Arai , Miwako Suzuki
发明人： Tsuyoshi Ohta , Masatoshi Arai , Miwako Suzuki
IPC分类号： H01L29/47
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/36 , H01L29/402 , H01L29/66136 , H01L29/66143 , H01L29/861
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的多个第二半导体区域，第二导电类型的第三半导体区域和第一电极。第二区域分别设置在第一层的第一主表面侧。第三区域设置在第一层的第一主表面侧，以围绕第二区域。第一电极设置在第一层和第二区域上。第一层具有第一部分和第二部分。第二部分具有比第一部分更低的电阻率。第二部分设置在第二区域之间以及第一部分与第一主表面之间，并且设置在第三区域的外部以及第一部分与第一主表面之间。

6. 发明授权

US08576319B2 Image sensor, semiconductor device and image sensing method 有权
标题翻译：图像传感器，半导体器件和图像感测方法
公开(公告)号：US08576319B2
公开(公告)日：2013-11-05
申请号：US12929004
申请日：2010-12-22
申请人： Masatoshi Kureta , Masatoshi Arai , Takeharu Etoh , Konoe Etoh , Toshiaki Akino
发明人： Masatoshi Kureta , Masatoshi Arai , Takeharu Etoh , Konoe Etoh , Toshiaki Akino
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04
CPC分类号： H04N5/335 , H01L27/14806 , H04N5/3592 , H04N5/37213 , H04N5/3728
摘要： An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stage 31 of CCD memory 30. Final transfer stage 32 is formed so as to be connected to the input transfer stage 31 and able to transfer signal charges to the input transfer stage 31. In an accumulation mode, read gate 42 and drain gate 40 are not turned on and the next transfer operation of the CCD memory 30 is conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage 31. In this state, the signal charges obtained newly at photoelectric conversion section 20 at the next image pickup timing are injected into the input transfer stage 31 by way of input gate 21. As a result of this operation, the signal charges obtained at the last image pickup timing are added to the signal charges accumulated in the input transfer stage 31 so that integrated signal charges obtained by adding the two sets of signal charges are accumulated in the input transfer stage 31.
摘要翻译：图像传感器和图像感测方法可以在高速图像拾取操作中获得具有高S / N比的图像信号。信号电荷被输入到CCD存储器30的输入传送级31.最终传送级32被形成为连接到输入传送级31并且能够将信号电荷传送到输入传送级31.在累加模式下，读取门42和漏极门40不导通，并且进行CCD存储器30的下一个传送操作。累积的信号电荷逐级传送，并且在第一摄像定时获得的信号电荷被直接传送到输入传送级31.在这种状态下，在光电转换部20新获得的信号电荷下一个图像拾取定时通过输入门21被注入到输入传送级31.作为该操作的结果，在最后图像拾取定时获得的信号电荷被加到累积在输入传送级31中的信号电荷通过添加两组信号电荷而获得的积分信号电荷被积累在输入传送级31中。

7. 发明申请

US20130248995A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130248995A1
公开(公告)日：2013-09-26
申请号：US13607533
申请日：2012-09-07
申请人： Tatsuya NISHIWAKI , Tsuyoshi Ota , Norio Yasuhara , Masatoshi Arai , Takahiro Kawano
发明人： Tatsuya NISHIWAKI , Tsuyoshi Ota , Norio Yasuhara , Masatoshi Arai , Takahiro Kawano
IPC分类号： H01L29/78 , H01L21/82 , H01L27/088
CPC分类号： H01L29/7827 , H01L21/82 , H01L27/088 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/41775 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type placed above the first semiconductor layer, a second semiconductor layer of the first conductivity type placed above the base layer, multiple gate electrodes having upper end is positioned above the upper surface of the base layer, a lower end positioned below the bottom of the base layer, and contacting the first semiconductor layer, the second semiconductor layer, and the base layer through a gate insulating film, insulating component arranged above the gate electrode in which the upper surface is positioned below the upper surface of the second semiconductor layer, and a conductive layer covering the second semiconductor layer from the upper end to the bottom end.
摘要翻译：半导体器件包括第一导电类型的第一半导体层，位于第一半导体层上方的第二导电类型的基极层，位于基极层之上的第一导电类型的第二半导体层，具有上端的多个栅电极位于所述基底层的上表面的上方，位于所述基底层的底部下方的下端，并且通过栅极绝缘膜与所述第一半导体层，所述第二半导体层和所述基底层接触，栅电极，其上表面位于第二半导体层的上表面下方，以及导电层，其从上端到底端覆盖第二半导体层。

