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1. 发明授权

US08035280B2 MEMS vibrating structure using a single-crystal piezoelectric thin-film layer having domain inversions 有权
标题翻译：使用具有畴倒置的单晶压电薄膜层的MEMS振动结构
公开(公告)号：US08035280B2
公开(公告)日：2011-10-11
申请号：US13037584
申请日：2011-03-01
申请人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
发明人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
IPC分类号： H01L41/08
CPC分类号： H03H9/2405 , H03H9/02228 , H03H9/02275 , H03H2009/241
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
摘要翻译：微机电系统技术领域本发明涉及由MEMS锚定系统支撑的微电子机械系统（MEMS）振动结构，并且包括确定MEMS振动结构的某些振动特性的具有畴反转的单晶压电薄膜层。 MEMS振动结构可能具有主要的横向振动或主要厚度振动。单晶压电薄膜层可以包括钽酸锂或铌酸锂，并且可以提供具有精确尺寸和形状的MEMS振动结构，其可以提供高精度并且能够在单个衬底上制造具有不同谐振频率的多个谐振器。

2. 发明申请

US20110148252A1 MEMS VIBRATING STRUCTURE USING A SINGLE-CRYSTAL PIEZOELECTRIC THIN-FILM LAYER HAVING DOMAIN INVERSIONS 有权
标题翻译：使用具有域反转的单晶压电薄膜层的MEMS振动结构
公开(公告)号：US20110148252A1
公开(公告)日：2011-06-23
申请号：US13037584
申请日：2011-03-01
申请人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
发明人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
IPC分类号： H01L41/04
CPC分类号： H03H9/2405 , H03H9/02228 , H03H9/02275 , H03H2009/241
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
摘要翻译：微机电系统技术领域本发明涉及由MEMS锚定系统支撑的微电子机械系统（MEMS）振动结构，并且包括确定MEMS振动结构的某些振动特性的具有畴反转的单晶压电薄膜层。 MEMS振动结构可能具有主要的横向振动或主要厚度振动。单晶压电薄膜层可以包括钽酸锂或铌酸锂，并且可以提供具有精确尺寸和形状的MEMS振动结构，其可以提供高精度并且能够在单个衬底上制造具有不同谐振频率的多个谐振器。

3. 发明申请

US20130020279A1 PLANARIZED SACRIFICIAL LAYER FOR MEMS FABRICATION 审中-公开
标题翻译：用于MEMS制造的平面非常薄层
公开(公告)号：US20130020279A1
公开(公告)日：2013-01-24
申请号：US13598962
申请日：2012-08-30
申请人： Seungbae Lee , Sheng-Shian Li , Kushal Bhattacharjee
发明人： Seungbae Lee , Sheng-Shian Li , Kushal Bhattacharjee
IPC分类号： B05D5/12 , H01L41/22 , B05D3/10
CPC分类号： B81C1/00476 , Y10T29/42
摘要： A method of forming a device is provided. The method includes providing a substrate, forming a sacrificial layer over the substrate, and forming a field layer around the sacrificial layer. After formation, both the sacrificial layer and the field layer are planarized. A component is then formed over the planarized sacrificial layer and the planarized field layer. The component has a first electrode and a second electrode and a single crystal wafer disposed between the first and second electrodes. The component includes anchors disposed substantially over the field layer. Once the component is formed, the sacrificial layer is released with an etchant having a selectivity for the sacrificial layer wherein a cavity is formed beneath the component. The cavity allows free movement within the cavity during operation of the device. The etchant does not release the field layer and the component so the field layer remains below the anchors.
摘要翻译：提供了一种形成装置的方法。该方法包括提供衬底，在衬底上形成牺牲层，以及在牺牲层周围形成场层。在形成之后，牺牲层和场层都被平坦化。然后在平坦化的牺牲层和平坦化的场层上形成一个分量。该部件具有设置在第一和第二电极之间的第一电极和第二电极以及单晶晶片。该部件包括基本上设置在场层上的锚。一旦形成了部件，牺牲层就可以用对牺牲层具有选择性的蚀刻剂来释放，其中在部件之下形成空腔。空腔允许在设备操作期间在空腔内自由移动。蚀刻剂不释放场层和组分，因此场层保持在锚点下方。