8. 发明申请

US20120270155A1 COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：化合物，聚合化合物，酸发生剂，抗蚀剂组合物和形成耐药性图案的方法
公开(公告)号：US20120270155A1
公开(公告)日：2012-10-25
申请号：US13449727
申请日：2012-04-18
申请人： Yoshitaka Komuro , Yoshiyuki Utsumi , Akiya Kawaue , Masatoshi Arai
发明人： Yoshitaka Komuro , Yoshiyuki Utsumi , Akiya Kawaue , Masatoshi Arai
IPC分类号： C07C309/23 , C07D327/04 , G03F7/20 , C07D493/18 , C08F128/02 , G03F7/027
CPC分类号： C07C381/12 , C07C309/12 , C07C309/19 , C07C309/42 , C07C309/43 , C07C311/09 , C07C311/48 , C07C2601/08 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D307/93 , C07D493/18 , C08F220/28 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0397 , G03F7/2041 , Y10S430/115 , Y10S430/122 , Y10S522/904
摘要： There are provided a novel compound, a polymeric compound, a resist composition, an acid generator and a method of forming a resist pattern the compound represented by general formula (1-1): wherein each of R1 and R3 independently represents a single bond or a divalent linking group; A represents a divalent linking group; each of R2 and R4 independently represents a hydroxyl group, a hydrocarbon group which may have a substituent, or a group represented by general formula (1-an1), (1-an2) or (1-an3), provided that at least one of R2 and R4 represents a group represented by general formula (1-an1), (1-an2) or (1-an3); and n0 is preferably 0 or 1, and wherein Y1 represents a single bond or —SO2—; R5 represents a linear or branched monovalent hydrocarbon group of 1 to 10 carbon atoms, cyclic monovalent hydrocarbon group of 3 to 20 carbon atoms or monovalent hydrocarbon group of 3 to 20 carbon atoms having a cyclic partial structure which may be substituted with a fluorine atom; and M+ represents an organic cation or a metal cation,
摘要翻译：提供了一种新型化合物，高分子化合物，抗蚀剂组合物，酸产生剂和由通式（1-1）表示的化合物形成抗蚀剂图案的方法：其中R 1和R 3各自独立地表示单键或二价连接基团; A表示二价连接基团; R2和R4各自独立地表示羟基，可以具有取代基的烃基或由通式（1-an1），（1-an2）或（1-an3）表示的基团），条件是至少一个 R 2和R 4表示由通式（1-an1），（1-an2）或（1-an3）表示的基团。 n0优选为0或1，并且其中Y1表示单键或-SO2-; R5表示1〜10个碳原子的直链或支链一价烃基，3〜20个碳原子的环状一价烃基或具有可被氟原子取代的环状部分结构的3〜20个碳原子的一价烃基; M +表示有机阳离子或金属阳离子，

9. 发明申请

US20120241853A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120241853A1
公开(公告)日：2012-09-27
申请号：US13236588
申请日：2011-09-19
申请人： Tsuyoshi OHTA , Masatoshi Arai , Miwako Suzuki
发明人： Tsuyoshi OHTA , Masatoshi Arai , Miwako Suzuki
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/407 , H01L29/42368 , H01L29/456 , H01L29/47 , H01L29/66143 , H01L29/7806 , H01L29/872 , H01L29/8725
摘要： A semiconductor layer has a second impurity concentration. First trenches are formed in the semiconductor layer to extend downward from an upper surface of the semiconductor layer. Each of insulation layers is formed along each of the inner walls of the first trenches. Each of conductive layers is formed to bury each of the first trenches via each of the insulation layers, and extends downward from the upper surface of the semiconductor layer to a first position. A first semiconductor diffusion layer reaches a second position from the upper surface of the semiconductor layer, is positioned between the first trenches, and has a third impurity concentration lower than the second impurity concentration. A length from the upper surface of the semiconductor layer to the second position is equal to or less than half a length from the upper surface of the semiconductor layer to the first position.
摘要翻译：半导体层具有第二杂质浓度。第一沟槽形成在半导体层中，从半导体层的上表面向下延伸。每个绝缘层沿着第一沟槽的每个内壁形成。每个导电层被形成为经由每个绝缘层埋入每个第一沟槽，并且从半导体层的上表面向下延伸到第一位置。第一半导体扩散层从半导体层的上表面到达第二位置，位于第一沟槽之间，并且具有低于第二杂质浓度的第三杂质浓度。从半导体层的上表面到第二位置的长度等于或小于从半导体层的上表面到第一位置的一半长度。

10. 发明申请

US20110157448A1 Image sensor, semiconductor device and image sensing method 有权
标题翻译：图像传感器，半导体器件和图像感测方法
公开(公告)号：US20110157448A1
公开(公告)日：2011-06-30
申请号：US12929004
申请日：2010-12-22
申请人： Masatoshi Kureta , Masatoshi Arai , Takeharu Etoh , Konoe Etoh , Toshiaki Akino
发明人： Masatoshi Kureta , Masatoshi Arai , Takeharu Etoh , Konoe Etoh , Toshiaki Akino
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H04N5/335 , H01L27/14806 , H04N5/3592 , H04N5/37213 , H04N5/3728
摘要： An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stage 31 of CCD memory 30. Final transfer stage 32 is formed so as to be connected to the input transfer stage 31 and able to transfer signal charges to the input transfer stage 31. In an accumulation mode, read gate 42 and drain gate 40 are not turned on and the next transfer operation of the CCD memory 30 is conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage 31. In this state, the signal charges obtained newly at photoelectric conversion section 20 at the next image pickup timing are injected into the input transfer stage 31 by way of input gate 21. As a result of this operation, the signal charges obtained at the last image pickup timing are added to the signal charges accumulated in the input transfer stage 31 so that integrated signal charges obtained by adding the two sets of signal charges are accumulated in the input transfer stage 31.
摘要翻译：图像传感器和图像感测方法可以在高速图像拾取操作中获得具有高S / N比的图像信号。信号电荷被输入到CCD存储器30的输入传送级31.最终传送级32被形成为连接到输入传送级31并且能够将信号电荷传送到输入传送级31.在累加模式下，读取门42和漏极门40不导通，并且进行CCD存储器30的下一个传送操作。累积的信号电荷逐级传送，并且在第一摄像定时获得的信号电荷被直接传送到输入传送级31.在这种状态下，在光电转换部20新获得的信号电荷下一个图像拾取定时通过输入门21被注入到输入传送级31.作为该操作的结果，在最后图像拾取定时获得的信号电荷被加到累积在输入传送级31中的信号电荷通过添加两组信号电荷而获得的积分信号电荷被积累在输入传送级31中。

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