4. 发明授权

US08278802B1 Planarized sacrificial layer for MEMS fabrication 有权
标题翻译： MEMS制造的平面牺牲层
公开(公告)号：US08278802B1
公开(公告)日：2012-10-02
申请号：US12429455
申请日：2009-04-24
申请人： Seungbae Lee , Sheng-Shian Li , Kushal Bhattacharjee
发明人： Seungbae Lee , Sheng-Shian Li , Kushal Bhattacharjee
IPC分类号： H01L21/00
CPC分类号： B81C1/00476 , Y10T29/42
摘要： A method of forming a device is provided. The method includes providing a substrate, forming a sacrificial layer over the substrate, and forming an field layer around the sacrificial layer. After formation, both the sacrificial layer and the field layer are planarized. A component is then formed over the planarized sacrificial layer and the planarized field layer. The component has a first electrode and a second electrode and a single crystal wafer disposed between the first electrode and the second electrode. The component also includes anchors disposed substantially over the field layer. Once the component is formed, the sacrificial layer is released with an etchant having a selectivity for the sacrificial layer such that a cavity is formed beneath the component. The cavity allows free movement component within the cavity during operation of the device. In addition, the etchant does not release the field layer and the component such that the field layer remains below the anchors.
摘要翻译：提供了一种形成装置的方法。该方法包括提供衬底，在衬底上形成牺牲层，以及在牺牲层周围形成场层。在形成之后，牺牲层和场层都被平坦化。然后在平坦化的牺牲层和平坦化的场层上形成一个分量。该部件具有设置在第一电极和第二电极之间的第一电极和第二电极以及单晶晶片。该部件还包括基本上设置在场层上的锚。一旦形成了部件，牺牲层就被用于对牺牲层具有选择性的蚀刻剂释放，使得在部件之下形成空腔。空腔在设备运行期间允许空腔内的自由运动部件。此外，蚀刻剂不会释放场层和组件，使得场层保持在锚点下方。

5. 发明授权

US07586239B1 MEMS vibrating structure using a single-crystal piezoelectric thin film layer 有权
标题翻译： MEMS振动结构采用单晶压电薄膜层
公开(公告)号：US07586239B1
公开(公告)日：2009-09-08
申请号：US12134483
申请日：2008-06-06
申请人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
发明人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
IPC分类号： H01L41/08
CPC分类号： H03H9/02338 , H03H3/0072 , H03H9/02275 , H03H9/2436 , H03H2009/02496 , H03H2009/241 , H03H2009/2442
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure having dominant lateral vibrations supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer that has been grown with a specific crystal orientation. Since the MEMS vibrating structure has dominant lateral vibrations, its resonant frequency may be controlled by its size and shape, rather than layer thickness, which provides high accuracy and enables multiple resonators having different resonant frequencies on a single substrate.
摘要翻译：微机电系统（MEMS）振动结构技术领域本发明涉及由MEMS锚系统支撑的主要侧向振动的微电子机械系统（MEMS）振动结构，并且包括已经以特定的晶体取向生长的单晶压电薄膜层。由于MEMS振动结构具有主要的横向振动，其谐振频率可以通过其尺寸和形状而不是层厚度来控制，其提供高精度并且使得在单个基板上具有不同谐振频率的多个谐振器。

6. 发明授权

US09369105B1 Method for manufacturing a vibrating MEMS circuit 有权
标题翻译：振动MEMS电路的制造方法
公开(公告)号：US09369105B1
公开(公告)日：2016-06-14
申请号：US12202624
申请日：2008-09-02
申请人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
发明人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
IPC分类号： H03H3/02 , H01L41/04 , H03H9/02 , H03H9/05 , H01L41/047 , H01L41/053 , H01L41/29 , H01L41/311 , H03H9/15
CPC分类号： H03H3/02 , H01L41/047 , H01L41/053 , H01L41/29 , H01L41/311 , H03H3/0076 , H03H9/02015 , H03H9/02062 , H03H9/0207 , H03H9/0542 , H03H9/0547 , H03H9/17 , H03H2009/02283 , H03H2009/02299 , H03H2009/155 , Y10T29/42 , Y10T29/49005 , Y10T29/49147 , Y10T29/49155
摘要： A method for making a micro-electro-mechanical systems (MEMS) vibrating structure is disclosed. The MEMS is supported by a MEMS anchor system and includes a single-crystal piezoelectric thin-film layer that has a specific non-standard crystal orientation, which may be selected to increase an electromechanical coupling coefficient, decrease a temperature coefficient of frequency, or both. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
摘要翻译：公开了一种制造微电子机械系统（MEMS）振动结构的方法。 MEMS由MEMS锚系统支撑，并且包括具有特定非标准晶体取向的单晶压电薄膜层，其可以被选择以增加机电耦合系数，降低频率的温度系数或两者。 MEMS振动结构可能具有主要的横向振动或主要厚度振动。单晶压电薄膜层可以包括钽酸锂或铌酸锂，并且可以提供具有精确尺寸和形状的MEMS振动结构，其可以提供高精度并且能够在单个衬底上制造具有不同谐振频率的多个谐振器。

7. 发明授权

US07898158B1 MEMS vibrating structure using a single-crystal piezoelectric thin-film layer having domain inversions 有权
公开(公告)号：US07898158B1
公开(公告)日：2011-03-01
申请号：US12263883
申请日：2008-11-03
申请人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
发明人： Sheng-Shian Li , Seungbae Lee , Kushal Bhattacharjee
IPC分类号： H01L41/08 , H01L41/04
CPC分类号： H03H9/2405 , H03H9/02228 , H03H9/02275 , H03H2009/241
摘要： The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.

8. 发明授权

US07750759B1 Multi-mode MEMS resonator array 有权
标题翻译：多模MEMS谐振器阵列
公开(公告)号：US07750759B1
公开(公告)日：2010-07-06
申请号：US12112278
申请日：2008-04-30
申请人： Seungbae Lee , Kushal Bhattacharjee
发明人： Seungbae Lee , Kushal Bhattacharjee
IPC分类号： H03H9/00 , H03H9/54
CPC分类号： H03H9/2452 , H03H9/462 , H03H9/485 , H03H2009/02496
摘要： The present invention relates to a multi-mode micro-electromechanicalsystems (MEMS) resonator system that may provide low motional resistance and a high quality factor by using a resonating structure that includes multiple parallel-coupled longitudinally resonating bodies, each of which has multiple resonating segments adjacent to one another along an axis. The multi-mode MEMS resonator system may provide high acoustic velocity by using the micro-structure of MEMS technology. The multi-mode MEMS resonator system may include electrostatic transducers, piezoelectric transducers, or both. The present invention includes multiple embodiments that may include different configurations of the resonating structure.
摘要翻译：本发明涉及通过使用包括多个并联耦合纵向谐振体的谐振结构来提供低运动电阻和高品质因数的多模式微机电系统（MEMS）谐振器系统，其中每个具有多个谐振段沿轴线彼此相邻。多模MEMS谐振器系统可以通过使用MEMS技术的微结构来提供高声速。多模MEMS谐振器系统可以包括静电换能器，压电换能器或两者。本发明包括可以包括谐振结构的不同配置的多个实施例。

9. 发明授权

US08490260B1 Method of manufacturing SAW device substrates 有权
标题翻译：制造SAW器件衬底的方法
公开(公告)号：US08490260B1
公开(公告)日：2013-07-23
申请号：US11969956
申请日：2008-01-07
申请人： Sergei Zhgoon , Kushal Bhattacharjee
发明人： Sergei Zhgoon , Kushal Bhattacharjee
IPC分类号： H04R17/10 , H01L21/20
CPC分类号： H03H9/02614 , H03H9/02574 , Y10T29/42 , Y10T29/49005
摘要： A method of manufacturing composite structures, or composite substrates, for a Surface Acoustic Wave (SAW) device are provided. In one embodiment of the present disclosure, a piezoelectric substrate is provided. A supporting substrate is formed over a first surface of the piezoelectric substrate. The first surface of the piezoelectric substrate may be unpolished. A second surface of the piezoelectric substrate is then processed to a desired thickness and polished. SAW device components such as, for example, interdigitated transducers (IDTs) and reflectors are then formed on the polished surface of the piezoelectric substrate. The supporting substrate may be formed using any desired type of deposition or growth process.
摘要翻译：提供了一种制造用于表面声波（SAW）器件的复合结构或复合衬底的方法。在本公开的一个实施例中，提供压电基板。在压电基板的第一表面上形成支撑基板。压电基板的第一表面可以是未抛光的。然后将压电基板的第二表面加工成所需的厚度并抛光。然后在压电基板的抛光表面上形成SAW器件部件，例如交叉换能器（IDT）和反射器。可以使用任何所需类型的沉积或生长工艺来形成支撑衬底。

10. 发明授权

US07619347B1 Layer acoustic wave device and method of making the same 有权
标题翻译：层声波装置及其制造方法
公开(公告)号：US07619347B1
公开(公告)日：2009-11-17
申请号：US11418909
申请日：2006-05-05
申请人： Kushal Bhattacharjee
发明人： Kushal Bhattacharjee
IPC分类号： H01L41/083
CPC分类号： H03H9/6406 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/19105 , H03H9/0038 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49128 , Y10T29/49155 , H01L2924/00012 , H01L2924/00014
摘要： The present invention provides a layer acoustic wave device that is formed without requiring a bonding process to attach a secondary substrate. In particular, the layer acoustic wave device is formed from a substrate, an interdigital transducer created on the substrate, a dielectric layer formed over the interdigital transducer and substrate, and at least one isolation layer formed over the dielectric layer. The at least one isolation layer has sufficient properties to minimize particle displacement on a top surface of the at least one isolation layer. The at least one isolation layer has a greater acoustic impedance than that of the dielectric layer.
摘要翻译：本发明提供一种层状弹性波装置，其不需要接合工艺来形成第二基板。特别地，层状弹性波器件由基板，在基板上产生的叉指换能器，形成在叉指换能器和基板上的电介质层以及形成在电介质层上的至少一个隔离层形成。所述至少一个隔离层具有足够的特性，以使至少一个隔离层的顶表面上的颗粒位移最小化。所述至少一个隔离层具有比所述电介质层更大的声阻抗。

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